1999 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors

June 10-12, 1999
Karuizawa Prince Hotel
Karuizawa, Nagano, Japan


Thursday, June 10   8:30 am

Opening Remarks

N. Teranishi
J. Nakamura

Session 1. CCD Image Sensors

Chairman N. Teranishi (NEC)   8:45 am

A 2/3-in. 2,200k-pixel FIT-CCD for HDTV 1080i
Suzuki, T. Yamaguchi, T. Torikai, N. Iwawaki, M. Yamanaka,
Hirata, H. Tanaka, K. Yokozawa, M. Tamura and T. Imanishi
CCD Division, Matsushita Electronics Corporation, Japan

BCD-A New High Performance Nondestructive Charge Detection Concept for CCD Image Sensors
Hynecek and H. Shibuya*
ISETEX Inc, U.S.A. *Texas Instruments Japan Limited, Japan

Influence of Sensor Settings and Doping Profile on Dark Current in

O. Folkerts, A. Heringa, H. Peek, D. Verbugt and L. Korthout
Philips Semiconductors Image Sensors, The Netherlands

Dynamic Range Improvement by Narrow-Channel Effect Suppression and Smear Reduction Technologies in Small Pixel IT-CCD Image
Tanabe, Y. Kudoh, Y. Kawakami, K. Masubuchi, S . Kawai, T. Yamada,
M. Morimoto*, K. Arai, K. Hatano**, M. Furumiya**, Y. Nakashiba**,N.
Mutoh, K. Orihara and N. Teranishi
Silicon Systems Research Labs., NEC, Japan *System Micro Division,
NEC, Japan **ULSI Device Development Labs. NEC, Japan


Session 2: CMOS Image Sensors

Chairman J. Nakamura (Olympus)   10:55 am

256 x 256 Pixel CMOS Imager with Linear Readout and 120dB Dynamic
Schanz, C. Nitta, T. Eckart, B. J. Hosticka and R. Wertheimer*
Fraunhofer Institute ofMicroelectronic Circuits and Systems, Germany
*Center of Research and Engineering, BMW; Germany

692 x 504 CMOS APS Imager with Extended Dynamic Range and on-chip 12~bit ADC
WITHDRAWN G.W. Hughes, N. McCaffrey, D. Sauer, F. Hsueh, P. Levine, and F.
S. Pantuso Sarnoff Corporation. USA

A 1/3″ VGA CMOS Imaging System on a Chip
Agwani, R. Cichomski, M. Gorder, A. Niederkorn, M. Skow and K.
Motorola Inc., U.S.A.

Low Dark Current Pinned Photo-Diode for CMOS Image Sensor
Inoue, H. Ihara, H. Yamashita, T. Yamaguchi, H. Nozaki and R.
Toshiba Corp. Japan

Session 3. CMOS Image Sensors

Chairman B. Dierickx (IMEC)

A Smart CMOS Imager with On-Chip High-Speed Windowed Centroiding
Sun, G. Yang, C. Wrigley, O. Y. Pecht* and B. Pain
Center for Space Microelectronics Technology, JPL, U.S.A. *Electrical
and Computer Eng. Dept., Ben-Gurion University, Israel

Time-Domain Correlation Image Sensor: First CMOS Realization of Demodulator
Pixels Array
Ando and A. Kimachi
Dept. Mathematical Eng. and Information Physics, Univ. of Tokyo, Japan

Spatially Variant Flexible Sampling Control Integrated on a Sensor Focal

Ohtsuka, T. Hamamoto and K. Aizawa
Dept. Electrical Engineering, University of Tokyo, Japan

Image Transmission with a Retina-Like CMOS Camera
Sandini, P. Questa*, A. Mannucci*, F. Ciciani*, D. Scheffer**, and
B. Dierickx**
LIRA-Lab, DIST, University of Genova, Italy *Unitek Consortium, Italy
**IMEC-Leuven, Belgium


Session 4. Poster Session

J. Hynecek (ISETEX)
Orihara (NEC)

A Digital Pixel Image Sensor with 1-bitADC and 8-bit Pulse Counter in Each Pixel
Andoh, M. Nakayama, H. Shimamoto and Y. Fujita
Science & Technical Research Laboratories, NHK, Japan *Engineering
Administration Department, NHK, Japan

A 128 x 128 Photo-Gate CMOSAPS with 10-bit Successive Approximation ADC WITHDRAWN
Solhusvik. J.Bjornsen, S.Eikedal
Electronic Systems Dept., ABB, Norway

CMOS APS with Autoscaling and Customized Wide Dynamic
Y. Pecht and A. Belenky
Electrical and Computer Eng. Dept., Ben-Gurion Univ. of the Negev,

A CMOS Image Sensor Integration Gamma Correction and Gain Control
Sasaki, S. Kawahito* and Y. Tadokoro*
Sendai National College of Technology, Japan *Toyohashi University of
Technology, Japan

An a-Se HARP Layer for a Solid-State Image Sensor
D. Park, Y. Takiguchi*, M. Kosugi*, M. Kubota*, Y. Ohkawa*, K.
Miyakawa*, S. Suzuki*, K. Shidara*, K. Tanioka*, A. Kobayashi**, and T.
Dongyang University, Korea *Science and Technical Research
Laboratories, NHK, Japan **Hamamatsu Photonics K.K., Japan

Buried Double Junction Pixel Using Green and Magenta
M. Findlater, P. B. Denyer*, R. K. Henderson*, J. E. D. Hurwitz*,
J. M. Raynor* and D. Renshaw
Dept. of Electronics and Electrical Engineering, The Univ. of
Edinburgh , UK *VLSI Vision Ltd., UK

A Vertically Integrated High Resolution Active Pixel Image Sensor for Deep
Submicron CMOS Processes
Benthien*, M. Wagner*, M. Verhoeven*, M. Bohm* **, B.Schneider**,
B. van. Uffel*** and F. Librecht***
*Silicon Vision GmbH, Germany **IHE, Universitat-GH Siegen, Germany
***AGFAGevaert N.V, Belgium

On-Chip Offset Calibrated Logarithmic Response Image
Kavadias, B. Dierickx and D. Scheffer
IMEC, Belgium

128 x 64 Pixels Adaptive-Integration-Time Image Sensor
Hamamoto, Y. Ino and K. Aizawa*
Dept. of Elec. Eng., Science University of Tokyo, Japan *Dept. of
Elec. Eng., University of Tokyo, Japan

Characterization of CMOS Photodiodes for Image
C. Wang, I. L. Fujimori and C. G. Sodini
Department of Elec. Eng. and Computer Science, MIT, U.S.A.

Design and Simulation of a CMOS Sensor Array
J. Wang and H. L. Kwok
Dept. of Electrical and Computer Engineering, University of Victoria,

A Passive Photodiode Pixel with Memory
Melander, M. Gokstorp* and R. Forchheimer
IVP, Integrated Vision Products AB, Sweden *Photobit Corporation,

Focal Plane Processing for a Fast Detection of 2D Motion
Li and K. Aizawa
Dept. of Electrical Engineering, University of Tokyo, Japan

Fast Square-area Detection Algorithm Using Automata for VLSI
Akita, K. Maeda, A. Kitagawa and M. Suzuki
Dept. of Electrical and Comp. Eng., Kanazawa University, Japan

Non-Linear AD Conversion, Tolerant for Pixel Offset
IMEC, Belgium  

A CCD-CMOS Image Sensor for Ultra-High Speed Image
Etoh, H. Mutoh* and K. Takehara
Kinki University, Japan *Link Research Corporation, Japan

The Ideal Response Curve of Colored Photodiodes
Meynants and B. Dierickx
IMEC, Belgium  

3-D Wave Optical Simulation of Inner-Layer Lens Structure
Link Research Corporation, Japan

Novel pH Imaging Sensors Based on CCD Technology
Sawada, S. Mimura*, K. Tomita*, T. Nakanishi*, H. Tanabe*, M.
Ishida, and T. Ando**
Dept. of Electrical and Electronic Eng., Toyohashi Univ. of
Technology, Japan *HORIBA, Ltd., Japan **Research Institute of Electronics,

High Performance Schottky Photodiode Based on Polycrystalline ITO Deposited at Room Temperature
Ma and A. Nathan
Dept. of Electrical and Computer Engineering, Univ. of Waterloo,

A Study for Image Pickup over Nyquist Rate Using Digital Signal
Kimura, N. Takatsuka, T. Arano and H. Shiraki
Dept. of Systems Engineering, Faculty of Engineering, Ibaraki Univ.,

CCD and APS – Both Together to the Comet P/Wirtanen
Behnke, H. Michaelis, M. Tschentscher and S. Mottola
Institute of Planetary Exploration, German Aerospace Center, Germany

Correlation Between Leakage Current and Overlap Capacitance in a-Si:HTFTs
Nathan, D. Pereira, M. Austin
Electrical and Computer Engineering, University of Waterloo, Canada

Measurement of Substrate Impurity Fluctuation in CCD Image
Shiraki, T. Kimura, T. Arano and N. Takatsuka
System Dept., Faculty of Engineering, Ibaraki University, Japan

A Family of High Performance TDI Image Sensors
Weale, C. Flood, M. Ledgerwood, J. G. Mihaychuk, S. Kamasz, H.
Siefken, D. Deering and G. Ingram
DALSA Inc., Canada 

Technology and Performance of VGA-Format Progressive IT-CCD Imagers with Double Transfer Gate Four-Phase Pixel Structure
J. Yu and K. K. Kwon
CCD R&D Lab., System IC Group, LG Semicon Ltd., Korea


Session 5: CMOS Image Sensors (III)

Chairman P. Wong (IBM)

Analysis and Enhancement of Low-Light-Level Performance of Photodiode type CMOS Active Pixel Imagers Operated with Sub-Threshold
Pain, G. Yang, M. Ortiz, C. Wrigley, B. Hancock and T.
Jet Propulsion Laboratory, California Institute ofTechnology, U.S.A.

An Improved Digital CMOS Imager
B. Kwon*, K. N. Park*, D. Y. Lee*, K. J. Lee*, S. C. Jun*, C. K.
Kim*, J. W. Eom*, A. S. Choi*, Y. B. Lee* and W. Yang* **
*Image Sensor Dev. System I C R&D, Hyundai Electronics Inc, Korea
**Harvard University, U.S.A.

A Low-Light to Sunlight, 60 Frames/s, 80k Pixel CMOS APS Camera-on-a Chip With 8b Digital Output
L. Barna, L. P. Ang, B. Mansoorian and E. R. Fossum
Photobit Corp., U.S.A.

A Linear-Response, High-Dynamic Range CMOS Imager Suitable for
Spectroscopic Applications
Qian and W. Yang
Division of Engineering and Applied Sciences, Harvard University,


Session 6. Non-Visible Image Sensors

Chairman D. McGrath (MIT) 

Current Skimming-Based CMOS Readout Architectures for Quantum Well Infrared Photodetectors
Friedman, A. Arbel and R. Ginosar
VLSI Systems Research Center, Israel Institute ofTechnology, Israel

A Stacked CMOS APS for Charge Particle Detection and its Noise
Takayanagi, J. Nakamura, H. Yurimoto*, T. Kunihiro*, K. Nagashima*,
and K. Kosaka**
Olympus Optical Co., Ltd., Japan *Tokyo Institute of Technology, Japan
**Tokyo Technology, Inc., Japan

Charge Loss in the Channel Stop Regions of the X-ray CCD
Prigozhin, M. Pivovaroff, S.Kissel, M. Bautz and G. Ricker
Center for Space Research, MIT, U.S.A.

A Partially Overlapped X-ray Imaging Pixel with Low Leakage and High
Park and A. Nathan
Electrical and Computer Engineering Dept., University of Waterloo,

A Model for Object Detectability Close to Defective Columns in X-Ray
Dyck and M. Sayag;
Lockheed Martin Fairchild Systems, U S.A.


Session 7. Large Format Image Sensors

Chairman R.
Bredthauer (Semiconductor Tech. Associates)
Kuroda (MEC)

Performance Characteristics of a 9216 x 9216 Pixel CCD
Wen, R. Bredthauer, P . Bates, P. Vu and R. Potter
Lockheed Martin Fairchild Systems, U.S.A.

An 8M-CCD for an Ultra High Definition TV Camera
Smith, M. Farrier, K. Mitani*, Q. Tang and G. Ingram
DALSA Inc., Canada *NHK, Japan

Large Format CCD Image Sensors Fabricated on High Resistivity
E.Holland, D. E. Groom, M. E. Levi, N. P. Palaio, S. Perlmutter, R.
J. Stover* and M. Wei*
Lawrence Berkeley National Laboratory, University of California,
U.S.A. *Lick Observatory, University of California Observatories, U.S.A.

A Page Width CMOS Image Sensor Array J.Tandon Xerox
Corporation, U.S.A


Session 8. CMOS Image Sensors (IV) and Image Sensor Characterization

Chairman O. Yadid-Pecht (Ben-Gurion Univ. of Negav)
Tanioka (NHK)

First Multispectral Diode Color Imager with Three Color Recognition and
Color Memory in Each Pixel
Sommer*, P. Rieve*, M. Verhoeven*, M. Bohm* **, B. Schneider**, B.
van. Uffel*** and F. Librecht***
*Silicon Vision GmbH, Germany **IHE, Universitat-GH Siegen, Germany
***Agfa-Gevaert N.V., Belgium

Self-Calibrating Logarithmic CMOS Image Sensor with Single Chip Camera
Loose, K. Meier and J. Schemmel
IHEP, Heidelberg University, Germany   4:45

A Novel CMOS-APS Configuration with an Extremely Low Fixed Pattern
I. Watanabe
Corporate Research Labs., Fuji Xerox Co., Ltd., Japan

CCD Requirements for Digital Photography
L. Baer
Hewlett-Packard Laboratories, U.S.A.   5:35

Test Methodologies for Digital CMOS Camera-on-a-Chip Image
Waligorski, M. B. Kaplinsky, V Berezin and E. R. Fossum
Photobit Corporation, U.S.A.


Session 9. Discussion Session

Chairman E. Fossum (Photobit)

Saturday, June 12


Session 10. Walter Kosonocky Award

Chairman Albert Theuwissen

Walter Kosonocky
Award Presentation


Session 11. CMOS Image Sensors (V)

Chairman P. Denyer (VVL) 

Area Auto Focus CMOS Sensor
Takahashi, T. Ezaki, M. Shinohara, S. Furudate, H. Nakamura, T.
Ichise, and S. Sugawa
Device Development Center, Canon Inc., Japan

On Chip Focal Plane Filtering for CMOS Imagers

Huppertz, T. Kneip, M. Schwarz and B. J. Hosticka
Fraunhofer Institute ofMicroelectronic Circuits and Systems, Germany

CMOS Image Sensor Overlaid with a HARP Photoconversion
Watabe, H. Ohtake, K. Yamano, M. Yamauchi, T. Tajima, Y. Takiguchi,
Y. Ishiguro, T. Hayashida M. Kosugi, H. Kokubun, T. Watanabe and M.
NHK Science and Technical Research Laboratories, Japan

LARS II -A High Dynamic Range Image Sensor with a-Si:H Photo Conversion Layer
Lule*, H. Keller*, M. Wagner* and M. Bohm* **
*Silicon Vision GmbH, Germany **IHE, Universitat-GH Siegen, Germany


Session 12. CCD Image Sensors

(II) Chairman K. Yonemoto (Sony)
Mutoh (NEC)

Performance of FT-CCD Image Sensor with Single Layer Poly-Silicon

Y Okada, Y Ohtsuru, S. Izawa, N. Taino and M.
Hamada CCD Development Dept., MOS-LSI Division, SANYO Electric Corp., Japan

Evaluation of Subsampling in a 2/3″ 2-M Pixel FT-CCD
T. Bosiers, A. C. Kleimann, M. Horemans and L. L. Cam
Philips Semiconductors Image Sensors, The Netherlands

Technology to Eliminate Yield-Limiting Elements in CCD
Peek, D. Verbugt, H. Stoldt and A. D. Veirman
Philips Semiconductors Image Sensors, The Netherlands

1/2″ 2Mpixel Full Frame CCD Sensor for Digital
Pektas, J. Toker and S. Bencuya
Image Sensor Technology Division, Polaroid Corporation, U.S.A.

A 1/4-inch 630k-pixel IT-CCD Image Sensor with High-Speed Capture
Kimura, H. Yoshida, I. Hirota, A. Yamamoto, K. Ezoe, Y
Takamura, H. Mori* and Y Fujita*
Semiconductor Company, SONY Corporation, Japan *SONY Kokubu
Corporation, Japan