2011 INTERNATIONAL IMAGE SENSOR WORKSHOP

June 8-11, 2011 Hokkaido, Japan


Wednesday, June 8th 2011

Session 1: Small Pixel Sensors I

Session chair: Albert Theuwissen (Harvest Imaging)

08:45-09:05

R1

Pixel Continues to Shrink….Small Pixels for Novel CMOS Image Sensors

G. Agranov, S. Smith, R. Mauritzson, S, Chieh, U. Boettiger, X. Li, X. Fan, A. Dokoutchaev, B. Gravelle, H. Lee. W. Qian, R. Johnson. Aptina LLC, USA 

09:05-09:25

R2

A Review of the 1.4 mm Pixel Generation 

R.Fontaine. Chipworks, Canada

09:25-09:45

R3

SNR Performance Comparison of 1.4mm Pixel : FSI, Light-guide, and BSI 

Kyungho Lee, JungChak Ahn, Bumsuk Kim, Taesub Jung, Sangjoo Lee, Moosup Lim, Chang-Rok Moon, Sangil Jung, Junetaeg Lee, Hongki Kim, Duckhyung Lee, Hiroshige Goto, Chi-Young Choi, and Yun-Tae Lee. Samsung Electronics Co., Ltd., Korea

09:45-10:05

R5

Pixel-to-Pixel Isolation by Deep Trench Technology: Application to CMOS Image Sensor

A. Tournier, F. Leverd, L. Favennec, C. Perrot, L. Pinzelli, M. Gatefait, N.Cherault, D. JeanJean, J.-P. Carrere, F. Hirigoyen, L. Grant, F. Roy. STMicroelectronics, France

Session 2: Small Pixel Sensors II

Session chair: Jung Chak Ahn (Samsung)

10:25-10:45

R6

Quantum Efficiency Simulation Using Transport Equations 

William Gazeley and Dan McGrath. Aptina Imaging, USA

10:45-11:05

R7

Crosstalk Metrics and the Characterization of 1.1μ-pixel CIS

C. Chao, H.Y. Tu, K.Y. Chou, P.S. Chou, F.L. Hsueh, W.H. Wei, R.J. Lin, and B.C. Hseih. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC

11:05-11:25

R8

Back Illuminated Vertically Pinned Photodiode with in Depth Charge Storage

J. Michelot1,2, F. Roy1, J. Prima1, C. Augier1, F. Barbier1, S. Ricq1, P. Boulenc1,       Z. Essa1, L. Pinzelli1, H. Leininger1, M. Gatefait1, J.-E. Broquin21STMicroelectronics, France; 2IMEP-LAHC, France

11:25-11:45

R9

The Mass Production of Second Generation 65 nm BSI CMOS Image Sensors

H. Rhodes, S. Manabe, V.C.Venezia, K. C. Ku, Z. Lin,  P. Fu, D. Tai, A. Shah, R. Liu, R. Yang, P. Matagne, S. Hu.  OmniVision Technologies, Inc.,USA

Session 3: Invited Presentation and Process Technology

Session chair: Shou-Gwo Wuu (TSMC)

13:15-13:45

I1

Invited Presentation-I

Technology of Color Filter Materials for Image Sensor

Hiroshi Taguchi, Masashi Enokido. FUJIFILM Electronic Materials Co., Ltd.,Japan

13:45-14:05

R11

Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface

Rihito Kuroda, Taiki Nakazawa, Katsuhiko Hanzawa and Shigetoshi Sugawa. Tohoku University, Japan

14:05-14:20

R12

High Performance and High Yield Junction Formation with Full Device Exposure Laser Thermal Annealing

K. Huet1, C. Boniface1, J. Venturini1, Z. Ait Fqir Ali-Guerry2,3, R. Beneyton2, M.Marty², D. Dutartre2, F. Roy2. 1EXCICO, France; 2STMicroelectronics, France;3Institut des Nanotechnologies; France

14:20-14:35

R13

A Highly Manufacturable Backside Illumination Technology for CMOS Image Sensor

Yunki Lee, Chang-rok Moon, Doowon Kwon, Jinho Kim, Byoung jun Park, Yuyeon Yu, Gilsang Yoo, Sanghoon Kim, Seunghoon Shin, Taehun Lee and Duckhyung Lee. Samsung Electronics Co. LTD., Korea

Session 4: Poster Presentations

Session chair: Jun Ohta (Nara Institute of Science and Technology)

Lindsay Grant (ST Microelectronics)

P1 Performance Improvements of Polarization Analyzing CMOS Image Sensor Using Multiple Pixel Array Architecture and 65nm Standard CMOS Process

Takashi TOKUDA, Hitoshi MATSUOKA, Sanshiro SHISHIDO, Toshihiko NODA, Kiyotaka SASAGAWA and Jun OHTA. Nara Institute of Science and Technology, Japan

P2 High Resolution CCD Polarization Imaging Sensor

Viktor Gruev and Tim York. Washington University, USA

P4 A 2/3-type 2.3-Mega Pixel IT-CCD for HD 1080p60

Takuya Asano, Yoshinori Horikawa, Kazuaki Hirata, Ryoichi Nagayoshi,                      Akira Tsukamoto. Panasonic Corporation, Japan

P5 A High Speed CMOS Dual Line Scan Imager for Industrial Applications

P. Donegan, L. Korthout, M. Moser, V. Bommu, Y. Lin, A. Kumar, F. Feng,                   D. Marchesan, D.Verbugt, P. Albertini, W.de Haan, S. Xie, D. Atos, W. Maes,                                    J. de eulmeester, M. Sonder, E. Fox. Teledyne DALSA Corporation, Canada

P6 Ageing Effects on Image Sensors: Neutron Irradiation Studies on Wafer and Packaged Devices

Gayathri G. Nampoothiri1, Albert J. P. Theuwissen1, 2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging, Belgium

P7 Analog Multiplex Bus Readout Method to Reduce Ghosting Image Artifact in CMOS Image Sensors

Rahul Sankhe, Raja Reddy P. ON Semiconductor Technology India Pvt. Ltd., India

P8 Study of Image Artifacts Caused by the Single-Ended CTA Column Comparator Used in CMOS Imagers

M.D. Purcell, G.G. Storm, J. K Moore, M. Wigley, D. Tolmie. STMicroelectronics, U

P9 Column-Parallel Circuits with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors

Yue Chen1, Yang Xu1, Adri J. Mierop2 and Albert J.P. Theuwissen1,3. 1Delft University of Technology, the Netherlands; 2Teledyne DALSA B.V., the Netherlands; 3Harvest Imaging, Belgium

P10 Post-ADC Digital Filtering in the CIS with the Column Single Slope ADC

Toshinori Otaka, Takumi Hiraga and Takayuki Hamamoto. Tokyo University of Science, Japan

P12 Prototype Line‐Scan Device with 12‐bit Charge Domain Column‐Parallel
Successive Approximation ADC
Laurens Korthout, Daniel Verbugt, Paul Donegan, Adri Mierop. Teledyne DALSA Professional Imaging, The Netherland
P13 Analysis of Front‐end Multiplexing for Column Parallel Image Sensors

Daniel Van Blerkom, Steve Huang, Loc Truong and Barmak Mansoorian. Forza Silicon Corporation, USA

P15 Accurate Capacitance and RC Extraction Software Tool for Pixel, Sensor, and Precision Analog Designs

M. Ershov1, M.Cadjan1, Y.Feinberg1, X.Li2, G.C.Wan2, and G.Agranov2. 1Silicon Frontline Technology, USA; 2Aptina Imaging, USA

P16 Single-Photon Avalanche Diodes in sub-100nm Standard CMOS Technologies

Mohammad Azim Karami, Hyung-June Yoon, and Edoardo Charbon. Delft University of Technology, Netherlands

P17 An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS

Eric A. G. Webster1, Justin A. Richardson2, Lindsay A. Grant3, David Renshaw1, Robert K. Henderson1. 1University of Edinburgh, UK; 2University of Edinburgh and Dialog Semiconductor; 3ST Microelectronics, UK

P19 Enhanced X-RAY CMOS Sensor Panel for Radio and Fluoro Application Using a Low Noise Charge Amplifier Pixel with a Partially Pinned PD

Assaf Lahav1, Tomer Leitner, Raz Reshef & Amos Fenigstein. 1Tower Semiconductor LTD., Israel

P20 L²CMOS Image Sensor for Low Light Vision

Pierre Fereyre, Frédéric Devrière, Stéphane Gesset, Marie Guillon, Thierry Ligozat, Frédéric Mayer, Gareth Powell, Vincent Prevost, Frédéric Ramus, Olivier Seignol. e2v semiconductors, France

P21 Color Channel Weights in a Noise Evaluation

Samu Koskinen, Eero Tuulos, Juha Alakarhu. Nokia, Finland

P22 Design and Preliminary Evaluation of CMOS Image Sensor with Pseudorandom Pixel Placement

Junichi Akita, Yui Maeda, Akio Kitagawa. Kanazawa University, Japan

P24 Photo-Sensitive Area Modulation Pixel for 3D Real-Time CCD Imager

Y. Hashimoto, F. Kurihara, K. Murakami, K. Imai, K. Taniguchi1. Matsushita Electric Works, Ltd.,Japan; 1Osaka University, Japan

P25 CMOS Image Sensor for 3-D Range Map Acquisition Using Time Encoded 2-D Structured Pattern

Hiroki Yabe, Makoto Ikeda. University of Tokyo, Japan

P27 An Integration Time Prediction Based Algorithm for Wide Dynamic Range 3D-Stacked Image Sensors

Adi Xhakoni1, David San Segundo Bello2, Koen De Munck2,                                         Padmakumar Ramachandra Rao2, Piet De Moor2 and Georges Gielen1. 1K.U.Leuven, Belgium; 2IMEC, Belgium

P28 A QCIF 145dB Imager For Focal Plane Processor Chips Using a Tone Mapping Technique in Standard 0.35μm CMOS Technology

S. Vargas-Sierra, G. Liñán-Cembrano, A. Rodríguez-Vázquez. CSIC and Universidad de Sevilla, Spain

P29 Temperature Compensation Scheme for Logarithmic CMOS Image Sensor

Hakim Zimouche, Hawraa Amhaz and Gilles Sicard. CNRS, France

P30 Smart Readout Technique based on Temporal Redundancies Suppression Designed for Logarithmic CMOS Image Sensor 

Hawraa AMHAZ, Hakim ZIMOUCHE and Gilles SICARD. CNRS, France

P31 Backside Illuminated Hybrid FPA Achieving Low Cross-Talk Combined with High QE

Koen De Munck, Padmakumar Rao Ramachandra, Kiki Minoglou, Joeri De Vos,           Deniz Sabuncuoglu and Piet De Moor. IMEC, Belgium

P32 Backside Illuminated CMOS Snapshot Shutter Imager on 50μm Thick High Resistivity Silicon

Stefan Lauxtermann, Dirk Leipold. Sensor Creations., Inc., USA

P33 CMOS Image Sensor with an Overlaid Organic Photoelectric Conversion Layer: Optical Advantages of Capturing Slanting Rays of Light

Mikio Ihama, Hiroshi Inomata, Hideki Asano, Shinji Imai, Tetsurou Mitsui,                  Yuuki Imada, Masayuki Hayashi, Takashi Gotou, Hideyuki Suzuki, Daigo Sawaki, Mitsumasa Hamano, Toshihiro Nakatani, Yasuyoshi Mishima. FUJIFILM Corporation, Japan

P34 The Gigavision Camera  – A 2Mpixel Image Sensor with 0.56μm2 1-T Digital Pixels

HyungJune Yoon and Edoardo Charbon. Delft University of Technology, The Netherlands

P35 Low Noise High Dynamic Range 2.3Mpixel CMOS Image Sensor
Capable of 100Hz Frame Rate at Full HD Resolution
Paul Vu, Boyd Fowler, Steve Mims, Chiao Liu, Janusz Balicki, Hung Do, Wang Li, Jeff Appelbaum. Fairchild Imaging, Inc., USA
 

Thursday June 9th, 2011

Session 05: Time-of-Flight and Time-Resolved Imaging

Session chair: Pierre Magnan (ISAE)

08:30-08:45

R15

Experimental Comparison of Four Different CMOS Pixel Architectures Used in Indirect Time-of-Flight Distance Measurement Sensors

D. Durini, A. Spickermann, J. Fink, W. Brockherde, A. Grabmaier, B. J. Hosticka. Fraunhofer Institute for Microelectronic Circuits and Systems, Germany

08:45-09:05

R16

Time Of Flight Image Sensors in 0.18μm CMOS Technology: a Comparative Overview of Different Approaches

David Stoppa1, Lucio Pancheri1, Nicola Massari1, Mattia Malfatti1,                     Matteo Perenzoni1, Gianmaria Pedretti1, Gian-Franco Dalla Betta2. 1Fondazione Bruno Kessler, Italy; 2DISI, University of Trento, Italy

 09:05-09:20

R17

Dark Current Suppression during High Speed Photogate Modulation for 3D ToF Imaging Pixel

Tae-Yon Lee1, YongJei Lee1, Dong-Ki Min1, Joonho Lee1, Young-Gu Jin1, Yoondong Park1, and Chilhee Chung1, Ilia Ovsiannikov2 and Eric R. Fossum1,2.1Samsung Electronics, South Korea; 2Samsung Semiconductor Inc., USA

09:20-09:35

R18

Hybrid Back-Side Illuminated Distance Measuring Sensor Array with Ring Gate Structure

Mitsuhito Mase, Takashi Suzuki, Shigeyuki Nakamura, Michito Hirayanagi,                Naoto Sakurai, Terumasa Nagano, Atsushi Ishida, Seiichiro Mizuno                              and Mitsutaka Takemura. Hamamatsu Photonics K.K.,Japan

09:35-9:50

R20

High‐Speed General Purpose Demodulation Pixels Based on Buried Photodiodes

LysandreEdouard Bonjour 1,2, Thomas Baechler1, Maher Kayal 2. 1CSEM SA, Switzerland; 2EPFL STI IEL GRKA, Switzerland

 9:50-10:10

R21

A CMOS Image Sensor with Draining Only Modulation Pixels for Sub-Nanosecond Time-Resolved Imaging

Shoji Kawahito, Zhuo Li and Keita Yasutomi. Shizuoka University, Japan

Session 06: Invited Presentation and Various Imager Design Topics

Session chair: Johannes Solhusvik (Aptina Norway)

10:30-11:00

I2

Invited Presentation-II

New Application Areas Made Possible by High Speed Vision

Masatoshi Ishikawa. University of Tokyo, Japan

11:00-11:15

R22

A Multi-Functional Imager for TOF and High Performance Video Applications Using a Global Shuttered 5mm Cmos Pixel.

Peter Centen1, Juul v.d Heijkant1, Jeroen Rotte1, Klaas Jan Damstra1,
Assaf Lahav2 , Adi Birman2,Steffen Lehr3, Sabine Roth3, Ruud van Ree1. 1 Grass Valley, Netherlands; 2 TowerJazz, Israel; 3 Viimagic, Germany

11:15-11:30

R23

Backside Thinned, 2.5 e-RMS, BSI, 700fps, 1760×1760 Pixels Wave-Front Imager with 88 Parallel LVDS Output Channels

Bart Dierickx1, Benoit Dupont1, Arnaud Defernez1, Martin Fryer2, Paul Jorden2, Andrew Walker2, Andrew Pike2, Paul Jerram2, Jerome Pratlong2. 1 Caeleste, Belgium; 2 e2v, UK

11:30-11:50

R24

CCD and CMOS Combined, Low Noise and Low Power Dissipation Linear Image Sensor with Variable Charge Mixing Mode

Makoto Monoi1, Masayuki Ohki3, Yoshihiro Hayakawa3, Syu Sasaki2 .1 Toshiba Corporation, Japan; 2 Iwate TOSHIBA electronics, Japan; 3 Toshiba micro-electronics, Japan

11:50-12:05

R25

An Implantable CMOS Image Sensor with Light Guide Array Structure and Fluorescent Filter

Kiyotaka Sasagawa1,2, Keisuke Ando1, Takuma Kobayashi1,2, Toshihiko Noda1,2, Takashi Tokuda1,2, Yumiko Hatanaka1,2, Hideki Tamura1,2, Sadao Shiosaka1,2,      Jun Ohta1,2. 1Nara Institute of Science and Technology, Japan;2Japan Science and Technology Agency, Japan

12:05-12:20

R26

An Autonomous micro-Digital Sun Sensor Implemented with a CMOS Image Sensor Achieving 0.004º Resolution @ 21mW

Ning Xie1, Albert J.P. Theuwissen1, 2, Bernhard Büttgen1, 3. 1Delft University of Technology, Netherlands; 2Harvest Imaging, Bree, Belgium; 3 MESA Imaging, Switzerland

Session 07: Noise

Session chair: Boyd Fowler (Farichild Imaging)

13:50-14:10

R27

New Source of Random Telegraph Signal in CMOS Image Sensors

V. Goiffon1, P. Magnan1, P. Martin-Gonthier1, C. Virmontois1, and M. Gaillardin2.1ISAE, France; 2CEA DAM-DIF, France

14:10-14:25

R28

Analysis of Blinking Pixels in CCD Imagers with and without Surface Pinning

Inge Peters, Erik Bogaart*, Erik-Jan Manoury, Adri Mierop, Jan Bosiers. TELEDYNE DALSA Professional Imaging, the Netherlands; *ASML, the Netherlands

14:25-14:45

R29

Dark Fixed Pattern Noise Generation by Negative-Bias-Temperature (NBT) Stress on CMOS Imager Pixel Transfer Gate

Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami. Toshiba Corporation, Japan

14:45-15:00

R30

5MPix, 30fps CMOS Image Sensor with Very Low Temporal Line Noise

G.G. Storm, M.D. Purcell, J. K Moore, M. Wigley, D. Tolmie, L.A Grant. STMicroelectronics, UK

15:00-15:15

R31

4T CMOS Image Sensor Pixel Degradation due to X-ray Radiation

Jiaming Tan1, Bernhard Büttgen1 and Albert J. P. Theuwissen1,2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging, Belgium

Session 08: Stacked Structures, High Dynamic Range Sensors, and CCDs

Session chair: Koichi Mizobuchi (Olympus Medical Systems)

15:35-15:50

R32

Investigation of Two-Layer Photodetectors for YSNR10 Improvement in Submicron Pixels

Eric R. Fossum. Samsung Electronics Semiconductor R&D Center, South Korea and Thayer School of Engineering at Dartmouth, USA

15:50-16:05

R33

A 128 x 96 Pixel Stack-Type Color Image Sensor with B-, G-, R-sensitive Organic Photoconductive Films

Hokuto Seo1*, Satoshi Aihara1, Toshihisa Watabe1, Hiroshi Ohtake1,         Toshikatsu Sakai1, Misao Kubota1, Norifumi Egami1, Takahiro Hiramatsu2, Tokiyoshi Matsuda2, Mamoru Furuta2, and Takashi Hirao2. 1NHK, Japan; 2Kochi University of Technology, Japan

16:05-16:25

R34

Process Integration Aspects of Back Illuminated CMOS Imagers Using Smart StackingTM Technology with Best in Class Direct Bonding

Ruth Shima Edelstein1, Omer Katz1, Becky Lavi1, Ishai Aberman1,                    Sagee Rosenthal1, Michal Shadmi1, Shay Arad1, Nili Golan1,                             Michal Shach Caplan1, Morad Massalha1, Chrystelle Lagahe-Blanchard2,        Laurent Marinier2, Richard Fontanière2, Arnaud Castex2, Marcel Broekaart2, Muriel Martinez2, Nathalie Milhet2, Arnaud Rigny2, Christine Pelissier2.1TowerJazz, Israel; 2SOITEC, France

16:25-16:40

R35

A 768×576 Logarithmic Image Sensor with Photodiode in Solar Cell mode

Yang Ni, YiMing Zhu, Bogdan Arion. New Imaging Technologies SA, France

16:40-16:55

R36

An 89dB Dynamic Range CMOS Image Sensor with Dual Transfer Gate Pixel

Xinyang Wang, Bram Wolfs, Guy Meynants, Jan Bogaerts. CMOSIS N.V, Belgium

16:55-17:15

R38

A 1080 HD Ready 1/2.33-type 12M Pixel CCD Image Sensor with Dual Channel Horizontal CCD

Koichi Yonemura, Toshihumi Habara, Hirokazu Shiraki, Yoshiaki Sato, Akira Tsukamoto.  Panasonic Corporation, Japan

Session 09: Invited Presentation-III

Session chair: Shoji Kawahito (Shizuoka University)

17:30-18:00

I3

The 25th Anniversary of IISW: Reflections on Directions

Eric R. Fossum. Intl. Image Sensor Society, USA

Friday June 10th, 2011

Session 10: Invited Presentation and Avalanche Diode Sensors

Session chair: Shigetoshi Sugawa (Tohoku University)

Satoshi Aihara (NHK)

08:30-09:00

I4

Invited Presentation-IV

Single Photon Imaging

Peter Seitz. CSEM, Switzerland and EPFL STI IMT NE, Switzerland

09:00-09:20

R39

Single Photon Avalanche Diodes in 90nm CMOS Imaging Technology with sub-1Hz Median Dark Count Rate

Eric. A. G. Webster1, Justin Richardson1, Lindsay Grant2, Robert K. Henderson1.1The University of Edinburgh, UK; 2STMicroelectronics, UK

09:20-09:40

R40

A 32×32 SPAD Pixel Array with Nanosecond Gating and Analog Readout

Lucio Pancheri, Nicola Massari, Fausto Borghetti and David Stoppa. Fondazione Bruno Kessler, Italy

09:40-10:00

R41

A Time-Gated 128X128 CMOS Spad Array for On-Chip Fluorescence Detection 

Y. Maruyama and E. Charbon. Delft University of Technology, the Netherlands

10:00-10:15

R42

3D Near-Infrared Imaging Based on a SPAD Image Sensor

Juan Mata Pavia1,2, Cristiano Niclass1, Claudio Favi1, Martin Wolf2,               Edoardo Charbon1,3. 1Ecole Polytechnique Fédérale de Lausanne, Switzerland;2University Hospital Zürich, Switzerland; 3TU Delft, Netherlands

10:15-10:30

R43

185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology

Andreas Eisele1,2, Robert Henderson3, Bernd Schmidtke2, Tobias Funk2,         Lindsay Grant4, Justin Richardson3,5, Wolfgang Freude1,6. 1 IPQ, Karlsruhe Institute of Technology, Germany; 2 Robert Bosch GmbH, Germany; 3 The University of Edinburgh,UK; 4STMicroelectronics Imaging Division, UK; 5 Dialog Semiconductor Ltd., UK; 6 IMT, Karlsruhe Institute of Technology, Germany

10:30-10:45

R44

A Disdrometer Based on Ultra-Fast SPAD Cameras

A. Berthoud1, S. Burri1, C. Bruschini1, A. Berne1, and E. Charbon1,2. 1EPFL, Switzerland; 2Delft University of Technology, the Netherlands

Session 11: Large Area Sensors and Xray Sensors

Session chair: Bart Dierickx (Caeleste)

11:05-11:25

R45

A 300mm Wafer-Size CMOS Image Sensor for Low-Light-Level Imaging

Hidekazu Takahashi, Yuichiro Yamashita, Shin Kikuchi, Masato Fujita,             Satoshi Hirayama, Taikan Kanou, Sakae Hashimoto, Kazuyuki Shigeta,                   Takashi Aoki, Genzo Momma, Shunsuke Inoue. Canon INC., Japan

11:25-11:40

R46

A 23 x 25.9cm2 RGB color CMOS Imager System for Digital Photography

Hein Loijens, Bart Dillen, Wasim Muhammad, Daniel Verbugt, Laurens Korthout, Peter te Vaarwerk, Auke van der Heide, Leon Ponjee, Kim Theuwissen, Piet Jansen, Frank Polderdijk, Jan Bosiers. DALSA Professional Imaging, the Netherlands

11:40-11:55

R47

 A 61mmx63mm, 16Million Pixels, 40 Frames per Second, Radiation-Hard CMOS Image Sensor for Transmission Electron Microscopy

N. Guerrini1, R. Turchetta1, G. Van Hoften2, A. R. Faruqi3, G. McMullan3,             R. Henderson3. 1Rutherford Appleton Laboratory, UK; 2 FEI, the Netherlands; 3MRC Laboratory of Molecular Biology, UK

11:55-12:10

R48

Color X-ray Photon Counting Image Sensing

Bart Dierickx1,2, Benoit Dupont1,3, Arnaud Defernez1, Nayera Ahmed1. 1Caeleste, Belgium; 2V.U.B., Belgium; 3Université Paris XIII, France

12:10-12:25

R50

Single Grain TFTs and Lateral Photodiodes for Large Area X-ray Detection

A. Arslan, R. Ishihara, C.I.M. Beenakker. Delft University of Technology, the Netherlands

Saturday, June 11th 2011

Session 12: Global Shutter Sensors

Session chair: Daniel Van Blerkom (Forza Silicon)

08:30-08:50

R51

Backside Illuminated Global Shutter CMOS Image Sensors

Guy Meynants, Jan Bogaerts, Xinyang Wang, Guido Vanhorebeek. CMOSIS
nv., Belgium

08:50-09:10

R53

A 1.2MP 1/3” Global Shutter CMOS Image Sensor with Pixel-Wise Automatic Gain Selection

Johannes Solhusvik1, Sergey Velichko2, Trygve Willassen1, Sohrab Yaghmai1, Jenny Olsson1, Anders Rosnes1, Tore Martinussen1, Per Olaf Pahr1, Siri Eikedal1, Steve Shaw3, Ranjit Bhamra3, Dan Pates2, Scott Smith2, Lingtao Jiang2, David Wing2 ,       Jenny Bai2, Satyadev Nagaraja2, Ajaya Chilumula2. 1Aptina, Norway;2Aptina, USA; 3Aptina, UK

09:10-09:25

R54

A Low Noise Low Power Global Shutter CMOS Pixel Having Single Readout Capability And Good Shutter Efficiency.

Yannick De Wit, Tomas Geurts. ON Semiconductor, Belgium

09:25-9:40

R55

Dark Current Characterization of CMOS Global Shutter Pixels using Pinned Storage Diodes

Keita Yasutomi, Yusuke Sadanaga, Taishi Takasawa, Shinya Itoh, Shoji Kawahito. Shizuoka University, Japan

9:40-9:55

R56

A Common Gate Pinned Photodiode Pixel

Yannick De Wit, Manuel Innocent. On Semiconductor, Belgium

Session 13: High-Speed and ADC Techniques

Session chair: Tetsuo Nomoto (Sony)
Inge Peters (Dalsa)

10:15-10:30

R57

Progress of Ultra-high-speed Image Sensors with In-situ CCD Storage

T. G. Etoh1, V. T. S. Dao1, H. D. Nguyen1, K. Fife2, M. Kureta3, M. Segawa3,       M. Arai4 and T. Shinohara4. 1Kinki University, Japan; 2Ubixum Inc, USA; 3JAEA, Japan; 4J-PARC, Japan

10:30-10:45

R58

Design of a PTC-Inspired Segmented ADC for High Speed Column Parallel CMOS Image Sensor

Steven Huang, Ramy Tantawy, Sinh Lam, Daniel Van Blerkom and Barmak Mansoorian. Forza Silicon Corporation, USA

10:45-11:00

R59

A 26.2Mpixel, 74fps, Global Shutter CMOS Imager with 20Gb/s Interface for Multi Object Monitoring

Cedric Esquenet, John Compiet, Tim Blanchaert, Tomas Geurts, Joost Decupere. ON Semiconductor, Belgium

11:00-11:15 High Speed 36 Gbps 12Mpixel global pipelined shutter CMOS image sensor with CDS

Jan Bogaerts, Koen Ruythooren, Aleksandar Gvozdenovic, Kevin Van Esbroeck,    Bart Ceulemans, Werner Ogiers, Gavril Arsinte, Xinyang Wang, Guy Meynants, CMOSIS nv, Belgium

11:15-11:30

R61

A High-Speed Low-Noise CIS with 12b 2-stage Pipelined Cyclic ADCs

Jong-Ho Park1, Satoshi Aoyama1, Takashi Watanabe1, Tomohiko Kosugi1,        Zheng Liu1, Tomoyuki Akahori1, Masaaki Sasaki1, Keigo Isobe1, Yuichi Kaneko1, Kazuki Muramatsu1, Tetsuya Iida1and Shoji Kawahito1,2. 1Brookman Technology, Inc., Japan; 2Shizuoka University, Japan

11:30-11:50

R62

A 33 Mpixel, 120 fps CMOS Image Sensor for UDTV Application with Two-stage Column-Parallel Cyclic ADCs

K. Kitamura1, T. Watabe1, Y. Sadanaga2, T. Sawamoto2, T. Kosugi3, T. Akahori3,    T. Iida3, K. Isobe3, T. Watanabe3,H. Shimamoto1, H. Ohtake1, S. Aoyama3,                 S. Kawahito2, and N. Egami1. 1NHK, Japan; 2Shizuoka University, Japan; 3Brookman Technology, Inc., Japan

11:50-12:10

R63

A 17.7Mpixel 120fps CMOS Image Sensor with 34.8Gb/s Readout

Takayuki Toyama1, Koji Mishima1, Hiroyuki Tsuchiya1, Tatsuya Ichikawa1, Hiroyuki Iwaki1, Yuji Gendai1, Hirotaka Murakami1, Kenichi Takamiya2,       Hiroshi Shiroshita1, Noriyuki Fukushima1. 1Sony, Japan; 2Sony LSI Design, Japan