2013 INTERNATIONAL IMAGE SENSOR WORKSHOP

Snowbird Resort, Utah, USA

June 12-16, 2013

PROGRAM


Wednesday June 12, 2013

17:30-20:30 Reception

Thursday, June 13, 2013

7:00 – 8:30 Breakfast
8:30 – 8:45 Welcome and Opening
Eric R. Fossum, Co-Chair and President, IISS
Boyd Fowler, Co-Chair

Session 01

Pixel Technology Overview and Small Pixel Sensors

Session chair: Nobukazu Teranishi (University of Hyogo / Shizuoka University)

08:45 – 09:00
1.01
Innovative Technology Elements for Large and Small Pixel CIS Devices
Ray Fontaine, Technology Analysis Group, Chipworks, Inc. Ottawa, Canada.
09:00 – 09:15
1.02
Blooming and Antiblooming in 1.1um-Pixel CIS
Calvin Chao, Kuo-Yu Chou, Charles Liu, Yi-Che Chen, Hon-Yih Tu, Hsiu-Yu Cheng, Fu-Lung Hsueh, and Shou-Gwo Wuu, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
09:15 – 09:30
1.03
Development of Lensed Color Filter Technology for Higher SNR and Lower Crosstalk CMOS Image Sensor
Hong-Ki Kim, Bumsuk Kim, Jung-Saeng Kim, Jungkuk Park, Yooseung Lee, Taesub Jung, Kyungho Lee, Heegeun Jung, Chang-Rok Moon, JungChak Ahn, Goto Hiroshige, Chi-Young Choi and Duckhyung Lee; LSI Product & Technology, System LSI Division, Samsung Electronics Co., Ltd.; Color Filter Technology Group, System LSI, Division, Samsung Electronics Co., Ltd, Yongin-City, Gyeonggi-Do, Korea.
09:30 – 09:45
1.04
Architecture and Development of Next Generation Small BSI Pixels
H. Tian, H. Komori, G. Agranov, J. Bai, J. Hynecek, C. Baron, H-W. Lee, X. Zhao, W. Gazeley, D. Tekleab, S. Nagaraja, W. Gao, P. Adepu, V. Rajasekaran, A. Rayankula, U. Boettiger, M. Mooney, B. Vaartstra, Aptina Imaging, San Jose, CA, USA.
09:45 – 10:10 Break

Session 02

Imaging Process and Specialty Pixels

Session co-chairs: Shou-Gwo Wuu (TSMC), Jungchak Ahn (Samsung)

10:10 – 10:25
2.01
Fundamental Ion Implantation Technologies for Image Sensor Devices
G. Fuse, and M. Sugitani SEN Corporation, Saijo, Japan. (Revised)
10:25 – 10:40
2.02
The Impact of Gate Edge Damage on Pixel Read Noise
Jhy-Jyi Sze, R.J. Lin, Seiji Takahashi, J.M. Hung, Y.C. Lu, T.H. Tseng, C.C. Wang, S.F. Ting, and Shou-Gwo Wuu, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C.
10:40 – 10:55
2.03
Photolithographic Solutions for Image Sensors with High Pixel Density
Ryo Sasaki, Yuhei Sumiyoshi, Yasuo Hasegawa and Seiya Miura, Canon Inc., Tochigi, Japan.
10:55 – 11:10
2.04
Dark Current Reduction in Image Sensors through Metals Gettering: A Critical Review of Disruptive Techniques
Venkataramana R. Chavva, Kyu-Ha Shim, and Todd Henry, Applied Materials.–. Varian semiconductor Equipment, Gloucester, MA, USA.
11:10 – 11:25
2.05
The DUV Stability of Superlattice-doped CMOS Detector Arrays
M. E. Hoenk, A. G. Carver, T. Jones, M. Dickie, P. Cheng, F. Greer, S. Nikzad (Jet Propulsion Laboratory, California Institute of Technology, CA, USA), J. Sgro (Alacron, Inc., Nashua, NH, USA), S. Tsur (Applied Materials Inc., Process, Diagnostics & Control, Rehovot, Israel).
11:25 – 11:40
2.06
High Quantum Efficiency Back Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays and their High Throughput Fabrication
Shouleh Nikzad, M. E. Hoenk, A. Carver, T.J. Jones, F. Greer, E. Hamden, and T. Goodsall, Jet Propulsion Laboratory, California Institute of Technology, USA.
11:40 – 13:10 Lunch

Session 03

Specialty Pixels and Application Specific Imagers

Session chair: Daniel Van Blerkom (Forza Silicon)

13:10 – 13:25
3.01
A 240×180 120dB 10mW 12us‐latency Sparse Output Vision Sensor for Mobile Applications
Raphael Berner, Christian Brandli, Minhao Yang, Shih-Chii Liu and Tobi Delbruck, Inst. of Neuroinformatics, University of Zurich and ETH Zurich, Zurich, Switzerland. (Slides)
13:25 – 13:40
3.02
Two-color Indirect X-ray Photon Counting Image Sensor
Bart Dierickx, Stijn Vandewiele, Benoit Dupont, Arnaud Defernez, Nick Witvrouwen, Dirk Uwaerts, Caeleste, Antwerp, Belgium.
13:40 – 13:55
3.03
Fully Organic Integrated Arrays on Flexible Substrates for X-Ray Imaging
Pawel E. Malinowski1, Abhishek Kumar, Date J.D. Moet, David Cheyns, Barry P. Rand, Jan-Laurens P.J. van der Steen, Kris Myny, Soeren Steudel, Matthias Simon, Gerwin Gelinck, and Paul Heremans; IMEC, Leuven, Belgium; Holst Centre, Eindhoven, The Netherlands, Philips Research, Eindhoven, The Netherlands. (Slides)
13:55 – 14:10
3.04
MEM-FLIM, a CCD Imager for Fluorescence Lifetime Imaging Microscopy
Jan Bosiers, Harry van Kuijk, Wilco Klaassens, René Leenen, Willem Hoekstra, Walter de Laat, Agnes Kleimann, Inge Peters, Jan Nooijen, Qiaole Zhao1, Ian Ted, Young, Sander de Jong, Kees Jalink, Teledyne DALSA Professional Imaging, The Netherlands, Delft University of Technology, Delft, NL; Lambert Instruments, Roden, NL; Netherlands Cancer institute, Amsterdam, NL.
14:10 – 14:25
3.05
A Direct-Detection X-Ray Cmos Image Sensor with 500 μm Thick High Resistivity Silicon
T. Hatsui, M. Omodani, T. Kudo, K. Kobayashi, T. Imamura,T. Ohmoto, A. Iwata,S. Ono,Y. Kirihara,T. Kameshima, H. Kasai, N. Miura, N. Kuriyama, M. Okihara, Y. Nagatomo, M. Nagasaki, T. Watanabe, Makina Yabashi1 , RIKEN Spring-8 Center, JASRI, A-R-Tec Corp., LAPIS Semiconductor Miyagi Co., Ltd., LAPIS Semiconductor Co., Ltd., ARKUS Inc, University of Hyogo, Japan.
14:25 – 14:40
3.06
A FSI CMOS Image Sensor with 200-1000 nm Spectral Response and High Robustness to Ultraviolet Light Exposure
Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda, Katsuhiko Hanzawa and Shigetoshi Sugawa, Graduate School of Engineering, Tohoku University, Miyagi, Japan.
14:40 – 15:05 Break

Session 04

Noise.

Session chair: Tetsuo Nomoto (SONY)

15:05 – 15:20
4.01
Read Noise Distribution Modeling for CMOS Image Sensors
Boyd Fowler, Dan McGrath, and Peter Bartkovjak, BAE Systems Imaging Solutions, Milpitas, CA 95035 USA.
15:20 – 15:35
4.02
Novel Device with Ultra Low Noise for Smaller CMOS Image Sensor Pixel
T.H. Hsu, Shou-Gwo Wuu, D.N. Yaung, J.C. Liu, H.H. Tseng, W.D. Wang, W.C. Hsu, W.I. Hsu, T.J. Wang, Y.L. Tu, C.S. Tsai, W.P. Mo, C.E. Chen
Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, R.O.C.
15:35 – 15:50
4.03
New Model of Dark Fixed Pattern Noise Generation in CMOS Imager Pixel with Negative Transfer-Gate Bias Operation
H. Sasaki, Y. Higashi, H. Yamashita, T. Yoshida, N. Momo, T. Ohguro, H. S. Momose, and Y. Toyoshima, Toshiba Corporation, Yokohama, Japan.
15:50 – 16:05
4.04
Emission Microscopy analysis of hot cluster defects of imagers processed on SOI
G. Meynants, W. Diels, J. Bogaerts, W. Ogiers, CMOSIS, Antwerp, Belgium.
16:05 – 16:30 Break

Session 05

Poster Flash Presentations

Session chair: Bart Dierickx (Caeleste)

16:30 – 17:30
5.01
Feed-Forward Voltage in CMOS Pinned Photodiodes
Mukul Sarkar (Indian Institute of Technology Delhi), Bernhard Büttgeny
(Mesa Imaging), and Albert J.P. Theuwissen (University of Technology Delft/Harvest Imaging).
5.02 1280×1024 Logarithmic Snapshot Image Sensor with Photodiode in Solar Cell mode
Yang Ni, New Imaging Technologies SA, France.
5.03 New Monolithic CMOS Sensors on a Fully Isolated Substrate
Abderrezak Mekkaoui, Dario Gnani, Maurice Garcia-Sciveres, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
5.04 Logarithmic Image Sensor for Wide Dynamic Range Stereo Vision System
Christian Bouvier, Yang Ni, New Imaging Technologies SA, France.
5.05 Segmented-base CMOS Image Sensor for Machine Vision Application
Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto
Tokyo University of Science, Tokyo, Japan.
5.06 1.1um Back-Side Illuminated Image Sensor Performance Improvement
Chi Han_Lin, Chih-Kung Chang, Yu-Kun Hsiao, Yueh-Ching Cheng, Chih-Cherng Jeng, Kuo-Cheng Lee, Chun-Hao Chou, Yi-Yi Cheng, Yen-Hsung Ho, Yin-Chieh Huang, Chin-Chuan Hsieh; VisEra Technologies Company, Hsinchu Science Park, Taiwan;  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Taiwan.
5.07 CF/ML Shift Optimization for Small Pixel CMOS Image Sensor through FDTD Simulation
Wu-Cheng Kuo, Wei-Chieh Chiang, Ren-Jie Lin, Yu-Kun Hsiao, Jen-Cheng Liu, Tsung-Hao Lin, Hui-Min Yang, D.N. Yaung, and Shou-Gwo Wuu, Chin-Chuan Hsieh VisEra Technologies Company, Hsinchu Science Park, Taiwan Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Taiwan.
5.08 The Image Quality Standard based on Human Visual System for the Spectral Sensitivity Crosstalk Depending on Lens F-number
Kazuyuki Matsushima, Masaaki Sato, Shinichiro Saito, Sony Corporation, Tokyo, Japan.
5.09 Application Demonstration Of Polarization-Analyzing CMOS Image Sensor and Performance Improvement Using 65 nm Standard CMOS Process
Takashi TOKUDA, Norimitsu WAKAMA, Toshihiko NODA, Kiyotaka SASAGAWA, Kiyomi KAKIUCHI, and Jun OHTA, Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, Japan.
5.10 Image Sensor Performance from a Security Camera Perspective
Anders Johannesson and Henrik Eliasson, Axis Communications AB, Lund, Sweden.
5.11 A Passive Integrator to Achieve Low Power, Low Noise Signal Amplification
Yannick De Wit, ON-Semiconductor, Mechelen, Belgium.
5.12 BSI Low Light Level CMOS Image Sensor Employing P-type Pixel
John Tower, James Janesick, Thomas Senko, Peter Levine, Mark Grygon, James Andrews, Judy Zhu, Thomas Vogelsong, SRI International, Princeton, NJ, USA Guang Yang, Steven Huang, Chao Sun, Barmak Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA.
5.13 A Low Power Counting Method in Ramp ADCs used in CMOS Image Sensors
Cheng Ma, Xinyang Wang, ChangChun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchum, China.
5.14 Single Slope ADC with On-chip Accelerated Continuous-time Differential Ramp Generator for Low Noise Column-Parallel CMOS Image Sensor
Dexue Zhang, Rami Yassine, Loc Truong, Jeff Rysinski, Daniel Van Blerkom and Barmak Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA.
5.15 Division-of-Focal-Plane Spectral-Polarization Imaging Sensor
Viktor Gruev, Meenal Kulkarni, Department of Computer Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA.
5.16 Simple Technique to Reduce FPN in a Linear-Logarithm APS
Carlos A. de Moraes Cruz, Davies W. de Lima Monteiro, Gilles Sicard and Alexandre K. P. Souza, Department of Electronics and Computation, Universidade Federal do Amazonas, Manaus, AM, Brazil; Graduate Program in Electrical Engineering – Federal University of Minas Gerais, Belo Horizonte, MG, Brazil;Department of Electrical Engineering, DEE/PPGEE, Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil; TIMA Laboratory, CNRS, Grenoble INP, Grenoble, France.
5.17 Reduction of Motion Blur in CMOS Linear Arrays and TDI Imagers
Benoit Dupont, Bart Dierickx, Caeleste, Antwerp, Belgium.
5.18 Column-Parallel Architecture for Line-of-Sight Detection Image Sensor based on Centroid Calculation
Hayato Kawakami, Satori Igarashi, Yuta Sasada, Junichi Akita, School of Electrical and
Comp. Eng., Kanazawa University, Kanazawa, Ishikawa, Japan. (Revised)
5.19 Image Lag Analysis and Photodiode Shape Optimization of 4T CMOS Pixels
Yang Xu1, Albert J.P. Theuwissen; Delft University of Technology, Delft, the Netherlands; Harvest Imaging, Bree, Belgium. (Revised)
5.20 A Radiation Tolerant 4T pixel for Space Applications: Layout and Process Optimization
Manuel Innocent, ON Semiconductor, Mechelen, Belgium.

Friday, June 14, 2013

7:00 – 8:30 Breakfast

Session 06

Avalanche Photo Diode and Photon Counting

Session chair: Lindsay Grant (ST Microelectronics)

08:30 – 08:45
6.01
CMOS Image Sensors Based on Linear Mode APDs: Analysis and Future Perspectives
Lucio Pancheri, Olga Shcherbakova, Nicola Massari, Gian-Franco Dalla Betta
and David Stoppa: University of Trento, Trento, Italy; Fondazione Bruno Kessler,
Trento, Italy.
08:45 – 09:00
6.02
Two-Dimensional Mapping of Photon Counts in Low-Noise Single-Proton Avalanche Diodes
Jau-Yang Wu, Shu-Cheng Li, Fang-Ze Hsu, and Sheng-Di Lin, Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan. (Revised)
09:00– 09:15
6.03
9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias Controlled Sensitivity
Neale A.W. Dutton, Lindsay A. Grant1, Robert K. Henderson ST Microelectronics Imaging Division, Pinkhill, Edinburgh, UK,The University of Edinburgh, Edinburgh, UK. (Slides)
09:15– 09:30
6.04
Stabilizing Sensitivity in Large Single-Photon Image Sensors with an Integrated 3.3-to-25V All-Digital Charge Pump
Shingo Mandaiy and Edoardo Charbon, Delft University of Technology, Delft, The Netherlands.
09:30– 09:45
6.05
A 92k SPAD Time-Resolved Sensor in 0.13μ m CIS Technology for PET/MRI Applications
Richard J. Walker, Leo H. C. Braga, Ahmet T. Erdogan, Leonardo Gasparini, Lindsay A. Grant, Robert K. Henderson, Nicola Massari, Matteo Perenzoni, David Stoppa; CMOS Sensors and Systems (CSS) Group, School of Engineering, The University of Edinburgh, Edinburgh, UK; Smart Optical Sensors and Interfaces (SOI) Group, Fondazione Bruno Kessler (FBK), Trento, Italy; Imaging Division, ST Microelectronics, Edinburgh, UK. (Slides)
09:45– 10:00
6.06
Monolithic Integration of LEDs and Silicon Photomultipliers in Standard CMOS Technology for Consumer Applications
Nupur Lodha, Shingo Mandai, and Edoardo Charbon; Circuits and Systems, Delft University of Technology, Delft, The Netherlands.
10:00– 10:15
6.07
Silicon integrated electrical micro – lens for CMOS SPADs based on avalanche propagation phenomenon
Chockalingam Veerappan, Student Member IEEE, Yuki Maruyama, Member IEEE, Edoardo Charbon, Senior Member IEEE
10:15 – 10:40 Break

Session 07 10:40 – 12:00

Poster Flash Presentations II

Session chair: Johannes Solhusvik (Omnivision)

7.01 Device Simulation with Electromagnetic Field Propagation Models for High-Speed Image Sensors and FDA Noise Analysis
Hideki Mutoh, Link Research Corporation, Odawara, Kanagawa, Japan. (Slides)
7.02 Monolithic integration of flexible spectral filters with CMOS image sensors at wafer level for low cost hyperspectral imaging
Murali Jayapala, Andy Lambrechts, Nicolaas Tack, Bert Geelen, Bart Masschelein, Philippe Soussan , IMEC,  Leuven, Belgium.
7.03 Prototype TDI sensors in embedded CCD in CMOS technology
Alper Ercan, Luc Haspeslagh, Koen De Munck, Kyriaki Minoglou, Anne Lauwers,Piet De Moor; Imec, Heverlee, Belgium; ESAT KU Leuven, Heverlee, Belgium.
7.04 A Dual Exposure Method for Wide Dynamic Range Operation of CMOS Image Sensors
Woon-Il Choi, Hashimoto Masashi, Masayuki Uno and Hi-Deok, Dept. of Electronics Engi., Chungnam National Univ., Daejeon, Korea; LG Innotek, Ansan, Kyeonggi, Korea; Linear Cell Design Corp. Ina-shi, Nagano, Japan.
7.05 A low – invasive micro imaging device for measuring neural activities implanted in the mouse deep brain
Jun Ohta, Chiakra Kitsumoto, Makito Haruta, Yoshinori Sunaga, Toshihiko Noda, Kiyotaka Sasagawa,Takashi Tokuda, Mayumi Motoyama, and Yasumi Ohta Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, Japan.
7.06 Designing Incremental Sigma – Delta ADCs for low Thermal Noise in Image Sensors
Hideki Mutoh, Link Research Corporation, Odawara, Kanagawa, Japan. (Revised)
7.07 Digital Integration Sensor
Song Chen, Andrew Ceballos, and Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA. (Revised , Slides)
7.08 Design of Analog Readout Circuitry with Front – end Multiplexing for Column Parallel Image Sensors
Steven Huang, David Estrada, Daniel Van Blerkom and Barmak Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA.
7.09 RF Design Issues and Challenges in a CMOS Image Sensor Process
Loc Truong, Dexue Zhang, Tomer Leitner1 and Barmak Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA, 1: Tower Semiconductor LTD.
7.10 A 120 μW vision chip with ROI detection
Arnaud Verdant, Antoine Dupret, Patrick Villard, Laurent Alacoque (CEA – LETI – MINATEC Campus, Grenoble, France), Hervé Mathias, Flavien Delgehier (IEF, Orsay, France).
7.11 Design of Pixel for High Speed CMOS Image Sensors
Zhongxiang Cao, Yangfan Zhou, Quanliang Li, Qi Qin, Liyuan Liu, and Nanjian Wu State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.
7.12 A multi-channel digital silicon photomultiplier array for nuclear medical imaging systems based on PET-MRI
Shingo Mandaiy and Edoardo Charbon, Delft University of Technology, Delft, The Netherlands.
7.13 Real – time Calibration of a 14 – Bit Single Slope ADC with 290MHz On – chip Accelerated Ramp Generator for Column – Parallel Image Sensors
Jonathan Bergey, Sam Bagwell, Jackson Law, Wilson Law, Forza Silicon Corporation, Pasadena, CA, USA.
7.14 A novel architecture for the implementation of a family o f high speed, multi-line CMOS image sensors
M. Moser, E. Fox, D. Deering, P. Donegan, M. Sonder, D. Marchesan, D. Verbugt, Binqiao Li, Feng-Hua Feng, Shujuan Xie, N. Safavian, R. Ghannoum, H. Mei, TELEDYNE DALSA Corporation, Waterloo, ON, Canada.
7.15 On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential
Vincent Goiffon, Julien Michelot, Pierre Magnan, Magali Estribeau, Olivier Marcelot, Paola Cervantes, Alice Pelamatti, and Philippe Martin-Gonthier, ISAE, Université de Toulouse, Toulouse, France; Pyxalis, Grenoble, France. (Revised)
7.16 Novel Auto-Adaptive Integration-Time Technique for CMOS Image Sensor
Hassan Abbass1, Hawraa Amhaz, David Alleyson, Gilles Sicard1, TIMA Laboratory (CNRS, Grenoble INP, UJF), LPNC Laboratory, Pierre Mendes France University, Grenoble, France.
7.17 Digital Integration Sensor
Emanuele Mandelli, Lester Kozlowski, AltaSens Inc, Westlake Village, CA, USA.
7.18 A Fully Depleted Backside Illuminated CMOS Imager with VGA Resolution and 15 micron Pixel Pitch
Stefan Lauxtermann, Vikram Vangapally, Sensor Creations Inc. (SCI), Camarillo, CA, USA. (Slides)
7.19 Linear High – Dynamic – Range Bouncing Pixel with Single Sample
Pablo N. A. Belmonte, P.J. French, Davies W. De Lima Monteiro, Frank Sill Torres, Department of Electrical Engineering, DEE/PPGEE, Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil; Delft University of Technology, Electronic Instrumentation Laboratory, Delft, The Netherlands.
7.20 Jailbreak Imagers: Transforming a Single-Photon Image Sensor into a True Random Number Generator
Samuel Burri, Damien Stucki, Yuki Maruyama, Claudio Bruschini, Edoardo Charbon, Francesco Regazzoni, EPFL, School of Engineering, Lausanne, Switzerland; ID Quantique, Switzerland; Delft University of Technology, Delft, Netherlands.
7.21 Comparison of Two Cameras based on Single Photon Avalanche Diodes (SPADS) for Fluorescence Lifetime Imaging Application with Picosecond Resolution
F. Powolny, S. Burri, C. Bruschini, X. Michalet, F. Regazzoni, E. Charbon, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland; Centre Hospitalier Universitaire Vaudois (CHUV), Lausanne, Switzerland; University of California, Los Angeles (UCLA), Los Angeles, USA;Delft University of Technology, Delft, The Netherlands.
7.22 Radiation-hard Active Pixel Detectors for Tracking of Charged Particles based on HV-CMOS Technology
F. Bompard, S. Feigl, M. Garcia-Sciveres, L. Meng, D. Muenstermann, P. Pangaud, I. Peric, and A. Rozanov1, CPPM, Aix-Marseille Universite, Marseille, France; CERN, Geneve, Switzerland; Lawrence Berkeley National Laboratory, Berkeley, CA, USA; DPNC, Universite de Geneve, Geneve, Switzerland; Institute for Computer Science, University of Heidelberg, Mannheim, Germany.
7.23 Digital Calibration Algorithm for 2 – Stage Cyclic ADC used in 33 – Mpixel 120 – fps CMOS Image Sensor
T. Watabe, K. Kitamura, T. Hayashida, T. Kosugi, H. Ohtake, H. Shimamoto, S. Kawahito, and N. Egami; NHK Engineering System, Inc., Setagaya-ku, Tokyo, JAPAN ; NHK Science and Technology Research Laboratories; Brookman Technology, Inc.; Shizuoka University, Japan.
7.24 An Optical Punch – Through Diode and Gate Biasing 1 – T Pixel for Binary Pixels in Fully Digital CMOS Image Sensor
Hyung-june Yoon and Edoardo Charbon; EPFL, Lausanne, Switzerland; Delft University of Technology, Delft, Netherlands.
7.25 A 5.2Mpixel@250Fps 16Gbps CMOS Image Sensor with Embedded Digital Processor for Reconfigurability and on-chip Image Correction
Francisco Jiménez-Garrido, José Fernández-Pérez, Cayetana Utrera, José Ma Muñoz, Ma. Dolores Pardo, Rafael Domínguez-Castro, Fernando Medeiro and Angel Rodríguez-Vázquez; 1Universidad de Sevilla, Instituto de Microelectrónica de Sevilla (IMSE-CNM), Sevilla, Spain; Consejo Superior de Investigaciones Científicas (CSIC), Instituto de Microelectrónica de Sevilla (IMSE-CNM); Innovaciones Microelectrónicas S.L. (ANAFOCUS); Sevilla (Spain).
7.26 Reconfigurable Focal-Plane Hardware for Block-Wise Intra-Frame HDR Imaging
Jorge Fernandez-Berni, Ricardo Carmona-Galan, Angel Rodrıquez-Vazquez, Institute of Microelectronics of Seville (CSIC – Universidad de Sevilla) Seville, Spain.
12:00-13:30 Lunch
13:30 – 17:30 Social Event – Tram Ride to Hidden Peak (11,000 ft)
17:30 – 19:00 Poster viewing and reception

Saturday, June 15, 2013

7:00 – 8:30 Breakfast

Session 08

Invited Presentation, Array Imagers and Large Area Sensors

Session co-chairs: Junichi Nakamura (Aptina Imaging), Shouleh Nikzad (JPL, California Institute of Technology)

08:45 – 09:05
8.01
Zooming in to Multi – Aperture Cameras
Gal Shabtay, Noy Cohen, David Mendlovic and Eran Kali, Corephotonics Ltd, Israel.
09:05 – 09:20
8.02
LASSENA: A 6.7 M egapixel, 3 – sides Buttable Wafer – Scale CMOS Sensor using a novel grid – addressing architecture
I Sedgwick, D Das, N Guerrini, B Marsh, R Turchetta, Science and Technology Facilities Council, Rutherford Appleton Laboratory, UK.
09:20– 09:35
8.03
Requirements, developments and challenges for and CMOS image sensors for space applications
P.Garé, N.Nelms, Y.Nowicki-Bringuier, D.Martin, R.Meynart, M.Zahir, European Space Agency, Noordwijk, The Netherlands.
09:35– 09:50
8.04
Fabrication of large format, fully depleted CCDs for the Dark Energy Survey Camera
S.E. Holland, C.J. Bebek, K.S. Dawson, H.T. Diehl, F. Dion, J.H. Emes, J. Estrada, R. Frost, R. Groulx, A. Karcher, W.F. Kolbe, D. Kubik, N.P. Palaio, C.H. Tran, G. Wang, and N.A. Roe; Lawrence Berkeley National Laboratory, Berkeley, CA, USA; Teledyne DALSA Semiconductor, Bromont, Québec, Canada; Fermi National Accelerator Laboratory, Batavia, IL, USA; University of Utah, Salt Lake City, UT, USA. (Revised)
09:50– 10:15
8.05
A 12 MP 16 – Focal Plane CMOS I mage S ensor with 1.75 μm Pixel : Architecture and Implementation
Kwang-Bo Cho, Nick Tu, John Brummer, Khandaker Azad, Leo Hsu, Vivian Wang, Dongsoo Kim, Krishna Palle, Tien-Min Miao, Yandong Chen, Canaan Hong, Toan Bao, Vitanshu Sharma1, Yuan Fong, Kumudini Irkar, Syed Hashmi, Vinesh Sukumar, Salman Kabir, Gershon Rosenblum, Yong Gao, Kil-Ho Ahn, Hyuk-Jin Ko, Jeff Watson, Chris Kenoyer; Aptina, LLC, San Jose, CA, USA; Aptina Korea Co, Seoul, Korea; Aptina, LLC, Corvallis, OR, USA.
10:05 – 10:30 Break

Session 09

Image Sensor Design

Session chair: Alex Krymski (Alexima)

10:30 – 10:45
9.01
Application of Photon Statistics to the Quanta Image Sensor
Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA. (Slides)
10:45 – 11:00
9.02
Early Research Progress on Quanta Image Sensors
Saleh Masoodian, Yue Song, Donald Hondongwa, Jiaju Ma, Kofi Odame and Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA. (Slides)
11:00 – 11:15
9.03
Organic CMOS Image Sensor with Thin Panchromatic Organic Photoelectric Conversion Layer : Durability and Performance
Mikio Ihama, Hideyuki Koguchi, Hiroshi Inomata, Hideki Asano,Yuuki Imada, Yasuyoshi Mishima, Yoshihisa Kato, Yutaka Hirose, Mizuki Segawa, Tetsuya Ueda, Shinji Kishimura; Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kanagawa, Japan; Industrial Devices Company, Panasonic Corporation, Nagaokakyo City, Kyoto, Japan.
11:15 – 11:30
9.04
Fabrication of large format, fully depleted CCDs for the Dark Energy Survey Camera
S.E. Holland, C.J. Bebek, K.S. Dawson, H.T. Diehl, F. Dion, J.H. Emes, J. Estrada, R. Frost, R. Groulx, A. Karcher, W.F. Kolbe, D. Kubik, N.P. Palaio, C.H. Tran, G. Wang, and N.A. Roe; Lawrence Berkeley National Laboratory, Berkeley, CA, USA; Teledyne DALSA Semiconductor, Bromont, Québec, Canada; Fermi National Accelerator Laboratory, Batavia, IL, USA; University of Utah, Salt Lake City, UT, USA. (Revised)
11:30 – 11:45
9.05
A 4K2K 60fps Image Sensor Based on Stagger-laced Dual-exposure Technique
Yusuke Okada, Takeo Azuma, Toshinobu Matsuno, Hiroyoshi Komobuchi (Panasonic Corporation, Kyoto, Japan), Jan Craninckx, Bertrand Parvais, Kyriaki Minoglou, Koen De Munck, Luc Haspeslagh, Piet De Moor (IMEC, Heverlee, Belgium), Serge Biesemans (now at TEL Europe).
11:45 – 12:00 9.06 24 MPixel 36 x 24 mm2 14 bit image sensor in 110/90 nm CMOS techn
G. Meynants, J. Bogaerts, B. Wolfs, B .Ceulemans, T. DeRidder, A. Gvozdenović, E. Gillisjans, X. Salmon, G. VandeVelde, CMOSIS nv, Antwerp, Belgium.
12:00 – 12:15 9.07 A 1.1 e – rms temporal noise 87 .5 dB DR CMOS image sensors with low – noise transistors and column – parallel ADCs
Min-Woong Seo, Takehide Sawamoto, Tomoyuki Akahori, Zheng Liu, Keita Yasutomi, Keiichiro Kagawa, and Shoji Kawahito; 1Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu, Japan; Brookman Technology, Inc, Hamamatsu, Japan.
12:15 – 13:45 Lunch

Session 10

Depth Sensing, TOF, and Time Resolving Imaging.

Session co-chairs: David Stoppa (Fondazione Bruno Kessler), Edoardo Charbon (Delft University of Technology)

13:45 – 14:00
10.01
A CMOS Image Sensor for In-Pixel Background Suppression and Frequency and Phase Detection for Structured Light 3-D Acquisition Systems
Hiroki Yabe (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) and Makoto Ikeda (VLSI Design and Education Center (VDEC), The University of Tokyo, Tokyo, Japan).
14:00 – 14:15
10.02
Compact Ambient Light Cancellation Design and Optimization for 3D Time-of-Flight Image Sensors
 Yibing M. Wang, Ilia Ovsiannikov, Sung-Jae Byun, Tae-Yon Lee, Yongjei Lee, Grzegorz Waligorski, Hongyu Wang, Seunghoon Lee2, Dong-Ki Min, Yoondong Park, Tae-Chan Kim, Chi-Young Choi, Gabsoo Han, and Eric R. Fossum; Samsung Semiconductor, Inc., Pasadena, CA, USA; Samsung Electronics Co. Ltd., Image Development Team, Giheung, South Korea; Kunsan National University, Dept. of Physics, Jeonbuk, South Korea.
14:15 – 14:30
10.03
3dim: Compact and Low Power Time-of-Flight Sensor for 3D Capture Using Parametric Signal Processing
Andrea Colaco, Ahmed Kirmani, Nan-Wei Gong,Tim McGarry, Laurence Watkins, and Vivek K Goyal, 1Massachusetts Institute of Technology; 3dim Tech, Inc.; Princeton Optronics.
14:30 – 14:45
10.04
CMOS Image Sensor for 3-D Range Map Acquisition With Pixel-Parallel Correlation In Region of Interest
Takahiko Matsushima and Makoto Ikeda; Department of Electrical Engineering and Information Systems, The University of Tokyo; VLSI Design and Education Center (VDEC), The University of Tokyo, Tokyo, Japan.
14:45 – 15:00
10.05
A Time-Of-Flight Image Sensor with Sub-mm Resolution Using Draining Only Modulation Pixels
Keita Yasutomi, Takahiro Usui, Sang-Man Han, Masatoshi Kodama,Taishi Takasawa, Keiichiro Kagawa, Shoji Kawahito; Shizuoka University, Hamamatsu, Japan.
15:00 – 15:15 10.06 CMOS Lock – in Pixel Image Sensor s with Lateral Eelectric Field Cotrol for Time – Resolved Imaging
Shoji Kawahito, Guseul Baek, Zhuo Li, Sang-Man Han, Min-Woong Seo, Keita Yasutomi and Keiichiro Kagawa; Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
15:15 – 15:40 Break

Session 11

Invited Presentation and High Speed.

Session chair: Shoji Kawahito (Shizuoka University)

15:40 – 15:55
11.01
CMOS Image Sensor Pixel with 2D CCD M em ory B ank for Ultra High Speed Imaging with Large Pixel Count
A. Lahav, J. Crooks, B. Marsh, R. Turchetta, and A. Fenigstein, TowerJazz Semiconductor Ltd, Migdal Haemek, Israel; STFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK.
15:55 – 16:10
11.02
Ultra ‐ high speed imaging at megaframes per second with a megapixel CMOS image sensor
 J. Crooks, B. Marsh, R. Turchetta, K. Taylor, W. Chan, A. Lahav, A. Fenigstein, STFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK; Specialised Imaging, Tring, Hertfordshire, UK; TowerJazz Semiconductor Ltd, Migdal Haemek, Israel. (Revised , Slides)
16:10 – 16:25
11.03
High speed, backside illuminated 1024×1 line imager with charge domain frame store in Espros Photonic CMOS TM technology
Martin Popp, Beat De Coi, Dieter Huber, Pascal Ferrat, Markus Ledergerber, Espros Photonics AG, Sargans, Switzerland. ( Slides)
16:25 – 16:40
11.04
Toward one Giga frames per second: Multi-Collection-Gate BSI Image Sensors
Takeharu G. Etoh, Son V. T. Dao, Tetsuo Yamada and Edoardo Charbon, Ritsumeikan University, Kusatsu, Japan; Tokyo Polytechnic University, Atsugi, Japan; Technische Universiteit Delft, Delft, the Netherlands.
16:40 – 16:55
11.05
A 5 Megapixel, 1000fps CMOS I mage S ensor with H igh Dynamic Range and 14 – bit A/D C onverters
Bart Cremers, Manuel Innocent, Carl Luypaert, John Compiet, Ishwar Chandra Mudegowdar, Cedric Esquenet, Genis, Chapinal, Wiet Vroom, Tim Blanchaert, Thomas Cools, Joost Decupere, Roel Aerts, Peter Deruytere, Tomas Geurts; ON Semiconductor, Mechelen, Belgium. (Revised , Slides)
16:55 – 17:15 11.06 Keynote Presentation: Many Pixels Make Light Work
Mike Tompsett  (Slides)
18:30 – 20:30 Dinner and 2013 IISS Awards

Best Poster Award: Song Chen, et al., Digital Integration Sensor

Walter Kosonocky Award: K. Kitamura, et al. A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters

Exceptional Service Award to: Albert JP Theuwissen “For exceptional contributions to the education of image sensor specialists”

Exceptional Lifetime Achievement Award to: Gene Weckler “For exceptional contributions to the field of solid-state image sensors”

Sunday, June 16, 2013

7:00 – 8:30 Breakfast

Session 12

Global Shutter

Session chair: Albert Theuwissen (Harvest Imaging)

8:30 – 8:45
12.01
Low Noise High Efficiency 3.75 μm and 2.8 μm Global Shutter CMOS Pixel Arrays
Sergey Velichko, Gennadiy Agranov, Jaroslav Hynecek, Scott Johnson, Hirofumi Komori, Jenny Bai, Igor Karasev, Rick Mauritzson, Xianmin Yi, Victor Lenchenkov, Sarah Zhao, Hyuntae Kim; Aptina, Meridian, ID, USA, Aptina, San Jose, CA, USA. (Slides)
8:45 – 9:00
12.02
IR Enhanced Global Shutter Pixel for High Speed Applications
Assaf Lahav, Adi Birman, Dima Veinger, Amos Fenigstein, Dexue Zhang, Daniel Van Blerkom; TowerJazz Semiconductor Ltd, Migdal Haemek, Israel; Forza Silicon Corp., CA, USA.
9:00 – 9:15
12.03
3.5 μm global shutter pixel with transistor sharing and correlated double sampling
B. Wolfs, J. Bogaerts, G. Meynants; CMOSIS nv, Antwerpen, Belgium.
9:45 – 10:00
12.04
Global Shutter Pixel with Floating Storage Gate
Alex Krymski, Luxima Technology LLC/ Alexima, Pasadena, CA, USA.
9:30 – 9:45
12.05
High frame-rate global shutter image sensor with dual-reset branch SAR ADC architecture
Daniel Van Blerkom, Jeff Rysinski, Yingying Wang, Kevin Stevulak, Christophe Basset, Loc Truong, Rami Yassine, Guang Yang, Chao Sun, Kai Ling Ong, Steve Huang, Forza Silicon Corporation, Pasadena, CA, USA.
9:45 – 10:00 12.06 A 4e-noise 2/3-inch global shutter 1920x1080P120 CM OS-Imager
Peter Centen, Steffen Lehr , Sabine Roth, Jeroen Rotte, Friedrich Heizmann, Akbar Momin, Ralf Dohmen, Karl-Heinz Schaaf, Klaas Jan Damstra, Ruud van Ree, Michael Schreiber; Grass Valley, Breda, The Netherlands, Viimagic; Villingen, Germany.
10:00 – 10:25 Break

Session 13

Invited Presentation, Oversampling, and High Dynamic Range

Session co-chairs: Shigetoshi Sugawa (Tohoku University), Vladimir Koifman (Analog Value)

10:25 – 10:45
13.01
Invited Presentation: Image Quality of Oversampling Cameras
Juha Alakarhu, Samu Koskinen, Eero Tuulos, Nokia Corporation, Camera Technologies, Tempere, Finland.
10:45 – 11:00
13.02
Overcoming the Full Well Capacity Limit: High Dynamic Range Imaging Using Multi – Bit Temporal Oversampling and Conditional Reset
Thomas Vogelsang, Michael Guidash, Song Xue, Rambus Inc, Sunnyvale, CA, USA. (Slides)
11:00 – 11:15
13.03
A comparison of high dynamic range CIS technologies for automotive applications
Johannes Solhusvik, Jiangtao Kuang, Zhiqiang Lin, Sohei Manabe, Jeong-Ho Lyu, Howard Rhodes, OmniVision Technologies
11:15 – 11:30
13.04
An Overflow Photo-gate Pixel Enables High FWC and I mproved Proton Radiation Tolerance in CMOS Pixels
Yannick De Wit & Manuel Innocent, ON-Semiconductor, Mechelen, Belgium.
11:30 – 11:45
13.05
A CMOS HDR Imager with an Analog Local Adaptation
Gilles Sicard, Hassan Abbas, Hawraa Amhaz*, Hakim Zimouche**, Robin Rolland, David Alleysson3; CNRS, G-INP, UJF, TIMA Laboratory, Grenoble, France; CIME-Nanotech, Grenoble, France; CNRS, UPMF, LPNC Laboratory, Grenoble, France; *Now with CEA LETI, **Now with LIRMM Laboratory, Montpellier, France.
11:45 – 12:00 Wrap Up and Close
Boyd Fowler, Co-Chair
12:00 – 13:30 Lunch