| Session 01 | Stacked Image Sensors |
| Session chair: Yusuke Oike (Sony) Dun-Nien Yaung (TSMC) | |
| An Advanced CuCu Hybrid Bonding For Novel Stacked CMOS Image Sensor | |
| R01 | Y. Kagawa1, N. Fujii2, K. Aoyagi2, Y. Kobayashi1, S. Nishi1, S. Takeshita1, J. Taura1, H. Takahashi2, Y. Nishimura2, K. Tatani2, M. Kawamura1, H. Nakayama1, T. Nagano2, K. Ohno2, H. Iwamoto2, S. Kadomura1, T. Hirayama2. 1Sony Semiconductor Manufacturing, Japan; 2Sony Semiconductor Solutions, Japan |
| A 3D Stacked Programmable Image Processing Engine in a 40nm Logic Process with a Detector Array in a 45nm CMOS Image Sensor Technologies | |
| R02 | Biay‐Cheng Hseih1, Sami Khawam1, Nousias Ioannis1, Mark Muir1, Khoi Le1, Keith Honea1, Sergio Goma1 , RJ Lin2, Chin‐Hao Chang2, Charles Liu2, Shang‐Fu Yeh2, Hong‐Yi Tu2, Kuo‐Yu Chou2, Calvin Chao2. 1Qualcomm Technologies Inc., USA; 2TSMC, Taiwan, ROC |
| 1.0um Pixel Improvements with Hybrid Bond Stacking Technology | |
| R03 | V.C. Venezia, C. Shih, W.Z. Yang, Y. Zang, Z. Lin, L. A. Grant, and H. Rhodes. Omnivision Technologies, USA |
| Vertically Integrated Edgeless Photon Imaging Camera | |
| R04 | Farah Fahim1, Grzegorz Deptuch1, Alpana Shenai1, Piotr Maj2, Piotr Kmon2, Paweł Grybos2, Robert Szczygieł2, D. Peter Siddons3, Abdul Rumaiz3, Anthony Kuczewski3, Joseph Mead3, Rebecca Bradford4, John Weizeorick4. 1Fermi National Accelerator Laboratory, USA; 2AGH-UST, Poland; 3Brookhaven National Laboratory, USA; 4Argonne National Laboratory, USA |
| Low Dark Current and Low Noise 0.9 mm Pixel in a 45 nm Stacked CMOS Image Sensor Process Technology |
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| R05 | Seiji Takahashi, Yi-Min Huang, Jhy-Jyi Sze, Tung-Ting Wu, Fu-Sheng Guo, Wei-Cheng Hsu, Tung-Hsiung Tseng, Chia-Ching Liao, Chin-Chia Kuo, Tzu-Hsiang Chen, Wei-Chieh Chiang, Chun-Hao Chuang, Keng-Yu Chou, Chi-Hsien Chung, Kuo-Yu Chou, Chien-Hsien Tseng, Chuan-Joung Wang and Dun-Nien Yaung. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC |
| A Survey of Enabling Technologies in Successful Consumer Digital Imaging Products |
|
| R06 | R. Fontaine. TechInsights, Canada |
| Session 02 | Noise |
| Session chair: Boyd Fowler (OmniVision Technologies) Hidekazu Takahashi (Canon) |
|
| Dark Current Limiting Mechanisms in CMOS Image SensorsPresentation slides here | |
| R07 | Dan McGrath1, Steve Tobin1, Vincent Goiffon2, Marius Sergent2, Pierre Magnan2, Alexandre Le Roch3. 1BAE Systems, USA; 2ISAE-SUPAERO, Université de Toulouse, France; 3CNES, France |
| Development of Low Noise Memory Node in a 2.8um Global Shutter Pixel with Dual Transfer |
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| R08 | Masafumi Tsutsui1, Tatsuya Hirata1, Keishi Tachikawa1, Ikuo Mizuno1, Masakatsu Suzuki1, Dmitry Veinger2, Adi Birman2 & Assaf Lahav2. 1Towerjazz Panasonic Semiconductor Co. Ltd., Japan; 2TowerJazz, Israel |
| Temporal Noise Improvement Using the Selective Application of the Fluorine Implantation in the CMOS Image Sensor |
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| R09 | Man-Lyun Ha, Min-Kyu Kang, Sang-Won Yoon, Chang-Hoon Han, Juil Lee, and Yoon-Jong Lee. Dongbu HiTek, Korea |
| Random Telegraph Noise Pixel Classification and Time Constant Extraction for a 1.1mm Pitch 8.3MP CMOS Image Sensor |
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| R10 | Calvin Chao, Honyih Tu, Thomas Wu, Kuo-Yu Chou, Shang-Fu Yeh, and Fu-Lung Hsueh. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC |
| Statistical Analysis of Random Telegraph Noise in Source Follower Transistors with Various Shapes |
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| R11 | Shinya Ichino1, Takezo Mawaki1, Shunichi Wakashima1, Akinobu Teramoto2, Rihito Kuroda1, Phillipe Gaubert2, Tetsuya Goto2, Tomoyuki Suwa2 and Shigetoshi Sugawa1,2. 1Graduate School of Engineering, Tohoku University, Japan; 2New Industry Creation Hatchery Center, Tohoku University, Japan |
| Impact of Random Telegraph Noise with Various Time Constants and Number of States in CMOS Image Sensors |
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| R12 | Rihito Kuroda1,Akinobu Teramoto2 and Shigetoshi Sugawa1,2. 1Graduate School of Engineering, Tohoku University, Japan; 2New Industry Creation Hatchery Center, Tohoku University, Japan |
| Session 03 | Image Sensor Optics |
| Session chair: Bumsuk Kim (Samsung) | |
| A Spectral Imaging System with an Over 70dB SNR CMOS Image Sensor and Electrically Tunable 10nm FWHM Multi-Bandpass Filter | |
| R13 | Yasuyuki Fujihara1, Yusuke Aoyagi1, Satoshi Nasuno1, Shunichi Wakashima1, Rihito Kuroda1, Kohei Terashima1, Takahiro Ishinabe1, Hideo Fujikake1, Kazuhiro Wako2 and Shigetoshi Sugawa1. 1Tohoku University, Japan; 2National Institute of Technology, Sendai College, Japan |
| A Study on “On Chip Hybrid IRC Technology” to Provide a Thinner Solution for CIS | |
| R14 | Li-Kai Lee1, Chih-Chieh Chang1, Yu-Kun Hsiao1, JC_Hsieh1, Kazuaki Hashimoto2, Chien-Hsien Tseng2, Chun-Hao Chuang2, Wei-Chieh Chiang2. 1VisEra Technologies Company, Taiwan; 2Taiwan Semiconductor Manufacturing Company, Taiwan |
| Quantum Efficiency Simulation with Boltzmann Transport Equation for Motion Modeling of Individual Particles in Photodiodes | |
| R15 | Yuichiro Yamashita1, Masayuki Uchiyama1, Dun-Nian Yaung1, Natsumi Minamitani2 and Yoshinari Kamakura2. 1Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan; 2Osaka University, Japan |
| Nanostructured Metallic Color Filter for Wide-Range and Multi-Band Image Sensor | |
| R16 | Atsushi Ono1, Atsutaka Miyamichi2, Hiroki Kamehama2, Keiichiro Kagawa1, Keita Yasutomi1, and Shoji Kawahito1. 1Research Institute of Electronics, Shizuoka University, Japan; 2 Graduate School of Integrated Science and Technology, Shizuoka University, Japan |
| Lens Solution for Intensity Enhancement in Large-Pixel Single-Photon Avalanche Diode | |
| R17 | Sheng-Chuan Cheng,Chih-Ching Chang, Kuo-Feng Lin, Chien-Hsiung Huang, Lin-Ya Tseng, Hui-Min Yang, Ken Wu, JC Hsieh. VisEra Technologies Company, Taiwan |
| Session 04 | Poster Presentations |
| Session chair: Vladimir Koifman (Analog Value) Jun Ohta (Nara Institute of Science and Technology) |
|
| P01 | A Proposal of PUF Utilizing Pixel Variations in the CMOS Image Sensor |
| Shunsuke Okura1,Yuki Nakura2, Masayoshi Shirahata3, Mitsuru Shiozaki3, Takaya Kubota3, Kenichiro Ishikawa1, Isao Takayanagi1, and Takashi Fujino4. 1Brillnics Japan Inc., Japan; 2Graduate School of Science and Technology Ritsumeikan University, Japan; 3Department of Science and Engineering Ritsumeikan University, Japan; 4Research Organization of Science and Engineering Ritsumeikan University, Japan |
|
| P02 | A Miniature Imaging Device Using a Self-Reset Image Sensor for Hemodynamic Imaging |
| Kiyotaka Sasagawa, Makito Haruta, Takahiro Yamaguchi, Yasumi Ohta, Toshihiko Noda, Takashi Tokuda, and Jun Ohta. Nara Institute of Science and Technology, Japan |
|
| P03 | CMOS Terahertz Imaging Pixel with a Small On-Chip Antenna |
| Shota Hiramatsu1, Kosuke Wakita1, Seokjin Na2, Sayuri Yokoyama2, Masayuki Ikebe2 and Eiichi Sano1. 1Research Center for Integrated Quantum Electronics, Hokkaido University, Japan; 2Graduate School of Information Science and Technology, Hokkaido University, Japan |
|
| P04 | Investigations on Cryogenic Operation of Pinned Photodiode Pixels |
| Philippe Martin-Gonthierr, Pierre Magnan, Olivier Marcelot. ISAE-SUPAERO, Université de Toulouse, France |
|
| P05 | Differential Digital Double Sampling Readout Scheme for a 4T 4-Shared Pixel with Reduced Interconnection |
| Jeroen Rotte1, Peter Centen1, Juul van den Heijkant1, Adi Birman2, Dmitry Veinger2. 1Grass Valley, The Netherlands; 2TowerJazz, Israel |
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| P06 | Column-Parallel Dynamic TDC Reallocation in SPAD Sensor Module Fabricated in 180nm CMOS for Near Infrared Optical Tomography |
| Scott Lindner1,2, Chao Zhang3, Ivan Michel Antolovic3, Juan Mata Pavia1,2, Martin Wolf1, Edoardo Charbon2,3. 1University Hospital Zurich, Switzerland; 2EPFL, Switzerland; 3TUDelft, The Netherlands |
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| P07 | Extending the Dynamic Range of Oversampled Binary SPAD Image Sensors |
| Neale A.W. Dutton1, Tarek Al Abbas2, Istvan Gyongy2, Robert K. Henderson2. 1STMicroelectronics, UK; 2The University of Edinburgh, UK |
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| P09 | Recent Enhancements to Electron Multiplying CCD Image Sensors |
| Eric G. Stevens, J. Clayhold, H. Doan, R. Fabinski, J. Hynecek, S. Kosman, and C. Parks. ON Semiconductor, USA |
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| P10 | 8.25µm Pitch 66% Fill Factor Global Shared Well SPAD Image Sensor in 40nm CMOS FSI Technology |
| T. Al Abbas1, N.A.W. Dutton2, O. Almer1, F.M. Della Rocca1,2, S. Pellegrini2, B. Rae2, D. Golanski3 and R.K. Henderson1. 1The University of Edinburgh, UK; 2STMicroelectronics, UK; 3STMicroelectronics, France |
|
| P11 | Two-Tier Geiger-Mode Avalanche Detector for Charged Particle Imaging |
| Lucio Pancheri1, Andrea Ficorella1, Paolo Brogi2,3, Gianmaria Collazuol4, Gian-Franco Dalla Betta1, Pier Simone Marrocchesi2,3, Fabio Morsani3, Lodovico Ratti5, Aurore Savoy-Navarro6. 1DII, Università di Trento and TIFPA-INFN, Italy; 2DFSTA, Università di Siena, Italy; 3NFN Sezione di Pisa, Italy; 4DFA, Università di Padova, and INFN Sezione di Padova, Italy; 5DIII, Università di Pavia, and INFN Sezione di Pavia, Italy; 6Laboratoire APC, University Paris-Diderot/CNRS, France |
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| P12 | HAS3: A Radiation Tolerant CMOS Image Sensor for Space ApplicationsRevised version on 2017-06-09 here |
| Manuel Innocent, Thomas Cools, Carl Luypaert, Cedric Esquenet, Wiet Vroom, Ishwar Chandra Mudegowdar, Ioannis Thanasopoulos, Patrick Pintens, Joost Decupere, Tomas Geurts. ON Semiconductor, Belgium |
|
| P13 | Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate BiasPoster presentation here |
| Konstantin D. Stefanov, Andrew S. Clarke, James Ivory and Andrew D. Holland. The Open University, UK | |
| P14 | Ultrafast Signal Processing Readout Front-End Electronics in CMOS 40nm Technology for Hybrid Pixel Detectors Operating in Single Photon Counting Mode. |
| Rafal Kleczek, Pawel Grybos, Robert Szczygiel. AGH University of Science and Technology, Poland | |
| P15 | An Imager with Five 20000 x 15 Pixel TDI CCDs for Photogrammetry Applications |
| Jan Bosiers, Erik-Jan Manoury, Harry van Kuijk, Wilco Klaassens, Holger Stoldt, René Leenen, Herman Peek, Walter de Laat. Teledyne DALSA Professional Imaging, The Netherlands | |
| P16 | Charge-Coupled CMOS TDI Imager |
| Hyun Jung Lee, Paul Donegan, David Atos, Feng-Hua Feng, Eric Fox, Roula Ghannoum, Jason Guan, Willy Maes, David Marchesan, Matt Moser, Nixon O, Mark Ruiter, Tsung-Hsun Tsai, and Laurens Korthout. Teledyne DALSA Inc., Canada | |
| P17 | Design and Characterization of a 3.5um Pitch, 8192 Resolution, 5 Spectrum CMOS TDI Image Sensor |
| Cheng Ma1, Quan Zhou1, Lanlan Liu1, Yang Li1, Adri Mierop2, Agnes Kleimann2, Xinyang Wang1. 1Gpixel Inc., China; 2now with X-FAB Semiconductor Foundries AG, Germany | |
| P18 | A 7-band CCD-in-CMOS Multispectral TDI Imager</a > |
| David San Segundo Bello1, Maarten De Bock1, Pierre Boulenc1, Roeland Vandebriel1, Linkun Wu1,2, Jan Van Olmen1, Vezio Malandrucculo1, Jan Craninckx1, Luc Haspeslagh1, Stefano Guerrieri1, Maarten Rosmeulen1, Jonathan Borremans1. 1imec, Belgium; 2Vrije Universiteit Brussel, Belgium |
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| P19 | A 1 × 16 SiPM Array for Automotive 3D Imaging LiDAR SystemsPoster presentation here |
| Salvatore Gnecchi, Carl Jackson. SensL Technologies, Ireland | |
| P20 | A 320×240 10um CAPD ToF Image Sensor with Improved Performance |
| Ward van der Tempel, Alper Ercan, Thomas Finateu, Korina Fotopoulou, Christian Mourad, Florentina Agavriloaie, Sebastien Resimont, Luca Cutrignelli, Peter Thury, Camilo Ernesto Medina, Sa Xiao, Jean-Luc Loheac, Jernej Perhavc, Tomas Van de Hauwe, Victor Belokonskiy, Luc Bossuyt, Wouter Aerts, Marc Pauwels, Daniel Van Nieuwenhove. Softkinetic, Belgium |
|
| P21 | Simulating the Performance Required for Multi-Tap Charge Modulation Pixels in Time-Resolved Biomedical Imaging |
| Keiichiro Kagawa1,2, Nobukazu Teranishi1,3, Keita Yasutomi1, Rolf Saager2, Min-Woong Seo1, Shoji Kawahito1, Anthony Durkin2, and Bruce Tromberg2. 1Shizuoka University, Japan; 2UC Irvine, USA; 3University of Hyogo, Japan |
|
| P22 | Transfer-Gate Region Optimization and Pinned-Photodiode Shaping for High-Speed TOF Applications |
| Fabio Acerbi1, Manuel Moreno Garcia1, Gözen Köklü2, Bernhard Büttgen2, Radoslaw Gancarz2, Alice Biber2, Daniel Furrer2, David Stoppa1. 1Fondazione Bruno Kessler, Italy; 2Heptagon Advanced Micro Optics Pte Ltd., Switzerland |
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| P24 | Event-Driven Correlated Double Sampling for Pulse-Frequency-Modulation A/D Converters Integrated in Pixel-Parallel Image Sensors |
| Masahide Goto1, Yuki Honda1, Toshihisa Watabe1, Kei Hagiwara1, Masakazu Nanba1, Yoshinori Iguchi1, Takuya Saraya2, Masaharu Kobayashi2, Eiji Higurashi2, Hiroshi Toshiyoshi2, and Toshiro Hiramoto2. 1NHK Science and Technology Research Laboratories, Japan; 2The University of Tokyo, Japan |
|
| P25 | Image Sensor With Multiple Sub-radix-2 SAR ADC Calibration and Residual Column Pattern Noise Correction |
| Daniel Van Blerkom, Steve Huang, Barmak Mansoorian. Forza Silicon Corporation, USA | |
| P26 | A High-Speed Imager with Low-Power PTC-Inspired Column-Multiplexed Readout |
| Maarten De Bock, Mingxu Liu, Peter Van Wesemael, Annachiara Spagnolo, Jan Craninckx, Koen De Munck, Celso Cavaco, Luc Haspeslagh, Stefano Guerrieri, Maarten Rosmeulen, Jonathan Borremans. imec, Belgium | |
| P27 | A Small Pixel High Performance Full Frame HDR Sensor |
| Salman Kabir, Michael Guidash, Thomas Vogelsang, Craig Smith, Alex Schneider, Jay Endsley. Rambus Inc., USA | |
| P28 | QLOG – Logarithmic CMOS Pixel with Single Electron Detection Capability |
| Yang Ni. New Imaging Technologies, France | |
| P29 | Back Side Illuminated High Dynamic Range 3.0μm Pixel Featuring Vertical p-n Junction Capacitance in A Deep Pinned Photodiode |
| K. Mori, S.Okura, T. Hasegawa, S. Tanaka and I.Takayanagi. Brillnics Japan Inc., Japan | |
| P30 | How to Hand-Calculate MTF in Front-Side and Backside Illuminated Image SensorsPoster presentation here |
| Bart Dierickx1, Jean Bourgain2, Bert Luyssaert1. 1Caeleste, Belgium; 2Institute for Advanced Study, USA | |
| P31 | A Study on Photon Effect to Image Plane</a > |
| Kangbong Seo, Sungryong Lee, Peter Ahn, Dohwan Kim and Kwangbo Cho. SK Hynix semiconductor Inc., Korea | |
| P32 | Photodiode Barrier Induced Lag Characterization Using a New Lag versus Idle Time Methodology |
| W. Gao, M. Guidash, N. Li, R. Ispasoiu, P. R. Ailuri, N. Palaniappan, D. Tekleab, M. Rahman. ON Semiconductor, CA, USA | |
| P33 | A CMOS Front-end for GaN-based UV Imaging |
| Preethi Padmanabhan1, Bruce Hancock2, Shouleh Nikzad2, L. Douglas Bell2, Kees Kroep3, Edoardo Charbon1,3. 1AQUA Laboratory, EPFL, Switzerland; 2Jet Propulsion Laboratory, California Institute of Technology, USA; 3AQUA Laboratory, TU Delft, The Netherlands | |
| P34 | Ultraviolet and Visible Spectral Imaging of Hydrogen Flames Using an Organic Photoconductive Film CMOS Imager |
| T. Okino, S. Yamahira, S. Yamada, Y. Hirose, A. Odagawa, Y. Kato and T. Tanaka. Panasonic Corporation, Japan | |
| P35 | Low Dark Current UV-VIS Planar- electrode Perovskite CMOS Image Sensor |
| Yan-Rung Lin1, Pei-Wen Yen1, Sheng-Min Yu2, Shiu-Cheng Lou1, Kai-Ping Chuang1, Bor-Nian Chuang1, Yen-Chih Chiou3, Chih-Cheng Hsieh3, Cheng-Hung Hou4, Feng-Yu Tsai4. Industrial Technology Research Institute, 1Center for Measurement Standards, 2Material and Chemical Research Laboratories, Taiwan; 3National Tsing Hua University, Taiwan; 4National Taiwan University, Taiwan |
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| P38 | A 5 Million fps Global Shutter Megapixel Sensor with Shutter Efficiency in Excess of 120 dB |
| S. Benhammadi1, B. Marsh1, K. Taylor2, W. Chan2, A. Birman3, A. Lahav3, A. Fenigstein3, R. Turchetta4. 1STFC Rutherford Appleton Laboratory, UK; 2Specialised Imaging, UK; 3TowerJazz Semiconductor Ltd., Israel; 4WegaPixel SL, Spain |
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| P39 | A 10 μm pitch, SXGA Multifunctional IRFPA ROIC with In-Pixel Laser Event Detection and High Dynamic Range Imaging |
| C.G. Jakobson, I. Pivnik, R. Dobromislin, G. Zohar, O. Cohen, Y. Chaham, N. Shiloah, R. Talmor, E. Ilan, I. Nevo, W. Freiman, N. Ben Ari, R. Fruhi, T. Shapira, R. Fraenkel. SCD Semiconductor Devices, Israel | |
| P40 | A 75.6μVrms Read Noise CMOS Image Sensor with Pixel Noise Reduction Using Noise-Coupled Amplifier |
| Chanmin Park1, Injun Park1, Woo Jin Jo1, Jimin Cheon2 and Youngcheol Chae1. 1Yonsei University, Korea; 2Kumoh National Institute of Technology, Korea |
|
| P41 | A New Radiation Hardened CMOS Image Sensor for Nuclear Plant |
| T. Watanabe1, T. Takeuchi2, O. Ozawa3, H. Komanome3, T. Akahori1, K. Tsuchiya2. 1Brookman Technology, Inc., Japan; 2Japan Atomic Energy Agency, Japan; 3Ikegami Tsushinki Co., Ltd., Japan |
|
| P42 | Optical Characteristics of Multi-Storied Photodiode CMOS Image Sensor with 3D Stacking Technology |
| Y. Takemoto, M. Tsukimura, N. Takazawa, H. Kato, S. Suzuki, J. Aoki, T. Kondo, H. Saito, Y. Gomi, S. Matsuda, and Y. Tadaki. Olympus Corporation, Japan | |
| P43 | Development of Vertical Thin Poly-Si Channel Transfer Gate Structured Pixel for 3D CIS Applications |
| Young-Jun Kwon1, Sung-Kun Park1, Sung-Wook Cho1, Kyoung-In Lee1, Sung-Man Kim1, Chris Hong1, In-Wook Cho1, Jae-Hyun Park2, and Kyung-Dong Yoo2. 1SK Hynix, Korea; 2Hanyang University, Korea | |
| P44 | Three-Transistor-Pixel CMOS Image Sensor for 8K Super Hi-Vision Stacked Sensor with Highly Sensitive Photoconversion Layer |
| Toshihisa Watabe, Yuki Honda, Masakazu Nanba, Hiroshi Ohtake, and Misao Kubota. NHK Science and Technology Research Laboratories, Japan | |
| P45 | Fresnel Zone Plates : Plasmonics Filtering for SPADS Sensors |
| Flavien Hirigoyen. STMicroelectronics, France | |
| Session 05 | Photon Counting and Photon-based Imaging |
| Session chair: Bart Dierickx (Caeleste) Neale A.W. Dutton (STMicroelectronics) |
|
| Experimental Comparison of MOSFET and JFET 1.1mm Pitch Jots in 1Mjot Stacked BSI Quanta Image SensorsPresentation slides here | |
| R18 | Jiaju Ma1, Saleh Masoodian1, Tzu-Jui Wang2 and Eric R. Fossum1. 1Thayer School of Engineering at Dartmouth College, USA; 2Taiwan Semiconductor Manufacturing Company, Taiwan |
| A 1Mjot 1040fps 0.22e-rms Stacked BSI Quanta Image Sensor with Cluster‐Parallel ReadoutPresentation slides here | |
| R19 | Saleh Masoodian1, Jiaju Ma1, Dakota Starkey1, Yuichiro Yamashita2, and Eric R. Fossum1. 1Thayer School of Engineering, Dartmouth College, USA; 2Taiwan Semiconductor Manufacturing Company (TSMC), Taiwan |
| A 512×512 SPAD Image Sensor with Built-In Gating for Phasor Based Real-Time siFLIMPresentation slides here | |
| R20 | Arin Can Ulku1, Claudio Bruschini1, Xavier Michalet2, Shimon Weiss2, Edoardo Charbon1. 1AQUA laboratory, EPFL, Switzerland; 2University of California at Los Angeles, USA |
| 3 µm Pitch, 1 µm Active Diameter SPAD Arrays in 130nm CMOS Imaging Technology | |
| R21 | Ziyang You1, Luca Parmesan1*, Sara Pellegrini2, Robert K. Henderson1. 1The University of Edinburgh, UK; 2STMicroelectronics, UK; *now with Fondazione Bruno Kessler, Italy |
| Object Tracking and Reconstruction with a Quanta Image Sensor | |
| R22 | Istvan Gyongy1, Tarek Al Abbas1, Neale A.W. Dutton2, Robert K. Henderson1. 1The University of Edinburgh, U.K.; 2STMicroelectronics, U.K. |
| A Flexible 32×32 Dual-Side Single-Photon Image Sensor | |
| R23 | Pengfei Sun1,2, Junjie Weng1, Ryoichi Ishihara1 and Edoardo Charbon1. 1Delft University of Technology, The Netherlands; 2X-FAB Semiconductor Foundries AG, Germany |
| Session 06 | Invited Presentation and Range Imaging |
| Session chair: David Stoppa (Fondazione Bruno Kessler) Gennadiy Agranov (Apple) |
|
| Invited Presentation-I | |
| I1 | Sensors for Future AR/VR Applications |
| Chiao Liu, Michael Hall, Renzo De Nardi, Nicholas Trail, Richard Newcombe. Oculus Research, Facebook Inc., USA |
|
| A High-Resolution Time-of-Flight Range Image Sensor with a 3-Tap Lateral Electric Field Charge ModulatorRevised version per 2017-06-05 here | |
| R24 | Keita Yasutomi, Yuki Morikawa, Shoma Imanishi, Taishi Takasawa, Keiichiro Kagawa, Shoji Kawahito. Shizuoka University, Japan |
| Mutually Coupled Ring Oscillators for Large Array Time-of-Flight Imagers | |
| R25 | Augusto Ronchini Ximenes1, Preethi Padmanabhan2, and Edoardo Charbon1,2. 1Delft University of Technology, The Netherlands; 2AQUA Laboratory, EPFL, Switzerland |
| 3D Imaging with CMOS Single-Photon Detector Arrays for Space Applications: Ground-Based Measurements and Irradiation Tests | |
| R26 | Matteo Perenzoni1, Daniele Perenzoni1, David Stoppa1, Alexandre Pollini2, Jacques Haesler2, Christophe Pache2. 1Fondazione Bruno Kessler, Italy; 2CSEM, Switzerland |
| Indirect ToF Pixel Integrating Fast Buried-Channel Transfer Gates and Gradual Epitaxy, and Enabling CDS | |
| R27 | Boris Rodrigues1,3, Marie Guillon2, Nicolas Billon-Pierron2, Jean-Baptiste Mancini2, Olivier Saxod2, Benoit Giffard2, Yvon Cazaux2, Pierre Malinge3, Patrice Waltz3, Auguste Ngoua3, Yannick Kerleguer3, Alisée Taluy3, Sarah Kuster3, Sylvain Joblot3, François Roy3, Guo-Neng Lu1. 1Univ. Claude Bernard Lyon 1, France; 2Univ. Grenoble Alpes, France; 3STMicroelectronics, France |
| A Low-Power Low-Cost High-Speed 2D/3D Camera for Virtual Reality Headsets, Mobile Devices and Automobiles | |
| R28 | Yibing M. Wang1,3, Ilia Ovsiannikov1,3, Jang-Woo You3, Peter Deane2, Dirk Smits2, Yong-Hwa Park3*, Maarten Niesten2, Sungwoo Hwang3, Chilhee Chung3. 1Samsung Semiconductor, Inc., USA; 2Samsung Strategy and Innovation Center, USA; 3Samsung Advanced Institute of Technology, Korea; *Now with KAIST |
| Session 07 | High Dynamic Range |
| Session chair: Johannes Solhusvik (OmniVision Technologies) Orly Yadid-Pecht (University of Calgary) | |
| An 87dB Single Exposure Dynamic Range CMOS Image Sensor with a 3.0µm Triple Conversion Gain Pixel | |
| R29 | I. Takayanagi, N. Yoshimura, K. Mori, S. Tanaka, S. Matsuo, H. Abe, N. Yasuda, K. Ishikawa, S. Okura, S. Ohsawa and T. Otaka. Brillnics Japan Inc., Japan |
| A Native HDR 115dB 3.2µm BSI Pixel Using Electron and Hole Collection |
|
| R30 | Frédéric Lalanne, Pierre Malinge, Didier Hérault and Clémence Jamin-Mornet. STMicroelectronics, France |
| A 98dB Linear Dynamic Range, High Speed CMOS Image Sensor | |
| R31 | Tomas Geurts, Bart Cremers, Manuel Innocent, Wiet Vroom, Cedric Esquenet, Thomas Cools, John Compiet, Burak Okcan, Genis Chapinal, Carl Luypaert, Patrick Pintens, Roel Aerts. ON Semiconductor, Belgium |
| A Method to Increase DR Using Column-Level Automatic Gain Selection |
|
| R32 | Gaozhan Cai1, Wei Wang1, Bert Luyssaert1, Bart Dierickx1, Gerlinde Ruttens1, Bert Uwaerts1, Dirk Uwaerts1, Jente Basteleus1, Jens De Vroe1, Walter Verbruggen1, Peng Gao1, Donal Denvir2 , Philip Steen2. 1Caeleste CVBA, Belgium; 2Andor Technology Ltd., UK |
| A 0.5e–rms Temporal-Noise CMOS Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain | |
| R33 | Xiaoliang Ge1, Albert Theuwissen1,2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging, Belgium |
| 140dB Dynamic Range Sub-electron Noise Floor Image Sensor | |
| R34 | Sergey Velichko1, Scott Johnson1, Dan Pates1, Chris Silsby2, Cornelis Hoekstra2, Ray Mentzer2, Jeff Beck2. 1ON Semiconductor, ID, USA; 2ON Semiconductor, OR, USA |
| A 1392×976 2.8μm 120dB CIS with Per-Pixel Controlled Conversion GainPresentation slides here | |
| R35 | Johannes Solhusvik1, Sam Hu2, Robert Johansson1, Zhiqiang Lin2, Siguang Ma2, Keiji Mabuchi2, Sohei Manabe2, Duli Mao2, Bill Phan2, Howard Rhodes2, Charles Shan2, Eric Webster2, and Trygve Willassen1. 1OmniVision Technologies, Norway; 2OmniVision Technologies, USA |
| Session 08 | Invited Presentation and High Speed |
| Session chair: Shigetoshi Sugawa (Tohoku University) Michael Guidash (RM Guidash Consulting) | |
| Invited Presentation-II | |
| I2 | Extreme Imaging and Beyond |
| Cheng Lei1, Yasuyuki Ozeki2, and Keisuke Goda1,3,4. 1Department of Chemistry, University of Tokyo, Japan; 2Department of Electrical Engineering and Information Systems, University of Tokyo, Japan; 3University of California, Los Angeles, USA; 4Japan Science and Technology Agency, Japan | |
| The Temporal Resolution Limit of the Silicon Image Sensors | |
| R36 | Takeharu Goji Etoh1,2, Anh Quang Nguyen1, Yoshinari Kamakura2, Kazuhiro Shimonomura1, Yen Le Thi2 and Nobuya Mori2. 1Ritsumeikan University, Japan; 2Osaka University, Japan |
| 10Mfps 960 Frames Video Capturing Using a UHS Global Shutter CMOS Image Sensor with High Density Analog Memories | |
| R37 | Manabu Suzuki1, Masashi Suzuki1, Rihito Kuroda1, Yuki Kumagai2, Akira Chiba2, Noriyuki Miura2, Naoya Kuriyama2 and Shigetoshi Sugawa1. 1Tohoku University, Japan; 2LAPIS Semiconductor Miyagi Co., Ltd., Japan |
| In-Pixel Storage Techniques for CMOS Burst-Mode Ultra-High-Speed Imagers | |
| R38 | L. Wu1,2, D. San Segundo Bello2, P. Coppejans2, A. Süss2, M. Rosmeulen2, J. Craninckx2, P. Wambacq1,2, J. Borremans2. 1Vrije Universiteit Brussel, Belgium; 2imec, Belgium |
| A 0.64 microseconds Row-Time CMOS Image Sensor using Gm-Enhanced Repeater Source Follower Buffer and Column Parallel Pipelined ADC | |
| R39 | Toshinori Otaka, Shintaro Maekawa, Hiroyuki Yamaguchi and Takayuki Hamamoto. Tokyo University of Science, Japan |
| Single Photon Counting Hybrid Pixel Detectors with 85 ns Dead Time, 70 kfps Frame Rate and TSV Option. | |
| R40 | P. Maj1, E. Dufresne2, P. Grybos1, K. Kasinski1, P. Kmon1, A. Koziol1, S. Narayanan2, A. Sandy2, R. Szczygiel1, Q. Zhang2. 1AGH University of Science and Technology, Poland; 2Argonne National Laboratory, USA |
| Session 09 | ADC |
| Session chair: Guy Meynants (AMS) | |
| A SAR-ΔΣ ADC with Dynamic Integrator for Low-Noise CMOS Image SensorsPresentation slides here | |
| R41 | Akira Matsuzawa, and Masaya Miyahara. Tokyo Institute of Technology, Japan |
| A 12-bit Column-Parallel Flash TDC-Interpolated Ramp ADC with Online Digital Delay Element Correction | |
| R42 | Deyan Levski1, Martin Wäny2, Bhaskay Choubey1. 1University of Oxford, UK; 2Austria Microsystems AG., Portugal |
| A 12-bit, 0.9-μs Single-Slope ADC for Embedded TDI-CCD and CMOS Line-Scan Image Sensor | |
| R43 | Tsung-Hsun Tsai, Paul Donegan, David Atos, Feng-Hua Feng, Eric Fox, Roula Ghannoum, Jason Guan, Tihomir Hodalin, Hyun Jung Lee, Willy Maes, David Marchesan, Brad Moon, Matt Moser, Mark Ruiter, and Laurens Korthout. Teledyne DALSA Inc., Canada |
| A Highly Linear CMOS Image Sensor with a Digitally Assisted Linearity-Calibration MethodRevised version on 2017-06-12 here |
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| R44 | Fei Wang1, Liqiang Han2, Albert J. P. Theuwissen1,3. 1Delft University of Technology, The Netherlands; 2Tianjin University, China; 3Harvest Imaging, Belgium |
| A 5-Megapixel 100-Frames-per-second 0.5erms Low Noise CMOS Image Sensor With Column-Parallel Two-Stage Oversampled Analog-to-Digital Converter | |
| R45 | J. A. Segovia1, F. Medeiro1,2, A. González1, A. Villegas1, A. Rodríguez-Vázquez1,2. 1Teledyne AnaFocus, Spain; 2Inst. of Microelectronics of Seville (Univ. de Sevilla & CSIC), Spain |
| 12-bit Column-Parallel Single-Slope ADCs with Operation-Period-Reduced Time-to-Digital Converters for CMOS Image Sensors |
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| R46 | Yoshio Hagihara, Yusaku Koyama, Susumu Yamazaki, Takanori Tanaka, Atsuko Kume, Yosuke Kusano, Mai Arita, Masashi Saito, and Yoshihisa Okada. Olympus Corporation, Japan |
| Session 10 | Invited Presentation and Specialty Image Sensors |
| Session chair: Edoardo Charbon (Delft Univ. of Technology) Pierre Magnan (ISAE) | |
| Invited Presentation-III | |
| I3 | 8K Imaging Systems and Their Medical Applications —World’s First 8K Rigid Endoscope Camera— |
| Kenkichi Tanioka, Medical Imaging Consortium, Japan | |
| UV/Optical Photon Counting and Large Format Imaging Detectors from CubeSats, SmallSats to Large Aperture Space Telescopes & Imaging Spectrometers | |
| R47 | Shouleh Nikzad1, April D. Jewel1, Alex G. Carver1, John J. Hennessy1, Michael E. Hoenk1, Sam Cheng1, Timothy M. Goodsall1, Gillian Kyne2, Erika Hamden2, and Todd J. Jones1. 1Jet Propulsion Laboratory, California Institute of Technology, USA; 2California Institute of Technology, USA |
| CMOS Image Sensor Architecture for Primal-Dual Coding | |
| R48 | Navid Sarhangnejad, Hyunjoong Lee, Nikola Katic, Matthew O’Toole, Kiriakos Kutulakos, Roman Genov. University of Toronto, Canada |
| A 1ms High-Speed Vision Chip with 3D-Stacked 140GOPS Column-Parallel PEs for Diverse Sensing Applications | |
| R49 | Atsushi Nose1, Tomohiro Yamazaki1, Hironobu Katayama1, Shuji Uehara1, Masatsugu Kobayashi1, Sayaka Shida1, Masaki Odahara2, Kenichi Takamiya2, Yasuaki Hisamatsu2, Shizunori Matsumoto2, Leo Miyashita3, Yoshihiro Watanabe3, Takashi Izawa1, Yoshinori Muramatsu1, Yoshikazu Nitta1, Masatoshi Ishikawa3. 1Sony Semiconductor Solutions, Japan; 2Sony LSI Design, Japan; 3The University of Tokyo, Japan |
| High Speed Backside Illuminated TDI CCD-in-CMOS SensorPresentation slides here | |
| R50 | Pierre Boulenc1, Jo Robbelein1, Linkun Wu1,2, Vasyl Motsnyi1, Luc Haspeslagh1, Stefano Guerrieri1, Jonathan Borremans1, Maarten Rosmeulen1. 1imec, Belgium; 2Vrije Universiteit Brussel, Belgium |
| Session 11 | Invited Presentation and Non-Visible Imaging |
| Session chair: Shouleh Nikzad (Jet Propulsion Laboratory) Vyshnavi Suntharalingam (MIT) |
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| Invited Presentation-IV | |
| I4 | Current Status of CCDs for Astronomical Observations and the Development of a Large Mosaic Camera |
| Satoshi Miyazaki. The National Astronomical Observatory of Japan, Japan | |
| Event-Driven Dual-Gain Fully-Depleted SOI Based X-Ray Detector for High Energy Particle Imaging | |
| R51 | Sumeet Shrestha1, Hiroki Kamehama1, Keita Yasutomi1, Keiichiro Kagawa1, Nobukazu Teranishi1, Ayaki Takeda2, Takeshi Go Tsuru2, Yasuo Arai3 and Shoji Kawahito1. 1Shizuoka University, Japan; 2Kyoto University, Japan; 3High Energy Accelerator Research Organization (KEK), Japan |
| Radiation-hard, Nanosecond-gated CMOS Imaging Detectors | |
| R52 | Michael E. Hoenk1, April D. Jewell1, Shouleh Nikzad1, Doug Trotter2, Quinn Looker2, Gideon Robertson2. 1Jet Propulsion Laboratory, California Institute of Technology, USA; 2Sandia National Laboratories, USA |
| A QuantumFilm Based QuadVGA 1.5µm Pixel Image Sensor with Over 40% QE at 940 nm for Actively Illuminated Applications. | |
| R53 | Lionel Barrow, Nikolai Bock, Aurelien Bouvier, Dario Clocchiatti, Jian Feng, Naveen Kolli, Andras Pattantyus, Vitanshu Sharma, Tzi-Hsiung Shu, Emanuele Mandelli. InVisage Technologies, USA |
| Monolithic Near Infrared Image Sensors Enabled by Quantum Dot PhotodetectorPresentation slides here | |
| R54 | Pawel E. Malinowski1, Epimitheas Georgitzikis1,2, Jorick Maes3,4,Mehedi Mamun1,4, Oscar Enzing1, Fortunato Frazzica1,5, Jan Van Olmen1, Piet De Moor1, Paul Heremans1,2, Zeger Hens3,4, and David Cheyns1. 1IMEC, Belgium; 2KU Leuven, Belgium; 3Physics and Chemistry of Nanostructures, Ghent University, Belgium; 4Center for Nano- and Biophotonics, Ghent University, Belgium; 5Vrije Universiteit Brussel, Belgium |
| Challenges in Improving the Performances of Radiation Hard CMOS Image Sensors for Gigarad (Grad) Total Ionizing Dose | |
| R55 | Vincent Goiffon1, Serena Rizzolo1, Franck Corbière1, Sébastien Rolando1, Aziouz Chabane1, Marius Sergent1, Philippe Paillet2, Sylvain Girard3, Magali Estribeau1, Pierre Magnan1, Marco Van Uffelen4, Laura Mont Casellas4, Marc Gaillardin2, Robin Scott5 and Wouter De Cock6. 1ISAE-SUPAERO, France; 2CEA DAM-DIF, France; 3Université de Saint-Etienne, France; 4Fusion for Energy, Spain; 5Oxford Technologies Ltd., UK; 6SCK-CEN, Belgium |
| Session 12 | Global Shutter |
| Session chair: Eric Stevens (ON Semiconductor) Daniel Van Blerkom (Forza Silicon) | |
| Cross Talk, Quantum Efficiency, and Parasitic Light Sensitivity Comparison for Different Near Infra-Red Enhanced sub 3um Global Shutter Pixel Architectures |
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| R56 | Assaf Lahav1, Dmitry Veinger1 Adi Birman1, Masakatsu Suzuki2, Tatsuya Hirata2, Keishi Tachikawa2, Masafumi Tsutsui2, Toshifumi Yokoyama2, Yoshiaki Nishi2 and Ikuo Mizuno2. 1TowerJazz Semiconductors, Israel; 2Towerjazz Panasonic semiconductor, Japan |
| A High Optical Performance 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure
Revised version on 2017-06-05 here |
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| R57 | Hiroshi Sekine, Masahiro Kobayashi, Yusuke Onuki, Kazunari Kawabata, Toshiki Tsuboi, Yasushi Matsuno, Hidekazu Takahashi, Shunsuke Inoue, and Takeshi Ichikawa. Canon Inc., Japan |
| Design of Double Micro Lens Structure for 2.8um Global Shutter Pixel | |
| R58 | Toshifumi Yokoyama1, Masakatsu Suzuki1, Yoshiaki Nishi1, Ikuo Mizuno1 and Assaf Lahav2. 1Towerjazz Panasonic semiconductor Co,. Ltd., Japan; 2TowerJazz SemiConductors, Israel |
| A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, 7 e–rms Read Noise, 80 μV/e– CG and >80 % VIS-QE | |
| R59 | Andreas Süss1, Linkun Wu2,1, Jean-Luc Bacq1, Annachiara Spagnolo1, Philippe Coppejans1, Vasyl Motsnyi1, Luc Haspeslagh1, Jonathan Borremans1, Maarten Rosmeulen1. 1IMEC, Belgium; 2Vrije Universiteit Brussel, Belgium |
| A Global Shutter, Backside Illumination CMOS Image Sensor for Satellite Navigation | |
| R60 | David Price1, Rick Jerome1, Akihiro Hasegawa1, Jeff Gambino1, Rusty Winzenread2, Kyle Thomas2, Andrew Piner2, Michael Wu3, Patti Guidash4, Tom Carducci4, Tom Frank4, Bill Desjardin4, Rich Brolly4, Thad Smith5, Brandon Riebeek5, Eddie Glines5, Gerald Heim6, Tom Ebben6, Rino Marinelli7, Onorato Di Cola7, Giovanni De Amicis7. 1ON Semiconductor, OR, USA; 2ON Semiconductor, CA, USA; 3ON Semiconductor, AZ, USA; 4ON Semiconductor, NY, USA; 5ON Semiconductor, ID, USA; 6Ball Aerospace, USA; 7LFoundry, Italy |
| A 47 MPixel 36.4 x 27.6 mm2 30 fps Global Shutter Image Sensor |
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| R61 | Guy Meynants, Bram Wolfs, Jan Bogaerts, Peishuo Li, Zhisheng Li, Yongjia Li, Ybe Creten, Koen Ruythooren, Pascale Francis, Raf Lafaille, Pieter De Wit, Gerd Beeckman, Jan Martin Kopfer. AMS, Belgium |
| Closing Remarks | |
