2017 Papers

Session 01 Stacked Image Sensors
Session chair: Yusuke Oike (Sony)
Dun-Nien Yaung (TSMC)
An Advanced CuCu Hybrid Bonding For Novel Stacked CMOS Image Sensor
R01 Y. Kagawa1, N. Fujii2, K. Aoyagi2, Y. Kobayashi1, S. Nishi1, S. Takeshita1, J. Taura1, H. Takahashi2, Y. Nishimura2, K. Tatani2, M. Kawamura1, H. Nakayama1, T. Nagano2, K. Ohno2, H. Iwamoto2, S. Kadomura1, T. Hirayama2. 1Sony Semiconductor Manufacturing, Japan; 2Sony Semiconductor Solutions, Japan
A 3D Stacked Programmable Image Processing Engine in a 40nm Logic Process with a Detector Array in a 45nm CMOS Image Sensor Technologies
R02 Biay‐Cheng Hseih1, Sami Khawam1, Nousias Ioannis1, Mark Muir1, Khoi Le1, Keith Honea1, Sergio Goma1 , RJ Lin2, Chin‐Hao Chang2, Charles Liu2, Shang‐Fu Yeh2, Hong‐Yi Tu2, Kuo‐Yu Chou2, Calvin Chao2. 1Qualcomm Technologies Inc., USA; 2TSMC, Taiwan, ROC
1.0um Pixel Improvements with Hybrid Bond Stacking Technology
R03 V.C. Venezia, C. Shih, W.Z. Yang, Y. Zang, Z. Lin, L. A. Grant, and H. Rhodes. Omnivision Technologies, USA
Vertically Integrated Edgeless Photon Imaging Camera
R04 Farah Fahim1, Grzegorz Deptuch1, Alpana Shenai1, Piotr Maj2, Piotr Kmon2, Paweł Grybos2, Robert Szczygieł2, D. Peter Siddons3, Abdul Rumaiz3, Anthony Kuczewski3, Joseph Mead3, Rebecca Bradford4, John Weizeorick4. 1Fermi National Accelerator Laboratory, USA; 2AGH-UST, Poland; 3Brookhaven National Laboratory, USA; 4Argonne National Laboratory, USA
Low Dark Current and Low Noise 0.9 mm Pixel in a 45 nm Stacked CMOS Image Sensor Process Technology
R05 Seiji Takahashi, Yi-Min Huang, Jhy-Jyi Sze, Tung-Ting Wu, Fu-Sheng Guo, Wei-Cheng Hsu, Tung-Hsiung Tseng, Chia-Ching Liao, Chin-Chia Kuo, Tzu-Hsiang Chen, Wei-Chieh Chiang, Chun-Hao Chuang, Keng-Yu Chou, Chi-Hsien Chung, Kuo-Yu Chou, Chien-Hsien Tseng, Chuan-Joung Wang and Dun-Nien Yaung. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC
A Survey of Enabling Technologies in Successful Consumer Digital Imaging Products
R06 R. Fontaine. TechInsights, Canada
Session 02 Noise
Session chair: Boyd Fowler (OmniVision Technologies)
Hidekazu Takahashi (Canon)
Dark Current Limiting Mechanisms in CMOS Image Sensors

Presentation slides here

R07 Dan McGrath1, Steve Tobin1, Vincent Goiffon2, Marius Sergent2, Pierre Magnan2, Alexandre Le Roch3. 1BAE Systems, USA; 2ISAE-SUPAERO, Université de Toulouse, France; 3CNES, France
Development of Low Noise Memory Node in a 2.8um Global Shutter Pixel with Dual Transfer
R08 Masafumi Tsutsui1, Tatsuya Hirata1, Keishi Tachikawa1, Ikuo Mizuno1, Masakatsu Suzuki1, Dmitry Veinger2, Adi Birman2 & Assaf Lahav2. 1Towerjazz Panasonic Semiconductor Co. Ltd., Japan; 2TowerJazz, Israel
Temporal Noise Improvement Using the Selective Application of the Fluorine Implantation in the CMOS Image Sensor
R09 Man-Lyun Ha,  Min-Kyu Kang, Sang-Won Yoon, Chang-Hoon Han, Juil Lee, and Yoon-Jong Lee. Dongbu HiTek, Korea
Random Telegraph Noise Pixel Classification and Time Constant Extraction for a 1.1mm Pitch 8.3MP CMOS Image Sensor
R10 Calvin Chao, Honyih Tu, Thomas Wu, Kuo-Yu Chou, Shang-Fu Yeh, and Fu-Lung Hsueh. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC
Statistical Analysis of Random Telegraph Noise in Source Follower Transistors with Various Shapes
R11 Shinya Ichino1, Takezo Mawaki1, Shunichi Wakashima1, Akinobu Teramoto2, Rihito Kuroda1, Phillipe Gaubert2, Tetsuya Goto2, Tomoyuki Suwa2 and Shigetoshi Sugawa1,2. 1Graduate School of Engineering, Tohoku University, Japan; 2New Industry Creation Hatchery Center, Tohoku University, Japan
Impact of Random Telegraph Noise with Various Time Constants and Number of States in CMOS Image Sensors
R12 Rihito Kuroda1,Akinobu Teramoto2 and Shigetoshi Sugawa1,2. 1Graduate School of Engineering, Tohoku University, Japan; 2New Industry Creation Hatchery Center, Tohoku University, Japan
Session 03 Image Sensor Optics
Session chair: Bumsuk Kim (Samsung)
A Spectral Imaging System with an Over 70dB SNR CMOS Image Sensor and Electrically Tunable 10nm FWHM Multi-Bandpass Filter
R13 Yasuyuki Fujihara1, Yusuke Aoyagi1, Satoshi Nasuno1, Shunichi Wakashima1, Rihito Kuroda1, Kohei Terashima1, Takahiro Ishinabe1, Hideo Fujikake1, Kazuhiro Wako2 and Shigetoshi Sugawa1. 1Tohoku University, Japan; 2National Institute of Technology, Sendai College, Japan
A Study on “On Chip Hybrid IRC Technology” to Provide a Thinner Solution for CIS
R14 Li-Kai Lee1, Chih-Chieh Chang1, Yu-Kun Hsiao1, JC_Hsieh1, Kazuaki Hashimoto2, Chien-Hsien Tseng2, Chun-Hao Chuang2,
Wei-Chieh Chiang2. 1VisEra Technologies Company, Taiwan; 2Taiwan Semiconductor Manufacturing Company, Taiwan
Quantum Efficiency Simulation with Boltzmann Transport Equation for Motion Modeling of Individual Particles in Photodiodes
R15 Yuichiro Yamashita1, Masayuki Uchiyama1, Dun-Nian Yaung1, Natsumi Minamitani2 and Yoshinari Kamakura2. 1Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan; 2Osaka University, Japan
Nanostructured Metallic Color Filter for Wide-Range and Multi-Band Image Sensor
R16 Atsushi Ono1, Atsutaka Miyamichi2, Hiroki Kamehama2, Keiichiro Kagawa1, Keita Yasutomi1, and Shoji Kawahito1. 1Research Institute of Electronics, Shizuoka University, Japan; 2 Graduate School of Integrated Science and Technology, Shizuoka University, Japan
Lens Solution for  Intensity Enhancement in Large-Pixel Single-Photon Avalanche Diode
R17 Sheng-Chuan Cheng,Chih-Ching Chang, Kuo-Feng Lin, Chien-Hsiung Huang, Lin-Ya Tseng, Hui-Min Yang, Ken Wu, JC Hsieh. VisEra Technologies Company, Taiwan
Session 04 Poster Presentations
Session chair: Vladimir Koifman (Analog Value)
Jun Ohta (Nara Institute of Science and Technology)
P01 A Proposal of PUF Utilizing Pixel Variations in the CMOS Image Sensor
Shunsuke Okura1,Yuki Nakura2, Masayoshi Shirahata3, Mitsuru Shiozaki3, Takaya Kubota3, Kenichiro Ishikawa1, Isao Takayanagi1, and Takashi Fujino4. 1Brillnics Japan Inc., Japan; 2Graduate School of Science and Technology Ritsumeikan University, Japan; 3Department of Science and Engineering Ritsumeikan University, Japan; 4Research Organization of Science and Engineering Ritsumeikan University, Japan
P02 A Miniature Imaging Device Using a Self-Reset Image Sensor for Hemodynamic Imaging
Kiyotaka Sasagawa, Makito Haruta, Takahiro Yamaguchi, Yasumi Ohta, Toshihiko Noda, Takashi Tokuda, and Jun Ohta. Nara Institute of Science and Technology, Japan
P03 CMOS Terahertz Imaging Pixel with a Small On-Chip Antenna
Shota Hiramatsu1, Kosuke Wakita1, Seokjin Na2, Sayuri Yokoyama2, Masayuki Ikebe2 and Eiichi Sano1. 1Research Center for Integrated Quantum Electronics, Hokkaido University, Japan; 2Graduate School of Information Science and Technology, Hokkaido University, Japan
P04 Investigations on Cryogenic Operation of Pinned Photodiode Pixels
Philippe Martin-Gonthierr, Pierre Magnan, Olivier Marcelot. ISAE-SUPAERO, Université de Toulouse, France
P05 Differential Digital Double Sampling Readout Scheme for a 4T 4-Shared Pixel with Reduced Interconnection
Jeroen Rotte1, Peter Centen1, Juul van den Heijkant1, Adi Birman2, Dmitry Veinger2. 1Grass Valley, The Netherlands; 2TowerJazz, Israel
P06 Column-Parallel Dynamic TDC Reallocation in SPAD Sensor Module Fabricated in 180nm CMOS for Near Infrared Optical Tomography
Scott Lindner1,2, Chao Zhang3, Ivan Michel Antolovic3, Juan Mata Pavia1,2, Martin Wolf1, Edoardo Charbon2,3. 1University Hospital Zurich, Switzerland; 2EPFL, Switzerland; 3TUDelft, The Netherlands
P07 Extending the Dynamic Range of Oversampled Binary SPAD Image Sensors
Neale A.W. Dutton1, Tarek Al Abbas2, Istvan Gyongy2, Robert K. Henderson2. 1STMicroelectronics, UK; 2The University of Edinburgh, UK
P09 Recent Enhancements to Electron Multiplying CCD Image Sensors
Eric G. Stevens, J. Clayhold, H. Doan, R. Fabinski, J. Hynecek, S. Kosman, and C. Parks. ON Semiconductor, USA
P10 8.25µm Pitch 66% Fill Factor Global Shared Well SPAD Image Sensor in 40nm CMOS FSI Technology
T. Al Abbas1, N.A.W. Dutton2, O. Almer1, F.M. Della Rocca1,2, S. Pellegrini2, B. Rae2, D. Golanski3 and R.K. Henderson1. 1The University of Edinburgh, UK; 2STMicroelectronics, UK; 3STMicroelectronics, France
P11 Two-Tier Geiger-Mode Avalanche Detector for Charged Particle Imaging
Lucio Pancheri1, Andrea Ficorella1, Paolo Brogi2,3, Gianmaria Collazuol4, Gian-Franco Dalla Betta1, Pier Simone Marrocchesi2,3, Fabio Morsani3, Lodovico Ratti5, Aurore Savoy-Navarro6. 1DII, Università di Trento and TIFPA-INFN, Italy; 2DFSTA, Università di Siena, Italy; 3NFN Sezione di Pisa, Italy; 4DFA, Università di Padova, and INFN Sezione di Padova, Italy; 5DIII, Università di Pavia, and INFN Sezione di Pavia, Italy; 6Laboratoire APC, University Paris-Diderot/CNRS, France
P12 HAS3: A Radiation Tolerant CMOS Image Sensor for Space Applications

Revised version on 2017-06-09 here

Manuel Innocent, Thomas Cools, Carl Luypaert, Cedric Esquenet, Wiet Vroom, Ishwar Chandra Mudegowdar, Ioannis Thanasopoulos, Patrick Pintens, Joost Decupere, Tomas Geurts. ON Semiconductor, Belgium
P13 Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias

Poster presentation here

Konstantin D. Stefanov, Andrew S. Clarke, James Ivory and Andrew D. Holland. The Open University, UK
P14 Ultrafast Signal Processing Readout Front-End Electronics in CMOS 40 nm Technology for Hybrid Pixel Detectors Operating in Single Photon Counting Mode.
Rafal Kleczek, Pawel Grybos, Robert Szczygiel. AGH University of Science and Technology, Poland
P15 An Imager with Five 20000 x 15 Pixel TDI CCDs for Photogrammetry Applications
Jan Bosiers, Erik-Jan Manoury, Harry van Kuijk, Wilco Klaassens, Holger Stoldt, René Leenen, Herman Peek, Walter de Laat. Teledyne DALSA Professional Imaging, The Netherlands
P16 Charge-Coupled CMOS TDI Imager
Hyun Jung Lee, Paul Donegan, David Atos, Feng-Hua Feng, Eric Fox, Roula Ghannoum, Jason Guan, Willy Maes, David Marchesan, Matt Moser, Nixon O, Mark Ruiter, Tsung-Hsun Tsai, and Laurens Korthout. Teledyne DALSA Inc., Canada
P17 Design and Characterization of a 3.5um Pitch, 8192 Resolution, 5 Spectrum CMOS TDI Image Sensor
Cheng Ma1, Quan Zhou1, Lanlan Liu1, Yang Li1, Adri Mierop2, Agnes Kleimann2, Xinyang Wang1. 1Gpixel Inc., China; 2now with X-FAB Semiconductor Foundries AG, Germany
P18 A 7-band CCD-in-CMOS Multispectral TDI Imager
David San Segundo Bello1, Maarten De Bock1, Pierre Boulenc1, Roeland Vandebriel1, Linkun Wu1,2, Jan Van Olmen1, Vezio Malandrucculo1, Jan Craninckx1, Luc Haspeslagh1, Stefano Guerrieri1, Maarten Rosmeulen1, Jonathan Borremans1. 1imec, Belgium; 2Vrije Universiteit Brussel, Belgium
P19 A 1 × 16 SiPM Array for Automotive 3D Imaging LiDAR Systems

Poster presentation here

Salvatore Gnecchi, Carl Jackson. SensL Technologies, Ireland
P20 A 320×240 10um CAPD ToF Image Sensor with Improved Performance
Ward van der Tempel, Alper Ercan, Thomas Finateu, Korina Fotopoulou, Christian Mourad, Florentina Agavriloaie, Sebastien Resimont, Luca Cutrignelli, Peter Thury, Camilo Ernesto Medina, Sa Xiao, Jean-Luc Loheac, Jernej Perhavc, Tomas Van de Hauwe, Victor Belokonskiy, Luc Bossuyt, Wouter Aerts, Marc Pauwels, Daniel Van Nieuwenhove. Softkinetic, Belgium
P21 Simulating the Performance Required for Multi-Tap Charge Modulation Pixels in Time-Resolved Biomedical Imaging
Keiichiro Kagawa1,2, Nobukazu Teranishi1,3, Keita Yasutomi1, Rolf Saager2, Min-Woong Seo1, Shoji Kawahito1, Anthony Durkin2, and Bruce Tromberg2. 1Shizuoka University, Japan; 2UC Irvine, USA;  3University of Hyogo, Japan
P22 Transfer-Gate Region Optimization and Pinned-Photodiode Shaping for High-Speed TOF Applications
Fabio Acerbi1, Manuel Moreno Garcia1, Gözen Köklü2, Bernhard Büttgen2, Radoslaw Gancarz2, Alice Biber2, Daniel Furrer2, David Stoppa1. 1Fondazione Bruno Kessler, Italy; 2Heptagon Advanced Micro Optics Pte Ltd., Switzerland
P24 Event-Driven Correlated Double Sampling for Pulse-Frequency-Modulation A/D Converters Integrated in Pixel-Parallel Image Sensors
Masahide Goto1, Yuki Honda1, Toshihisa Watabe1, Kei Hagiwara1, Masakazu Nanba1, Yoshinori Iguchi1, Takuya Saraya2, Masaharu Kobayashi2, Eiji Higurashi2, Hiroshi Toshiyoshi2, and Toshiro Hiramoto2. 1NHK Science and Technology Research Laboratories, Japan; 2The University of Tokyo, Japan
P25 Image Sensor With Multiple Sub-radix-2 SAR ADC Calibration and Residual Column Pattern Noise Correction
Daniel Van Blerkom, Steve Huang, Barmak Mansoorian. Forza Silicon Corporation, USA
P26 A High-Speed Imager with Low-Power PTC-Inspired Column-Multiplexed Readout
Maarten De Bock, Mingxu Liu, Peter Van Wesemael, Annachiara Spagnolo, Jan Craninckx, Koen De Munck, Celso Cavaco, Luc Haspeslagh, Stefano Guerrieri, Maarten Rosmeulen, Jonathan Borremans. imec, Belgium
P27 A Small Pixel High Performance Full Frame HDR Sensor
Salman Kabir, Michael Guidash, Thomas Vogelsang, Craig Smith, Alex Schneider, Jay Endsley. Rambus Inc., USA
P28 QLOG – Logarithmic CMOS Pixel with Single Electron Detection Capability
Yang Ni. New Imaging Technologies, France
P29 Back Side Illuminated High Dynamic Range 3.0μm Pixel Featuring Vertical p-n Junction Capacitance in A Deep Pinned Photodiode
K. Mori, S.Okura, T. Hasegawa, S. Tanaka and I.Takayanagi. Brillnics Japan Inc., Japan
P30 How to Hand-Calculate MTF in Front-Side and Backside Illuminated Image Sensors

Poster presentation here

Bart Dierickx1, Jean Bourgain2, Bert Luyssaert1. 1Caeleste, Belgium; 2Institute for Advanced Study, USA
P31 A Study on Photon Effect to Image Plane
Kangbong Seo, Sungryong Lee, Peter Ahn, Dohwan Kim and Kwangbo Cho. SK Hynix semiconductor Inc., Korea
P32 Photodiode Barrier Induced Lag Characterization Using a New Lag versus Idle Time Methodology
W. Gao, M. Guidash, N. Li, R. Ispasoiu, P. R. Ailuri, N. Palaniappan, D. Tekleab, M. Rahman. ON Semiconductor, CA, USA
P33 A CMOS Front-end for GaN-based UV Imaging
Preethi Padmanabhan1, Bruce Hancock2, Shouleh Nikzad2, L. Douglas Bell2, Kees Kroep3, Edoardo Charbon1,3. 1AQUA Laboratory, EPFL, Switzerland; 2Jet Propulsion Laboratory, California Institute of Technology, USA; 3AQUA Laboratory, TU Delft, The Netherlands
P34 Ultraviolet and Visible Spectral Imaging of Hydrogen Flames Using an Organic Photoconductive Film CMOS Imager
T. Okino, S. Yamahira, S. Yamada, Y. Hirose, A. Odagawa, Y. Kato and T. Tanaka. Panasonic Corporation,  Japan
P35 Low Dark Current UV-VIS Planar- electrode Perovskite CMOS Image Sensor
Yan-Rung Lin1, Pei-Wen Yen1, Sheng-Min Yu2, Shiu-Cheng Lou1, Kai-Ping Chuang1, Bor-Nian Chuang1, Yen-Chih Chiou3, Chih-Cheng Hsieh3, Cheng-Hung Hou4, Feng-Yu Tsai4. Industrial Technology Research Institute, 1Center for Measurement Standards, 2Material and Chemical Research Laboratories, Taiwan; 3National Tsing Hua University, Taiwan; 4National Taiwan University, Taiwan
P38 A 5 Million fps Global Shutter Megapixel Sensor with Shutter Efficiency in Excess of 120 dB
S. Benhammadi1, B. Marsh1, K. Taylor2, W. Chan2, A. Birman3, A. Lahav3, A. Fenigstein3, R. Turchetta4. 1STFC Rutherford Appleton Laboratory, UK; 2Specialised Imaging, UK; 3TowerJazz Semiconductor Ltd., Israel; 4WegaPixel SL, Spain
P39 A 10 μm pitch, SXGA Multifunctional IRFPA ROIC with In-Pixel Laser Event Detection and High Dynamic Range Imaging
C.G. Jakobson, I. Pivnik, R. Dobromislin, G. Zohar, O. Cohen, Y. Chaham, N. Shiloah, R. Talmor, E. Ilan, I. Nevo, W. Freiman, N. Ben Ari, R. Fruhi, T. Shapira, R. Fraenkel. SCD Semiconductor Devices, Israel
P40 A 75.6μVrms Read Noise CMOS Image Sensor with Pixel Noise Reduction Using Noise-Coupled Amplifier
Chanmin Park1, Injun Park1, Woo Jin Jo1, Jimin Cheon2 and Youngcheol Chae1. 1Yonsei University, Korea; 2Kumoh National Institute of Technology, Korea
P41 A New Radiation Hardened CMOS Image Sensor for Nuclear Plant
T. Watanabe1, T. Takeuchi2, O. Ozawa3, H. Komanome3, T. Akahori1, K. Tsuchiya2. 1Brookman Technology, Inc., Japan; 2Japan Atomic Energy Agency, Japan; 3Ikegami Tsushinki Co., Ltd., Japan
P42 Optical Characteristics of Multi-Storied Photodiode CMOS Image Sensor with 3D Stacking Technology
Y. Takemoto, M. Tsukimura, N. Takazawa, H. Kato, S. Suzuki, J. Aoki, T. Kondo, H. Saito, Y. Gomi, S. Matsuda, and Y. Tadaki. Olympus Corporation, Japan
P43 Development of Vertical Thin Poly-Si Channel Transfer Gate Structured Pixel for 3D CIS Applications
Young-Jun Kwon1, Sung-Kun Park1, Sung-Wook Cho1, Kyoung-In Lee1, Sung-Man Kim1, Chris Hong1, In-Wook Cho1, Jae-Hyun Park2, and Kyung-Dong Yoo2. 1SK Hynix, Korea; 2Hanyang University, Korea
P44 Three-Transistor-Pixel CMOS Image Sensor for 8K Super Hi-Vision Stacked Sensor with Highly Sensitive Photoconversion Layer
Toshihisa Watabe, Yuki Honda, Masakazu Nanba, Hiroshi Ohtake, and Misao Kubota. NHK Science and Technology Research Laboratories, Japan
P45 Fresnel Zone Plates : Plasmonics Filtering for SPADS Sensors
Flavien Hirigoyen. STMicroelectronics, France
Session 05 Photon Counting and Photon-based Imaging
Session chair: Bart Dierickx (Caeleste)
Neale A.W. Dutton (STMicroelectronics)
Experimental Comparison of MOSFET and JFET 1.1mm Pitch Jots in 1Mjot Stacked BSI Quanta Image Sensors

Presentation slides here

R18 Jiaju Ma1, Saleh Masoodian1, Tzu-Jui Wang2 and Eric R. Fossum1. 1Thayer School of Engineering at Dartmouth College, USA; 2Taiwan Semiconductor Manufacturing Company, Taiwan
A 1Mjot 1040fps 0.22e-rms Stacked BSI Quanta Image Sensor with Cluster‐Parallel Readout

Presentation slides here

R19 Saleh Masoodian1, Jiaju Ma1, Dakota Starkey1, Yuichiro Yamashita2, and Eric R. Fossum1. 1Thayer School of Engineering, Dartmouth College, USA; 2Taiwan Semiconductor Manufacturing Company (TSMC), Taiwan
A 512×512 SPAD Image Sensor with Built-In Gating for Phasor Based Real-Time siFLIM

Presentation slides here

R20 Arin Can Ulku1, Claudio Bruschini1, Xavier Michalet2, Shimon Weiss2, Edoardo Charbon1. 1AQUA laboratory, EPFL, Switzerland; 2University of California at Los Angeles, USA
3 µm Pitch, 1 µm Active Diameter SPAD Arrays in 130nm CMOS Imaging Technology
R21 Ziyang You1, Luca Parmesan1*, Sara Pellegrini2, Robert K. Henderson1. 1The University of Edinburgh, UK; 2STMicroelectronics, UK; *now with Fondazione Bruno Kessler, Italy
Object Tracking and Reconstruction with a Quanta Image Sensor
R22 Istvan Gyongy1, Tarek Al Abbas1, Neale A.W. Dutton2, Robert K. Henderson1. 1The University of Edinburgh, U.K.; 2STMicroelectronics, U.K.
A Flexible 32×32 Dual-Side Single-Photon Image Sensor
R23 Pengfei Sun1,2, Junjie Weng1, Ryoichi Ishihara1 and Edoardo Charbon1. 1Delft University of Technology, The Netherlands; 2X-FAB Semiconductor Foundries AG, Germany
Session 06 Invited Presentation and Range Imaging
Session chair: David Stoppa (Fondazione Bruno Kessler)
Gennadiy Agranov (Apple)
Invited Presentation-I
I1 Sensors for Future AR/VR Applications
Chiao Liu, Michael Hall, Renzo De Nardi, Nicholas Trail, Richard Newcombe. Oculus Research, Facebook Inc., USA
A High-Resolution Time-of-Flight Range Image Sensor with a 3-Tap Lateral Electric Field Charge Modulator

Revised version per 2017-06-05 here

R24 Keita Yasutomi,  Yuki Morikawa, Shoma Imanishi, Taishi Takasawa, Keiichiro Kagawa, Shoji Kawahito. Shizuoka University, Japan
Mutually Coupled Ring Oscillators for Large Array Time-of-Flight Imagers
R25 Augusto Ronchini Ximenes1, Preethi Padmanabhan2, and Edoardo Charbon1,2. 1Delft University of Technology, The Netherlands; 2AQUA Laboratory, EPFL, Switzerland
3D Imaging with CMOS Single-Photon Detector Arrays for Space Applications: Ground-Based Measurements and Irradiation Tests
R26 Matteo Perenzoni1, Daniele Perenzoni1, David Stoppa1, Alexandre Pollini2, Jacques Haesler2, Christophe Pache2. 1Fondazione Bruno Kessler, Italy; 2CSEM, Switzerland
Indirect ToF Pixel Integrating Fast Buried-Channel Transfer Gates and Gradual Epitaxy, and Enabling CDS
R27 Boris Rodrigues1,3, Marie Guillon2, Nicolas Billon-Pierron2, Jean-Baptiste Mancini2, Olivier Saxod2, Benoit Giffard2, Yvon Cazaux2,
Pierre Malinge3, Patrice Waltz3, Auguste Ngoua3, Yannick Kerleguer3, Alisée Taluy3, Sarah Kuster3, Sylvain Joblot3, François Roy3, Guo-Neng Lu1. 1Univ. Claude Bernard Lyon 1, France; 2Univ. Grenoble Alpes, France; 3STMicroelectronics, France
A Low-Power Low-Cost High-Speed 2D/3D Camera for Virtual Reality Headsets, Mobile Devices and Automobiles
R28 Yibing M. Wang1,3, Ilia Ovsiannikov1,3, Jang-Woo You3, Peter Deane2, Dirk Smits2, Yong-Hwa Park3*, Maarten Niesten2, Sungwoo Hwang 3, Chilhee Chung3. 1Samsung Semiconductor, Inc., USA; 2Samsung Strategy and Innovation Center, USA; 3Samsung Advanced Institute of Technology, Korea; *Now with KAIST
Session 07 High Dynamic Range
Session chair: Johannes Solhusvik (OmniVision Technologies)
Orly Yadid-Pecht (University of Calgary)
An 87dB Single Exposure Dynamic Range CMOS Image Sensor  with a 3.0µm Triple Conversion Gain Pixel
R29 I. Takayanagi, N. Yoshimura, K. Mori, S. Tanaka, S. Matsuo, H. Abe, N. Yasuda, K. Ishikawa, S. Okura, S. Ohsawa and T. Otaka. Brillnics Japan Inc., Japan
A Native HDR 115dB 3.2µm BSI Pixel Using Electron and Hole Collection
R30 Frédéric Lalanne, Pierre Malinge, Didier Hérault and Clémence Jamin-Mornet. STMicroelectronics, France
A 98dB Linear Dynamic Range, High Speed CMOS Image Sensor
R31 Tomas Geurts, Bart Cremers, Manuel Innocent, Wiet Vroom, Cedric Esquenet, Thomas Cools, John Compiet, Burak Okcan, Genis Chapinal, Carl Luypaert, Patrick Pintens, Roel Aerts. ON Semiconductor, Belgium
A Method to Increase DR Using Column-Level Automatic Gain Selection
R32 Gaozhan Cai1, Wei Wang1, Bert Luyssaert1, Bart Dierickx1, Gerlinde Ruttens1, Bert Uwaerts1, Dirk Uwaerts1, Jente Basteleus1, Jens De Vroe1, Walter Verbruggen1, Peng Gao1, Donal Denvir2 , Philip Steen2. 1Caeleste CVBA, Belgium; 2Andor Technology Ltd., UK
A 0.5erms Temporal-Noise CMOS Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain
R33 Xiaoliang Ge1, Albert Theuwissen1,2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging, Belgium
140dB Dynamic Range Sub-electron Noise Floor Image Sensor
R34 Sergey Velichko1, Scott Johnson1, Dan Pates1, Chris Silsby2, Cornelis Hoekstra2, Ray Mentzer2, Jeff Beck2. 1ON Semiconductor, ID, USA; 2ON Semiconductor, OR, USA
A 1392×976 2.8μm 120dB CIS with Per-Pixel Controlled Conversion Gain

Presentation slides here

R35 Johannes Solhusvik1, Sam Hu2, Robert Johansson1, Zhiqiang Lin2, Siguang Ma2, Keiji Mabuchi2, Sohei Manabe2, Duli Mao2, Bill Phan2, Howard Rhodes2, Charles Shan2, Eric Webster2, and Trygve Willassen1. 1OmniVision Technologies, Norway; 2OmniVision Technologies, USA
Session 08 Invited Presentation and High Speed
Session chair: Shigetoshi Sugawa (Tohoku University)
Michael Guidash (RM Guidash Consulting)
Invited Presentation-II
I2 Extreme Imaging and Beyond
Cheng Lei1, Yasuyuki Ozeki2, and Keisuke Goda1,3,4. 1Department of Chemistry, University of Tokyo, Japan; 2Department of Electrical Engineering and Information Systems, University of Tokyo, Japan; 3University of California, Los Angeles, USA; 4Japan Science and Technology Agency, Japan
The Temporal Resolution Limit of the Silicon Image Sensors
R36 Takeharu Goji Etoh1,2, Anh Quang Nguyen1, Yoshinari Kamakura2, Kazuhiro Shimonomura1, Yen Le Thi2 and Nobuya Mori2. 1Ritsumeikan University, Japan; 2Osaka University, Japan
10Mfps 960 Frames Video Capturing Using a UHS Global Shutter CMOS Image Sensor with High Density Analog Memories
R37 Manabu Suzuki1, Masashi Suzuki1, Rihito Kuroda1, Yuki Kumagai2, Akira Chiba2, Noriyuki Miura2, Naoya Kuriyama2 and Shigetoshi Sugawa1. 1Tohoku University, Japan; 2LAPIS Semiconductor Miyagi Co., Ltd., Japan
In-Pixel Storage Techniques for CMOS Burst-Mode Ultra-High-Speed Imagers
R38 L. Wu1,2, D. San Segundo Bello2, P. Coppejans2, A. Süss2, M. Rosmeulen2,
J. Craninckx2, P. Wambacq1,2, J. Borremans2. 1Vrije Universiteit Brussel, Belgium; 2imec, Belgium
A 0.64 microseconds Row-Time CMOS Image Sensor using Gm-Enhanced Repeater Source Follower Buffer and Column Parallel Pipelined ADC
R39 Toshinori Otaka, Shintaro Maekawa, Hiroyuki Yamaguchi and Takayuki Hamamoto. Tokyo University of Science, Japan
Single Photon Counting Hybrid Pixel Detectors with 85 ns Dead Time, 70 kfps Frame Rate and TSV Option.
R40 P. Maj1, E. Dufresne2, P. Grybos1, K. Kasinski1, P. Kmon1, A. Koziol1, S. Narayanan2, A. Sandy2, R. Szczygiel1, Q. Zhang2. 1AGH University of Science and Technology, Poland; 2Argonne National Laboratory, USA
Session 09 ADC
Session chair: Guy Meynants (AMS)
A SAR-ΔΣ ADC with Dynamic Integrator for Low-Noise CMOS Image Sensors

Presentation slides here

R41 Akira Matsuzawa, and Masaya Miyahara. Tokyo Institute of Technology, Japan
A 12-bit Column-Parallel Flash TDC-Interpolated Ramp ADC with Online Digital Delay Element Correction
R42 Deyan Levski1, Martin Wäny2, Bhaskay Choubey1. 1University of Oxford, UK; 2Austria Microsystems AG., Portugal
A 12-bit, 0.9-μs Single-Slope ADC for Embedded TDI-CCD and CMOS Line-Scan Image Sensor
R43 Tsung-Hsun Tsai, Paul Donegan, David Atos, Feng-Hua Feng, Eric Fox, Roula Ghannoum, Jason Guan, Tihomir Hodalin, Hyun Jung Lee, Willy Maes, David Marchesan, Brad Moon, Matt Moser, Mark Ruiter, and Laurens Korthout. Teledyne DALSA Inc., Canada
A Highly Linear CMOS Image Sensor with a Digitally Assisted Linearity-Calibration Method

Revised version on 2017-06-12 here

R44 Fei Wang1, Liqiang Han2, Albert J. P. Theuwissen1,3. 1Delft University of Technology, The Netherlands; 2Tianjin University, China; 3Harvest Imaging, Belgium
A 5-Megapixel 100-Frames-per-second 0.5erms Low Noise CMOS Image Sensor With Column-Parallel Two-Stage Oversampled Analog-to-Digital Converter
R45 J. A. Segovia1, F. Medeiro1,2, A. González1, A. Villegas1, A. Rodríguez-Vázquez1,2. 1Teledyne AnaFocus, Spain; 2Inst. of Microelectronics of Seville (Univ. de Sevilla & CSIC), Spain
12-bit Column-Parallel Single-Slope ADCs with Operation-Period-Reduced Time-to-Digital Converters for CMOS Image Sensors
R46 Yoshio Hagihara, Yusaku Koyama, Susumu Yamazaki, Takanori Tanaka, Atsuko Kume, Yosuke Kusano, Mai Arita, Masashi Saito, and Yoshihisa Okada. Olympus Corporation, Japan
Session 10 Invited Presentation and Specialty Image Sensors
Session chair: Edoardo Charbon (Delft Univ. of Technology)
Pierre Magnan (ISAE)
Invited Presentation-III
I3 8K Imaging Systems and Their Medical Applications
—World’s First 8K Rigid Endoscope Camera—
Kenkichi Tanioka, Medical Imaging Consortium, Japan
UV/Optical Photon Counting and Large Format Imaging Detectors from CubeSats, SmallSats to Large Aperture Space Telescopes & Imaging Spectrometers
R47 Shouleh Nikzad1, April D. Jewel1, Alex G. Carver1, John J. Hennessy1, Michael E. Hoenk1, Sam Cheng1, Timothy M. Goodsall1, Gillian Kyne2, Erika Hamden2, and Todd J. Jones1. 1Jet Propulsion Laboratory, California Institute of Technology, USA; 2California Institute of Technology, USA
CMOS Image Sensor Architecture for Primal-Dual Coding
R48 Navid Sarhangnejad, Hyunjoong Lee, Nikola Katic, Matthew O’Toole, Kiriakos Kutulakos, Roman Genov. University of Toronto, Canada
A 1ms High-Speed Vision Chip with 3D-Stacked 140GOPS Column-Parallel PEs for Diverse Sensing Applications
R49 Atsushi Nose1, Tomohiro Yamazaki1, Hironobu Katayama1, Shuji Uehara1, Masatsugu Kobayashi1, Sayaka Shida1, Masaki Odahara2, Kenichi Takamiya2, Yasuaki Hisamatsu2, Shizunori Matsumoto2, Leo Miyashita3, Yoshihiro Watanabe3, Takashi Izawa1, Yoshinori Muramatsu1, Yoshikazu Nitta1, Masatoshi Ishikawa3. 1Sony Semiconductor Solutions, Japan; 2Sony LSI Design, Japan; 3The University of Tokyo, Japan
High Speed Backside Illuminated TDI CCD-in-CMOS Sensor

Presentation slides here

R50 Pierre Boulenc1, Jo Robbelein1, Linkun Wu1,2, Vasyl Motsnyi1, Luc Haspeslagh1, Stefano Guerrieri1, Jonathan Borremans1, Maarten Rosmeulen1. 1imec, Belgium; 2Vrije Universiteit Brussel, Belgium
Session 11 Invited Presentation and Non-Visible Imaging
Session chair: Shouleh Nikzad (Jet Propulsion Laboratory)
Vyshnavi Suntharalingam (MIT)
Invited Presentation-IV
I4 Current Status of CCDs for Astronomical Observations and the Development of a Large Mosaic Camera
Satoshi Miyazaki. The National Astronomical Observatory of Japan, Japan
Event-Driven Dual-Gain Fully-Depleted SOI Based X-Ray Detector for High Energy Particle Imaging
R51 Sumeet Shrestha1, Hiroki Kamehama1, Keita Yasutomi1, Keiichiro Kagawa1, Nobukazu Teranishi1, Ayaki Takeda2, Takeshi Go Tsuru2, Yasuo Arai3 and Shoji Kawahito1. 1Shizuoka University, Japan; 2Kyoto University, Japan; 3High Energy Accelerator Research Organization (KEK), Japan
Radiation-hard, Nanosecond-gated CMOS Imaging Detectors
R52 Michael E. Hoenk1, April D. Jewell1, Shouleh Nikzad1, Doug Trotter2, Quinn Looker2, Gideon Robertson2. 1Jet Propulsion Laboratory, California Institute of Technology, USA; 2Sandia National Laboratories, USA
A QuantumFilm Based QuadVGA 1.5µm Pixel Image Sensor with Over 40% QE at 940 nm for Actively Illuminated Applications.
R53 Lionel Barrow, Nikolai Bock, Aurelien Bouvier, Dario Clocchiatti, Jian Feng, Naveen Kolli, Andras Pattantyus, Vitanshu Sharma, Tzi-Hsiung Shu, Emanuele Mandelli. InVisage Technologies, USA
Monolithic Near Infrared Image Sensors Enabled by Quantum Dot Photodetector

Presentation slides here

R54 Pawel E. Malinowski1, Epimitheas Georgitzikis1,2, Jorick Maes3,4,Mehedi Mamun1,4, Oscar Enzing1, Fortunato Frazzica1,5, Jan Van Olmen1, Piet De Moor1, Paul Heremans1,2, Zeger Hens3,4, and David Cheyns1. 1IMEC, Belgium; 2KU Leuven, Belgium; 3Physics and Chemistry of Nanostructures, Ghent University, Belgium; 4Center for Nano- and Biophotonics, Ghent University, Belgium; 5Vrije Universiteit Brussel, Belgium
Challenges in Improving the Performances of Radiation Hard CMOS Image Sensors for Gigarad (Grad) Total Ionizing Dose
R55 Vincent Goiffon1, Serena Rizzolo1, Franck Corbière1, Sébastien Rolando1, Aziouz Chabane1, Marius Sergent1, Philippe Paillet2, Sylvain Girard3, Magali Estribeau1, Pierre Magnan1, Marco Van Uffelen4, Laura Mont Casellas4, Marc Gaillardin2, Robin Scott5 and Wouter De Cock6. 1ISAE-SUPAERO, France; 2CEA DAM-DIF, France; 3Université de Saint-Etienne, France; 4Fusion for Energy, Spain; 5Oxford Technologies Ltd., UK; 6SCK-CEN, Belgium
Session 12 Global Shutter
Session chair: Eric Stevens (ON Semiconductor)
Daniel Van Blerkom (Forza Silicon)
Cross Talk, Quantum Efficiency, and Parasitic Light Sensitivity Comparison for Different Near Infra-Red Enhanced sub 3um Global Shutter Pixel Architectures
R56 Assaf Lahav1, Dmitry Veinger1 Adi Birman1, Masakatsu Suzuki2, Tatsuya Hirata2, Keishi Tachikawa2, Masafumi Tsutsui2, Toshifumi Yokoyama2, Yoshiaki Nishi2 and Ikuo Mizuno2. 1TowerJazz Semiconductors, Israel; 2Towerjazz Panasonic semiconductor, Japan
A High Optical Performance 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure

Revised version on 2017-06-05 here

R57 Hiroshi Sekine, Masahiro Kobayashi, Yusuke Onuki, Kazunari Kawabata, Toshiki Tsuboi, Yasushi Matsuno, Hidekazu Takahashi, Shunsuke Inoue, and Takeshi Ichikawa. Canon Inc., Japan
Design of Double Micro Lens Structure for 2.8um Global Shutter Pixel
R58 Toshifumi Yokoyama1, Masakatsu Suzuki1, Yoshiaki Nishi1, Ikuo Mizuno1 and Assaf Lahav2. 1Towerjazz Panasonic semiconductor Co,. Ltd., Japan; 2TowerJazz SemiConductors, Israel
A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, 7 erms Read Noise, 80 μV/e CG and >80 % VIS-QE
R59 Andreas Süss1, Linkun Wu2,1, Jean-Luc Bacq1, Annachiara Spagnolo1, Philippe Coppejans1, Vasyl Motsnyi1, Luc Haspeslagh1, Jonathan Borremans1, Maarten Rosmeulen1. 1IMEC, Belgium; 2Vrije Universiteit Brussel, Belgium
A Global Shutter, Backside Illumination CMOS Image Sensor for Satellite Navigation
R60 David Price1, Rick Jerome1, Akihiro Hasegawa1, Jeff Gambino1, Rusty Winzenread2, Kyle Thomas2, Andrew Piner2, Michael Wu3, Patti Guidash4, Tom Carducci4, Tom Frank4, Bill Desjardin4, Rich Brolly4, Thad Smith5, Brandon Riebeek5, Eddie Glines5, Gerald Heim6, Tom Ebben6, Rino Marinelli7, Onorato Di Cola7, Giovanni De Amicis7. 1ON Semiconductor, OR, USA; 2ON Semiconductor, CA, USA; 3ON Semiconductor, AZ, USA; 4ON Semiconductor, NY, USA; 5ON Semiconductor, ID, USA; 6Ball Aerospace, USA; 7LFoundry, Italy
A 47 MPixel 36.4 x 27.6 mm2 30 fps Global Shutter Image Sensor
R61 Guy Meynants, Bram Wolfs, Jan Bogaerts, Peishuo Li, Zhisheng Li, Yongjia Li, Ybe Creten, Koen Ruythooren, Pascale Francis, Raf Lafaille, Pieter De Wit, Gerd Beeckman, Jan Martin Kopfer. AMS, Belgium
Closing Remarks