WALTER KOSONOCKY AWARD
Recipients
The IISS Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997.
Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop. The award committee solicits nominations biennially. The award is announced and presented at the Workshop. New! Nomination form for 2025 is here.
| Year/Org. | Recipients | Recipients | Paper |
| 2023 Canon Inc. | K. MorimotoJ. IwataM. ShinoharaH. Sekine
A. Abdelghafar H. Tsuchiya Y. Kuroda K. Tojima W. Endo Y. Maehashi Y. Ota T. Sasago S. Maekawa |
S. HikosakaT. KanouA. KatoT. Tezuka
S. Yoshizaki T. Ogawa K. Uehira A. Ehara F. Inui Y. Matsuno K. Sakurai T. Ichikawa |
3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 20.2.1-20.2.4 |
| 2021 STMicroelectronics, IMEP-LaHC, Univ. Grenoble Alpes, LNL, Univ. Claude Bernard Lyon, LETI-CEA Tech |
Francois RoyAndrej SulerThomas DalleauRomain Duru Daniel Jihane |
Yvon CazauxCatherine ChatonLaurent MontesPanagiota Morfouli Guo-Neng |
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor ApplicationsMDPI Sensors, Vol.20, No3. Article No.727, pp.1-8, Jan 2020. |
| 2019 Sony | Sozo YokogawaItaru OshiyamaHarumi IkedaYoshiki Ebiko Tomoyuki |
Suguru SaitoTakashi OinoueYoshiya HagimotoHayato Iwamoto |
IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixelsScientific Reports, Vol. 7, Article No. 3832, pp. 1-9, June 2017. |
| 2017 Microsoft | Cyrus S. BamjiPatrick O’ConnorTamer ElkhatibSwati Mehta Barry Lawrence A. Dane |
Onur Can AkkayaAndy DanielAndrew D. PayneTravis Perry Mike Vei-Han |
A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADCIEEE JSSC, Vol. 50, No. 1, pp. 303-318, January 2015. |
| 2015 Sony | Shunichi SukegawaTsutomu NakajimaKen KosekiTsutomu Haruta Koji Keishi Takashi Teruo |
Taku UmebayashiHiroshi KawanobeIsao HirotaMasanori Kasai Toshifumi Hiroshi Yoshikazu Noriyuki |
A 1/4-inch 8Mpixel Back-Illuminated Stacked CMOS Image SensorISSCC Dig. Tech. Papers, pp. 484 – 485, Feb. 2013. |
| 2013 NHKShizuoka University | Kazuya KitamuraToshihisa WatabeTakehide SawamotoTomohiko Kosugi Tomoyuki Tetsuya Keigo |
Takashi WatanabeHiroshi ShimamotoHiroshi OhtakeSatoshi Aoyama Shoji Norifumi |
A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital ConvertersIEEE Transactions On Electron Devices, 59(12), December 2012, pp. 3426-3433. |
| 2011 Sony | Hayato WakabayashiKeiji YamaguchiMasafumi OkanoSouichiro Kuramochi Oichi Seijiro Masamichi Masahiro Masaru Yuuki |
Takeshi ShikanaiKen KosekiKeiji MabuchiYasushi Maruyama Kentaro Eiji Tomoyuki Masanori Tetsuo |
A 1/2.3-inch 10.3Mpixel 50 frame/s Back-Illuminated CMOS Image SensorProc. 2010 International Solid-State Circuits Conference (ISSCC), pp. 410-411, San Francisco, CA USA February 2010. |
| 2009 Eastman Kodak |
Eric StevensHung DoanJeffery KyanGang Shi Jian |
Hirofumi KomoriHiroaki FujitaChristopher ParksCristian Tivarus |
Low Crosstalk and Low Dark Current CMOS Image Sensor Technology Using a Hole-Based DetectorProc. International Solid-State Circuits Conference (ISSCC), pp.59-61 San Francisco, California USA February 2008. |
| 2007 Sony | Satoshi YoshiharaYoshikazu NittaMasaru KikuchiKen Koseki Yoshiharu Yoshiaki Souichiro Hayato Masafumi |
Hiromi KuriyamaJunichi InutsukaAkari TajimaTadashi Nakajima Yoshiharu Fumihiko Yasuo Shinya Tetsuo |
A 1/1.8” 6.4 Mpixel 60 frames/s CMOS image sensor with seamless mode changeIEEE J. of Solid-State Circuits, vol. 41(12) December 2006 pp. 2998-3006 |
| 2005 Micron Technology | Alex KrymskiNail Khaliullin |
Howard Rhodes |
A 2 Electron noise, 1.3. Megapixel CMOS SensorProc. 2003 IEEE Workshop on CCDs and Advanced Image Sensors, May 15-17, 2003 Bavaria, Germany |
| 2003 Texas Instruments | Jaroslav Hynecek |
Impactron – A New Solid State Image IntensifierIEEE Trans. Electron Devices, vol. 48(10) Oct. 2001 pp. 2238-2241 | |
| 2001 Fujifilm | Tetsuo YamadaKatsumi IkedaYong-Gwan KimHideki Wakoh Tetsuo Tomohiro |
Kazuki OgawaEiichi OkamotoKazuyuki MasukaneKazuya Oda Masafumi |
A Progressive Scan CCD Image Sensor for DSC ApplicationsIEEE J. Solid-State Circuits, vol. 35(12) Dec. 2000 pp. 2044-2054 |
| 1999 Philips | Jan BosiersAgnes KleimannArjen Vander SijdeLaurens Korthout Daniel |
Herman PeekEdwin RoksAnco HeringaFrans Vledder Peter |
A 2/3” 2M pixel progressive scan FT-CCD for digital still camera applicationsProc. 1998 IEEE International Electron Devices Meeting, pp. 37-40 |