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WALTER KOSONOCKY AWARD

Recipients

The IISS Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997.

Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop. The award committee solicits nominations biennially. The award is announced and presented at the Workshop.

Year/Org. Recipients Recipients Paper
2025 Sony Takafumi Takatsuka,
Jun Ogi,
Yasuji Ikeda,
Kazuki Hizu,
Yutaka Inaoka,
Shunsuke Sakama,
Iori Watanabe,
Tatsuya Ishikawa,
Shohei Shimada,		 Junki Suzuki,
Hidenori Maeda,
Kenji Toshima,
Yusuke Nonaka,
Akifumi Yamamura,
Hideki Ozawa,
Fumihiko Koga,
Yusuke Oike		 A 3.36-µm-Pitch SPAD Photon-Counting Image Sensor Using a Clustered Multi-Cycle Clocked Recharging Technique With an Intermediate Most-Significant-Bit Readout
IEEE Journal of Solid-State Circuits, vol. 59, no. 4, pp. 1137-1145, April 2024, doi: 10.1109/JSSC.2024.3360150.
2023 Canon Inc. K. Morimoto,
J. Iwata,
M. Shinohara,
H. Sekine,
A. Abdelghafar,
H. Tsuchiya,
Y. Kuroda,
K. Tojima,
W. Endo,
Y. Maehashi,
Y. Ota,
T. Sasag
S. Maekawa,		 S. Hikosaka,
T. Kanou,
A. Kato,
T. Tezuka,
S. Yoshizaki,
T. Ogawa,
K. Uehira,
A. Ehara,
F. Inui,
Y. Matsuno,
K. Sakurai,
T. Ichikawa		 3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing
2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 20.2.1-20.2.4
2021 STMicroelectronics,
IMEP-LaHC, Univ. Grenoble Alpes,
INL,Univ. Claude Bernard Lyon,
LETI-CEA Tech		 Francois Roy,
Andrej Suler,
Thomas Dalleau,
Romain Duru,
Daniel Benoit,
Jihane Arnaud,		 Yvon Cazaux,
Catherine Chaton,
Laurent Montes,
Panagiota Morfouli,
Guo-Neng Lu		 Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
MDPI Sensors, Vol.20, No3. Article No.727, pp.1-8, Jan 2020.
2019 Sony Sozo Yokogawa,
Itaru Oshiyama,
Harumi Ikeda,
Yoshiki Ebiko,
Tomoyuki Hirano,		 Suguru Saito,
Takashi Oinoue,
Yoshiya Hagimoto,
Hayato Iwamoto		 IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
Scientific Reports, Vol. 7, Article No. 3832, pp. 1-9, June 2017.
2017 Microsoft Cyrus S. Bamji,
Patrick O’Connor,
Tamer Elkhatib,
Swati Mehta,
Barry Thompson, Lawrence A.
Prather,
Dane Snow,		 Onur Can Akkaya,
Andy Daniel,
Andrew D. Payne,
Travis Perry,
Mike Fenton,
Vei-Han Chan		 A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADC
IEEE JSSC, Vol. 50, No. 1, pp. 303-318, January 2015.
2015 Sony Shunichi Sukegawa, Tsutomu Nakajima,
Ken Koseki,
Tsutomu Haruta,
Koji Fukumoto,
Keishi Inoue,
Takashi Nagano,
Teruo Hirayama,		 Taku Umebayashi,
Hiroshi Kawanobe,
Isao Hirota,
Masanori Kasai,
Toshifumi Wakano,
Hiroshi Takahashi,
Yoshikazu Nitta,
Noriyuki Fukushima		 A 1/4-inch 8Mpixel Back-Illuminated Stacked CMOS Image Sensor
ISSCC Dig. Tech. Papers, pp. 484 – 485, Feb. 2013.
2013 NHK
Shizuoka University		 Kazuya Kitamura,
Toshihisa Watabe,
Takehide Sawamoto,
Tomohiko Kosugi,
Tomoyuki Akahori,
Tetsuya Iida,
Keigo Isobe		 Takashi Watanabe
Hiroshi Shimamoto, Hiroshi Ohtake, Satoshi Aoyama, Shoji Kawahito,
Norifumi Egami		 A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters
IEEE Transactions On Electron Devices, 59(12), December 2012, pp. 3426-3433.
2011 Sony Hayato Wakabayashi, Keiji Yamaguchi,
Masafumi Okano, Souichiro Kuramochi,
Oichi Kumagai,
Seijiro Sakane,
Masamichi Ito, Masahiro Hatano, Masaru Kikuchi, Yuuki Yamagata		 Takeshi Shikana,
Ken Koseki,
Keiji Mabuchi,
Yasushi Maruyama,
Kentaro Akiyama,
Eiji Miyata,
Tomoyuki Honda,
Masanori Ohashi,
Tetsuo Nomoto		 A 1/2.3-inch 10.3Mpixel 50 frame/s Back-Illuminated CMOS Image Sensor
Proc. 2010 International Solid-State Circuits Conference (ISSCC), pp. 410-411, San Francisco, CA USA February 2010.
2009 Eastman
Kodak		 Eric Stevens,
Hung Doan,
Jeffery Kyan,
Gang Shi,
Jian Wu,		 Hirofumi Komori,
Hiroaki Fujita,
Christopher Parks,
Cristian Tivarus		 Low Crosstalk and Low Dark Current CMOS Image Sensor Technology Using a Hole-Based Detector
Proc. International Solid-State Circuits Conference (ISSCC), pp.59-61 San Francisco, California USA February 2008.
2007 Sony Satoshi Yoshihara,
Yoshikazu Nitta,
Masaru Kikuchi,
Ken Koseki,
Yoshiharu Ito,
Yoshiaki Inada,
Souichiro Kuramochi,
Hayato Wakabayashi,
Masafumi Okano,		 Hiromi Kuriyama,
Junichi Inutsuka,
Akari Tajima,
Tadashi Nakajima,
Yoshiharu Kudoh,
Fumihiko Koga,
Yasuo Kasagi,
Shinya Watanabe,
Tetsuo Nomoto		 A 1/1.8” 6.4 Mpixel 60 frames/s CMOS image sensor with seamless mode change
IEEE J. of Solid-State Circuits, vol. 41(12) December 2006 pp. 2998-3006
2005 Micron Technology Alex Krymski,
Nail Khaliullin,		 Howard Rhodes A 2 Electron noise, 1.3. Megapixel CMOS Sensor
Proc. 2003 IEEE Workshop on CCDs and Advanced Image Sensors, May 15-17, 2003 Bavaria, Germany
2003 Texas Instruments Jaroslav Hynecek Impactron – A New Solid State Image Intensifier
IEEE Trans. Electron Devices, vol. 48(10) Oct. 2001 pp. 2238-2241
2001 Fujifilm Tetsuo Yamada, Katsumi Ikeda,
Yong-Gwan
Kim,
Hideki Wakoh,
Tetsuo Toma,
Tomohiro Sakamoto,		 Kazuki Ogawa,
Eiichi Okamoto,
Kazuyuki Masukane,
Kazuya Oda,
Masafumi Inuiya		 A Progressive Scan CCD Image Sensor for DSC Applications
IEEE J. Solid-State Circuits, vol. 35(12) Dec. 2000 pp. 2044-2054
1999 Philips Jan Bosiers, Agnes Kleimann, Arjen Vander Sijde,
Laurens Korthout,
Daniel Verbugt,		 Herman Peek,
Edwin Roks,
Anco Heringa,
Frans Vledder,
Peter Opmeer		 A 2/3” 2M pixel progressive scan FT-CCD for digital still camera applications
Proc. 1998 IEEE International Electron Devices Meeting, pp. 37-40