2011 INTERNATIONAL IMAGE SENSOR WORKSHOP
June 8-11, 2011 Hokkaido, Japan
Wednesday, June 8th 2011
Session 1: Small Pixel Sensors I
Session chair: Albert Theuwissen (Harvest Imaging)
08:45-09:05
R1 |
Pixel Continues to Shrink….Small Pixels for Novel CMOS Image Sensors
G. Agranov, S. Smith, R. Mauritzson, S, Chieh, U. Boettiger, X. Li, X. Fan, A. Dokoutchaev, B. Gravelle, H. Lee. W. Qian, R. Johnson. Aptina LLC, USA |
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09:05-09:25
R2 |
A Review of the 1.4 mm Pixel Generation
R.Fontaine. Chipworks, Canada |
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09:25-09:45
R3 |
SNR Performance Comparison of 1.4mm Pixel : FSI, Light-guide, and BSI
Kyungho Lee, JungChak Ahn, Bumsuk Kim, Taesub Jung, Sangjoo Lee, Moosup Lim, Chang-Rok Moon, Sangil Jung, Junetaeg Lee, Hongki Kim, Duckhyung Lee, Hiroshige Goto, Chi-Young Choi, and Yun-Tae Lee. Samsung Electronics Co., Ltd., Korea |
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09:45-10:05
R5 |
Pixel-to-Pixel Isolation by Deep Trench Technology: Application to CMOS Image Sensor
A. Tournier, F. Leverd, L. Favennec, C. Perrot, L. Pinzelli, M. Gatefait, N.Cherault, D. JeanJean, J.-P. Carrere, F. Hirigoyen, L. Grant, F. Roy. STMicroelectronics, France |
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Session 2: Small Pixel Sensors IISession chair: Jung Chak Ahn (Samsung) |
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10:25-10:45
R6 |
Quantum Efficiency Simulation Using Transport Equations
William Gazeley and Dan McGrath. Aptina Imaging, USA |
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10:45-11:05
R7 |
Crosstalk Metrics and the Characterization of 1.1μ-pixel CIS
C. Chao, H.Y. Tu, K.Y. Chou, P.S. Chou, F.L. Hsueh, W.H. Wei, R.J. Lin, and B.C. Hseih. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC |
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11:05-11:25
R8 |
Back Illuminated Vertically Pinned Photodiode with in Depth Charge Storage
J. Michelot1,2, F. Roy1, J. Prima1, C. Augier1, F. Barbier1, S. Ricq1, P. Boulenc1, Z. Essa1, L. Pinzelli1, H. Leininger1, M. Gatefait1, J.-E. Broquin2. 1STMicroelectronics, France; 2IMEP-LAHC, France |
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11:25-11:45
R9 |
The Mass Production of Second Generation 65 nm BSI CMOS Image Sensors
H. Rhodes, S. Manabe, V.C.Venezia, K. C. Ku, Z. Lin, P. Fu, D. Tai, A. Shah, R. Liu, R. Yang, P. Matagne, S. Hu. OmniVision Technologies, Inc.,USA |
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Session 3: Invited Presentation and Process TechnologySession chair: Shou-Gwo Wuu (TSMC) |
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13:15-13:45
I1 |
Invited Presentation-I
Technology of Color Filter Materials for Image Sensor Hiroshi Taguchi, Masashi Enokido. FUJIFILM Electronic Materials Co., Ltd.,Japan |
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13:45-14:05
R11 |
Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface
Rihito Kuroda, Taiki Nakazawa, Katsuhiko Hanzawa and Shigetoshi Sugawa. Tohoku University, Japan |
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14:05-14:20
R12 |
High Performance and High Yield Junction Formation with Full Device Exposure Laser Thermal Annealing
K. Huet1, C. Boniface1, J. Venturini1, Z. Ait Fqir Ali-Guerry2,3, R. Beneyton2, M.Marty², D. Dutartre2, F. Roy2. 1EXCICO, France; 2STMicroelectronics, France;3Institut des Nanotechnologies; France |
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14:20-14:35
R13 |
A Highly Manufacturable Backside Illumination Technology for CMOS Image Sensor
Yunki Lee, Chang-rok Moon, Doowon Kwon, Jinho Kim, Byoung jun Park, Yuyeon Yu, Gilsang Yoo, Sanghoon Kim, Seunghoon Shin, Taehun Lee and Duckhyung Lee. Samsung Electronics Co. LTD., Korea |
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Session 4: Poster PresentationsSession chair: Jun Ohta (Nara Institute of Science and Technology) Lindsay Grant (ST Microelectronics) |
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P1 | Performance Improvements of Polarization Analyzing CMOS Image Sensor Using Multiple Pixel Array Architecture and 65nm Standard CMOS Process
Takashi TOKUDA, Hitoshi MATSUOKA, Sanshiro SHISHIDO, Toshihiko NODA, Kiyotaka SASAGAWA and Jun OHTA. Nara Institute of Science and Technology, Japan |
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P2 | High Resolution CCD Polarization Imaging Sensor
Viktor Gruev and Tim York. Washington University, USA |
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P4 | A 2/3-type 2.3-Mega Pixel IT-CCD for HD 1080p60
Takuya Asano, Yoshinori Horikawa, Kazuaki Hirata, Ryoichi Nagayoshi, Akira Tsukamoto. Panasonic Corporation, Japan |
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P5 | A High Speed CMOS Dual Line Scan Imager for Industrial Applications
P. Donegan, L. Korthout, M. Moser, V. Bommu, Y. Lin, A. Kumar, F. Feng, D. Marchesan, D.Verbugt, P. Albertini, W.de Haan, S. Xie, D. Atos, W. Maes, J. de eulmeester, M. Sonder, E. Fox. Teledyne DALSA Corporation, Canada |
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P6 | Ageing Effects on Image Sensors: Neutron Irradiation Studies on Wafer and Packaged Devices
Gayathri G. Nampoothiri1, Albert J. P. Theuwissen1, 2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging, Belgium |
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P7 | Analog Multiplex Bus Readout Method to Reduce Ghosting Image Artifact in CMOS Image Sensors
Rahul Sankhe, Raja Reddy P. ON Semiconductor Technology India Pvt. Ltd., India |
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P8 | Study of Image Artifacts Caused by the Single-Ended CTA Column Comparator Used in CMOS Imagers
M.D. Purcell, G.G. Storm, J. K Moore, M. Wigley, D. Tolmie. STMicroelectronics, U |
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P9 | Column-Parallel Circuits with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors
Yue Chen1, Yang Xu1, Adri J. Mierop2 and Albert J.P. Theuwissen1,3. 1Delft University of Technology, the Netherlands; 2Teledyne DALSA B.V., the Netherlands; 3Harvest Imaging, Belgium |
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P10 | Post-ADC Digital Filtering in the CIS with the Column Single Slope ADC
Toshinori Otaka, Takumi Hiraga and Takayuki Hamamoto. Tokyo University of Science, Japan |
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P12 | Prototype Line‐Scan Device with 12‐bit Charge Domain Column‐Parallel Successive Approximation ADCLaurens Korthout, Daniel Verbugt, Paul Donegan, Adri Mierop. Teledyne DALSA Professional Imaging, The Netherland |
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P13 | Analysis of Front‐end Multiplexing for Column Parallel Image Sensors
Daniel Van Blerkom, Steve Huang, Loc Truong and Barmak Mansoorian. Forza Silicon Corporation, USA |
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P15 | Accurate Capacitance and RC Extraction Software Tool for Pixel, Sensor, and Precision Analog Designs
M. Ershov1, M.Cadjan1, Y.Feinberg1, X.Li2, G.C.Wan2, and G.Agranov2. 1Silicon Frontline Technology, USA; 2Aptina Imaging, USA |
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P16 | Single-Photon Avalanche Diodes in sub-100nm Standard CMOS Technologies
Mohammad Azim Karami, Hyung-June Yoon, and Edoardo Charbon. Delft University of Technology, Netherlands |
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P17 | An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS
Eric A. G. Webster1, Justin A. Richardson2, Lindsay A. Grant3, David Renshaw1, Robert K. Henderson1. 1University of Edinburgh, UK; 2University of Edinburgh and Dialog Semiconductor; 3ST Microelectronics, UK |
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P19 | Enhanced X-RAY CMOS Sensor Panel for Radio and Fluoro Application Using a Low Noise Charge Amplifier Pixel with a Partially Pinned PD
Assaf Lahav1, Tomer Leitner, Raz Reshef & Amos Fenigstein. 1Tower Semiconductor LTD., Israel |
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P20 | L²CMOS Image Sensor for Low Light Vision
Pierre Fereyre, Frédéric Devrière, Stéphane Gesset, Marie Guillon, Thierry Ligozat, Frédéric Mayer, Gareth Powell, Vincent Prevost, Frédéric Ramus, Olivier Seignol. e2v semiconductors, France |
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P21 | Color Channel Weights in a Noise Evaluation
Samu Koskinen, Eero Tuulos, Juha Alakarhu. Nokia, Finland |
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P22 | Design and Preliminary Evaluation of CMOS Image Sensor with Pseudorandom Pixel Placement
Junichi Akita, Yui Maeda, Akio Kitagawa. Kanazawa University, Japan |
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P24 | Photo-Sensitive Area Modulation Pixel for 3D Real-Time CCD Imager
Y. Hashimoto, F. Kurihara, K. Murakami, K. Imai, K. Taniguchi1. Matsushita Electric Works, Ltd.,Japan; 1Osaka University, Japan |
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P25 | CMOS Image Sensor for 3-D Range Map Acquisition Using Time Encoded 2-D Structured Pattern
Hiroki Yabe, Makoto Ikeda. University of Tokyo, Japan |
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P27 | An Integration Time Prediction Based Algorithm for Wide Dynamic Range 3D-Stacked Image Sensors
Adi Xhakoni1, David San Segundo Bello2, Koen De Munck2, Padmakumar Ramachandra Rao2, Piet De Moor2 and Georges Gielen1. 1K.U.Leuven, Belgium; 2IMEC, Belgium |
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P28 | A QCIF 145dB Imager For Focal Plane Processor Chips Using a Tone Mapping Technique in Standard 0.35μm CMOS Technology
S. Vargas-Sierra, G. Liñán-Cembrano, A. Rodríguez-Vázquez. CSIC and Universidad de Sevilla, Spain |
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P29 | Temperature Compensation Scheme for Logarithmic CMOS Image Sensor
Hakim Zimouche, Hawraa Amhaz and Gilles Sicard. CNRS, France |
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P30 | Smart Readout Technique based on Temporal Redundancies Suppression Designed for Logarithmic CMOS Image Sensor
Hawraa AMHAZ, Hakim ZIMOUCHE and Gilles SICARD. CNRS, France |
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P31 | Backside Illuminated Hybrid FPA Achieving Low Cross-Talk Combined with High QE
Koen De Munck, Padmakumar Rao Ramachandra, Kiki Minoglou, Joeri De Vos, Deniz Sabuncuoglu and Piet De Moor. IMEC, Belgium |
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P32 | Backside Illuminated CMOS Snapshot Shutter Imager on 50μm Thick High Resistivity Silicon
Stefan Lauxtermann, Dirk Leipold. Sensor Creations., Inc., USA |
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P33 | CMOS Image Sensor with an Overlaid Organic Photoelectric Conversion Layer: Optical Advantages of Capturing Slanting Rays of Light
Mikio Ihama, Hiroshi Inomata, Hideki Asano, Shinji Imai, Tetsurou Mitsui, Yuuki Imada, Masayuki Hayashi, Takashi Gotou, Hideyuki Suzuki, Daigo Sawaki, Mitsumasa Hamano, Toshihiro Nakatani, Yasuyoshi Mishima. FUJIFILM Corporation, Japan |
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P34 | The Gigavision Camera – A 2Mpixel Image Sensor with 0.56μm2 1-T Digital Pixels
HyungJune Yoon and Edoardo Charbon. Delft University of Technology, The Netherlands |
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P35 | Low Noise High Dynamic Range 2.3Mpixel CMOS Image Sensor Capable of 100Hz Frame Rate at Full HD ResolutionPaul Vu, Boyd Fowler, Steve Mims, Chiao Liu, Janusz Balicki, Hung Do, Wang Li, Jeff Appelbaum. Fairchild Imaging, Inc., USA |
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Thursday June 9th, 2011 |
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Session 05: Time-of-Flight and Time-Resolved ImagingSession chair: Pierre Magnan (ISAE) |
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08:30-08:45
R15 |
Experimental Comparison of Four Different CMOS Pixel Architectures Used in Indirect Time-of-Flight Distance Measurement Sensors
D. Durini, A. Spickermann, J. Fink, W. Brockherde, A. Grabmaier, B. J. Hosticka. Fraunhofer Institute for Microelectronic Circuits and Systems, Germany |
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08:45-09:05
R16 |
Time Of Flight Image Sensors in 0.18μm CMOS Technology: a Comparative Overview of Different Approaches
David Stoppa1, Lucio Pancheri1, Nicola Massari1, Mattia Malfatti1, Matteo Perenzoni1, Gianmaria Pedretti1, Gian-Franco Dalla Betta2. 1Fondazione Bruno Kessler, Italy; 2DISI, University of Trento, Italy |
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09:05-09:20
R17 |
Dark Current Suppression during High Speed Photogate Modulation for 3D ToF Imaging Pixel
Tae-Yon Lee1, YongJei Lee1, Dong-Ki Min1, Joonho Lee1, Young-Gu Jin1, Yoondong Park1, and Chilhee Chung1, Ilia Ovsiannikov2 and Eric R. Fossum1,2.1Samsung Electronics, South Korea; 2Samsung Semiconductor Inc., USA |
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09:20-09:35
R18 |
Hybrid Back-Side Illuminated Distance Measuring Sensor Array with Ring Gate Structure
Mitsuhito Mase, Takashi Suzuki, Shigeyuki Nakamura, Michito Hirayanagi, Naoto Sakurai, Terumasa Nagano, Atsushi Ishida, Seiichiro Mizuno and Mitsutaka Takemura. Hamamatsu Photonics K.K.,Japan |
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09:35-9:50
R20 |
High‐Speed General Purpose Demodulation Pixels Based on Buried Photodiodes
Lysandre‐Edouard Bonjour 1,2, Thomas Baechler1, Maher Kayal 2. 1CSEM SA, Switzerland; 2EPFL STI IEL GR‐KA, Switzerland |
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9:50-10:10
R21 |
A CMOS Image Sensor with Draining Only Modulation Pixels for Sub-Nanosecond Time-Resolved Imaging
Shoji Kawahito, Zhuo Li and Keita Yasutomi. Shizuoka University, Japan |
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Session 06: Invited Presentation and Various Imager Design TopicsSession chair: Johannes Solhusvik (Aptina Norway) |
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10:30-11:00
I2 |
Invited Presentation-II
New Application Areas Made Possible by High Speed Vision Masatoshi Ishikawa. University of Tokyo, Japan |
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11:00-11:15
R22 |
A Multi-Functional Imager for TOF and High Performance Video Applications Using a Global Shuttered 5mm Cmos Pixel.
Peter Centen1, Juul v.d Heijkant1, Jeroen Rotte1, Klaas Jan Damstra1, |
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11:15-11:30
R23 |
Backside Thinned, 2.5 e-RMS, BSI, 700fps, 1760×1760 Pixels Wave-Front Imager with 88 Parallel LVDS Output Channels
Bart Dierickx1, Benoit Dupont1, Arnaud Defernez1, Martin Fryer2, Paul Jorden2, Andrew Walker2, Andrew Pike2, Paul Jerram2, Jerome Pratlong2. 1 Caeleste, Belgium; 2 e2v, UK |
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11:30-11:50
R24 |
CCD and CMOS Combined, Low Noise and Low Power Dissipation Linear Image Sensor with Variable Charge Mixing Mode
Makoto Monoi1, Masayuki Ohki3, Yoshihiro Hayakawa3, Syu Sasaki2 .1 Toshiba Corporation, Japan; 2 Iwate TOSHIBA electronics, Japan; 3 Toshiba micro-electronics, Japan |
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11:50-12:05
R25 |
An Implantable CMOS Image Sensor with Light Guide Array Structure and Fluorescent Filter
Kiyotaka Sasagawa1,2, Keisuke Ando1, Takuma Kobayashi1,2, Toshihiko Noda1,2, Takashi Tokuda1,2, Yumiko Hatanaka1,2, Hideki Tamura1,2, Sadao Shiosaka1,2, Jun Ohta1,2. 1Nara Institute of Science and Technology, Japan;2Japan Science and Technology Agency, Japan |
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12:05-12:20
R26 |
An Autonomous micro-Digital Sun Sensor Implemented with a CMOS Image Sensor Achieving 0.004º Resolution @ 21mW
Ning Xie1, Albert J.P. Theuwissen1, 2, Bernhard Büttgen1, 3. 1Delft University of Technology, Netherlands; 2Harvest Imaging, Bree, Belgium; 3 MESA Imaging, Switzerland |
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Session 07: NoiseSession chair: Boyd Fowler (Farichild Imaging) |
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13:50-14:10
R27 |
New Source of Random Telegraph Signal in CMOS Image Sensors
V. Goiffon1, P. Magnan1, P. Martin-Gonthier1, C. Virmontois1, and M. Gaillardin2.1ISAE, France; 2CEA DAM-DIF, France |
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14:10-14:25
R28 |
Analysis of Blinking Pixels in CCD Imagers with and without Surface Pinning
Inge Peters, Erik Bogaart*, Erik-Jan Manoury, Adri Mierop, Jan Bosiers. TELEDYNE DALSA Professional Imaging, the Netherlands; *ASML, the Netherlands |
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14:25-14:45
R29 |
Dark Fixed Pattern Noise Generation by Negative-Bias-Temperature (NBT) Stress on CMOS Imager Pixel Transfer Gate
Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami. Toshiba Corporation, Japan |
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14:45-15:00
R30 |
5MPix, 30fps CMOS Image Sensor with Very Low Temporal Line Noise
G.G. Storm, M.D. Purcell, J. K Moore, M. Wigley, D. Tolmie, L.A Grant. STMicroelectronics, UK |
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15:00-15:15
R31 |
4T CMOS Image Sensor Pixel Degradation due to X-ray Radiation
Jiaming Tan1, Bernhard Büttgen1 and Albert J. P. Theuwissen1,2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging, Belgium |
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Session 08: Stacked Structures, High Dynamic Range Sensors, and CCDsSession chair: Koichi Mizobuchi (Olympus Medical Systems) |
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15:35-15:50
R32 |
Investigation of Two-Layer Photodetectors for YSNR10 Improvement in Submicron Pixels
Eric R. Fossum. Samsung Electronics Semiconductor R&D Center, South Korea and Thayer School of Engineering at Dartmouth, USA |
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15:50-16:05
R33 |
A 128 x 96 Pixel Stack-Type Color Image Sensor with B-, G-, R-sensitive Organic Photoconductive Films
Hokuto Seo1*, Satoshi Aihara1, Toshihisa Watabe1, Hiroshi Ohtake1, Toshikatsu Sakai1, Misao Kubota1, Norifumi Egami1, Takahiro Hiramatsu2, Tokiyoshi Matsuda2, Mamoru Furuta2, and Takashi Hirao2. 1NHK, Japan; 2Kochi University of Technology, Japan |
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16:05-16:25
R34 |
Process Integration Aspects of Back Illuminated CMOS Imagers Using Smart StackingTM Technology with Best in Class Direct Bonding
Ruth Shima Edelstein1, Omer Katz1, Becky Lavi1, Ishai Aberman1, Sagee Rosenthal1, Michal Shadmi1, Shay Arad1, Nili Golan1, Michal Shach Caplan1, Morad Massalha1, Chrystelle Lagahe-Blanchard2, Laurent Marinier2, Richard Fontanière2, Arnaud Castex2, Marcel Broekaart2, Muriel Martinez2, Nathalie Milhet2, Arnaud Rigny2, Christine Pelissier2.1TowerJazz, Israel; 2SOITEC, France |
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16:25-16:40
R35 |
A 768×576 Logarithmic Image Sensor with Photodiode in Solar Cell mode
Yang Ni, YiMing Zhu, Bogdan Arion. New Imaging Technologies SA, France |
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16:40-16:55
R36 |
An 89dB Dynamic Range CMOS Image Sensor with Dual Transfer Gate Pixel
Xinyang Wang, Bram Wolfs, Guy Meynants, Jan Bogaerts. CMOSIS N.V, Belgium |
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16:55-17:15
R38 |
A 1080 HD Ready 1/2.33-type 12M Pixel CCD Image Sensor with Dual Channel Horizontal CCD
Koichi Yonemura, Toshihumi Habara, Hirokazu Shiraki, Yoshiaki Sato, Akira Tsukamoto. Panasonic Corporation, Japan |
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Session 09: Invited Presentation-IIISession chair: Shoji Kawahito (Shizuoka University) |
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17:30-18:00
I3 |
The 25th Anniversary of IISW: Reflections on Directions
Eric R. Fossum. Intl. Image Sensor Society, USA |
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Friday June 10th, 2011 | ||
Session 10: Invited Presentation and Avalanche Diode SensorsSession chair: Shigetoshi Sugawa (Tohoku University) Satoshi Aihara (NHK) |
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08:30-09:00
I4 |
Invited Presentation-IV
Single Photon Imaging Peter Seitz. CSEM, Switzerland and EPFL STI IMT NE, Switzerland |
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09:00-09:20
R39 |
Single Photon Avalanche Diodes in 90nm CMOS Imaging Technology with sub-1Hz Median Dark Count Rate
Eric. A. G. Webster1, Justin Richardson1, Lindsay Grant2, Robert K. Henderson1.1The University of Edinburgh, UK; 2STMicroelectronics, UK |
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09:20-09:40
R40 |
A 32×32 SPAD Pixel Array with Nanosecond Gating and Analog Readout
Lucio Pancheri, Nicola Massari, Fausto Borghetti and David Stoppa. Fondazione Bruno Kessler, Italy |
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09:40-10:00
R41 |
A Time-Gated 128X128 CMOS Spad Array for On-Chip Fluorescence Detection
Y. Maruyama and E. Charbon. Delft University of Technology, the Netherlands |
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10:00-10:15
R42 |
3D Near-Infrared Imaging Based on a SPAD Image Sensor
Juan Mata Pavia1,2, Cristiano Niclass1, Claudio Favi1, Martin Wolf2, Edoardo Charbon1,3. 1Ecole Polytechnique Fédérale de Lausanne, Switzerland;2University Hospital Zürich, Switzerland; 3TU Delft, Netherlands |
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10:15-10:30
R43 |
185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology
Andreas Eisele1,2, Robert Henderson3, Bernd Schmidtke2, Tobias Funk2, Lindsay Grant4, Justin Richardson3,5, Wolfgang Freude1,6. 1 IPQ, Karlsruhe Institute of Technology, Germany; 2 Robert Bosch GmbH, Germany; 3 The University of Edinburgh,UK; 4STMicroelectronics Imaging Division, UK; 5 Dialog Semiconductor Ltd., UK; 6 IMT, Karlsruhe Institute of Technology, Germany |
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10:30-10:45
R44 |
A Disdrometer Based on Ultra-Fast SPAD Cameras
A. Berthoud1, S. Burri1, C. Bruschini1, A. Berne1, and E. Charbon1,2. 1EPFL, Switzerland; 2Delft University of Technology, the Netherlands |
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Session 11: Large Area Sensors and Xray SensorsSession chair: Bart Dierickx (Caeleste) |
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11:05-11:25
R45 |
A 300mm Wafer-Size CMOS Image Sensor for Low-Light-Level Imaging
Hidekazu Takahashi, Yuichiro Yamashita, Shin Kikuchi, Masato Fujita, Satoshi Hirayama, Taikan Kanou, Sakae Hashimoto, Kazuyuki Shigeta, Takashi Aoki, Genzo Momma, Shunsuke Inoue. Canon INC., Japan |
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11:25-11:40
R46 |
A 23 x 25.9cm2 RGB color CMOS Imager System for Digital Photography
Hein Loijens, Bart Dillen, Wasim Muhammad, Daniel Verbugt, Laurens Korthout, Peter te Vaarwerk, Auke van der Heide, Leon Ponjee, Kim Theuwissen, Piet Jansen, Frank Polderdijk, Jan Bosiers. DALSA Professional Imaging, the Netherlands |
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11:40-11:55
R47 |
A 61mmx63mm, 16Million Pixels, 40 Frames per Second, Radiation-Hard CMOS Image Sensor for Transmission Electron Microscopy
N. Guerrini1, R. Turchetta1, G. Van Hoften2, A. R. Faruqi3, G. McMullan3, R. Henderson3. 1Rutherford Appleton Laboratory, UK; 2 FEI, the Netherlands; 3MRC Laboratory of Molecular Biology, UK |
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11:55-12:10
R48 |
Color X-ray Photon Counting Image Sensing
Bart Dierickx1,2, Benoit Dupont1,3, Arnaud Defernez1, Nayera Ahmed1. 1Caeleste, Belgium; 2V.U.B., Belgium; 3Université Paris XIII, France |
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12:10-12:25
R50 |
Single Grain TFTs and Lateral Photodiodes for Large Area X-ray Detection
A. Arslan, R. Ishihara, C.I.M. Beenakker. Delft University of Technology, the Netherlands |
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Saturday, June 11th 2011 | ||
Session 12: Global Shutter SensorsSession chair: Daniel Van Blerkom (Forza Silicon) |
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08:30-08:50
R51 |
Backside Illuminated Global Shutter CMOS Image Sensors
Guy Meynants, Jan Bogaerts, Xinyang Wang, Guido Vanhorebeek. CMOSIS |
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08:50-09:10
R53 |
A 1.2MP 1/3” Global Shutter CMOS Image Sensor with Pixel-Wise Automatic Gain Selection
Johannes Solhusvik1, Sergey Velichko2, Trygve Willassen1, Sohrab Yaghmai1, Jenny Olsson1, Anders Rosnes1, Tore Martinussen1, Per Olaf Pahr1, Siri Eikedal1, Steve Shaw3, Ranjit Bhamra3, Dan Pates2, Scott Smith2, Lingtao Jiang2, David Wing2 , Jenny Bai2, Satyadev Nagaraja2, Ajaya Chilumula2. 1Aptina, Norway;2Aptina, USA; 3Aptina, UK |
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09:10-09:25
R54 |
A Low Noise Low Power Global Shutter CMOS Pixel Having Single Readout Capability And Good Shutter Efficiency.
Yannick De Wit, Tomas Geurts. ON Semiconductor, Belgium |
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09:25-9:40
R55 |
Dark Current Characterization of CMOS Global Shutter Pixels using Pinned Storage Diodes
Keita Yasutomi, Yusuke Sadanaga, Taishi Takasawa, Shinya Itoh, Shoji Kawahito. Shizuoka University, Japan |
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9:40-9:55
R56 |
A Common Gate Pinned Photodiode Pixel
Yannick De Wit, Manuel Innocent. On Semiconductor, Belgium |
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Session 13: High-Speed and ADC TechniquesSession chair: Tetsuo Nomoto (Sony) |
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10:15-10:30
R57 |
Progress of Ultra-high-speed Image Sensors with In-situ CCD Storage
T. G. Etoh1, V. T. S. Dao1, H. D. Nguyen1, K. Fife2, M. Kureta3, M. Segawa3, M. Arai4 and T. Shinohara4. 1Kinki University, Japan; 2Ubixum Inc, USA; 3JAEA, Japan; 4J-PARC, Japan |
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10:30-10:45
R58 |
Design of a PTC-Inspired Segmented ADC for High Speed Column Parallel CMOS Image Sensor
Steven Huang, Ramy Tantawy, Sinh Lam, Daniel Van Blerkom and Barmak Mansoorian. Forza Silicon Corporation, USA |
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10:45-11:00
R59 |
A 26.2Mpixel, 74fps, Global Shutter CMOS Imager with 20Gb/s Interface for Multi Object Monitoring
Cedric Esquenet, John Compiet, Tim Blanchaert, Tomas Geurts, Joost Decupere. ON Semiconductor, Belgium |
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11:00-11:15 | High Speed 36 Gbps 12Mpixel global pipelined shutter CMOS image sensor with CDS
Jan Bogaerts, Koen Ruythooren, Aleksandar Gvozdenovic, Kevin Van Esbroeck, Bart Ceulemans, Werner Ogiers, Gavril Arsinte, Xinyang Wang, Guy Meynants, CMOSIS nv, Belgium |
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11:15-11:30
R61 |
A High-Speed Low-Noise CIS with 12b 2-stage Pipelined Cyclic ADCs
Jong-Ho Park1, Satoshi Aoyama1, Takashi Watanabe1, Tomohiko Kosugi1, Zheng Liu1, Tomoyuki Akahori1, Masaaki Sasaki1, Keigo Isobe1, Yuichi Kaneko1, Kazuki Muramatsu1, Tetsuya Iida1and Shoji Kawahito1,2. 1Brookman Technology, Inc., Japan; 2Shizuoka University, Japan |
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11:30-11:50
R62 |
A 33 Mpixel, 120 fps CMOS Image Sensor for UDTV Application with Two-stage Column-Parallel Cyclic ADCs
K. Kitamura1, T. Watabe1, Y. Sadanaga2, T. Sawamoto2, T. Kosugi3, T. Akahori3, T. Iida3, K. Isobe3, T. Watanabe3,H. Shimamoto1, H. Ohtake1, S. Aoyama3, S. Kawahito2, and N. Egami1. 1NHK, Japan; 2Shizuoka University, Japan; 3Brookman Technology, Inc., Japan |
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11:50-12:10
R63 |
A 17.7Mpixel 120fps CMOS Image Sensor with 34.8Gb/s Readout
Takayuki Toyama1, Koji Mishima1, Hiroyuki Tsuchiya1, Tatsuya Ichikawa1, Hiroyuki Iwaki1, Yuji Gendai1, Hirotaka Murakami1, Kenichi Takamiya2, Hiroshi Shiroshita1, Noriyuki Fukushima1. 1Sony, Japan; 2Sony LSI Design, Japan |