WALTER KOSONOCKY AWARD

Recipients

The IISS Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997.

Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop. The award committee solicits nominations biennially. The award is announced and presented at the Workshop.

Year/Org. Recipients Recipients Paper
2023

Canon Inc.

K. Morimoto

J. Iwata

M. Shinohara

H. Sekine

A. Abdelghafar

H. Tsuchiya

Y. Kuroda

K. Tojima

W. Endo

Y. Maehashi

Y. Ota

T. Sasago

S. Maekawa

S. Hikosaka

T. Kanou

A. Kato

T. Tezuka

S. Yoshizaki

T. Ogawa

K. Uehira

A. Ehara

F. Inui

Y. Matsuno

K. Sakurai

T. Ichikawa

3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing 

2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 20.2.1-20.2.4

2021

STMicroelectronics, IMEP-LaHC, Univ. Grenoble Alpes,
LNL, Univ. Claude Bernard Lyon, LETI-CEA Tech

Francois
Roy

Andrej
Suler

Thomas
Dalleau

Romain
Duru

Daniel
Benoit

Jihane
Arnaud

Yvon
Cazaux

Catherine
Chaton

Laurent
Montes

Panagiota
Morfouli

Guo-Neng
Lu

Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications 

MDPI Sensors, Vol.20, No3. Article No.727, pp.1-8, Jan 2020.

2019

Sony

Sozo
Yokogawa

Itaru
Oshiyama

Harumi
Ikeda

Yoshiki
Ebiko

Tomoyuki
Hirano

Suguru
Saito

Takashi
Oinoue

Yoshiya
Hagimoto

Hayato
Iwamoto

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels 

Scientific Reports, Vol. 7, Article No. 3832, pp. 1-9, June 2017.

2017

Microsoft

Cyrus S.
Bamji

Patrick
O’Connor

Tamer
Elkhatib

Swati
Mehta

Barry
Thompson

Lawrence A.
Prather

Dane
Snow

Onur Can
Akkaya

Andy
Daniel

Andrew D.
Payne

Travis
Perry

Mike
Fenton

Vei-Han
Chan

A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADC 

IEEE JSSC, Vol. 50, No. 1, pp. 303-318, January 2015.

2015

Sony

Shunichi
Sukegawa

Tsutomu
Nakajima

Ken
Koseki

Tsutomu
Haruta

Koji
Fukumoto

Keishi
Inoue

Takashi
Nagano

Teruo
Hirayama

Taku
Umebayashi

Hiroshi
Kawanobe

Isao
Hirota

Masanori
Kasai

Toshifumi
Wakano

Hiroshi
Takahashi

Yoshikazu
Nitta

Noriyuki
Fukushima

A 1/4-inch 8Mpixel Back-Illuminated Stacked CMOS Image Sensor

ISSCC Dig. Tech. Papers, pp. 484 – 485, Feb. 2013.

2013

NHK

Shizuoka University

Kazuya
Kitamura

Toshihisa
Watabe

Takehide
Sawamoto

Tomohiko
Kosugi

Tomoyuki
Akahori

Tetsuya
Iida

Keigo
Isobe

Takashi
Watanabe

Hiroshi
Shimamoto

Hiroshi
Ohtake

Satoshi
Aoyama

Shoji
Kawahito

Norifumi
Egami

A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters

IEEE Transactions On Electron Devices, 59(12), December 2012, pp. 3426-3433.

2011

Sony

Hayato
Wakabayashi

Keiji
Yamaguchi

Masafumi
Okano

Souichiro
Kuramochi

Oichi
Kumagai

Seijiro
Sakane

Masamichi
Ito

Masahiro
Hatano

Masaru
Kikuchi

Yuuki
Yamagata

Takeshi
Shikanai

Ken
Koseki

Keiji
Mabuchi

Yasushi
Maruyama

Kentaro
Akiyama

Eiji
Miyata

Tomoyuki
Honda

Masanori
Ohashi

Tetsuo
Nomoto

A 1/2.3-inch 10.3Mpixel 50 frame/s Back-Illuminated CMOS Image Sensor

Proc. 2010 International Solid-State Circuits Conference (ISSCC), pp. 410-411, San Francisco, CA USA February 2010.

2009

Eastman
Kodak

Eric
Stevens

Hung
Doan

Jeffery
Kyan

Gang
Shi

Jian
Wu

Hirofumi
Komori

Hiroaki
Fujita

Christopher
Parks

Cristian
Tivarus

Low Crosstalk and Low Dark Current CMOS Image Sensor Technology Using a Hole-Based Detector

Proc. International Solid-State Circuits Conference (ISSCC), pp.59-61 San Francisco, California USA February 2008.

2007

Sony

Satoshi
Yoshihara

Yoshikazu
Nitta

Masaru
Kikuchi

Ken
Koseki

Yoshiharu
Ito

Yoshiaki
Inada

Souichiro
Kuramochi

Hayato
Wakabayashi

Masafumi
Okano

Hiromi
Kuriyama

Junichi
Inutsuka

Akari
Tajima

Tadashi
Nakajima

Yoshiharu
Kudoh

Fumihiko
Koga

Yasuo
Kasagi

Shinya
Watanabe

Tetsuo
Nomoto

A 1/1.8” 6.4 Mpixel 60 frames/s CMOS image sensor with seamless mode change

IEEE J. of Solid-State Circuits, vol. 41(12) December 2006 pp. 2998-3006

2005

Micron Technology

Alex
Krymski

Nail
Khaliullin

Howard
Rhodes
A 2 Electron noise, 1.3. Megapixel CMOS Sensor

Proc. 2003 IEEE Workshop on CCDs and Advanced Image Sensors, May 15-17, 2003 Bavaria, Germany

2003

Texas Instruments

Jaroslav
Hynecek
Impactron – A New Solid State Image Intensifier

IEEE Trans. Electron Devices, vol. 48(10) Oct. 2001 pp. 2238-2241

2001

Fujifilm

Tetsuo
Yamada

Katsumi
Ikeda

Yong-Gwan
Kim

Hideki
Wakoh

Tetsuo
Toma

Tomohiro
Sakamoto

Kazuki
Ogawa

Eiichi
Okamoto

Kazuyuki
Masukane

Kazuya
Oda

Masafumi
Inuiya

A Progressive Scan CCD Image Sensor for DSC Applications

IEEE J. Solid-State Circuits, vol. 35(12) Dec. 2000 pp. 2044-2054

1999

Philips

Jan
Bosiers

Agnes
Kleimann

Arjen
Vander Sijde

Laurens
Korthout

Daniel
Verbugt

Herman
Peek

Edwin
Roks

Anco
Heringa

Frans
Vledder

Peter
Opmeer

A 2/3” 2M pixel progressive scan FT-CCD for digital still camera applications

Proc. 1998 IEEE International Electron Devices Meeting, pp. 37-40