2009 INTERNATIONAL IMAGE SENSOR WORKSHOP
June 26-28, 2009 Bergen, Norway
Papers should be cited as:
Author(s), Title, in Proc. of 2009 International Image Sensor Workshop,
Bergen, NORWAY, June 22-28, 2009.
Friday, June 26th 2009
| 08:00-08:30 | Registration |
| 08:30-08:32 | Welcome Eric R Fossum – Welcome by Image Sensors Inc. |
| 08:32-08:50 | Opening Albert Theuwissen – General Chair’s opening remarks Johannes Solhusvik – Technical Program Chair’s opening remarks |
| Session 01 | Invited presentation and BSI Session chair: Boyd Fowler, Fairchild Imaging, USA |
| 08:50-09:30 |
Invited Presentation – I Sense and SensitivityMats Wernersson, Henrik Eliasson, Sony Ericsson Mobile Communications AB, Lund, Sweden |
| 09:30-09:50 |
Improved color separation for a backside illuminated image sensor with 1.4 μm pixel pitch Jens Prima1, Francois Roy1, Hugues Leininger1, Christophe Cowache1, Jerome Vaillant1, Luc Pinzelli1, Daniel Benoit1, Norbert Moussy2, Benoit Giffard2 1FTM Imaging, STMicroelectronics, Crolles, France. 2CEA Léti-MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France |
| 09:50-10:10 |
A Manufacturable Back-Side Illumination Technology using Bulk-Si Substrate for Advanced CMOS Image Sensors S.G. Wuu1, C.C. Wang, D.N. Yaung1, Y.L. Tu1, J.C. Liu1, T.H. Hsu1, F.J. Shiu1, C.Y. Yu1, G.Y. Shiau1, R.J. Lin, C.S.Tsai1, L. Tran1, SSChen1, CCWang1, SYHuang1, H. Rhodes2, D. Tai2, Y. Qian2, D. Mao2, S. Manabe2, A. Shah2, R. Yang2, J.C. Hsieh3, Calvin Chang3, C.W. Lu3, Shawn Tseng3. 1Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, R.O.C. 2OmniVision Technologies, Inc., 4275 Burton Drive, Santa Clara, CA 95054 3VisEra Technologies Company, Hsin-Chu, Taiwan, R.O.C. |
| 10:10-10:30 |
The Mass Production of BSI CMOS Image Sensors H. Rhodes, D. Tai, Y. Qian, D. Mao, V. Venezia, Wei Zheng, Z. Xiong, C.Y. Liu, K.C. Ku, S. Manabe, A. Shah, S. Sasidhar, P. Cizdziel, Z. Lin, A. Ercan, M. Bikumandla, R. Yang, P. Matagne, C. Yang, H. Yang, T.J. Dai, J. Li, S.G. Wuu1,D.N. Yaung1, C.C. Wang1, J.C. Liu1, C.S. Tsai1, Y.L.Tu1, T.H. Hsu1. Omnivision Technologies, Inc. USA;1Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C. |
| 10:30-10:45 | Break |
| Session 02 | BSI and small pixel sensors Session chair: Alex Krymski, Alexima, USA |
| 10:45-11:00 |
A 1.4 μm Pixel Backside Illuminated CMOS Image Sensor with 300 mm Wafer Based on 65 nm Logic Technology Y.Kohyama, H.Yamashita, S.Uya, T.Yoshida, N.Sakurai, I.Inoue, T.Yamaguchi,K.Nagata, H.Harakawa1, A.Murakoshi1, T.Harada1, M.Takahashi1, M.Morita1,K.Tanida1, M.Dohi1, K.Takahashi1, K.Iwade1, T.Matsumura1, H.Sugiyama1, H.Goto,K.Tomioka. Imaging Device Marketing & Engineering Dept., and 1Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Japan |
| 11:00-11:15 |
Towards a Three-Dimensional Back-Illuminated Miniaturized CMOS Pixel Technology using 100nm Inter-Layer Contacts Perceval Coudrain1,2,3, P. Magnan1, P. Batude3, X. Gagnard2, C. Leyris2, L. Depoyan2, Y. Cazaux3, M. Vinet3, B. Giffard3, P. Ancey2. 1Université de Toulouse,Institut Supérieur de l’Aéronautique et de l’Espace; 2STMicroelectronics, Crolles, France; 3CEA Leti-MINATEC, France |
| 11:15-11:30 |
Monolithic and Fully-Hybrid Backside Illuminated CMOS Imagers for Smart Sensing Padmakumar R. Rao, Kyriaki Minoglou, Koen De Munck, Deniz Sabuncuoglu Tezcan, Chris Van Hoof, Piet De Moor. IMEC, Belgium |
| 11:30-11:45 |
CMOS Synchronous shutter backside illuminated image sensor for hyperspectralimaging B. Dierickx1,3, B. Dupont1, Paul Jerram2, Martin Fryer2, Jérôme Pratlong2, Andrew Walker2, A. Defernez1. 1Caeleste CVBA, Belgium; 2e2v Ltd, UK; 3Vrije Universiteit Brussel (VUB), Belgium |
| 11:45-12:00 |
1.1μm Backside Imager vs. Frontside Imager: an optics-dedicated FDTD approach Flavien Hirigoyen, Jérôme Vaillant, Emilie Huss, Frederic Barbier, Jens Prima,François Roy, Didier Hérault. STMicroelectronics, Crolles, France |
| 12:00-13:30 | Lunch |
| 13:30-13:45 | IISW09 Group Picture (all workshop attendants) |
| Session 03 | Small pixel sensors and WLC Session Chair: Shoji Kawahito, Shizuoka University, Japan |
| 13:45-14:00 |
New Integration Technology of CIS for High Sensitivity Small Pixel Seounghyun Kim, Taegyu Kim, Munhwan Kim, Dongbin Park, Heesung Shim,Jongtaek Hwang, Sungho Jun, Ohjin Jung, Joonku Yoon, Minhyung Lee, Chulho Park,Jaewon Han, Joon Hwang, Dongbu HiTek , Chungbuk, KoreaPresenter: Hoon Jang, Dongbu HiTek , Chungbuk, Korea |
| 13:45-14:00 |
CMOS Image Sensor with a Thin Overlaid Panchromatic Organic Photoconductive Layer as the Best Candidate for Sensors with Reduced Pixel Size Mikio Ihama, Tetsurou Mitsui, Kimiatsu Nomura, Yoshiki Maehara, Hiroshi Inomata, Takashi Gotou, Yutaka Takeuchi. FUJIFILM Corporation, Frontier Core-Technology Laboratories, Japan |
| 14:00-14:15 |
A 1.4 μm pixel front-side-illuminated image sensor for mobile phones R. Daniel McGrath, John T. Compton, R. Michael Guidash, Edward T. Nelson, Christopher Parks, Joseph R. Summa. Eastman Kodak Company, USA |
| 14:15-14:30 |
CMOS image sensor with high refractive index lightpipe J. Gambino1, B. Leidy1, A. Watts1, C. Musante1, K. Ackerson1, S. Mongeon1, J. Adkisson1, R.J. Rassel1, K. Ogg1, J. Ellis-Monaghan1, M. Jaffe1, M. Laukkanen2, K. Karaste2, W. McLaughlin2, T. Gädda2, J. Rantala2. 1IBM Microelectronics, UK;2Silecs,, Finland |
| 14:30-14:45 |
Pixel continues to shrink…. Pixel Development for Novel CMOS Image Sensors G. Agranov, R. Mauritzson, J. Ladd, A. Dokoutchaev, X. Fan, X. Li, Z. Yin, R. Johnson, V. Lenchenkov, S. Nagaraja, W.Gazeley, J. Bai, H. Lee; A. D’Anna1, G. De-Amicis1; Aptina LLC, San Jose, USA; 1Micron Technology Inc., Avezzano, Italy |
| 14:45-15:00 |
Wafer Level Cameras – Novel Fabrication and Packaging Technologies Margarete Zoberbier1, Sven Hansen1, Marc Hennemayer1, Dietrich Tönnies1, Ralph Zoberbier1, Markus Brehm2, Andreas Kraft2, Martin Eisner3, Reinhard Völkel3, 1SUSS MicroTec Lithography, Germany, 2DELO Industrial Adhesives, Germany,3SUSS MicroOptics SA, Switzerland |
| 15:00-15:40 |
Invited Presentation – II A Four-Side Tileable Back Illuminated, Three-Dimensionally Integrated Megapixel CMOS Image Sensor Vyshnavi Suntharalingam1, R. Berger1, S. Clark2, J. Knecht1, A. Messier1, K. Newcomb1, D. Rathman1, R. Slattery1, A. Soares1, C. Stevenson1, K. Warner1,D. Young1, L.-P. Ang3, B. Mansoorian3, D. Shaver1, 1MIT Lincoln Laboratory, Lexington, MA, 2Irvine Sensors Corporation, Costa Mesa, MA, 3Forza Silicon, Pasadena, CA |
| 15:40-16:00 | Break |
| Session 04 | Analysis and trends Session Chair: Edoardo Charbon, Delft Univ., The Netherlands |
| 16:00-16:15 |
Analysis of Dark Current in 4-Transistor CMOS Imager Pixel with Negative Transfer-gate bias Operation Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami. Toshiba Corporation, Japan |
| 16:15-16:30 |
Model-Free Power Spectral Density Estimation for Low-Light Level CMOS Imaging Sensors Radu Ispasoiu, José Camara and Boyd Fowler. Fairchild Imaging, Inc., USA |
| 16:30-16:45 |
Trends in Consumer CMOS Image Sensor Manufacturing R. Fontaine. Chipworks, Canada |
| Session 05 16:45-18:00 | Poster flash presentations Session Chair: Lindsay Grant, ST Microelectronics, UK |
| P1 |
Reduction of Band-to-band Tunneling in Deep-submicron CMOS Single Photon Avalanche Photodiodes Robert K. Henderson1, Justin Richardson1,2, Lindsay Grant2. 1 The University of Edinburgh, Institute for Integrated Micro and Nano Systems, UK; 2STMicroelectronics Imaging Division, UK |
| P2 |
Flexible binning structure for CCD color imagers Jan Bosiers, Harry van Kuijk, Agnes Kleimann, Inge Peters, Frank Polderdijk. DALSA Professional Imaging, The Netherlands |
| P3 |
CMOS image sensor with two-shared pixel and staggered readout architecture J. Bogaerts, G. Meynants, G. Lepage, G. Vanhorebeek, B. Ceulemans, K. Ruythooren. CMOSIS nv, Belgium |
| P4 |
Effects of Negative Bias Operation and Optical Stress on Dark Current Takashi Watanabe1, Jong-Ho Park1, Satoshi Aoyama1, Keigo Isobe1, Shoji Kawahito1,2. 1Brookman Technology, Inc., Japan; 2Research Institute of Electronics, Shizuoka University, Japan |
| P5 |
X-ray image sharpening by coincidence detection B. Dierickx1,2, B. Dupont1, A. Defernez1. 1Caeleste CVBA, Belgium; 2Vrije Universiteit Brussel (VUB), Belgium |
| P6 |
An advanced CMOS Sensor in a novel quadruple well process (INMAPS) for 100% Fill Factor and Full CMOS Pixels J. Ballin2, R. Coath1, J. Crooks1, P. Dauncey2, A.-M. Magnan2, Y. Mikami3, O. Miller3, M. Noy2, V. Rajovic3, M. Stanitzki1, K. Stefanov1, R. Turchetta1, M. Tyndel1, E. G. Villani1, N. Watson3, J. Wilson3. 1 Rutherford Appleton Laboratory, UK;2Department of Physics, Blackett Laboratory, Imperial College London, UK; 3School of Physics and Astronomy, University of Birmingham, UK |
| P7 |
Validated Dark Current Spectroscopy on a per-pixel basis in CMOS image sensors Eric A. G. Webster1, Robert Nicol2, Lindsay Grant2, David Renshaw1. 1School of Engineering & Electronics, University of Edinburgh, UK; 2STMicroelectronics (R&D) Ltd., UK |
| P8 |
Investigating the Ageing Effects on Image Sensors Due to Terrestrial Cosmic Radiation Gayathri G. Nampoothiri1, Albert J. P. Theuwissen1, 2. 1Delft University of Technology, The Netherlands; 2Harvest Imaging, Belgium BEST POSTER AWARD 2009 IISW |
| P9 |
A High Speed Pipelined Snapshot CMOS image sensor with 6.4 Gpixel/s data rate Bart Cremers, Mukund Agarwal, Tom Walschap, Rajiv Singh, Tomas Geurts. Cypress Semiconductor, Belgium |
| P10 |
400×400 pixel image sensor for endoscopy in 1.7mm2 CSP Package Bram Wolfs, Cedric Esquenet, Walter Iandolo. Cypress Semiconductor, Belgium.Presenter: Tomas Geurts |
| P11 |
Column Fixed Pattern Noise Suppression with STI profile control in 1.75um Pixel CMOS Image Sensor Hoon Jang, Tae Gyu Kim , So Eun Park, Joon Hwang. Dongbu HiTek Co., Ltd., Korea |
| P12 |
A small footprint, streaming compliant, versatile wavelet compression scheme forcameraphone imagers L. Alacoque1, L. Chotard2, M. Tchagaspanian1, J. Chossat2. 1CEA LETI-MINATEC/SCME, Grenoble, France; 2STMicroelectronics, Grenoble, France |
| P13 |
A Modeling and Evaluation of the Random Telegraph Signal Noise on a CMOS Image Sensor in Motion Pictures Deng Zhang, Hiroaki Ammo1, Jegoon Ryu, Hirofumi Sumi1, Toshihiro Nishimura. Graduate school of Information, Production and Systems, WASEDA University; 1Sony Corporation, Japan |
| P14 |
Synchronous and Asynchronous Detection of Ultra-Low Light Levels Christian Lotto1,3, Peter Seitz2,3. 1CSEM SA, Photonics Division, Switzerland; 2CSEM SA, Nanomedicine Division, Switzerland; 3EPFL STI IMT-NE, Federal Inst. of Technology, Switzerland |
| P15 |
From photons to electrons: a complete 3D simulation flow for CMOS image sensor Axel Crocherie, Pierre Boulenc, Jérôme Vaillant, Flavien Hirigoyen, Didier Hérault,Clément Tavernier. STMicroelectronics, France |
| P16 |
Limitations to the frame rate of high speed image sensors G. Meynants, G. Lepage, J. Bogaerts, G. Vanhorebeek, X. Wang. CMOSIS nv, Belgium |
| P17 |
A 4k@15,000 LPs High-Accuracy CMOS Linear Sensor Chip with Programmable Gain and Offset and Embedded Digital Correction Francisco Jiménez-Garrido1, Rafael Domínguez-Castro1,2, Fernando Medeiro 1,2, Alberto García, Cayetana Utrera, Rafael Romay, Angel Rodríguez-Vázquez.1AnaFocus (Innovaciones Microelectrónicas S.L.), Spain; 2IMSE-CNM/CSIC and Universidad de Sevilla, Spain |
| P18 |
CMOS Image Sensor Sensitivity Improvement via Cumulative Crosstalk Reduction Igor Shcherback1, Elad Gan1, Lior Blockstein2, Orly Yadid-Pecht1,2. 1Pixel-Scan, Ltd, Israel; 2The VLSI Systems Center, Ben-Gurion University, Israel |
| P19 |
CMOS image sensor architecture for high speed sparse image content readout A. Dupret1, B. Dupont2, M. Vasiliu1, B. Dierickx2,3, A. Defernez2. 1Institutd’Electronique fondamentale, Université Paris Sud , France; 2Caeleste CVBA, Belgium; 3Vrije Universiteit Brussel (VUB), Belgium |
| P20 |
CMOS Active Pixel Detectors For Radiography Michael G. Farrier1, Thorsten Graeve Achterkirchen1, Gene P. Weckler1, and J. T. Bosiers2. 1Rad-icon Imaging Corp., USA. 2DALSA Professional Imaging, The Netherlands. |
| P21 |
An analog counter architecture for pixel-level ADC Arnaud Peizerat, Michael Tchagaspanian, Christophe Mandier, Bertrand Dupond, CEA/LETI, Grenoble, France |
| P22 |
Enhancement of Wide Dynamic Range CCD with 862MHz Data Rate Kasey Boggs, Richard Bredthauer and Greg Bredthauer. Semiconductor Technology Associates, Inc., USA |
| P23 |
Ultra small digital image sensor for endoscopic applications Martin Wäny, Stephan Voltz, Fabio Gaspar, Lei Chen. AWAIBA Lda |
| P24 |
Comparison of Several Ramp Generator Designs for Column-Parallel Single Slope ADCs Yibing (Michelle) Wang , Sang-Soo Lee, Kwang Oh Kim1. Hynix Semiconductor America, Inc;,1Hynix Semiconductor, Korea |
| 18:00-18:45 | Poster Viewing |
| 19:00-21:00 | Dinner |
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Saturday March 27, 2009
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| Session 06 | Charge-Coupled Devices Session Chair: Junichi Nakamura, Aptina Imaging, Japan |
| 08:30-09:10 |
Invited Presentation – III Backside Illuminated Image Sensors manufactured with Gradated Double Epitaxial Layers: an Application to a High-speed High-sensitivity Image SensorT. G. Etoh12, T. Hayashida2, H. Maruyama2, T. Arai2, N. Uchiyama3 and T. Sakamoto3, 1Kinki University, Japan, 2NHK, Japan, 3Hamamatsu Photonics, Japan |
| 09:10-09:25 |
Very-low Dark Current in FF-CCDs I. M. Peters, E. W. Bogaart, W. Hoekstra, A. C. M. Kleimann, J. T. Bosiers. DALSA Professional Imaging, The Netherlands |
| 09:25-09:40 |
Design and Characterization of Submicron CCDs in CMOS Keith Fife, Abbas El Gamal, H.-S. Philip Wong. Department of Electrical Engineering, Stanford University, USA |
| 09:40-09:55 |
A 2/3-inch Low Noise HDTV FT CCD-Imager for 1080i180, 1080ip90 and 720p120 Scanning at Constant Image Diagonal Peter Centen1, Holger Stoldt2, Jan Visser3, Jan T. Bosiers2. 1 Grass Valley, TheNetherlands, 2DALSA Professional Imaging, The Netherlands; 3NIKHEF, The Netherlands |
| 09:55-10:10 |
High saturation output 1.55mm square pixel IT-CCD with metal wiring line structure in a pixel Takeshi Takeda, Yoshiaki Kitano, Shinji Miyazawa, Junji Yamane, Keita Suzuki,Kunihiko Hikichi, Kaori Tai, Kotaro Harazono1, Shogo Numaguti2, Yoshinori Uchida, Masao Kimura, Mitsuru Sato, Hideo Kanbe, Nobuhiro Karasawa. Semiconductor Business Group, Sony Corporation; 1Sony Semiconductor Kyusyu Corporation; 2Sony LSI Design Inc., Japan |
| 10:10-10:25 |
High Speed Impactron CCD Line Sensor with Color Sensing Capability Izumi Kobayashi1, Jaroslav Hynecek2, 1Texas Instruments Japan LTD.; 2Isetex, Inc., USA |
| 10:25-10:35 |
Break
|
| Session 07 | Various imager design topics – I Session Chair: Jaroslav Hynecek, Isetex, TX, USA |
| 10:35-10:50 |
Characterization of In-Pixel Buried-Channel Source Follower with Optimized Row Selector in CMOS Image Sensors and REVISED AFTER IISW Yue Chen, Xinyang Wang, Adri J. Mierop, Albert J.P. Theuwissen. Electronic Instrumentation Lab, Delft University of Technology, Netherlands. |
| 10:50-11:05 |
A Monolithic Ge-on-Si CMOS Imager for Short Wave Infrared B. Ackland, C. Rafferty, C. King, I. Aberg, J. O’Neill, T. Sriram, A. Lattes, C. Godek, S. Pappas. NoblePeak Vision, USA |
| 11:05-11:20 |
Integrated Polarization Image Sensor for Cell Detection Viktor Gruev1, Jan Van der Spiegel2, Nader Engheta2. 1Washington University in St. Louis, Missouri, USA; 2University of Pennsylvania, Pennsylvania, USA |
| 11:20-11:35 |
Polarization-analyzing CMOS image sensor with embedded wire-grid polarizers Takashi Tokuda, Hirofumi Yamada, Hiroya Shimohata, Kiyotaka, Sasagawa, Jun Ohta. Graduate School of Materials Science, Nara Institute of Science and Technology, Japan |
| 11:35-11:50 |
Retinal stimulator embedded with light-sensing function in distributed microchip architecture for subretinal implantation Jun Ohta1, Takashi Tokuda1, Kohei Hiyama1, Shigeki Sawamura1, Kiyotaka, Sasagawa1, Kentaro Nishida2, Yoshiyuki Kitaguchi2, Motohiro Kamei2, Takashi Fujikado2, Yasuo Tano2. 1Graduate School of Materials Science, Nara Institute of Science and Technology, Japan; 2Graduate School of Medicine, Osaka University, Japan |
| 11:50-12:05 |
4.5 μm Pixel Pitch 154 ke- Full Well Capacity CMOS Image Sensor Koichi Mizobuchi1, Satoru Adachi1, Hirokazu Sawada1, Katsumi Ohta1, HiromichiOshikubo1, Nana Akahane2, Shigetoshi Sugawa2, 1Texas Instruments, Ibaraki, Japan,2Graduate School of Engineering, Sendai, Japan |
| 12:05-13:30 | Lunch |
| 13:30-18:00 | Social event/excursion |
| 18:00-18:45 | Poster Viewing |
| 19:00-21:00 | Gala Dinner/WKA/ Best Poster Award |
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Sunday March 28, 2009
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| Session 08 | 3D Range Imaging Session Chair: Koichi Mizobuchi, Texas Instruments Japan |
| 08:30-09:10 |
Invited Presentation – IV
Image Sensor Technologies for 3D Time-of-flight Range Imaging |
| 09:10-09:30 |
High Speed Dual Port Pinned-photodiode for Time-Of-Flight Imaging Cédric Tubert1,3, Laurent Simony1, François Roy2, Arnaud Tournier2, Luc Pinzelli2, Pierre Magnan3. 1STMicroelectronics Grenoble, France; 2STMicroelectronicsCrolles, France; 3ISAE/CIMI, France |
| 09:30-09:45 |
Ultra High Speed 3-D Image Sensor Shingo Mandai1, Toru Nakura2, Makoto Ikeda2 and Kunihiro Asada2. 1Dept. of Electronic Engineering, University of Tokyo, Japan; 2VLSI Design and Education Center(VDEC), University of Tokyo, Japan |
| 09:45-10:00 |
A 32×32 50ps Resolution Time to Digital Converter Array in 130nm CMOS for Time Correlated Imaging. Justin Richardson1,2, Richard Walker1,2, Lindsay Grant2, David Stoppa3, FaustoBorghetti3, Edoardo Charbon4,5, Marek Gersbach4,5, Robert K. Henderson1. 1 The University of Edinburgh, Edinburgh, UK; 2STMicroelectronics, Imaging Division, Edinburgh, UK; 3Fondazione Bruno Kessler, Trento, Italy; 4EPFL, Lausanne, Switzerland; 5TU Delft, Delft, The Netherlands; |
| 10:00-10:15 |
Random Telegraph Signal in Single-Photon Avalanche Diodes Mohammad Azim Karami1, Cristiano Niclass2, Edoardo Charbon1,2, 1Faculty of EEMSC, Delft University of Technology, Netherlands; 2Department of ECE, EcolePolytechnic Fédérale Lausanne (EPFL), Switzerland |
| 10:15-10:30 |
A Low Dark Count Single Photon Avalanche Diode Structure Compatible with Standard Nanometer Scale CMOS Technology Justin Richardson1,2, Lindsay Grant2, Robert K. Henderson1. 1The University of Edinburgh, Institute for Integrated Micro and Nano Systems, UK;2STMicroelectronics Imaging Division, UK |
| 10:30-10:45 | Break |
| Session 09 | High energy particle detection Session Chair: Bart Dierickx, Caeleste, Belgium |
| 10:45-11:00 |
Characterization of 3D integrated APS for X-ray detection G. Prigozhin1 V. Suntharalingam2, D. Busacker2, R. Foster1, S. Kissel1, B. LaMarr1, A. Soares2 M. Bautz1. 1Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, USA; 2Lincoln Laboratory, Massachusetts Institute of Technology, USA |
| 11:00-11:40 |
Invited Presentation – V Flat-Panel Imaging Arrays for Digital Radiography Timothy Tredwell1, Jeff Chang1, Jackson Lai1, Greg Heiler1, John Yorkston1, Jin Jang2, Jae Won Choi2, Jae Ik Kim2, Seung Hyun Park2, Jun Hyuk Cheon2, SauabhSaxena2, Won Kyu Lee2, Arokia Nathan3, Eric Mozdy4, Sung Eun Ahn4, Carlo KosikWilliams4, Jeffery Cites4, Chuan Che Wang4. 1Carestream Health, Rochester, NY,2Advanced Display Research Center, Kyung Hee University, Seoul, Korea, 3London Center for Nanotechnology, University College, London, 4Corning Incorporated, NY, USA |
| 11:40-12:00 |
Reset noise reduction architectures for the detection of charged particles R. Turchetta1, T. Anaxagoras1,2, J. Crooks1, A. Godbeer1, N. Allinson2, T. Pickering1, A. Blue3, D. Maneuski3, V. O’Shea3. 1 Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), U.K; 2Sheffield University, Department of Electronic and Electrical Engineering, UK; 3University of Glasgow, Department of Physics and Astronomy, UK |
| 12:00-13:30 | Lunch |
| Session 10 |
Invited Presentation, High energy particle detection and Large format arrays Session Chair: Pierre Magnan, ISAE/CIMI, Toulouse, France |
| 13:30-13:45 |
Optoelectrical Performance Evolution of CMOS Image Sensors Exposed to Gamma Radiation V. Goiffon, M. Estribeau, P. Magnan. ISAE, Toulouse, France |
| 13:45-14:00 |
A radiation tolerant 4T pixel for space applications Manuel Innocent. Cypress Semiconductor, Belgium. |
| 14:00-14:15 |
Large-Format Medical X-Ray CMOS Image Sensor for High Resolution High Frame Rate Applications R. Reshef, T. Leitner, S. Alfassi, E. Sarig, N. Golan, O. Berman, A. Fenigstein, H. Wolf, G. Hevel, S. Vilan and A. Lahav. Tower Semiconductor LTD, Israel |
| 14:15-14:30 |
A wafer-scale CMOS APS imager for medical X-ray applications L. Korthout, D.Verbugt, J.Timpert, A.Mierop, W.de Haan, W.Maes, J. de Meulmeester, W. Muhammad, B. Dillen, H. Stoldt, I. Peters, E. Fox. DALSA Professional Imaging, The Netherlands |
| 14:30-14:45 |
Progress in 1.25-inch Digital-Output CMOS Image Sensor Developments for UDTV Application I. Takayanagi, S. Osawa, T. Bales, K. Kawamura, N. Yoshimura, K. Kimura, H. Sugihara, E. Pages, A. Andersson, S. Matsuo, T. Oyama, M. Haque, H. Honda, T. Kawaguchi, M. Shoda, B. Almond1, P. Pahr2, S. Desumvila1, D. Wilcox1, Y. Mo3, J. Gleason3, T. Chow3, J. Nakamura. Aptina Japan, LLC.; 1 Aptina UK, Ltd.; 2 Aptina Norway, AS.; 3Aptina LLC, USA |
| 14:45-15:00 |
A 2.5 inch, 33Mpixel, 60 fps CMOS Image Sensor for UHDTV Application Steven Huang, Takayuki Yamashita1, Yibing Wang, Kai Ling Ong, Kohji Mitani1,Ryohei Funatsu1, Hiroshi Shimamoto1, Lin Ping Ang, Loc Truong, BarmakMansoorian. Forza Silicon Corporation, USA; 1NHK Science and Technical Laboratories |
| 15:00-15:40 |
Invited Presentation – VI Image artifacts caused by pixel bias cells in CMOS imagers targeted for mobile applications Matthew Purcell, ST Microelectronics, U.K. |
| 15:40-16:00 |
Break
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| Session 11 |
Various imager design topics – II Session Chair: Renato Turchetta, Rutherford Appleton Laboratory, Didcot, U.K. |
| 16:00-16:15 |
A 1/3.4-inch 2.1-Mpixel 240-frames/s CMOS Image Sensor 1Seunghyun Lim, 1Jimin Cheon, 1Youngcheol Chae, 2Wunki Jung, 2Dong-Hun Lee,2Seogheon Ham, 1Dongsoo Kim, and 1Gunhee Han. 1Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea. 2System LSI Division, Semiconductor Business, Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea |
| 16:15-16:30 |
Noise Reduction Effects of Column-Parallel Correlated Multiple Sampling and Source-Follower Driving Current Switching for CMOS Image Sensors Shoji Kawahito, Sungho Suh, Takuma Shirei, Shinya Itoh, Satoshi Aoyama1. Research Institute of Electronics, Shizuoka University; 1Brookman Technology, Inc., Japan; |
| 16:30-16:45 |
12Mpixel snapshot shutter CMOS image sensor with 5.5um pixels operating @33fps with high shutter efficiency Yannick De Wit, John Compiet, Bartosz Banachowicz, Vladimir Korobov, Gert Schippers. Cypress Semiconductor, Belgium |
| 16:45-17:00 |
Implementing Global Shutter in a 4T Pixel A. Krymski. Alexima, USA |
| 17:00-17:15 |
Two-Stage Charge Transfer Pixel Using Pinned Diodes for Low-Noise Global Shutter Imaging Keita Yasutomi1, Shinya Itoh1, Shoji Kawahito1, Toshihiro Tamura2. 1Research Institute of Electronics, Shizuoka University, Japan; 2Photron Ltd., Japan |
| 17:15-17:30 |
Design of photo-electron barrier for the Memory Node of a Global Shutter pixel based on a Pinned Photodiode Assaf Lahav1, Adi Birman, Muriel Cohen, Tomer Leitner, Amos Fenigstein. 1 Tower Semiconductor LTD, Israel |
| 17:30-17:45 |
Wide Dynamic Range Low Light Level CMOS Image Sensor Boyd Fowler, Chiao Liu, Steve Mims, Janusz Balicki, Wang Li, Hung Do, Paul Vu.Fairchild Imaging, Inc., USA |
| 17:45-18:00 |
A 1280×960 3.75um pixel CMOS imager with Triple Exposure HDR Johannes Solhusvik1, Sohrab Yaghmai1, Arthur Kimmels1, Christian Stephansen1, Alf Storm1, Jenny Olsson1, Anders Rosnes1, Tore Martinussen1, Trygve Willassen1, Per Olaf Pahr1, Siri Eikedal1, Steve Shaw2, Ranjit Bhamra2, Sergey Velichko3, Dan Pates3, Sachin Datar3, Scott Smith3, Lingtao Jiang3, Dave Wing3, Ajaya Chilumula3,1Aptina Imaging, Oslo, Norway,2Aptina Imaging, Bracknell, UK, 3Aptina Imaging, San Jose, CA, USA |
| 18:00-18:05 | Closing remarks Nobukazu Teranishi – IISW Steering Committee and Host in 2011 |
| 19:00-21:00 | Dinner |