| Session 01 | Stacking and Small Pixels |
| Session chairs: Yusuke Oike (Sony) Dun-Nien Yaung (TSMC) | |
| R01 | The State-of-the-Art of Smartphone Imagers |
|
Ray Fontaine, TechInsights Inc., Canada
|
|
| R02 |
A new 0.8μm CMOS image sensor with low RTS noise and high full well capacity |
|
Takuma Hasegawa2 , Kazufumi Watanabe1, Y. Jay Jung1 , Nagataka Tanaka2 , Takashi Nakashikiryo2 , Wu-Zang Yang3 , Alan Chih-Wei Hsiung1 , Zhiqiang Lin1 , Sohei Manabe1 , Vincent C. Venezia 1 , Lindsay A. Grant 1 1 OmniVision Technologies, Santa Clara, CA, USA 2 OmniVision Technologies Japan, Kanagawa, Japan 3 OmniVision Technologies Taiwan, Hsinchu, Taiwan |
|
| R03 |
A Small-size Dual Pixel CMOS Image Sensor with Vertically Broad Photodiode of 0.61 μm pitch |
|
Jungbin Yun1 , Kyungho Lee1 , Junghyung Pyo1 , Kyungduk Lee1 , Seungjoon Lee1 , Masato Fujita1 , Kyoung Mok Son2 , Junseok Yang2 , Younguk Song2 , Hyejung Kim2 , Younghwan Park1 , Sungsoo Choi1 , Eun Sub Shim1 , Jeongjin Cho1 , Seungjin Lee1 , Seogky Yoon1 , Sangil Jung2 , Takashi Nagano1 , Chang-Rok Moon1 , and Yongin Park1 1 System LSI Division, Samsung Electronics Co., Ltd 2 Foundry Division, Samsung Electronics Co., Ltd |
|
| R04 |
World first mass productive 0.8μm pixel size image sensor with new optical isolation technology of to minimize optical loss for high sensitivity |
|
Yunki Lee1 , Jonghoon Park1 , Bumsuk Kim1 ,Jungsaeng Kim1 , Hyungeun Yoo1 , Seungjoo Nah2 , Donghyuk Park1 , Taesung Lee1 , Bomi Kim1 , Dongmin Keum1 , Heegeun Jeong2 , Heesang Kwon1 , Myoungsun Kim2 , Sangil Jung2 , Yitae Kim1 , Changrok Moon1 and Yongin Park1 1 System LSI Division, Samsung Electronics Co., Ltd 2 Foundry Division, Samsung Electronics Co., Ltd. |
|
| R05 |
Digital Pixel Image Sensors with Linear and Wide-Dynamic-Range Response Developed by Pixel-Wise 3-D Integration |
|
Masahide Goto1 , Yuki Honda1 , Toshihisa Watabe1 , Kei Hagiwara1 , Masakazu Nanba1 , Y oshinori Iguchi 1 , T akuya Saraya 2 , Masaharu Kobayashi 2 , Eiji Higurashi 3 , Hiroshi T oshiyoshi 2 , and T oshiro Hiramoto 2 1 NHK Science and Technology Research Laboratories, Tokyo, Japan, 2 The University of Tokyo, Tokyo, Japan, 3 National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan |
|
| R06 |
0.8μm-pitch CMOS Image Sensor with Dual Conversion Gain Pixel for Mobile Applications |
|
Dongyoung Jang, Donghyuk Park, Seungwon Cha, Heesang Kwon, Mihye Kim, Seungwook Lee, Haewon Lee, Seonok Kim, Nakyung Lee, Jinhwa Han, Daehyung Lee, Kwanyoung Oh, Minseong Lee, Ina Yun, Hana Lee, Seokyong Hong, Yitae Kim, Chang-Rok Moon and Yongin Park System LSI Division, Samsung Electronics Co., Ltd, Yongin-city, Gyeonggi-do, Korea |
|
| Session 02 | Noise |
| Session chair: Bumsuk Kim (Samsung) | |
| R07 | Modelling Measured 1/f Noise in Quanta Image Sensors (QIS) |
|
Wei Deng1 (Student), Dakota Starkey1 (Student), Jiaju Ma2 and Eric R. Fossum1 1 Thayer School of Engineering, Dartmouth College, Hanover, NH, USA 2 Gigajot Technology, Inc. Pasadena, CA, USA |
|
| R08 |
Several Process Techniques & Pixel Source Follower Schemes to improve the Pixel Temporal Noise |
|
ManLyun Ha, DongJun Oh, SoEun Park, WooSung Choi, HanGyu Lee, ByeungYeup Lee, Dongil Kim, ChangHun Han, YongChan Kim, Juil Lee, and YoonJong Lee CIS Process Development Team, DB HiTek EumSung, Choongbuk, Korea |
|
| R09 |
Active optical sensing with randomized coded light for intentional interference tolerance |
|
Unghyun Kim, Makoto Ikeda Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Japan |
|
| R10 |
Identifying the Sources of Random Telegraph Noises in Pixels of CMOS Image Sensors Updated version: Fig. 7(c) and 7(d) corrected |
|
Calvin Yi-Ping Chao1, Meng-Hsu Wu1, Shang-Fu Yeh1, Kuo-Yu Chou1, Honyih Tu1, Chi-Lin Lee1, Yin Chin1, Philippe Paillet2, and Vincent Goiffon3 1Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan 2CEA, DAM, Arpajon, France 3ISAE-SUPAERO, Université de Toulouse, France |
|
| R11 |
CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on The Dark Current |
|
Y.Sacchettini1,2, J.-P. Carrère1, R. Duru1, J.-P. Oddou1,V.Goiffon2 and P. Magnan2 1STMicroelectronics, France 2ISAE-SUPAERO, Université de Toulouse, France |
|
| R12 |
Random Telegraph Noise Caused by MOSFET Channel Traps and Variable Gate Induced Leakage with Multiple Sampling Readout |
|
Shang-Fu Yeh, Meng-Hsu Wu, Chih-Lin Lee, Chin Yin, Kuo-Yu Chou, Calvin Yi-Ping Chao Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan |
|
| Session 03 | Poster Presentations |
| Session chair: Edoardo Charbon (EPFL) | |
| P01 |
Study of Multilayer FEP Characteristics Using Second Harmonic Generation Measurement |
|
Sung-Kun Park, Ming Lei1 , Youngwoong Do, Dong-Hyun Kim, Jae-Hyun Kim, Hyungbok Choi2 , Seung-Han Lee2 , Kyung-do Kim, Heon-Joon Kim, Sung-Bo Hwang, Hoon-Sang Oh, Sung-Joo Hong and Kyung-Dong Yoo3 SK hynix, Technology Development Group, Korea 1 Femtometrix Inc., USA 2 Wonik-IPS Inc., Korea 3 Hanyang University, Nanoscale Semiconductor Engineering, Korea |
|
| P02 |
A Reconfigurable 40nm CMOS SPAD Array for LiDAR Receiver Validation |
|
Sarrah M. Patanwala1,2 , Istvan Gyongy1 , Neale A.W. Dutton2 , Bruce R. Rae2 , Robert K. Henderson 1 1 School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, UK, EH9 3FF 2 STMicroelectronics Imaging Division, 1 Tanfield, Edinburgh, UK |
|
| P03 |
A 110nm CMOS process with fully depleted high resistivity substrate for NIR, X-ray and charged particle imaging |
|
Lucio Pancheri1,2, J. Olave3,4, S. Panati3,4, A. Rivetti3, F. Cossio3,4, M. D. Da Rocha Rolo3, N. Demaria3, P. Giubilato5,6, D. Pantano5,6, S. Mattiazzo5,6 1Università di Trento, Trento, Italy, 2TIFPA, Trento, Italy, 3INFN Torino, Torino, Italy, 4Politecnico di Torino, DET, Torino, Italy, 5Università di Padova, Padova, Italy, 6INFN Padova, Padova, Italy |
|
| P04 |
Intrinsic Si Quantum Efficiency, Responsivity, and Other Parameters Temperature Dependence for BSI Image Sensors |
|
Sergey Velichko1 , Bob Gravelle1 , Daniel Tekleab2 , Michael Guidash2 , Scott Johnson1 , Minseok Oh2 , Hung Chih Chang2 1 ON Semiconductor, Meridian, ID, USA, 2 ON Semiconductor, Santa Clara, CA, USA |
|
| P05 | Electrostatic surface passivation for p-type BSI image sensors |
|
1,2 T.Dalleau, 1 R.Duru, 1 D.Benoit, 1 A.Suler, 1,3 C.Chaton, 1 F.Roy, 2 G.N.Lu 1 STMicroelectronics, 850 rue J. Monnet BP16, 38926 Crolles Cedex, France 2 Institut des Nanotechnologies de Lyon, Univ. Claude Bernard Lyon 1, 69622 Villeurbanne, France 3 CEA Leti, 17 Avenue des martyrs, 38054 Grenoble, France |
|
| P06 |
Floating Diffusion Dark Current and Dark Signal Non-Uniformity Reduction for High Dynamic Range Overflow Collection Pixels in High Temperature Applications |
|
M. Guidash1 , M. Oh1 , D. Collins1 , R. Mauritzson2 , D. Tekleab1 , W. Xu1 , S. Nicholes2 ON Semiconductor; 1 Santa Clara, CA, 2 Meridian, ID |
|
| P07 |
A large-area a-IGZO 256×256 imager using a current-mode transimpedance readout for mammography applications |
|
Florian De Roose1 , Sandro Tedde2 , Kris Myny1 , Siavash Ardekani1 , Manoj Nag1 , Marc Ameys1 , Albert van Breemen3 , Jan-Laurens van der Steen3 , Roy Verbeek3 , Hylke Akkerman3 , Gerwin Gelinck3 , Tim Piessens4 , Jan Genoe1,5 , Wim Dehaene1,5 , Soeren Steudel1 1 imec, Leuven, Belgium, 2 Siemens Healthcare, Erlangen, Germany, 3 Holst Centre / TNO, Eindhoven, The Netherlands, 4 ICsense, Leuven, Belgium, 5 KULeuven, Leuven, Belgium |
|
| P08 |
Parameter-free Simulation of Photon-detection Probability in CMOS Single-photon Avalanche Diodes |
|
Chin-An Hsieh and Sheng-Di Lin Institute of Electronics, National Chiao Tung University, Taiwan |
|
| P09 |
CMOS Single-photon Avalanche Diodes using Gated Reset Circuit with On-chip Pulse Width Modulation |
|
Chun-Chang Hsu, Chia-Ming Tsai, and Sheng-Di Lin Institute of Electronics, National Chiao Tung University, Taiwan |
|
| P10 | Fast Charge Transfer in 100μm long PPD Pixels |
|
Ajit Kumar Kalgi, Arne Crouwels, Bart Dierickx, Walter Verbruggen, Dirk Van Aken Caeleste, Mechelen, Belgium |
|
| P11 |
Long Distance Ranging Performance of Gen3 LiDAR Imaging System based on 1×16 SiPM Array |
|
Salvatore Gnecchi, Colin Barry, Stephen Bellis, Steve Buckley, Carl Jackson ON Semiconductor, Cork, Ireland |
|
| P12 |
A Low Noise Single-Slope ADC with Signal-Dependent Multiple Sampling Technique |
|
Sanguk Lee, Seunghyun Lee, Bumjun Kim, Seong-Jin Kim Ulsan National Institute of Science and Technology, South Korea |
|
| P13 |
Pixel with nested photo diodes and 120 dB single exposure dynamic range |
|
Manuel Innocent, Angel Rodriguez, Deb Guruaribam, Muhammad Rahman, Marc Sulfridge, Swarnal Borthakur, Bob Gravelle, Takayuki Goto, Nathan Dougherty, Bill Desjardin, David Sabo, Marko Mlinar and Tomas Geurts ON Semiconductor, Belgium/USA |
|
| P14 |
Fully Depleted SiPMs Optimized for Automotive NIR ToF in 180nm Technology |
| Amos Fenigstein and Tomer Leitner TowerJazz, Migdal Ha’emek, Israel | |
| P15 |
Pixel Design Utilized P-type Substrate to Achieve Superior NIR Sensitivity and Resolution with Low Dark Noise |
|
Takanori Usuki, Masayuki Saeki, Takefumi Konishi, Hiroshi Iwata, Kenichi Nagai, and Toshio Yoshida Semiconductor Business Unit, Sharp Fukuyama Semiconductor Co., Ltd., Hiroshima, Japan |
|
| P16 |
A 132 by 104 10μm-Pixel 250μW 1kefps Dynamic Vision Sensor with Pixel-Parallel Noise and 107 Spatial Redundancy Suppression |
|
Chenghan Li1 , Luca Longinotti1 , Federico Corradi2 , Tobi Delbruck3 1 iniVation AG, 2 iniLabs GmbH, 3 INI UZHÐ, Zurich, Switzerland |
|
| P17 |
Extending Image Sensor Dynamic Range by Scene-aware Pixelwise-adaptive Coded Exposure |
|
Huifeng Ke1 , Navid Sarhangnejad1 , Rahul Gulve1 , Zhengfan Xia1 , Nikita Gusev1 , Nikola Katic1 , Kiriakos N. Kutulakos 2 , Roman Genov1 University of Toronto, Ontario , Canada. 1 Department of Electrical and Computer Engineering 2 Department of Computer Science |
|
| P18 |
A versatile 3D stacked vision chip with massively parallel processing enabling low latency image analysis |
|
Stéphane Chevobbe1, Maria Lepecq1, Karim Benchehida1, Mehdi Darouich1, Thomas Dombek1, Fabrice Guellec2, Laurent Millet2 1CEA LIST Department, CEA LIST, Centre CEA Saclay, Gif-sur-Yvette, France 2CEA LETI Department, CEA LETI, MINATEC Campus, Grenoble, France |
|
| P19 |
A 2-Mpixel CMOS Image Sensor with Device Authentication and Encryption Key Generation based on Physically Unclonable Function |
|
Shunsuke Okura 1 , Ryota Ishiki 2 , Syohei T akano 2 , Masayoshi Shirahat 2 , T akaya Kubota 2 , Mitsuru Shiozaki 2 , Kenichiro Ishikawa 1 , Isao T akayanagi 1 , and T akeshi Fujino 2 1 Brillnics Japan Inc., Tokyo, 2 Research Organization of Science and Engineering Ritsumeikan |
|
| P20 |
A high dynamic range, 1.9 Mpixel CMOS image sensor for X-ray imaging with in-pixel charge binning and column parallel ADC |
|
M. Sannino, A. Bofill-Petit, G. Pinaroli1 and R. Turchetta IMASENIC Advanced Imaging S.L., Barcelona, Spain 1 Also with Università degli Studi di Udine, Via delle Scienze 206, 33100 Udine, Italy |
|
| P21 |
A Novel Threshold Calibration Methodology for Quanta Image Sensors (QIS) |
|
Dakota A. Starkey1 , Jiaju Ma2 , Saleh Masoodian2 and Eric R. Fossum1 1 Thayer School of Engineering, Dartmouth College, Hanover, NH, USA 2 Gigajot Technology Inc., Pasadena, CA, USA |
|
| P22 | DUV Optimized CCD with Oxide Micro-lenses |
|
Joseph Summa, Tom Carducci , Brian Douglas, Eric Meisenzahl, Chris Parks, Dean Seidler, Scott Vanallen ON Semiconductor, Rochester, NY, USA |
|
| P23 |
Optimization of fully-depleted gated PPD pixel for achieving high-speed charge transfer |
|
Yun-Tzu Chang1,2, Pierre Boulenc2, Linkun Wu2, Maarten Rosmeulen2, Pol Van Dorpe1,2, Chris Van Hoof1,2, Andreas Süss2,3 1KU Leuven, ESAT, Leuven, Belgium 2Imec, Leuven, Belgium 3now at OmniVision Technologies, Santa Clara CA, USA |
|
| P24 | Large Format Global Shutter CMOS Image Sensors |
|
Tomas Geurts, Cedric Esquenet, Stefan Janssens, Anilkumar Prathipati, Mukesh Engla Rao Syam, John McCarten, Hung Doan ON Semiconductor, Belgium/USA |
|
| P25 |
Leakage Current Non-Uniformity and Random Telegraph Signal in CMOS Image Sensor Floating Diffusions used for In-Pixel Charge Storage |
|
Alexandre Le Roch∗,†,‡, Vincent Goiffon∗, Philippe Paillet‡, Jean-Marc Belloir†, Pierre Magnan∗, and Cedric Virmontois† ∗ISAE-SUPAERO, Universite ́ de Toulouse, Toulouse, France †Centre Nationale d’Etudes Spatiales (CNES), Toulouse, France ‡CEA, DAM, DIF, Arpajon, France |
|
| P26 |
Demonstration of Monolithically Integrated Pixel Sensors Based on Optical Back Biasing in 28nm node FDSOI Technology |
|
L.Kadura1 , O.Rozeau1 , A.Ayres1* , L.Grenouillet1 , N.Rambal1 , A.Chelnokov1 and M.Vinet1 1 Univ. Grenoble-Alpes, CEA, LETI, 17 Avenue des Martyrs, 38000 Grenoble, France * Now with STMicroelectronics, Crolles, France |
|
| P27 |
Imaging by single quantum processing: large pixels with brains or attopixels without? |
|
Rafael Ballabriga, Benedikt Bergmann, Michael Campbell, Vladimir Gromov, Erik Heijne, Thanushan Kugathasan, Xavier Llopart, Petr Manek, Tuomas Poikela, Stanislav Pospisil, Walter Snoeys, Viros Sriskaran, Lukas Tlustos and John Vallerga CERN EP Department, Switzerland Nikhef, Science Park 105, Amsterdam, Netherlands IEAP at Czech Technical University, Prague , Czech Republic Space Sciences Laboratory at the UC Berkeley, CA, USA |
|
| P28 |
SPAD array sensitivity improvement by diffractive microlensnhancement by diffractive microlens |
|
J. Vaillant∗, L. Masarotto∗, R. Paquet∗, V. Lecoutre∗, C. Pelle ∗́ , N. Moussy∗ and S. Jouan† ∗Univ. Grenoble Alpes, CEA, LETI, DOPT, LIS, F-38000 Grenoble †TR&D, STMicroelectronics, 850 rue Jean Monnet, F-38920 Crolles |
|
| P29 | SPAD based imaging of Cherenkov light in radiation therapy |
|
A Pétusseau1,2, P Bruza1, S Tisa3, S Gioux2, B W Pogue1 1Thayer School of Engineering, Dartmouth College, Hanover NH 03755 USA 2Telecom Physique Strasbourg, University of Strasbourg, Pôle API, 67400 Illkirch-Graffenstaden, France 3Micro Photon Devices srl, Via Stradivari 4, 39100 Bolzano, Italy |
|
| P30 |
A 2.5μm 9.5 Mpixel high framerate CMOS imager with hybrid output multiplexer and 58Gb/s datarate |
|
Jeroen Rotte1 , Arnaud Defernez1 , Rik Visser1 , Ruud van Ree1 , Juul van den Heijkant1 , Frank van der Weegen 1 , KlaasJan Damstra 1 , Peter Centen 1 , Adi Birman 2 , Dmitry Veinger 2 , Simon Louwsma3 1 Grass Valley a Belden brand, Breda, the Netherlands 2 TowerJazz, Migdal Haemek, Israel 3 Teledyne DALSA, Enschede, the Netherlands |
|
| P31 |
A CMOS Image Sensor with In-Pixel Temperature Sensors for Dark Signal Non-Uniformity Compensation |
|
Shuang Xie1 , Accel Abarca Prouza1 , Albert Theuwissen1,2 1 Electronic Instrumentation Laboratory Delft University of Technol 2 Harvest Imaging Bree, Belgium |
|
| P32 | High speed 25M global shutter image sensor with 2.5um pixel |
|
C. Ma1, Y. Guo1, Z. Li1, G. Xin1, H. Yin1, Y. Liu1, Y. Li1, Q. Zhou1, J. Bogaerts1,2, X. Wang1,2 1 Gpixel INC, Yingkoulu 588, Changchun, China |
|
| P33 |
Sensor Modeling and Benchmarking — A Platform for Sensor and Computer Vision Algorithm Co-Optimization |
| Andrew Berkovich, Chiao Liu Facebook Reality Labs | |
| Session 04 | Pixels & Optics |
| Session chair: Hidekazu Takahashi (Canon) | |
| R13 |
Back Side Illuminated, Fully Depleted, Pinned Trench Photo MOS for Imaging Applications |
|
Francois Roy1, Andrej Suler1,3, Jihane Arnaud1, Yvon Cazaux2, Laurent Montes3, Panagiota Morfouli3 1STMicroelectronics, 850 Rue Jean Monnet, BP. 16, 38921 Colles, France 2CEA Léti, 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France 3Grenoble INP, IMEP-LaHC, 3 Parvis Louis Néel, 38016 Grenoble, France |
|
| R14 |
Pixel Technology for Improving IR Quantum Efficiency of Backside-illuminated CMOS Image Sensor |
|
Jonghoon Park1 , Yunki Lee1 , Bomi Kim1 , Junsung Park1 , Eunju Yeom1 , Yunji Jung1 , Taehan Kim1 , Hansik Yoon2 , Yongho Kim2 , Jinsu Park2 , Bumsuk Kim1 , Chang-Rok Moon1 , and Yongin Park1 1 System LSI Division, Samsung Electronics Co., Ltd 2 Foundry Division, Samsung Electronics Co., Ltd. Yongin-city, Gyeonggi-do, Korea. |
|
| R15 |
An 8-tap CMOS Lock-in Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements |
|
Y uya Shirakawa 1 , Keita Y asutomi 2 , Keiichiro Kagawa 2 , Satoshi Aoyama 3 , and Shoji Kawahito2,3 1 Graduate School of Medical Photonics, Shizuoka University, Hamamatsu, 432-8011, Japan 2 Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan |
|
| R16 |
A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel with pyramid textured interfaces for diffraction |
|
Tatsuya Kunikiyo, Yotaro Goto, Fumitoshi Takahashi, Hidenori Sato, Takeshi Kamino, Koji Iizuka, Yutaka Akiyama and Tomohiro Yamashita Renesas Electronics Corporation 751 Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan |
|
| R17 |
Electrical characterization of the backside interface on BSI global shutter pixels with Tungsten-shield test structures on CDTI process |
|
C.Doyen1,2, S.Ricq1, P.Magnan2, O.Marcelot2, M.Barlas1, S.Place1 1STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France 2ISAE-SUPAERO, Université de Toulouse, 10 Avenue Edouard Belin, 31055 Toulouse, France |
|
| R18 |
Image Artifacts in Backside Illumination CMOS Image Sensors Associated with Electrostatic Charge |
|
Tom Frank, Tom Carducci, Bill Desjardin; ON Semiconductor, Rochester, NY, USA David Price, Rick Jerome, Jeff Gambino; ON Semiconductor, Gresham, OR, USA Rusty Winzenread; ON Semiconductor, Santa Clara, CA, USA Thad Smith; ON Semiconductor, Pocatello, ID, USA |
|
| Session 05 | Photon Counting |
| Session chair: Jiaju Ma (Gigajot) | |
| Invited Presentation-I | |
| I1 | Learning To See In The Dark |
| Vladlen Koltun, Intelligent Systems Lab at Intel, USA | |
| R19 | Photon-Counting Imaging with Multi-Bit Quanta Image Sensor |
|
Jiaju Ma, Yu-Wing Chung, Abhiram Gnanasambandam, Stanley H. Chan, Saleh Masoodian Gigajot Technology Inc., Pasadena, CA 91107, USA |
|
| R20 | Dual Layer 3D-Stacked High Dynamic Range SPAD Pixel |
|
Tarek Al Abbas1 , Danial Chitnis, Francesco Mattioli Della Rocca, and Robert K. Henderson School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh, UK, EH9 3FF 1 now with Sense Photonics, Edinburgh, UK |
|
| R21 |
Iterative Image Reconstruction for Quanta Image Sensor by using Variance-based Motion Estimation |
|
Kiyotaka Iwabuchi, Tomohiro Yamazaki and Takayuki Hamamoto Graduate School of Engineering, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585 Japan |
|
| R22 |
Crystalline Selenium-Based Stacked CMOS Image Sensor with in-Pixel Pulse-Generating Operation Suitable for Single-Photon Counting |
|
Shigeyuki Imura, Masahide Goto NHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157- 8510, Japan |
|
| R23 | High Dynamic Range Imaging using Quanta Image Sensors |
|
Abhiram Gnanasambandam1 , Jiaju Ma2 and Stanley H. Chan1 1 School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907 2 Gigajot Technology Inc., Pasadena, CA 91107, USA |
|
| Session 06 | Range Imaging |
| Session chair: Neale Dutton (ST Microelectronics) | |
| R24 |
A Direct TOF Sensor with In-Pixel Differential Time-to-Charge Converters for Automotive Flash LiDAR and Other 3D Applications |
|
Yibing M. Wang1,2 , Lilong Shi1 , Chunji Wang1 , Kwang Oh Kim1 , Ilia Ovsiannikov1,2 , and Sungwoo Hwang2 1 Samsung Semiconductor, Inc., Pasadena, CA, USA 2 Samsung Advanced Institute of Technology, Suwon, Korea |
|
| R25 | 1kFPS Time-of-Flight Imaging with a 3D-stacked CMOS SPAD Sensor |
|
Istvan Gyongy1 , Sam W. Hutchings1 , Max Tyler2 , Susan Chan2 , Feng Zhu2 , Robert K. Henderson1 , Jonathan Leach2 1 The University of Edinburgh, Institute for Integrated Micro and Nano Systems, Edinburgh, U.K. 2 Heriot-Watt University, Institute of Photonics and Quantum Sciences, Edinburgh, U.K. |
|
| R26 |
A Close-in LiDAR for Diffusive Media based on a 32 × 32 CMOS SPAD Image Sensor |
|
Scott Lindner1, 2, Chao Zhang3, Alexander Kalyanov2, Martin Wolf2, Claudio Bruschini1, Edoardo Charbon1 1EPFL, Neuchâtel, Switzerland 2University of Zurich, Zurich, Switzerland 3TUDelft, Delft, The Netherlands |
|
| R27 |
Analysis of a modular SPAD-based direct time-of-flight depth sensor architecture for wide dynamic range scenes in a LiDAR system |
|
Preethi Padmanabhan1, Chao Zhang2 and Edoardo Charbon1,2 1Advanced Quantum Architecture Laboratory (AQUA), EPFL, Neuchâtel, Switzerland 2Applied Quantum Architecture Laboratory (AQUA), Delft University of Technology, The Netherlands |
|
| R28 |
A Time-Resolved Lock-in Pixel Image Sensor Using Multiple-Tapped Diode and Hybrid Cascade 238 Charge Transfer Structure |
|
Shoji Kawahito1,2 , Keita Kondo2 , Keita Yasutomi1,2 , Keiichiro Kagawa1,2 1 Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan 2 Graduate School of Engineering, Shizuoka University, Hamamatsu, 432-8011, Japan |
|
| R29 |
Pandion: A 400 × 100 SPAD sensor for ToF LiDAR with 5 Hz median DCR and 11 ns mean dead-time |
|
Darek Palubiak1 , Salvatore Gnecchi1 , Carl Jackson1 , Silei Ma2 , Orit Skorka2 , Radu Ispasoiu2 1 SensL Division, Intelligent Sensing Group, ON Semiconductor, Cork, Ireland 2 Intelligent Sensing Group, ON Semiconductor, Santa Clara, USA |
|
| Session 07 | HDR |
| Session chair: Xinyang Wang (Gpixel) | |
| R30 |
A High Optical Performance 2.8μm BSI LOFIC Pixel with 120ke- FWC and 160μV/e- Conversion Gain |
|
Ken Miyauchi † , Shunsuke Okura † , Kazuya Mori † , Isao T akayanagi † , Junichi Nakamura † and Shigetoshi Sugawa‡ † Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo, 140-0013 Japan ‡ Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, 980-8579 Japan |
|
| R31 |
Sub-pixel Architecture of CMOS Image Sensor Achieving over 120 dB Dynamic Range with less Motion Artifact Characteristics |
|
T. Asatsuma1 , Y. Sakano1 , S. Iida1 , M. Takami2 , I. Yoshiba1 , N. Ohba2 , H. Mizuno1 , T. Oka1 , K. Yamaguchi1 , A. Suzuki1 , K. Suzuki1 , M. Yamada1 , Y. Tateshita1 , and K. Ohno1 1 Sony Semiconductor Solutions, Kanagawa, Japan 2 Sony Semiconductor Manufacturing, Kumamoto, Japan |
|
| R32 | A 1280×960 2.8μm HDR CIS with DCG and Split-Pixel Combined |
|
Johannes Solhusvik1 , Trygve Willassen1 , Sindre Mikkelsen1 , Mathias Wilhelmsen1 , Sohei Manabe2 , Duli Mao2 , Zhaoyu He2 , Keiji Mabuchi2 , and Takuma Hasegawa3 1 OmniVision Technologies, Oslo, Norway 2 OmniVision Technologies, Santa Clara, USA 3 OmniVision Technologies, Yokohama, Japan |
|
| R33 |
A scalable 12b-16b charge-domain multi-slope column ADC for HDR imagers with 86dB DR at 1μs conversion time |
|
Simon Louwsma1 , Rinus Boot1 , Paul Veldhorst1 , Jeroen Beijer1 , Martin Vasterink1 , Daniel Groeneveld1 , Jeroen Rotte2 , Rik Visser2 , Peter Centen2 1 Teledyne DALSA, Enschede, The Netherlands 2 Grass Valley, Breda, The Netherlands |
|
| R34 |
3.0um Backside illuminated, lateral overflow, high dynamic range, LED flicker mitigation image sensor |
|
Minseok Oh 1 , Steve Nicholes 2 , Maheedhar Suryadevara 3 , Lin Lin 1 , Hung-Chih Chang 1 , Daniel Tekleab1 , Michael Guidash1 , Shaheen Amanullah1 , Sergey Velichko2 , Manuel Innocent4 , Scott Johnson 2 1 ON Semiconductor, Santa Clara, CA, USA 2 ON Semiconductor, Meridian, ID, USA, 3 ON Semiconductor, Bangalore, India 4 ON Semiconductor, Mechelen ,Belgium |
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| Session 08 | High Speed |
| Session chair: Alex Krymski (Alexima) | |
| R35 |
Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with In-pixel Trench Capacitor Memory Array |
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Manabu Suzuki, Rihito Kuroda, and Shigetoshi Sugawa Graduate School of Engineering, Tohoku University 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, Japan 980-8579 |
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| R36 |
Multi-tap macro-pixel based compressive ultra-high-speed CMOS image sensor |
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Keiichiro Kagawa1 , Tomoya Kokado2 , Yuto Sato3 , Futa Mochizuki3 , Hajime Nagahara4 , T aishi T akasawa 1 , Keita Y asutomi 1 , Shoji Kawahito 1 1 Research Institute of Electronics, Shizuoka University 2 Graduate School of Integrated Science and Technology, Shizuoka University 3 Formerly, Shizuoka University 4 Institute for Datability Science, Osaka University |
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| R37 |
Evolution of BSI Multi-Collection-Gate Image Sensors -From Light-in-Flight imaging to Giga-fps Continuous Imaging |
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T. Goji Etoh1 , Nguyen Ngo1 , Anh Quang Nguyen3 , Yoshiyuki Matsunaga1 , Taeko Ando1 , Kohsei Takehara2 , and Kazuhiro Shimonomura1 1 Ritsumeikan University 2 Kindai University 3 Hanoi University of Science and Technology |
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| R38 |
Image Sensor with Panel Readout and Serialization using Multiple PLLs |
| Alex Krymski 16850 Collins Ave Suite 112-529, Sunny Isles Beach, FL | |
| R39 | 16.7Mpixel 8000fps sparse binarized scientific image sensor |
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Peng Gao, Sampsa Veijalainen, Jente Basteleus, Gaozhan Cai, Bert Luyssaert, Bart Dierickx Caeleste, Hendrik Consciencestraat 1 b, 2800 Mechelen, Belgium |
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| Session 9 | New Applications and Non-visible Imaging |
| Session chair: Pierre Magnan (ISAE) | |
| Invited Presentation-II | |
| I2 | Image Sensor Applications in Minimally Invasive Surgery |
| Dave Shafer, Intuitive Surgical, USA | |
| R40 |
A Sub-Electron Temporal Noise High Modulation Contrast NIR Lock-In Pixel CMOS Image 286 Sensor for Non-Contact Physiological Measurement |
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Chen Cao1 , Masaya Oishi1 , Leyi Tan1 , Keiichiro Kagawa1 , Keita Yasutomi1 , Satoshi Aoyama2 , Nobukazu Teranishi1 , Norimichi Tsumura3 and Shoji Kawahito1,2 1 Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan 2 Brookman Technology Inc., Hamamatsu, 430-0936, Japan 3 Department of Information and Image Sciences, Chiba University, Chiba, 263-8522, Japan |
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| R41 |
Energy Harvesting Pixel Array with Deep Trench Isolated Diodes for Self-Powered Imaging |
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F. Kaklin1,2 , J. M. Raynor2 , R. K. Henderson1 1 School of Engineering, Institute for Integrated Micro and Nano Systems, The University of Edinburgh 2 STMicroelectronics Imaging Division, Edinburgh, UK |
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| R42 |
Advanced Fundus Camera with Innovative NIR Multispectral Color Imaging System -Application Field Development of Dynamic Intelligent Systems Using High-Speed Vision- |
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Hirofumi Sumi1,2 , Hironari Takehara2 , Daiki Shirahige2 , Takahiko Kondo, Kiyotaka Sasagawa 2 , T akashi T okuda 2 , Norimasa Kishi 1 , Jun Ohta 2 and Masatoshi Ishikawa 1 Graduate School of Information Science and Technology, The University of Tokyo1 Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST)2 |
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| R43 |
Organic- and QD-based image sensors integrated on 0.13 μm CMOS ROIC for high resolution, multispectral infrared imaging |
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Epimitheas Georgitzikis1,2, Pawel E. Malinowski1, Yunlong Li1, Jiwon Lee1, Andreas Süss1,5, Fortunato Frazzica1, Jorick Maes3, Sam Gielen4, Frederik Verstraeten4, Pierre Boulenc1, Ming Mao1, Stefano Guerrieri1, Wouter Maes4, Zeger Hens3, Paul Heremans1,2, and David Cheyns1 1 imec, Kapeldreef 75, 3001 Leuven, Belgium 2 KU Leuven, 3001 Leuven, Belgium 3 Center for Nano- and Biophotonics (NB-Photonics), Ghent University, 9000 Ghent, Belgium 4 Hasselt University – IMO, Diepenbeek, B-3590 Belgium 5 now at OmniVision Technologies, Santa Clara, CA 95054 Belgium |
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| R44 |
A VGA Optical Filter-less CMOS Image Sensor with UV-selective and Visible Light Channels by Differential Spectral Response Pixels |
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Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, and Shigetoshi Sugawa Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, Japan |
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| R45 |
UV Photon Counting Detectors for High-Altitude Balloon and Sounding Rocket Experiments |
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Shouleh Nikzad1 , April D. Jewell1 , John Hennessy1 , Erika Hamden2 , Gillian Kyne1,3 , Sam Cheng1 , Chris- tophe Basset1 , Michael E. Hoenk1 , Chris Martin3 , Walter Harris2 , and Todd J. Jones1 1 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 2 University of Arizona, Tucson, AZ 85721 3 California Institute of Technology, Pasadena, CA 91125 |
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| Session 10 | Specialty Imaging |
| Session chair: Shouleh Nikzad (JPL) | |
| R46 |
A Radiation Hardened CMOS Image Sensor with Almost Zero Dark Current Increase During Radiation |
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Takashi Watanabe1 , Tomoaki Takeuchi2 , Osamu Ozawa3 , Hirohisa Komanome3 , Tomoyuki Akahori1 , Kunihiko Tsuchiya2 1 Brookman Technology, Inc. 125 Daikumachi, Naka-ku, Hamamatsu, Shizuoka, 430-0936, Japan 2 Japan Atomic Energy Agency, 4002 Narita, Oarai, Higashiibaraki, Ibaraki 311-1393, Japan 3 Ikegami Tsushinki Co., Ltd, 3 -6 -16 Ikegami, Ohta-ku, Tokyo, 146-8567, Japan |
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| R47 |
Multi-spectral High-Speed Backside Illuminated TDI CCD-in-CMOS Imager |
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Pierre Boulenc1, Steven Thijs1, David San Segundo Bello1,2, Jonas Bentell1, Vasyl Motsnyi1, Linkun Wu1, Marco Müller3, Pilar Gonzalez1, Klaas Tack1, Celso Cavaco1, Maarten Rosmeulen1, Stefano Guerrieri1 and Piet De Moor1 1 imec, Kapeldreef 75, B-3001 Leuven, Belgium 2now at Pyxalis, 170 Rue de Chatagnon, 38430 Moirans, France 3ETH Zurich, Rämistrasse 101, 8092 Zürich, Switzerland |
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| R48 |
Partially Pinned Photodiode Performances in for Emerging Space and Nuclear Applications |
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S. Rizzolo1, V. Goiffon1, F.Corbière1, R. Molina1, S. Rolando1, S. Girard2, P. Paillet3, P. Magnan1, A. Boukenter2, T. Allanche2, C. Muller2,3, C. Monsanglant Louvet4, H. Desjonqueres4, J-R Macé5, J. Rousson6, J-M Barbier6, J-P Baudu6, A. Saravia Flores7 and S. Catherin7 1ISAE-SUPAERO, Université de Toulouse, 10 avenue E. Belin, F-31055, Toulouse, France 2Université de Lyon, Laboratoire Hubert Curien, UMR-CNRS 5516, Saint-Etienne, France 3CEA, DAM, DIF, F-91297 Arpajon Cedex, France 4IRSN, Centre de Saclay, F-91192 Gif-sur-Yvette, France 5ORANO, 1, place Jean Millier – 92400 Courbevoie – France 6OPTSYS, 7 rue Salvador Dali, F-42007 Saint Etienne, France |
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| R49 |
Image Sensor Capable of Analog Convolution for Real-time Image Recognition System Using Crystalline Oxide Semiconductor FET |
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Seiichi Yoneda, Yusuke Negoro, Hidetomo Kobayashi, Kosei Nei, Toshihiko Takeuchi, Masashi Oota, T akuya Kawata, T akayuki Ikeda, and Shunpei Y amazaki Semiconductor Energy Laboratory, Hase, Atsugi-shi, Kanagawa 243-0036, Japan |
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| Session 11 | Global Shutter |
| Session chair: Assaf Lahav (TowerJazz) | |
| R50 |
Back Side Illuminated High Dynamic Range 4.0μm Voltage Domain Global Shutter Pixel with 326 Multiple Gain Readout |
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K. Mori, T. Otaka, T. Isozaki, N. Yasuda, T. Akutsu, K. Miyauchi, A. Tsai , Y. Sawai, S. Tanaka I. Takayanagi and J. Nakamura Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo, 140-0013 Japan † Brillnics Inc., Guangming 6th Rd., Zhubei City, Hsinchu County 302, Taiwan |
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| R51 | A High Performance 2.5um Charge Domain Global Shutter Pixel |
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1Ikuo Mizuno, 1Toshifumi Yokoyama, 1Masafumi Tsutsui, 1Yoshiaki Nishi, 2Veinger Dmitry and 2Assaf Lahav 1TowerJazz Panasonic Semiconductor Co., Ltd. 800 Higashiyama, Uozu City, Toyama, Japan 937-8585 2TowerJazz Migdal Haemeq 23105, Israel |
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| R52 |
Near Infra-Red Enhanced 2.8um Global Shutter Pixel with Light Pipe Structure and High Resistivity P-type Substrate |
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Masafumi Tsutsui1 , Toshifumi Yokoyama1 , Tatsuya Hirata1 , Ikuo Mizuno1 , Dmitry Veinger2 , Adi Birman2 & Assaf Lahav2 1Towerjazz Panasonic Semiconductor Co. Ltd., 800 Higashiyama, Uozu City, Toyama, 937- 8585, Japan 2TowerJazz, 23105 Migdal Haemek, Israel |
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| R53 |
Global Shutter Efficiency Improvement to >100dB in Advanced Global Shutter Imager with Correction Processing |
| Kai Shen, Scott Johnson, Radu Ispasoiu ON Semiconductor, USA | |
| R54 |
A BSI Global Shutter Pixel with Background Light Suppression for Multi-Frame Differential Imaging |
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Xiaoliang Ge, Guy Meynants, Pascale Francis, Karen Feyen, Sahitya Janardhan, Adi Xhakoni ams, Building 8, Borsbeeksebrug 36, 2600 Berchem, Belgium |
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