| Monday 22nd May | |
| Session 1 | 3D Stacking and Small Pixels, Session Chair: Calvin Chao (TSMC) |
| R1.1 | Trends and Developments in State-of-the-Art CMOS Image Sensors, Presenter: John H.F. Scott-Thomas (TechInsights) |
| R1.2 | High Full Well Capacity and Low Noise Characteristics in 0.6 µm Pixels via Buried Sublocal Connections in a 2-Layer Transistor Pixel Stacked CMOS Image Sensor, Presenter: Masataka Sugimoto (Sony Semiconductor Solutions) |
| R1.3 | World smallest 200Mp CMOS Image Sensor with 0.56μm pixel equipped with novel Deep Trench Isolation structure for better sensitivity and higher CG, Presenter: Sungsoo Choi (Samsung Electronics) |
| R1.4 | 0.56um-pitch CMOS Image Sensor for High Resolution Applications, Presenter: Chun Yung Ai (Omnivision) |
| R1.5 | 0.64 um 200 Mp Stacked CIS with Switchable Pixel Resolution, Presenter: Minho Kwon (Samsung Electronics) |
| R1.6 | Image sensor family with 1.40 µm pixel, 10ke- LFW, NIR-enhanced QE, dual gain readout, and low power consumption, Presenter: Vladi Korobov (ON Semiconductor) |
| Session 2 | Noise, Session Chair: Manlyun Ha (DB Hitek) |
| R2.1 | Hot Carrier Injection Induced Random Telegraph Noise Degradation in a 0.8um-pitch 8.3Mpixel Stacked CMOS Image Sensor, Presenter: Calvin Y Chao (TSMC) |
| R2.2 | Gate Oxide Benchmarking For Low Frequency Noise Improvement On 3D Stacked CMOS Image Sensors, Presenter: Maria M Gouveia da Cunha (STMicroelectronics and ISAE-Supaero) |
| R2.3 | Exploring Space-Radiation Induced Dark Signal and Random-Telegraph-Signal in a Sony IMX219 CMOS Image-Sensor, Presenter: Aubin Antonsanti (ISAE SUPAERO) |
| R2.4 | Low Temperature Lag-induced FPN of Dual Transfer Global Shutter Pixels under Low Illumination Conditions, Presenter: Xiaoliang Ge (Gpixel) |
| R2.5 | Reduction of RTS noise by optimizing fluorine implantation in CMOS image sensor, Presenter: Sungsoo Choi (Samsung Electronics) |
| R2.6 | Dark Current Compensation of a CMOS Image Sensor by Using In-Pixel Temperature Sensors, Presenter: Accel Abarca (INL – International Iberian Nanotechnology Laboratory) |
| Session 3 | Pixel Design & Process Technology, Session Chair: Bumsuk Kim (Samsung Electronics) |
| R3.1 | 0.6μm F-DTI based Quad-cell with Advanced Optic Technology for All-pixel PDAF and High Sensitivity/SNR Performance, Presenter: Junsik Lee (Samsung Electronics) |
| R3.2 | Low-noise 3-D Bending Pixel Transistor for Small Pixel CMOS Image Sensors Applications, Presenter: Kyoung eun Chang (Samsung Electronics) |
| R3.3 | Near-infrared sensitivity enhancement of silicon image sensor with wide incident angle, Presenter: Atsushi Ono (Shizuoka University) |
| R3.4 | Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well Capacity, Presenter: Ken Miyauchi (Brillnics Japan Inc.) |
| R3.5 | Improved QE in CMOS image sensors with nano-black antireflection layer, Presenter: Martin Prest (The Open University) |
| R3.6 | A customized 110nm CMOS process for large-area radiation detection and imaging, Presenter: Lucio Pancheri (University of Trento) |
| Poster session | Posters & Flash Presentations, Session Chairs: Pierre Magnan (ISAE-SUPAERO) & Francois Roy (STMicroelectronics) |
| P01 | A 607MHz time-compressive computational pseud-dToF CMOS image sensor, Presenter: Pham N Anh (Shizuoka University) |
| P02 | Histogram-free direct time-of-flight imaging based on a machine learning processor on FPGA, Presenter: Tommaso Milanese (EPFL) |
| P03 | A 9-shared 3×3 Nonacell Image Sensor with 0.64μm unit pixels for Read Noise and Low-illuminance SNR enhancement, Presenter: Wonchul Choi (Samsung Electronics) |
| P04 | Light-Emission Crosstalk Model and Dynamic Correction Algorithm for Large-Scale SPAD Image Sensors, Presenter: Ayman Abdelghafar (Canon) |
| P05 | Optimal biasing and physical limits of DVS event noise, Presenter: Rui Graca (Institute of Neuroinformatics – UZH and ETH Zurich) |
| P06 | Metasurface-based planar microlenses for SPAD pixels, Presenter: Martin Lepers (STMicroelectronics/CEA Leti) |
| P07 | Flexible Spectrally-Scanning Snapshot Multispectral Imaging On Dual-Tap Coded-Exposure-Pixel CMOS Image Sensors, Presenter: Roberto Silva (University of Toronto) |
| P08 | A SPAD-based linear sensor with in-pixel temporal pattern detection for interference and background rejection with smart readout scheme, Presenter: Alessandro Tontini (University of Trento) |
| P09 | Count-Free Histograms with Race Logic for Single-Photon LiDAR, Presenter: Atul N Ingle (Portland State University) |
| P10 | A Study on Two Step Reset LOFIC Pixel to Reduce SNR Gap, Presenter: Kazuki Tatsuta (Research Organization of Science and Engineering Ritsumeikan University) |
| P11 | High Precision direct-ToF Ranging using CMOS SPAD and Ultra-short Pulsed Laser, Presenter: Tsai-Hao Hsu (National Yang Ming Chiao Tung University) |
| P12 | High-speed, super-resolution 3D imaging using a SPAD dToF sensor, Presenter: German Mora Martin (University of Edinburgh) |
| P13 | Self-Powered Ambient Light Sensor Using Energy Harvesting Pixels and Zero Power Communication., Presenter: Benjamin Sarachi (ST Microelectronics) |
| P14 | An Efficient Direct Time-of-Flight (dToF) LiDAR System Based on High Resolution SPAD Array, Presenter: Tze Ching Fung (Samsung Semiconductor Inc.) |
| P15 | SLIM: Small and Learnable Image Signal Processing Module for CMOS and Quanta Image Sensors, Presenter: Stanley H. Chan (DeepLux Technology Inc.) |
| P16 | Cyber Security for CMOS Image Sensors, Presenter: Boyd A Fowler (OmniVision Technologies) |
| P17 | A CMOS Image Sensor With 1.6us Conversion Time 10-bits Column-Parallel Hybrid ADC Using Self-Adaptive Charge-Injection Cell, Presenter: Chih-Cheng Hsieh (National Tsing Hua University) |
| P18 | Charge Demultiplexing for an Ultra-High-Speed Charge-Domain CMOS TDI Image Sensor with a multi-MHz Line Rate, Presenter: Suzy Patchett (Teledyne DALSA) |
| P19 | Detecting Short-wavelength Infrared Photons by Schottky-barrier based Single Photon Avalanche Diode in 180-nm CMOS Technology, Presenter: Chun-Hsien Liu (National Yang Ming Chiao Tung University) |
| P20 | A Burst Mode 20Mfps Low Noise CMOS Image Sensor, Presenter: Xin Yue (Dartmouth College) |
| P21 | Towards Infrared Spectral Extension of CMOS Image Sensors, Presenter: Kaitlin M Anagnost (Dartmouth College) |
| P22 | Chip-level Performance Analysis using Test Element Group Devices for indirect Time-of-Flight CMOS Image Sensor, Presenter: Seunghyun Lee (Samsung Electronics) |
| P23 | Silicon Metalens for a fully Silicon integrated iTOF SWIR sensors, Presenter: Matthieu J.o. Dupre (Qualcomm Technologies Inc.) |
| P24 | Toward a Photon Counting Detector for X-ray Imaging by Direct Deposition of Scintillator on 32×32 CMOS SPAD Array, Presenter: Jau Yang Wu (Electrical Engineering Program C, Yuan Ze University) |
| P25 | Feedback Control of a Block-Wise-Controlled Image Sensor Based on Brightness Distribution Analysis, Presenter: Kohei Tomioka (NHK STRL) |
| P26 | Analysis of Backside Illuminated CMOS pixels’ Quantum Efficiency under Ultraviolet Illumination, Presenter: Nour Fassi (STMicroelectronics – ISAE SUPAERO) |
| P27 | Near Infrared Quantum Efficiency Simulations for CMOS Image Sensors, Presenter: Erez Tadmor (onsemi) |
| P28 | Metasurface-based planar microlenses integrated on Back-Side Illuminated CMOS pixels, Presenter: Martin LEPERS (STMicroelectronics) |
| P29 | A hybrid, back-illuminated image sensor for high QE visible and infrared detection, Presenter: Renato AD Turchetta (IMASENIC) |
| P30 | On-chip narrow angle filter development, Presenter: Amos Fenigstein (Tower semiconductor) |
| P31 | Correlations between DCR and PDP of SPAD integrated in a 28 nm FD-SOI CMOS Technology, Presenter: Francis CALMON ( INSA Lyon – INL) |
| P32 | A new digital pixel for particle detection, Presenter: Nicola Massari (Fondazione Bruno Kessler) |
| P33 | A Study on a Feature Extractable CMOS Image Sensor for Low-Power Image Classification System, Presenter: Shunsuke Okura (Ritsumeikan Univ.) |
| P34 | Temporal Noise Suppression Method using Noise Bandwidth Limitation for Pixel-Level Single-Slope ADC, Presenter: Sanggwon Lee (Samsung Electronics Co., Ltd. ) |
| P35 | The source-to-gate capacitance of the in-pixel source follower: a positive feedback during charge sensing which increases column settling time and noise voltage., Presenter: Peter G Centen (PeerImaging) |
| P36 | A Charge pump based TDI accumulator for CMOS Image Sensors, Presenter: Rahul Kumar Singh (IIT Delhi) |
| P37 | Understanding 3D imaging performance in sensors with angle-sensitive pixels, Presenter: Pascal Gregoire (Airy3D) |
| P38 | A SPAD based TAC Pixel with Logarithmic and Linear Multi-mode Operation for Compressed LiDAR Ranging by Direct ToF Measurement, Presenter: Kapil Jainwal (Indian Institute of Technology Bhilai) |
| P39 | A back-illuminated full-frame low-noise HDR 8μm, 12Mpixel, 34fps image sensor for industrial, medical and scientific applications, Presenter: Adria Bofill-Petit (IMASENIC) |
| P41 | Front- / Backside Illuminated Low Noise Embedded CCD image sensor with Multi Level Anti Blooming functionality, Presenter: Olaf M. Schrey (Fraunhofer Institute of Microelectronic Circuits and Systems) |
| P42 | High Dynamic Range Pinned Photodiode Pixel with Floating Gate Readout and Dual Gain, Presenter: Konstantin Stefanov (The Open University) |
| P43 | Ultra-sensitive CMOS image sensor capable of operating down to 200 ulx at 60 fps, Presenter: Pierre Fereyre (Teledyne e2v) |
| P44 | Evolution of a 4.6 μm, 512×512, ultra-low power stacked digital pixel sensor for performance and power efficiency improvement, Presenter: Rimon Ikeno (Brillnics Japan Inc.) |
| P40 | Withdrawn |
| Tuesday 23rd May | |
| Session 4 | HDR and Automotive, Session Chair: Jan Bogaerts (Gpixel) |
| R4.1 | A 3.0µm-pixels and 1.5µm-pixels combined CMOS Image Sensor for Viewing and Sensing applications with 106dB Dynamic Range, High-Sensitivity, LED-Flicker Mitigation and Motion Blur-less, Presenter: Satoko Iida (Sony Semiconductor Solutions) |
| R4.2 | Automotive CMOS Image Sensor Family with 2.1um LFM pixel, 150 dB Dynamic Range and High Temperature Stability, Presenter: Manuel Innocent (onsemi) |
| R4.3 | Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a Single-Exposure Dynamic-Range of 120 dB, Presenter: Dongsuk Yoo (Samsung Electronics) |
| R4.4 | 110dB High Dynamic Range Continuous Non-Uniform TTS and Linear ADC Scheme Using A 4.6 μm Stacked Digital Pixel Sensor, Presenter: Toshiyuki Isozaki (Brillnics Japan Inc.) |
| R4.5 | A 5MPixel Image Sensor with 3.45um Dual Storage Global Shutter BSI Pixel with 90dB DR, Presenter: Tomas Geurts (Omnivision) |
| R4.6 | A High Dynamic Range APS-C Sized 8K 120-fps Stacked CMOS Image Sensor, Presenter: Wesley Cotteleer (GPixel) |
| Session 5 | Smart and Event-based Imagers, Session Chair: Vladi Korobov (On Semiconductor) |
| R5.1 | A 90dB single-shot HDR, 0.5MP global-shutter image sensor with NIR QE enhancement, 20mW power consumption and smart event detection modes, Presenter: Adi Xhakoni (ams OSRAM) |
| R5.2 | An InGaAs Multi-Functional Fast SWIR Imager with Event-based and Laser Multi-spot Sensing, Presenter: Claudio G Jakobson (SCD) |
| R5.3 | Guided Flash Lidar: A Laser Power Efficient Approach for Long-Range Lidar, Presenter: Filip Taneski (University of Edinburgh) |
| R5.4 | FAD-SPADs: a New Paradigm for Designing Single-Photon Detecting Arrays, Presenter: Mel White (Rice University) |
| R5.5 | Pixel Modeling and Parameter Extraction for Event-based Vision Sensors, Presenter: Boyd Fowler (Omnivision) |
| R5.6 | Exploiting Alternating DVS Shot Noise Event Pair Statistics to Reduce Background Activity Rates, Presenter: Brian J Mcreynolds (AFIT/CI, Institute of Neuroinformatics, UZH/ETH Zurich) |
| Wednesday 24th May | |
| Session 6 | Beyond Visible & Scientific Imaging, Session Chair: Daniel McGrath (Consultant) |
| R6.1 | Stability and photometric accuracy of CMOS Imaging Detectors: radiation damage, surface charge, and quantum confinement in delta-doped surfaces, Presenter: Michael E Hoenk (Jet Propulsion Laboratory) |
| R6.2 | 5 Minutes Integration Time Deep UV Pixel Development for “Ultrasat” Space Mission, Presenter: Adi Birman (Tower Semiconductor) |
| R6.3 | Fabrication Of Small Pitch InGaAs Photodiodes Using In-Situ Doping And Shallow Mesa Architecture For SWIR Sensing, Presenter: Jules Tillement (STMicroelectronics) |
| R6.4 | Evaluating the theoretical optical performances of colloidal quantum dot films for infrared imaging, Presenter: Arthur Arnaud (STMicroelectronics) |
| R6.5 | Custom CMOS Image Sensors for Application to Low Light Level Imaging and Use in Extreme Low Light Level Electron Bombarded CMOS Image Sensors, Presenter: Verle Aebi (EOTech, LLC.) |
| R6.6 | A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication – (workshop manuscript not submitted), Presenter: Joo Hyoung Kim (IMEC) |
| Invited presentations | Session Chair: Neale A.W. Dutton (IISW23 TPC Chair, STMicroelectronics) |
| I1.1 | Bending Out of the Box: The Marriage of Sensors and Computational Imaging, Presenter: Charles A. Bouman (Purdue University) |
| I1.2 | Image Sensors in 3D stacking technology: Retrospective and Perspectives from a Digital Architect’s Point of View, Presenter: Jérôme Chossat (STMicroelectronics) |
| Session 7 | Speciality and New Applications, Session Chair: Amos Fenigstein (TowerJazz Semiconductor) |
| R7.1 | In Depth Characterization and Radiation Testing of a High Performance Fully Passivated Charge Domain CDTI based CCD-on-CMOS Image Sensor, Presenter: Antoine Salih Alj (ISAE-SUPAERO / CNES / Thales Alenia Space) |
| R7.2 | A 200 Stages Bi-directional 2-Phases CCD-on-CMOS Back Side Illuminated Time Delay Integration Image Sensor, Presenter: Julien Michelot (Pyxalis) |
| R7.3 | A 316MP, 120FPS, High Dynamic Range CMOS Image Sensor for Next Generation Immersive Displays, Presenter: Abhinav Agarwal (Forza Silicon (Ametek Inc.) |
| R7.4 | Hybrid Visible Imaging and Near-infrared Optical Spectroscopy with Smartphone Image Sensor using Bioinspired Nanostructures – (workshop manuscript not submitted), Presenter: Tze Ching Fung (Samsung Semiconductor, Inc.) |
| R7.5 | 0.5e- rms Read Noise CMOS Image Sensors and Sub-Electron Image Processing for Night Vision Application, Presenter: Kwang Bo Cho (BAE Systems) |
| R7.6 | High-speed Time-Delay-Integration (TDI) Imaging with 2-D SPAD arrays, Presenter: Daniel Van Blerkom (SWIRLabs) |
| Thursday 25th May | |
| Session 8 | SPAD Devices, Session Chair: Edoardo Charbon (EPFL) |
| R8.1 | A 3.06 μm SPAD Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-resolution Photon-counting, Presenter: Jun Ogi (Sony Semiconductor Solutions Corporation) |
| R8.2 | A high PDE and high maximum count rate and low power consumption 3D-stacked SPAD device for Lidar applications, Presenter: Raul-Andres Bianchi (STMicroelectronics) |
| R8.3 | A NIR Enhanced SPAD Fabricated in 110 nm CIS Technology with 78% PDP at 500 nm, Presenter: Utku Karaca (EPFL) |
| R8.4 | GeSi SPAD for SWIR Sensing and Imaging, Presenter: Neil Na (Artilux) |
| R8.5 | Germanium on silicon SPAD 32×32 pixel array in 3D-stacked technology for SWIR applications, Presenter: Dominik Golanski (STMicroelectronics) |
| R8.6 | Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process, Presenter: Feng Liu (EPFL) |
| Session 9 | Time of Flight, Session Chair: Preethi Padmanabhan (Pointcloud inc.) |
| R9.1 | A Half-Pulse 2-Tap Indirect Time-of-Flight Ranging Method with Sub-Frame Operation for Depth Precision Enhancement and Motion Artifact Suppression, Presenter: ChiaChi Kuo (Tohoku University) |
| R9.2 | A 3.5um Indirect Time-of-Flight Pixel with In-Pixel CDS and 4-Frame Voltage Domain Storage, Presenter: Erez Tadmor (onsemi) |
| R9.3 | A 320×232 LiDAR Sensor with 24dB Time-Amplified and Phase-Revolved TDC, Presenter: Chin Yin (TSMC) |
| R9.4 | A 648 x 484-Pixel 4-Tap Hybrid Time-of-Flight Image Sensor with 8 and 12 Phase Demodulation for Long-Range Indoor and Outdoor Operations, Presenter: Kamel Mars (Shizuoka University) |
| R9.5 | Tap mismatch mitigation of 3 µm 2-tap pixels of indirect Time-of-Flight image sensor for high-speed depth mapping, Presenter: Yuhi Yorikado (Sony Semiconductor Solotions) |
| R9.6 | A 1.2Mp indirect-ToF sensor with on-chip ISP for low-power and self-optimization, Presenter: Seung-Chul Shin (Samsung Electronics) |
