1997 IEEE Workshop on

Charge-Coupled Devices &

Advanced Image Sensors

 

Proceedings index

 

Papers should be cited as:

Author, Title, in Proc. 1997 IEEE Workshop on CCDs and Advanced Image Sensors, June 5-7, 1997 Bruges, Belgium.

 

Title

Authors

Affiliation

A High Performance 5V-Only l/5-Inch 220k-Pixel CCD Image Sensor

T. Watanabe, E. Koyama, K. Yamamoto, E. Akaike, S. Takano, T. Inoue, K. Okada, T. Kawasaki, H. Urabe, H. Adachi, J. Nakai, K. Misawa 

 

Sharp Corporation, Nara, Japan

Low Noise and High Speed Charge Detection in High Resolution CCD Image Sensors

J. Hynecek

Texas Instruments Inc., Dallas, TX, USA

Characterization of building block imagers with respect to linear dynamic range

H. Folkerts, E. Roks, L. Korthout, A. Theuwissen

Philips Imaging Technology, Eindhoven, The Netherlands

CCD-Based Magnetic Field Imaging

N. 0, A. Nathan*

DALSA INC., Waterloo, ON, Canada.

* University of Waterloo, Waterloo, ON, Canada

A 1/4 Inch 330k Square Pixel Progressive Scan CMOS Active Pixel Image Sensor

M. Sasaki, E. Oba, K. Mabuchi, N. Tanaka, Y. Iida, R. Miyagawa

ULSI Research Laboratories, Toshiba Corporation, Kawasaki, Japan

An Experimental 4K x 2K Color Video Pickup System Based on CMD Imagers

K. Mitani, Y. Fujita, H. Shimamoto

NHK (Japan Broadcasting Corporation), Tokyo, Japan

Fast CMOS Imaging with High Dynamic Range

J. Huppertz, R. Hauschild, B. Hosticka, T. Kneip, S. Muller*, M. Schwarz 

Fraunhofer Institut of Microelectronic Circuits and Systems, Duisburg, Germany.

* Gerhard-Mercator-University, Duisburg, Germany

A bipolar imager with bipolar field memory

M. Shinohara, S. Sugawa, Y. Nakamura, T. Ohmi*

Canon Inc., Kanagawa Japan.

* Tohoku University, Sendai, Japan

A 3.30x2.95 mm2 l/6-inch 250k-pixel IT-CCD image sensor

A. Asai, Y. Toumiya, K. Matsuzaki*, K. Nigawara, S. Kitayama*, Y. Wataya, K. Masuda

SONY Corporation, Kanagawa, Japan.

* SONY Kokubu Corporation, Kagoshima, Japan

Technology and Performance of VGA FT-Imagers with Double and Single Layer Membrane Poly-Si Gates

H. Peek, D. Verbugt, J. Maas, M. Beenhakkers

Philips Imaging Technology, Eindhoven, The Netherlands

Design and Processing Aspects of a Sixteen Tap, 32 Sector, 50 Megapixel Full Frame Image Sensor

M. Farrier, C. Smith, W. Pfister*

DALSA INC., Waterloo, ON, Canada.

* Recon-Optical Inc., Barrington, IL, USA

A model for the diffusion behaviour of generation centers in CCDs

W.J. Toren, J. Bisschop*

Philips Imaging Technology, Eindhoven, The Netherlands.

* Philips Semiconductors, Nijmegen, The Netherlands

Near-100% fill factor standard CMOS active pixels

B. Dierickx, G. Meynants, D. Scheffer

IMEC, Leuven, Belgium 

Frame-Transfer CMOS Active Pixel Sensor With Pixel Binning

Z. Zhou, B. Pain, E. Fossum*

Jet Propulsion Laboratory, Pasadena, CA, USA.

* Photobit, La Crescenta, CA, USA

A novel photoswitch image sensor

R. Dyck, J. Pinter, T. Selbo, S. Onishi, D. Xiao, L. Haynes*, H. Brown**

Lockheed Martin Fairchild Defense Systems, Milpitas, CA, USA.

* Intelligent Automation, Inc., Rockville, MD, USA.

** Wright Laboratories, Tyndall AFB, FL, USA

Leakage current reduction of large-area silicon microstrip sensors

W. Tsay, Y. Chen, L. Laih, J. Hong, A. Chen, W. Lin, y. Chang, S. Hou, J. Tang, C. Chio, S. Chiang, H. Ting

National Central University, Taiwan  PAPER NOT PRESENTED

An Image Sensor using Quad Tree for Selective Scanning with Adaptive Resolution  

J. Akita, K. Asada

University of Tokyo, Tokyo, Japan

Logarithmic-Converting CCD Line Sensor and Its Noise Characteristics

K. Takada, S. Miyatake

Minolta Co., Ltd., Osaka, Japan

a-Si:H avalanche multiplication p-i-n photodiode films

K. Sawada, H. Manabe, T. Ando

Shizuoka University, Hamamatsu, Japan

CCD cameras for medical X-ray imaging

A. Bruijns, R. Bastiaens, R. Snoeren, H. Reiter*

Philips Medical Systems, Best, The Netherlands.

* Philips Research Laboratories, Aachen, Germany

High Responsivity Photodetector on SOI substrate

W. Zhang, M. Chan, S. Fung, P. Ko

Hong Kong University of Science & Technology, Hong Kong

Optical simulation for image sensors by wave analysis

H. Mutoh 

 

Link Research Corporation, Tokyo, Japan

Single Pixel Test Structures for Characterization and Comparative Analysis of CMOS Image Sensors

 

B. Fowler, D. Yang, H. Min, A. EI Gamal

Stanford University, Stanford, CA, USA

3D Optoelectronic Simulations for CCD Imagers

 

A. Ruckelshausen, R. Tobergte, P. Thyen

Fachhochschule Osnabruck, Osnabruck, Germany

Anti-Blooming Optimisation using Simulations and Measurements for a VAB Process

 

G. Weale, M. Kiik, E. Fox, G. Ingram

DALSA INC., Waterloo, ON, Canada

An In-situ Storage Image Sensor (ISIS) with Elongated CCD Storage for a High-speed Video-Camera of One Million pps

T. Etoh, K. Takehara

Kinki University, Osaka, Japan

Reviews on Digital Still cameras

(Invited Paper)

 

M. Konishi, K. Iwabe

Fuji Photo Film Co., Ltd., Saitama, Japan

Offset-free offset correction for Active Pixel Sensors

 

B. Dierickx, G. Meynants, D. Scheffer

IMEC, Leuven, Belgium

Recent Progress of CMD Imaging

 

T. Nakamura, K. Saitoh

Olympus Optical Co., Ltd., Nagano, Japan

Wide Intrascene Dynamic Range CMOS APS Using Dual Sampling

 

O. Yadid-Pecht, E. Fossum*

Jet Propulsion Laboratory, Pasadena, CA, USA.
* Photobit, La
Crescenta, CA, USA

Driving Voltage Reduction of Shift Registers in IT-CCD Image Sensors

 

N. Mutoh, S. Kawai, T. Yamada, Y. Kawakami, T. Nakano, K. Orihara,  N. Teranishi

NEC Corporation, Kanagawa, Japan

Automated optimisation of FT-CCD Image Pixels

 

A. Heringa, J. Bosiers*, E. Roks*

ED&T Services, Philips Research, Eindhoven, The Netherlands.
* Philips Imaging Technology,
Eindhoven, The Netherlands

A 36 cm2 Large Monolythic pn-CCD Detector for X-ray Astronomy

 

L. Struder, H. Brauninger, U. Briel, R. Hartmann, G. Hartner, D. Hauff, N. Krause, B. Maier, N. Meidinger, E. Pfeffermann, M. Popp, C. Reppin, R. Richter, D. Satter, J. TrUmper, U. Weber, P. Holl*, J. Kemmer*, H.
Soltau*, A. Viehl*, C. v. Zanthier*

Max-Planck-Institut, Munchen, Germany.
* Ketek GmbH,
Oberschleissheim, Germany

A Low Smear p-substrate Frame Interline Transfer Sensor with Simplified kTC Noise Reduction

C. Smith, E. Fox, M. Miethig, M. Farrier

DALSA INC., Waterloo, ON, Canada

Active Pixel Image Sensors in 0.35 um CMOS Technology

S. Mendis, A. Budrys, J. Lin, K. Cham

Hewlett Packard, Palo Alto, CA, USA

Pulsed bipolar CMOS imager

T. Delbruck, N. Mascarenhas, M. Chi*, A. Bergemont*, C. Mead

Synaptics, San Jose, CA, USA.
* National Semiconductor,
Santa Clara, CA, USA

Design of an Image Sensor with On-Chip Oversampling Analog-to-Digital Conversion

J. Nakamura, T. Nomoto, T. Nakamura, B. Pain*, E. Fossum**

Olympus Optical Co., Ltd., Tokyo, Japan.
*Jet Propulsion Laboratory,
Pasadena, CA, USA.
**Photobit, LCC.,
Pasadena, CA, USA

A Single Chip CMOS APS Digital Camera

B. Olson, T. Shaw, B. Pain, R. Paniccaci*, B. Mansoorian*, R. Nixon*, E. Fossum*

Jet Propulsion Laboratory, Pasadena, CA, USA.
* Photobit, La
Crescenta, CA, USA

A 2V Driving Voltage 1/3-inch 410k-pixel Hyper-D Range CCD

T. Yamaguchi, I. Shimizu, K. Henmi, R Tanaka, T. Tanaka, H. Matsumaru, M. Miyashita, I. Ihara, S. Tashiro, M. Yamanaka, Y. Nishi,

K. Tachikawa*, H. Komobuchi**

Matsushita Electronics Corporation, CCD division, Kyoto, Japan.
* Matsushita Electronics Corporation, ULSI Process Techn.
Development Center, Kyoto, Japan.
** Matsushita Electric Industrial CO.,
LTD, Kyoto, Japan.

Development of Back-Illuminated, Fully-Depleted CCD Image Sensors For Use in Astronomy and Astrophysics

 

S. Holland, R. Stover*, M. Wei*, G. Goldhaber, D. Groom, W. Moses,

C. Pennypacker, S. Perlmutter, N. Wang

Lawrence Berkeley National Laboratory, Berkeley, CA, USA.

* University of California Observatories, Lick Observatory

 

Recent results with Delta-doped CCDs

 

S. Nikzad, A. Smith, Q. Yu, P. Grunthaner, S. Elliott

Jet Propulsion Laboratory, Pasadena, CA, USA

Non-Linear Output from Image Sensors: Applications, Techniques, and Limitations

 

E. Fossum

Photobit, La Crescenta, CA, USA.

Megapixel CMOS APS with Analog and Digital Readout

 

B. Mansoorian, G. Yang*, R. Panicacci, C. Wrigley*, C. Staller**, B.
Pain*, E. Fossum

Photobit, La Crescenta, CA, USA.
* Jet Propulsion Laboratory,
Pasadena, CA, USA.
** Boeing Defense and Space Group,
Anaheim, CA, USA

Motion adaptive image sensor

 

T. Hamamoto, K. Aizawa, M. Hatori

University of Tokyo, Tokyo, Japan

Pixel Parallel and Column Parallel Architectures and their Implementations of On Sensor Image Compression

 

K. Aizawa, T. Hamamoto, Y. Ohtsuka, M. Hatori, M. Abe*

University of Tokyo, Tokyo, Japan.
* NHK,
Tokyo, Japan

A Wide Dynamic Range CMOS Image Sensor

 

R. Ginosar, A. Gnusin

Israel Institute of Technology, Haifa, Israel

Packaging and Operation of Philips 7kx9k CCDs

 

M. Lesser, D. Ouellette, A. Theuwissen*, G. Kreider*, H. Michaelis**

Steward Observatory, University of Arizona, Tucson, USA.
* Philips Imaging Technology,
Eindhoven, The Netherlands.
** DLR, Institut fUr Planetenerkundung

A High Resolution, Low Cost CCD Family of Image Sensors for Digital Camera Applications

 

S. Bencuya, J. Toker, S. Haque

Polaroid Corporation, Cambridge, MA, USA

The design of a novel GaAs CCD multiplying D/A converter

 

H. Kwok, L. Chen

University of Victoria, Victoria, BC, Canada

Ultrafast Correlation Image Sensor: Concept, Design, and Applications

 

S. Ando, T. Nakamura, T. Sakaguchi

The University of Tokyo, Tokyo, Japan