2009 INTERNATIONAL IMAGE SENSOR WORKSHOP June 26-28, 2009 Bergen, Norway Papers should be cited as: Author(s), Title, in Proc. of 2009 International Image Sensor Workshop, Bergen, NORWAY, June 22-28, 2009.
Friday, June 26^th 2009
08:00-08:30	Registration
08:30-08:32	Welcome Eric R Fossum – Welcome by Image Sensors Inc.
08:32-08:50	Opening Albert Theuwissen – General Chair’s opening remarks Johannes Solhusvik – Technical Program Chair’s opening remarks
Session 01	Invited presentation and BSI Session chair: Boyd Fowler, Fairchild Imaging, USA
08:50-09:30	Invited Presentation – I Sense and Sensitivity Mats Wernersson, Henrik Eliasson, Sony Ericsson Mobile Communications AB, Lund, Sweden
09:30-09:50	Improved color separation for a backside illuminated image sensor with 1.4 μm pixel pitch Jens Prima^1, Francois Roy^1, Hugues Leininger^1, Christophe Cowache^1, Jerome Vaillant^1, Luc Pinzelli^1, Daniel Benoit^1, Norbert Moussy^2, Benoit Giffard^2 ^1FTM Imaging, STMicroelectronics, Crolles, France. ^2CEA Léti-MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
09:50-10:10	A Manufacturable Back-Side Illumination Technology using Bulk-Si Substrate for Advanced CMOS Image Sensors S.G. Wuu^1, C.C. Wang, D.N. Yaung^1, Y.L. Tu^1, J.C. Liu^1, T.H. Hsu^1, F.J. Shiu^1, C.Y. Yu^1, G.Y. Shiau^1, R.J. Lin, C.S.Tsai^1, L. Tran^1, SSChen^1, CCWang^1, SYHuang^1, H. Rhodes^2, D. Tai^2, Y. Qian^2, D. Mao^2, S. Manabe^2, A. Shah^2, R. Yang^2, J.C. Hsieh^3, Calvin Chang^3, C.W. Lu^3, Shawn Tseng^3. ^1Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, R.O.C. ^2OmniVision Technologies, Inc., 4275 Burton Drive, Santa Clara, CA 95054 ^3VisEra Technologies Company, Hsin-Chu, Taiwan, R.O.C.
10:10-10:30	The Mass Production of BSI CMOS Image Sensors H. Rhodes, D. Tai, Y. Qian, D. Mao, V. Venezia, Wei Zheng, Z. Xiong, C.Y. Liu, K.C. Ku, S. Manabe, A. Shah, S. Sasidhar, P. Cizdziel, Z. Lin, A. Ercan, M. Bikumandla, R. Yang, P. Matagne, C. Yang, H. Yang, T.J. Dai, J. Li, S.G. Wuu^1,D.N. Yaung^1, C.C. Wang^1, J.C. Liu1, C.S. Tsai^1, Y.L.Tu^1, T.H. Hsu^1. Omnivision Technologies, Inc. USA; ^1Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C.
10:30-10:45	Break
Session 02	BSI and small pixel sensors Session chair: Alex Krymski, Alexima, USA
10:45-11:00	A 1.4 μm Pixel Backside Illuminated CMOS Image Sensor with 300 mm Wafer Based on 65 nm Logic Technology Y.Kohyama, H.Yamashita, S.Uya, T.Yoshida, N.Sakurai, I.Inoue, T.Yamaguchi, K.Nagata, H.Harakawa^1, A.Murakoshi^1, T.Harada^1, M.Takahashi^1, M.Morita^1, K.Tanida^1, M.Dohi^1, K.Takahashi^1, K.Iwade^1, T.Matsumura^1, H.Sugiyama^1, H.Goto, K.Tomioka. Imaging Device Marketing & Engineering Dept., and ^1Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Japan
11:00-11:15	Towards a Three-Dimensional Back-Illuminated Miniaturized CMOS Pixel Technology using 100nm Inter-Layer Contacts Perceval Coudrain^1,2,3, P. Magnan^1, P. Batude^3, X. Gagnard^2, C. Leyris^2, L. Depoyan^2, Y. Cazaux^3, M. Vinet^3, B. Giffard^3, P. Ancey^2. ^1Université de Toulouse, Institut Supérieur de l’Aéronautique et de l’Espace; ^2STMicroelectronics, Crolles, France; ^3CEA Leti-MINATEC, France
11:15-11:30	Monolithic and Fully-Hybrid Backside Illuminated CMOS Imagers for Smart Sensing Padmakumar R. Rao, Kyriaki Minoglou, Koen De Munck, Deniz Sabuncuoglu Tezcan, Chris Van Hoof, Piet De Moor. IMEC, Belgium
11:30-11:45	CMOS Synchronous shutter backside illuminated image sensor for hyperspectral imaging B. Dierickx^1,3, B. Dupont^1, Paul Jerram^2, Martin Fryer^2, Jérôme Pratlong^2, Andrew Walker^2, A. Defernez^1. ^1Caeleste CVBA, Belgium; ^2e2v Ltd, UK; ^3Vrije Universiteit Brussel (VUB), Belgium
11:45-12:00	1.1μm Backside Imager vs. Frontside Imager: an optics-dedicated FDTD approach Flavien Hirigoyen, Jérôme Vaillant, Emilie Huss, Frederic Barbier, Jens Prima, François Roy, Didier Hérault. STMicroelectronics, Crolles, France
12:00-13:30	Lunch
13:30-13:45	IISW09 Group Picture (all workshop attendants)
Session 03	Small pixel sensors and WLC Session Chair: Shoji Kawahito, Shizuoka University, Japan
13:45-14:00	New Integration Technology of CIS for High Sensitivity Small Pixel Seounghyun Kim, Taegyu Kim, Munhwan Kim, Dongbin Park, Heesung Shim, Jongtaek Hwang, Sungho Jun, Ohjin Jung, Joonku Yoon, Minhyung Lee, Chulho Park, Jaewon Han, Joon Hwang, Dongbu HiTek , Chungbuk, Korea Presenter: Hoon Jang, Dongbu HiTek , Chungbuk, Korea
13:45-14:00	CMOS Image Sensor with a Thin Overlaid Panchromatic Organic Photoconductive Layer as the Best Candidate for Sensors with Reduced Pixel Size Mikio Ihama, Tetsurou Mitsui, Kimiatsu Nomura, Yoshiki Maehara, Hiroshi Inomata, Takashi Gotou, Yutaka Takeuchi. FUJIFILM Corporation, Frontier Core-Technology Laboratories, Japan
14:00-14:15	A 1.4 μm pixel front-side-illuminated image sensor for mobile phones R. Daniel McGrath, John T. Compton, R. Michael Guidash, Edward T. Nelson, Christopher Parks, Joseph R. Summa. Eastman Kodak Company, USA
14:15-14:30	CMOS image sensor with high refractive index lightpipe J. Gambino^1, B. Leidy^1, A. Watts^1, C. Musante^1, K. Ackerson^1, S. Mongeon^1, J. Adkisson^1, R.J. Rassel^1, K. Ogg^1, J. Ellis-Monaghan^1, M. Jaffe^1, M. Laukkanen^2, K. Karaste^2, W. McLaughlin^2, T. Gädda^2, J. Rantala^2. ^1IBM Microelectronics, UK; ^2Silecs,, Finland
14:30-14:45	Pixel continues to shrink…. Pixel Development for Novel CMOS Image Sensors G. Agranov, R. Mauritzson, J. Ladd, A. Dokoutchaev, X. Fan, X. Li, Z. Yin, R. Johnson, V. Lenchenkov, S. Nagaraja, W.Gazeley, J. Bai, H. Lee; A. D’Anna^1, G. De-Amicis^1; Aptina LLC, San Jose, USA; ^1Micron Technology Inc., Avezzano, Italy
14:45-15:00	Wafer Level Cameras – Novel Fabrication and Packaging Technologies Margarete Zoberbier^1, Sven Hansen^1, Marc Hennemayer^1, Dietrich Tönnies^1, Ralph Zoberbier^1, Markus Brehm^2, Andreas Kraft^2, Martin Eisner^3, Reinhard Völkel^3, ^1SUSS MicroTec Lithography, Germany, ^2DELO Industrial Adhesives, Germany, ^3SUSS MicroOptics SA, Switzerland
15:00-15:40	Invited Presentation – II A Four-Side Tileable Back Illuminated, Three-Dimensionally Integrated Megapixel CMOS Image Sensor Vyshnavi Suntharalingam^1, R. Berger^1, S. Clark^2, J. Knecht^1, A. Messier^1, K. Newcomb^1, D. Rathman^1, R. Slattery^1, A. Soares^1, C. Stevenson^1, K. Warner^1,D. Young^1, L.-P. Ang^3, B. Mansoorian^3, D. Shaver^1, ^1MIT Lincoln Laboratory, Lexington, MA, ^2Irvine Sensors Corporation, Costa Mesa, MA, ^3Forza Silicon, Pasadena, CA
15:40-16:00	Break
Session 04	Analysis and trends Session Chair: Edoardo Charbon, Delft Univ., The Netherlands
16:00-16:15	Analysis of Dark Current in 4-Transistor CMOS Imager Pixel with Negative Transfer-gate bias Operation Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami. Toshiba Corporation, Japan
16:15-16:30	Model-Free Power Spectral Density Estimation for Low-Light Level CMOS Imaging Sensors Radu Ispasoiu, José Camara and Boyd Fowler. Fairchild Imaging, Inc., USA
16:30-16:45	Trends in Consumer CMOS Image Sensor Manufacturing R. Fontaine. Chipworks, Canada
Session 05 16:45-18:00	Poster flash presentations Session Chair: Lindsay Grant, ST Microelectronics, UK
P1	Reduction of Band-to-band Tunneling in Deep-submicron CMOS Single Photon Avalanche Photodiodes Robert K. Henderson^1, Justin Richardson^1,2, Lindsay Grant^2. ^1 The University of Edinburgh, Institute for Integrated Micro and Nano Systems, UK; ^2 STMicroelectronics Imaging Division, UK
P2	Flexible binning structure for CCD color imagers Jan Bosiers, Harry van Kuijk, Agnes Kleimann, Inge Peters, Frank Polderdijk. DALSA Professional Imaging, The Netherlands
P3	CMOS image sensor with two-shared pixel and staggered readout architecture J. Bogaerts, G. Meynants, G. Lepage, G. Vanhorebeek, B. Ceulemans, K. Ruythooren. CMOSIS nv, Belgium
P4	Effects of Negative Bias Operation and Optical Stress on Dark Current Takashi Watanabe^1, Jong-Ho Park^1, Satoshi Aoyama^1, Keigo Isobe^1, Shoji Kawahito^1,2. ^1Brookman Technology, Inc., Japan; ^2Research Institute of Electronics, Shizuoka University, Japan
P5	X-ray image sharpening by coincidence detection B. Dierickx^1,2, B. Dupont^1, A. Defernez^1. ^1Caeleste CVBA, Belgium; ^2Vrije Universiteit Brussel (VUB), Belgium
P6	An advanced CMOS Sensor in a novel quadruple well process (INMAPS) for 100% Fill Factor and Full CMOS Pixels J. Ballin^2, R. Coath^1, J. Crooks^1, P. Dauncey^2, A.-M. Magnan^2, Y. Mikami^3, O. Miller^3, M. Noy^2, V. Rajovic^3, M. Stanitzki^1, K. Stefanov^1, R. Turchetta^1, M. Tyndel^1, E. G. Villani^1, N. Watson^3, J. Wilson^3. ^1 Rutherford Appleton Laboratory, UK; ^2Department of Physics, Blackett Laboratory, Imperial College London, UK; ^3School of Physics and Astronomy, University of Birmingham, UK
P7	Validated Dark Current Spectroscopy on a per-pixel basis in CMOS image sensors Eric A. G. Webster^1, Robert Nicol^2, Lindsay Grant^2, David Renshaw^1. ^1School of Engineering & Electronics, University of Edinburgh, UK; ^2STMicroelectronics (R&D) Ltd., UK
P8	Investigating the Ageing Effects on Image Sensors Due to Terrestrial Cosmic Radiation Gayathri G. Nampoothiri^1, Albert J. P. Theuwissen^1, 2. ^1Delft University of Technology, The Netherlands; ^2Harvest Imaging, Belgium BEST POSTER AWARD 2009 IISW
P9	A High Speed Pipelined Snapshot CMOS image sensor with 6.4 Gpixel/s data rate Bart Cremers, Mukund Agarwal, Tom Walschap, Rajiv Singh, Tomas Geurts. Cypress Semiconductor, Belgium
P10	400x400 pixel image sensor for endoscopy in 1.7mm2 CSP Package Bram Wolfs, Cedric Esquenet, Walter Iandolo. Cypress Semiconductor, Belgium. Presenter: Tomas Geurts
P11	Column Fixed Pattern Noise Suppression with STI profile control in 1.75um Pixel CMOS Image Sensor Hoon Jang, Tae Gyu Kim , So Eun Park, Joon Hwang. Dongbu HiTek Co., Ltd., Korea
P12	A small footprint, streaming compliant, versatile wavelet compression scheme for cameraphone imagers L. Alacoque^1, L. Chotard^2, M. Tchagaspanian^1, J. Chossat^2. ^1CEA LETI-MINATEC/SCME, Grenoble, France; ^2STMicroelectronics, Grenoble, France
P13	A Modeling and Evaluation of the Random Telegraph Signal Noise on a CMOS Image Sensor in Motion Pictures Deng Zhang, Hiroaki Ammo^1, Jegoon Ryu, Hirofumi Sumi^1, Toshihiro Nishimura. Graduate school of Information, Production and Systems, WASEDA University; ^1Sony Corporation, Japan
P14	Synchronous and Asynchronous Detection of Ultra-Low Light Levels Christian Lotto^1,3, Peter Seitz^2,3. ^1CSEM SA, Photonics Division, Switzerland; ^2CSEM SA, Nanomedicine Division, Switzerland; ^3EPFL STI IMT-NE, Federal Inst. of Technology, Switzerland
P15	From photons to electrons: a complete 3D simulation flow for CMOS image sensor Axel Crocherie, Pierre Boulenc, Jérôme Vaillant, Flavien Hirigoyen, Didier Hérault, Clément Tavernier. STMicroelectronics, France
P16	Limitations to the frame rate of high speed image sensors G. Meynants, G. Lepage, J. Bogaerts, G. Vanhorebeek, X. Wang. CMOSIS nv, Belgium
P17	A 4k@15,000 LPs High-Accuracy CMOS Linear Sensor Chip with Programmable Gain and Offset and Embedded Digital Correction Francisco Jiménez-Garrido^1, Rafael Domínguez-Castro^1,2, Fernando Medeiro ^1,2, Alberto García, Cayetana Utrera, Rafael Romay, Angel Rodríguez-Vázquez. ^1AnaFocus (Innovaciones Microelectrónicas S.L.), Spain; ^2IMSE-CNM/CSIC and Universidad de Sevilla, Spain
P18	CMOS Image Sensor Sensitivity Improvement via Cumulative Crosstalk Reduction Igor Shcherback^1, Elad Gan^1, Lior Blockstein^2, Orly Yadid-Pecht^1,2. ^1Pixel-Scan, Ltd, Israel; ^2The VLSI Systems Center, Ben-Gurion University, Israel
P19	CMOS image sensor architecture for high speed sparse image content readout A. Dupret^1, B. Dupont^2, M. Vasiliu^1, B. Dierickx^2,3, A. Defernez^2. ^1Institut d’Electronique fondamentale, Université Paris Sud , France; ^2Caeleste CVBA, Belgium; ^3Vrije Universiteit Brussel (VUB), Belgium
P20	CMOS Active Pixel Detectors For Radiography Michael G. Farrier^1, Thorsten Graeve Achterkirchen^1, Gene P. Weckler^1, and J. T. Bosiers^2. ^1Rad-icon Imaging Corp., USA. ^2DALSA Professional Imaging, The Netherlands.
P21	An analog counter architecture for pixel-level ADC Arnaud Peizerat, Michael Tchagaspanian, Christophe Mandier, Bertrand Dupond, CEA/LETI, Grenoble, France
P22	Enhancement of Wide Dynamic Range CCD with 862MHz Data Rate Kasey Boggs, Richard Bredthauer and Greg Bredthauer. Semiconductor Technology Associates, Inc., USA
P23	Ultra small digital image sensor for endoscopic applications Martin Wäny, Stephan Voltz, Fabio Gaspar, Lei Chen. AWAIBA Lda
P24	Comparison of Several Ramp Generator Designs for Column-Parallel Single Slope ADCs Yibing (Michelle) Wang , Sang-Soo Lee, Kwang Oh Kim^1. Hynix Semiconductor America, Inc;,^1Hynix Semiconductor, Korea
18:00-18:45	Poster Viewing
19:00-21:00	Dinner
Saturday March 27, 2009
Session 06	Charge-Coupled Devices Session Chair: Junichi Nakamura, Aptina Imaging, Japan
08:30-09:10	Invited Presentation – III Backside Illuminated Image Sensors manufactured with Gradated Double Epitaxial Layers: an Application to a High-speed High-sensitivity Image Sensor T. G. Etoh^12, T. Hayashida^2, H. Maruyama^2, T. Arai^2, N. Uchiyama^3 and T. Sakamoto^3, ^1Kinki University, Japan, ^2NHK, Japan, ^3Hamamatsu Photonics, Japan
09:10-09:25	Very-low Dark Current in FF-CCDs I. M. Peters, E. W. Bogaart, W. Hoekstra, A. C. M. Kleimann, J. T. Bosiers. DALSA Professional Imaging, The Netherlands
09:25-09:40	Design and Characterization of Submicron CCDs in CMOS Keith Fife, Abbas El Gamal, H.-S. Philip Wong. Department of Electrical Engineering, Stanford University, USA
09:40-09:55	A 2/3-inch Low Noise HDTV FT CCD-Imager for 1080i180, 1080ip90 and 720p120 Scanning at Constant Image Diagonal Peter Centen^1, Holger Stoldt^2, Jan Visser^3, Jan T. Bosiers^2. ^1 Grass Valley, The Netherlands, ^2DALSA Professional Imaging, The Netherlands; ^3NIKHEF, The Netherlands
09:55-10:10	High saturation output 1.55mm square pixel IT-CCD with metal wiring line structure in a pixel Takeshi Takeda, Yoshiaki Kitano, Shinji Miyazawa, Junji Yamane, Keita Suzuki, Kunihiko Hikichi, Kaori Tai, Kotaro Harazono^1, Shogo Numaguti^2, Yoshinori Uchida, Masao Kimura, Mitsuru Sato, Hideo Kanbe, Nobuhiro Karasawa. Semiconductor Business Group, Sony Corporation; ^1Sony Semiconductor Kyusyu Corporation; ^2Sony LSI Design Inc., Japan
10:10-10:25	High Speed Impactron CCD Line Sensor with Color Sensing Capability Izumi Kobayashi^1, Jaroslav Hynecek^2, ^1Texas Instruments Japan LTD.; ^2Isetex, Inc., USA
10:25-10:35	Break
Session 07	Various imager design topics - I Session Chair: Jaroslav Hynecek, Isetex, TX, USA
10:35-10:50	Characterization of In-Pixel Buried-Channel Source Follower with Optimized Row Selector in CMOS Image Sensors and REVISED AFTER IISW Yue Chen, Xinyang Wang, Adri J. Mierop, Albert J.P. Theuwissen. Electronic Instrumentation Lab, Delft University of Technology, Netherlands.
10:50-11:05	A Monolithic Ge-on-Si CMOS Imager for Short Wave Infrared B. Ackland, C. Rafferty, C. King, I. Aberg, J. O’Neill, T. Sriram, A. Lattes, C. Godek, S. Pappas. NoblePeak Vision, USA
11:05-11:20	Integrated Polarization Image Sensor for Cell Detection Viktor Gruev^1, Jan Van der Spiegel^2, Nader Engheta^2. ^1Washington University in St. Louis, Missouri, USA; ^2University of Pennsylvania, Pennsylvania, USA
11:20-11:35	Polarization-analyzing CMOS image sensor with embedded wire-grid polarizers Takashi Tokuda, Hirofumi Yamada, Hiroya Shimohata, Kiyotaka, Sasagawa, Jun Ohta. Graduate School of Materials Science, Nara Institute of Science and Technology, Japan
11:35-11:50	Retinal stimulator embedded with light-sensing function in distributed microchip architecture for subretinal implantation Jun Ohta^1, Takashi Tokuda^1, Kohei Hiyama^1, Shigeki Sawamura^1, Kiyotaka, Sasagawa^1, Kentaro Nishida^2, Yoshiyuki Kitaguchi^2, Motohiro Kamei^2, Takashi Fujikado^2, Yasuo Tano^2. ^1Graduate School of Materials Science, Nara Institute of Science and Technology, Japan; ^2Graduate School of Medicine, Osaka University, Japan
11:50-12:05	4.5 μm Pixel Pitch 154 ke- Full Well Capacity CMOS Image Sensor Koichi Mizobuchi^1, Satoru Adachi^1, Hirokazu Sawada^1, Katsumi Ohta^1, Hiromichi Oshikubo^1, Nana Akahane^2, Shigetoshi Sugawa^2, ^1Texas Instruments, Ibaraki, Japan,^2Graduate School of Engineering, Sendai, Japan
12:05-13:30	Lunch
13:30-18:00	Social event/excursion
18:00-18:45	Poster Viewing
19:00-21:00	Gala Dinner/WKA/ Best Poster Award
Sunday March 28, 2009
Session 08	3D Range Imaging Session Chair: Koichi Mizobuchi, Texas Instruments Japan
08:30-09:10	Invited Presentation – IV Image Sensor Technologies for 3D Time-of-flight Range Imaging Thierry Oggier, Mesa Imaging, Switzerland
09:10-09:30	High Speed Dual Port Pinned-photodiode for Time-Of-Flight Imaging Cédric Tubert^1,3, Laurent Simony^1, François Roy^2, Arnaud Tournier^2, Luc Pinzelli^2, Pierre Magnan^3. ^1STMicroelectronics Grenoble, France; ^2STMicroelectronics Crolles, France; ^3ISAE/CIMI, France
09:30-09:45	Ultra High Speed 3-D Image Sensor Shingo Mandai^1, Toru Nakura^2, Makoto Ikeda^2 and Kunihiro Asada^2. ^1Dept. of Electronic Engineering, University of Tokyo, Japan; ^2VLSI Design and Education Center(VDEC), University of Tokyo, Japan
09:45-10:00	A 32x32 50ps Resolution Time to Digital Converter Array in 130nm CMOS for Time Correlated Imaging. Justin Richardson^1,2, Richard Walker^1,2, Lindsay Grant^2, David Stoppa^3, Fausto Borghetti^3, Edoardo Charbon^4,5, Marek Gersbach^4,5, Robert K. Henderson^1. ^1 The University of Edinburgh, Edinburgh, UK; ^2STMicroelectronics, Imaging Division, Edinburgh, UK; ^3Fondazione Bruno Kessler, Trento, Italy; ^4EPFL, Lausanne, Switzerland; ^5TU Delft, Delft, The Netherlands;
10:00-10:15	Random Telegraph Signal in Single-Photon Avalanche Diodes Mohammad Azim Karami^1, Cristiano Niclass^2, Edoardo Charbon^1,2, ^1Faculty of EEMSC, Delft University of Technology, Netherlands; ^2Department of ECE, Ecole Polytechnic Fédérale Lausanne (EPFL), Switzerland
10:15-10:30	A Low Dark Count Single Photon Avalanche Diode Structure Compatible with Standard Nanometer Scale CMOS Technology Justin Richardson^1,2, Lindsay Grant^2, Robert K. Henderson^1. ^1The University of Edinburgh, Institute for Integrated Micro and Nano Systems, UK; ^2STMicroelectronics Imaging Division, UK
10:30-10:45	Break
Session 09	High energy particle detection Session Chair: Bart Dierickx, Caeleste, Belgium
10:45-11:00	Characterization of 3D integrated APS for X-ray detection G. Prigozhin^1 V. Suntharalingam^2, D. Busacker^2, R. Foster^1, S. Kissel^1, B. LaMarr^1, A. Soares^2 M. Bautz^1. ^1Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, USA; ^2Lincoln Laboratory, Massachusetts Institute of Technology, USA
11:00-11:40	Invited Presentation – V Flat-Panel Imaging Arrays for Digital Radiography Timothy Tredwell^1, Jeff Chang^1, Jackson Lai^1, Greg Heiler^1, John Yorkston^1, Jin Jang^2, Jae Won Choi^2, Jae Ik Kim^2, Seung Hyun Park^2, Jun Hyuk Cheon^2, Sauabh Saxena^2, Won Kyu Lee^2, Arokia Nathan^3, Eric Mozdy^4, Sung Eun Ahn^4, Carlo Kosik Williams^4, Jeffery Cites^4, Chuan Che Wang^4. ^1Carestream Health, Rochester, NY, ^2Advanced Display Research Center, Kyung Hee University, Seoul, Korea, ^3London Center for Nanotechnology, University College, London, ^4Corning Incorporated, NY, USA
11:40-12:00	Reset noise reduction architectures for the detection of charged particles R. Turchetta^1, T. Anaxagoras^1,2, J. Crooks^1, A. Godbeer^1, N. Allinson^2, T. Pickering^1, A. Blue^3, D. Maneuski^3, V. O’Shea^3. ^1 Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), U.K; ^2Sheffield University, Department of Electronic and Electrical Engineering, UK; ^3University of Glasgow, Department of Physics and Astronomy, UK
12:00-13:30	Lunch
Session 10	Invited Presentation, High energy particle detection and Large format arrays Session Chair: Pierre Magnan, ISAE/CIMI, Toulouse, France
13:30-13:45	Optoelectrical Performance Evolution of CMOS Image Sensors Exposed to Gamma Radiation V. Goiffon, M. Estribeau, P. Magnan. ISAE, Toulouse, France
13:45-14:00	A radiation tolerant 4T pixel for space applications Manuel Innocent. Cypress Semiconductor, Belgium.
14:00-14:15	Large-Format Medical X-Ray CMOS Image Sensor for High Resolution High Frame Rate Applications R. Reshef, T. Leitner, S. Alfassi, E. Sarig, N. Golan, O. Berman, A. Fenigstein, H. Wolf, G. Hevel, S. Vilan and A. Lahav. Tower Semiconductor LTD, Israel
14:15-14:30	A wafer-scale CMOS APS imager for medical X-ray applications L. Korthout, D.Verbugt, J.Timpert, A.Mierop, W.de Haan, W.Maes, J. de Meulmeester, W. Muhammad, B. Dillen, H. Stoldt, I. Peters, E. Fox. DALSA Professional Imaging, The Netherlands
14:30-14:45	Progress in 1.25-inch Digital-Output CMOS Image Sensor Developments for UDTV Application I. Takayanagi, S. Osawa, T. Bales, K. Kawamura, N. Yoshimura, K. Kimura, H. Sugihara, E. Pages, A. Andersson, S. Matsuo, T. Oyama, M. Haque, H. Honda, T. Kawaguchi, M. Shoda, B. Almond^1, P. Pahr^2, S. Desumvila^1, D. Wilcox^1, Y. Mo^3, J. Gleason^3, T. Chow^3, J. Nakamura. Aptina Japan, LLC.; ^1 Aptina UK, Ltd.; ^2 Aptina Norway, AS.; ^3Aptina LLC, USA
14:45-15:00	A 2.5 inch, 33Mpixel, 60 fps CMOS Image Sensor for UHDTV Application Steven Huang, Takayuki Yamashita^1, Yibing Wang, Kai Ling Ong, Kohji Mitani^1, Ryohei Funatsu^1, Hiroshi Shimamoto^1, Lin Ping Ang, Loc Truong, Barmak Mansoorian. Forza Silicon Corporation, USA; ^1NHK Science and Technical Laboratories
15:00-15:40	Invited Presentation – VI Image artifacts caused by pixel bias cells in CMOS imagers targeted for mobile applications Matthew Purcell, ST Microelectronics, U.K.
15:40-16:00	Break
Session 11	Various imager design topics - II Session Chair: Renato Turchetta, Rutherford Appleton Laboratory, Didcot, U.K.
16:00-16:15	A 1/3.4-inch 2.1-Mpixel 240-frames/s CMOS Image Sensor ^1Seunghyun Lim, ^1Jimin Cheon, ^1Youngcheol Chae, ^2Wunki Jung, ^2Dong-Hun Lee,^2Seogheon Ham, ^1Dongsoo Kim, and ^1Gunhee Han. ^1Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea. ^2System LSI Division, Semiconductor Business, Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea
16:15-16:30	Noise Reduction Effects of Column-Parallel Correlated Multiple Sampling and Source-Follower Driving Current Switching for CMOS Image Sensors Shoji Kawahito, Sungho Suh, Takuma Shirei, Shinya Itoh, Satoshi Aoyama^1. Research Institute of Electronics, Shizuoka University; ^1Brookman Technology, Inc., Japan;
16:30-16:45	12Mpixel snapshot shutter CMOS image sensor with 5.5um pixels operating @33fps with high shutter efficiency Yannick De Wit, John Compiet, Bartosz Banachowicz, Vladimir Korobov, Gert Schippers. Cypress Semiconductor, Belgium
16:45-17:00	Implementing Global Shutter in a 4T Pixel A. Krymski. Alexima, USA
17:00-17:15	Two-Stage Charge Transfer Pixel Using Pinned Diodes for Low-Noise Global Shutter Imaging Keita Yasutomi^1, Shinya Itoh^1, Shoji Kawahito^1, Toshihiro Tamura^2. ^1Research Institute of Electronics, Shizuoka University, Japan; ^2Photron Ltd., Japan
17:15-17:30	Design of photo-electron barrier for the Memory Node of a Global Shutter pixel based on a Pinned Photodiode Assaf Lahav^1, Adi Birman, Muriel Cohen, Tomer Leitner, Amos Fenigstein. 1 Tower Semiconductor LTD, Israel
17:30-17:45	Wide Dynamic Range Low Light Level CMOS Image Sensor Boyd Fowler, Chiao Liu, Steve Mims, Janusz Balicki, Wang Li, Hung Do, Paul Vu. Fairchild Imaging, Inc., USA
17:45-18:00	A 1280x960 3.75um pixel CMOS imager with Triple Exposure HDR Johannes Solhusvik^1, Sohrab Yaghmai^1, Arthur Kimmels^1, Christian Stephansen^1, Alf Storm^1, Jenny Olsson^1, Anders Rosnes^1, Tore Martinussen^1, Trygve Willassen^1, Per Olaf Pahr^1, Siri Eikedal^1, Steve Shaw^2, Ranjit Bhamra^2, Sergey Velichko^3, Dan Pates^3, Sachin Datar^3, Scott Smith^3, Lingtao Jiang^3, Dave Wing^3, Ajaya Chilumula^3, ^1Aptina Imaging, Oslo, Norway,^2Aptina Imaging, Bracknell, UK, ^3Aptina Imaging, San Jose, CA, USA
18:00-18:05	Closing remarks Nobukazu Teranishi – IISW Steering Committee and Host in 2011
19:00-21:00	Dinner