9-14-2013
	2013 INTERNATIONAL IMAGE SENSOR WORKSHOP
	Snowbird Resort, Utah, USA
	June 12-16, 2013
	PROGRAM
Wednesday June 12, 2013
17:30-20:30 pm	Reception
Thursday, June 13, 2013
7:00 - 8:30	Breakfast
8:30 - 8:45	Welcome and Opening
	Eric R. Fossum, Co-Chair and President, IISS
	Boyd Fowler, Co-Chair
Session 01	Pixel Technology Overview and Small Pixel Sensors
	Session chair: Nobukazu Teranishi (University of Hyogo / Shizuoka University)
08:45 – 09:00	Innovative Technology Elements for Large and Small Pixel CIS Devices
1.01	Ray Fontaine, Technology Analysis Group, Chipworks, Inc. Ottawa, Canada.
09:00 – 09:15	Blooming and Antiblooming in 1.1um-Pixel CIS
1.02	Calvin Chao, Kuo-Yu Chou, Charles Liu, Yi-Che Chen, Hon-Yih Tu,
	Hsiu-Yu Cheng, Fu-Lung Hsueh, and Shou-Gwo Wuu,
	Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
09:15 – 09:30	Development of Lensed Color Filter Technology for Higher SNR and Lower
1.03	Crosstalk CMOS Image Sensor
	Hong-Ki Kim, Bumsuk Kim, Jung-Saeng Kim, *Jungkuk Park, Yooseung Lee,
	Taesub Jung, Kyungho Lee, Heegeun Jung, Chang-Rok Moon, JungChak Ahn,
	Goto Hiroshige, Chi-Young Choi and Duckhyung Lee; LSI Product & Technology, System
	LSI Division, Samsung Electronics Co., Ltd.; *Color Filter Technology Group, System LSI,
	Division, Samsung Electronics Co., Ltd, Yongin-City, Gyeonggi-Do, Korea.
09:30 – 09:45	Architecture and Development of Next Generation Small BSI Pixels
1.04	H. Tian, H. Komori, G. Agranov, J. Bai, J. Hynecek, C. Baron, H-W. Lee,
	X. Zhao, W. Gazeley, D. Tekleab, S. Nagaraja, W. Gao, P. Adepu,
	V. Rajasekaran, A. Rayankula, U. Boettiger, M. Mooney, B. Vaartstra,
	Aptina Imaging, San Jose, CA, USA.
09:45 – 10:10	Break
Session 02	Imaging Process and Specialty Pixels
	Session co-chairs: Shou-Gwo Wuu (TSMC), Jungchak Ahn (Samsung)
10:10 – 10:25	Fundamental Ion Implantation Technologies for Image Sensor Devices	Revised
2.01	G. Fuse, and M. Sugitani SEN Corporation, Saijo, Japan.
10:25 – 10:40	The Impact of Gate Edge Damage on Pixel Read Noise
2.02	Jhy-Jyi Sze, R.J. Lin, Seiji Takahashi, J.M. Hung, Y.C. Lu, T.H. Tseng, C.C.
	Wang, S.F. Ting, and Shou-Gwo Wuu, Taiwan Semiconductor Manufacturing
	Company, Taiwan, R.O.C.
10:40 – 10:55	Photolithographic Solutions for Image Sensors with High Pixel Density
2.03	Ryo Sasaki, Yuhei Sumiyoshi, Yasuo Hasegawa and Seiya Miura, Canon Inc.,
	Tochigi, Japan.
10:55 – 11:10	Dark Current Reduction in Image Sensors through Metals Gettering:
2.04	A Critical Review of Disruptive Techniques
	Venkataramana R. Chavva, Kyu-Ha Shim, and Todd Henry, Applied Materials.–.
	Varian semiconductor Equipment, Gloucester, MA, USA.
11:10 – 11:25	The DUV Stability of Superlattice-doped CMOS Detector Arrays
2.05	M. E. Hoenk, A. G. Carver, T. Jones, M. Dickie, P. Cheng, F. Greer, S. Nikzad
	(Jet Propulsion Laboratory, California Institute of Technology, CA, USA),
	J. Sgro (Alacron, Inc., Nashua, NH, USA), S. Tsur (Applied Materials Inc.,
	Process, Diagnostics & Control, Rehovot, Israel).
11:25 – 11:40	High Quantum Efficiency Back Illuminated Photon Counting, Far UV, UV,
2.06	and Visible Detector Arrays and their High Throughput Fabrication
	Shouleh Nikzad, M. E. Hoenk, A. Carver, T.J. Jones, F. Greer, E. Hamden, and
	T. Goodsall, Jet Propulsion Laboratory, California Institute of Technology, USA.
11:40 – 13:10	Lunch
Session 03	Specialty Pixels and Application Specific Imagers
	Session chair: Daniel Van Blerkom (Forza Silicon),
13:10 – 13:25	A 240x180 120dB 10mW 12us‐latency Sparse Output Vision Sensor	Slides
3.01	for Mobile Applications
	Raphael Berner, Christian Brandli, Minhao Yang, Shih-Chii Liu and
	Tobi Delbruck, Inst. of Neuroinformatics, University of Zurich and ETH Zurich,
	Zurich, Switzerland.
13:25 – 13:40	Two-color Indirect X-ray Photon Counting Image Sensor
3.02	Bart Dierickx, Stijn Vandewiele, Benoit Dupont, Arnaud Defernez, Nick
	Witvrouwen, Dirk Uwaerts, Caeleste, Antwerp, Belgium.
13:40 – 13:55	Fully Organic Integrated Arrays on Flexible Substrates for X-Ray Imaging	Slides
3.03	Pawel E. Malinowski^1, Abhishek Kumar^2, Date J.D. Moet^2, David Cheyns^1,
	Barry P. Rand^1, Jan-Laurens P.J. van der Steen^2, Kris Myny^1, Soeren Steudel^1,
	Matthias Simon^3, Gerwin Gelinck^2, and Paul Heremans^1,2; ^1IMEC, Leuven, Belgium;
	^2Holst Centre, Eindhoven, The Netherlands, ^3Philips Research, Eindhoven,
	The Netherlands.
13:55 – 14:10	MEM-FLIM, a CCD Imager for Fluorescence Lifetime Imaging Microscopy
3.04	Jan Bosiers, Harry van Kuijk, Wilco Klaassens, René Leenen, Willem Hoekstra,
	Walter de Laat, Agnes Kleimann, Inge Peters, Jan Nooijen, Qiaole Zhao^1,
	Ian Ted, Young^1, Sander de Jong^2, Kees Jalink^3,Teledyne DALSA Professional
	Imaging, The Netherlands, ^1Delft University of Technology, Delft, NL; ^2Lambert
	Instruments, Roden, NL; ^3Netherlands Cancer institute, Amsterdam, NL.
14:10 – 14:25	A Direct-Detection X-Ray Cmos Image Sensor with 500 μm Thick High
3.05	Resistivity Silicon
	T. Hatsui^1,2, M. Omodani^2, T. Kudo^1, K. Kobayashi^1,2, T. Imamura^3，T. Ohmoto^3,
	A. Iwata^3，S. Ono^1，Y. Kirihara^1，T. Kameshima^2, H. Kasai^4, N. Miura^4,
	N. Kuriyama^4, M. Okihara^5, Y. Nagatomo^5, M. Nagasaki^6, T. Watanabe^7,
	Makina Yabashi^1,2, ^1RIKEN Spring-8 Center, ^2JASRI, ^3A-R-Tec Corp.,
	^4LAPIS Semiconductor Miyagi Co., Ltd., ^5LAPIS Semiconductor Co., Ltd.,
	^6ARKUS Inc, ^7University of Hyogo, Japan.
14:25 – 14:40	A FSI CMOS Image Sensor with 200-1000 nm Spectral Response and
3.06	High Robustness to Ultraviolet Light Exposure
	Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda,
	Katsuhiko Hanzawa and Shigetoshi Sugawa, Graduate School of Engineering,
	Tohoku University, Miyagi, Japan.
14:40 – 15:05	Break
Session 04	Noise.
	Session chair: Tetsuo Nomoto (SONY)
15:05 – 15:20	Read Noise Distribution Modeling for CMOS Image Sensors
4.01	Boyd Fowler, Dan McGrath, and Peter Bartkovjak, BAE Systems Imaging
	Solutions, Milpitas, CA 95035 USA.
15:20 – 15:35	Novel Device with Ultra Low Noise for Smaller CMOS Image Sensor Pixel
4.02	T.H. Hsu, Shou-Gwo Wuu, D.N. Yaung, J.C. Liu, H.H. Tseng, W.D. Wang,
	W.C. Hsu, W.I. Hsu, T.J. Wang, Y.L. Tu, C.S. Tsai, W.P. Mo, C.E. Chen
	Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, R.O.C.
15:35 – 15:50	New Model of Dark Fixed Pattern Noise Generation in CMOS Imager
4.03	Pixel with Negative Transfer-Gate Bias Operation
	H. Sasaki, Y. Higashi, H. Yamashita, T. Yoshida, N. Momo, T. Ohguro,
	H. S. Momose, and Y. Toyoshima, Toshiba Corporation, Yokohama, Japan.
15:50 – 16:05	Emission Microscopy analysis of hot cluster defects of imagers processed on SOI
4.04	G. Meynants, W. Diels, J. Bogaerts, W. Ogiers, CMOSIS, Antwerp, Belgium.
16:05 – 16:30	Break
Session 05	Poster Flash Presentations
16:30 – 17:30	Session chair: Bart Dierickx (Caeleste)
5.01	Feed-Forward Voltage in CMOS Pinned Photodiodes
	Mukul Sarkar (Indian Institute of Technology Delhi), Bernhard Büttgeny
	(Mesa Imaging), and Albert J.P. Theuwissen (University of Technology
	Delft/Harvest Imaging).
5.02	1280x1024 Logarithmic Snapshot Image Sensor with Photodiode in
	Solar Cell mode
	Yang Ni, New Imaging Technologies SA, France.
5.03	New Monolithic CMOS Sensors on a Fully Isolated Substrate
	Abderrezak Mekkaoui, Dario Gnani, Maurice Garcia-Sciveres, Lawrence Berkeley
	National Laboratory, Berkeley, CA, USA.
5.04	Logarithmic Image Sensor for Wide Dynamic Range Stereo Vision System
	Christian Bouvier,
	Yang Ni, New Imaging Technologies SA, France.
5.05	Segmented-base CMOS Image Sensor for Machine Vision Application
	Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto
	Tokyo University of Science, Tokyo, Japan.
5.06	1.1um Back-Side Illuminated Image Sensor Performance Improvement
	Chi Han_Lin ^1(a), Chih-Kung Chang ^1, Yu-Kun Hsiao^1, Yueh-Ching Cheng^1
	Chih-Cherng Jeng^2, Kuo-Cheng Lee^2, Chun-Hao Chou^2, Yi-Yi Cheng^2,
	Yen-Hsung Ho^2, Yin-Chieh Huang^2, Chin-Chuan Hsieh^1;
	^1VisEra Technologies Company, Hsinchu Science Park, Taiwan; ^2: Taiwan
	Semiconductor Manufacturing Company, Hsinchu Science Park, Taiwan.
5.07	CF/ML Shift Optimization for Small Pixel CMOS Image Sensor through
	FDTD Simulation
	Wu-Cheng Kuo^1, Wei-Chieh Chiang^2, Ren-Jie Lin^2, Yu-Kun Hsiao^1, Jen-Cheng Liu^2,
	Tsung-Hao Lin^1, Hui-Min Yang1, D.N. Yaung^2, and Shou-Gwo Wuu^2, Chin-Chuan Hsieh^1
	^1VisEra Technologies Company, Hsinchu Science Park, Taiwan
	^2Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Taiwan.
5.08	The Image Quality Standard based on Human Visual System for the Spectral
	Sensitivity Crosstalk Depending on Lens F-number
	Kazuyuki Matsushima, Masaaki Sato, Shinichiro Saito, Sony Corporation,
	Tokyo, Japan.
5.09	Application Demonstration Of Polarization-Analyzing CMOS Image Sensor
	and Performance Improvement Using 65 nm Standard CMOS Process
	Takashi TOKUDA, Norimitsu WAKAMA, Toshihiko NODA, Kiyotaka SASAGAWA,
	Kiyomi KAKIUCHI, and Jun OHTA, Graduate School of Materials Science, Nara
	Institute of Science and Technology, Nara, Japan.
5.10	Image Sensor Performance from a Security Camera Perspective
	Anders Johannesson and Henrik Eliasson, Axis Communications AB, Lund, Sweden.
5.11	A Passive Integrator to Achieve Low Power, Low Noise Signal Amplification
	Yannick De Wit, ON-Semiconductor, Mechelen, Belgium.
5.12	BSI Low Light Level CMOS Image Sensor Employing P-type Pixel
	John Tower, James Janesick, Thomas Senko, Peter Levine, Mark Grygon, James Andrews,
	Judy Zhu, Thomas Vogelsong, SRI International, Princeton, NJ, USA
	Guang Yang, Steven Huang, Chao Sun, Barmak Mansoorian, Forza Silicon Corporation,
	Pasadena, CA, USA.
5.13	A Low Power Counting Method in Ramp ADCs used in CMOS Image Sensors
	Cheng Ma, Xinyang Wang, ChangChun Institute of Optics, Fine Mechanics and Physics,
	Chinese Academy of Science, Changchum, China.
5.14	Single Slope ADC with On-chip Accelerated Continuous-time Differential Ramp
	Generator for Low Noise Column-Parallel CMOS Image Sensor
	Dexue Zhang, Rami Yassine, Loc Truong, Jeff Rysinski, Daniel Van Blerkom and
	Barmak Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA.
5.15	Division-of-Focal-Plane Spectral-Polarization Imaging Sensor
	Viktor Gruev, Meenal Kulkarni, Department of Computer Science and Engineering,
	Washington University in Saint Louis, Saint Louis, MO, USA.
5.16	Simple Technique to Reduce FPN in a Linear-Logarithm APS
	Carlos A. de Moraes Cruz^(*)(**), Davies W. de Lima Monteiro^(***), Gilles Sicard^(****)
	and Alexandre K. P. Souza^(*), ^(*)Department of Electronics and Computation,
	Universidade Federal do Amazonas, Manaus, AM, Brazil; ^(**)Graduate Program in
	Electrical Engineering - Federal University of Minas Gerais, Belo Horizonte, MG,
	Brazil;^(***)Department of Electrical Engineering, DEE/PPGEE, Universidade
	Federal de Minas Gerais, Belo Horizonte, MG, Brazil; ^(****)TIMA Laboratory,
	CNRS, Grenoble INP, Grenoble, France.
5.17	Reduction of Motion Blur in CMOS Linear Arrays and TDI Imagers
	Benoit Dupont, Bart Dierickx, Caeleste, Antwerp, Belgium.
5.18	Column-Parallel Architecture for Line-of-Sight Detection Image Sensor based	Revised
	on Centroid Calculation
	Hayato Kawakami, Satori Igarashi, Yuta Sasada, Junichi Akita, School of Electrical and
	Comp. Eng., Kanazawa University, Kanazawa, Ishikawa, Japan.
5.19	Image Lag Analysis and Photodiode Shape Optimization of 4T CMOS Pixels	Revised
	Yang Xu^1, Albert J.P. Theuwissen^1, 2; ^1: Delft University of Technology, Delft,
	the Netherlands; 2: Harvest Imaging, Bree, Belgium.
5.20	A Radiation Tolerant 4T pixel for Space Applications: Layout and
	Process Optimization
	Manuel Innocent, ON Semiconductor, Mechelen, Belgium.
Friday, June 14, 2013
7:00 - 8:30	Breakfast
Session 06	Avalanche Photo Diode and Photon Counting
	Session chair: Lindsay Grant (ST Microelectronics)
8:30 – 8:45	CMOS Image Sensors Based on Linear Mode APDs: Analysis and
6.01	Future Perspectives
	Lucio Pancheri ^a, Olga Shcherbakova ^a,b, Nicola Massari^b, Gian-Franco Dalla Betta^a
	and David Stoppa^b, ^a: University of Trento, Trento, Italy; ^b: Fondazione Bruno Kessler,
	Trento, Italy.
8:45 – 9:00	Two-Dimensional Mapping of Photon Counts in Low-Noise	Revised
6.02	Single-Photon Avalanche Diodes
	Jau-Yang Wu, Shu-Cheng Li, Fang-Ze Hsu, and Sheng-Di Lin, Department of
	Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan.
9:00 – 9:15	9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias	Slides
6.03	Controlled Sensitivity
	Neale A.W. Dutton ^1, 2, Lindsay A. Grant^1, Robert K. Henderson^2
	^1ST Microelectronics Imaging Division, Pinkhill, Edinburgh, UK,
	^2The University of Edinburgh, Edinburgh, UK.
9:15 – 9:30	Stabilizing Sensitivity in Large Single-Photon Image Sensors with an
6.04	Integrated 3.3-to-25V All-Digital Charge Pump
	Shingo Mandaiy and Edoardo Charbon, Delft University of Technology, Delft,
	The Netherlands.
9:30 – 9:45	A 92k SPAD Time-Resolved Sensor in 0.13μm CIS Technology for	Slides
6.05	PET/MRI Applications
	Richard J. Walker^1, Leo H. C. Braga^2, Ahmet T. Erdogan^1, Leonardo Gasparini^2,
	Lindsay A. Grant^3, Robert K. Henderson^1, Nicola Massari^2, Matteo Perenzoni^2,
	David Stoppa^2; ^1CMOS Sensors and Systems (CSS) Group, School of Engineering,
	The University of Edinburgh, Edinburgh, UK; ^2Smart Optical Sensors and Interfaces
	(SOI) Group, Fondazione Bruno Kessler (FBK), Trento, Italy; ^3Imaging Division,
	STMicroelectronics, Edinburgh, UK.
9:45 – 10:00	Monolithic Integration of LEDs and Silicon Photomultipliers in Standard
6.06	CMOS Technology for Consumer Applications
	Nupur Lodha, Shingo Mandai, and Edoardo Charbon; Circuits and Systems,
	Delft University of Technology, Delft, The Netherlands.
10:00 – 10:15	Silicon Integrated Electrical Micro-Lens for CMOS SPADs based on
6.07	Avalanche Propagation Phenomenon
	Chockalingam Veerappan, Student Member IEEE, Yuki Maruyama, Member IEEE,
	Edoardo Charbon, Senior Member IEEE.
10:15 – 10:40	Break
Session 07	Poster Flash Presentations II
10:40 – 12:00	Session chair: Johannes Solhusvik (Omnivision)
7.01	Device Simulation with Electromagnetic Field Propagation Models for	Slides
	High-Speed Image Sensors and FDA Noise Analysis
	Hideki Mutoh, Link Research Corporation, Odawara, Kanagawa, Japan.
7.02	Monolithic Integration of Flexible Spectral Filters with CMOS Image Sensors
	at Wafer Level for Low Cost Hyperspectral Imaging
	Murali Jayapala, Andy Lambrechts, Nicolaas Tack, Bert Geelen, Bart Masschelein,
	Philippe Soussan , IMEC, Leuven, Belgium.
7.03	Prototype TDI Sensors in Embedded CCD in CMOS technology
	Alper Ercan^1, 2, Luc Haspeslagh^1, Koen De Munck^1, Kyriaki Minoglou^1, Anne Lauwers^1,
	Piet De Moor; ^1Imec, Heverlee, Belgium; ^2ESAT KU Leuven, Heverlee, Belgium.
7.04	A Dual Exposure Method for Wide Dynamic Range Operation of CMOS
	Image Sensors
	Woon-Il Choi, Hashimoto Masashi^1, Masayuki Uno^2 and Hi-Deok, Dept. of Electronics
	Engi., Chungnam National Univ., Daejeon, Korea; ^1: LG Innotek, Ansan, Kyeonggi,
	Korea; ^2: Linear Cell Design Corp. Ina-shi, Nagano, Japan.
7.05	A Low-Invasive Micro Imaging Device for Measuring Neural Activities
	Implanted in the Mouse Deep Brain
	Jun Ohta, Chiakra Kitsumoto, Makito Haruta, Yoshinori Sunaga, Toshihiko Noda,
	Kiyotaka Sasagawa,Takashi Tokuda, Mayumi Motoyama, and Yasumi Ohta
	Graduate School of Materials Science, Nara Institute of Science and Technology,
	Nara, Japan.
7.06	Designing Incremental Sigma-Delta ADCs for Low Thermal Noise in	Revised
	Image Sensors
	Adi Xhakoni, Georges Gielen, KU Leuven, Dept. Elektrotechniek ESAT-MICAS,
	Leuven, Belgium.
7.07	Digital Integration Sensor	Revised
	Song Chen, Andrew Ceballos, and Eric R. Fossum, Thayer School of Engineering	Slides
	at Dartmouth, Hanover, NH, USA.
7.08	Design of Analog Readout Circuitry with Front-end Multiplexing for
	Column Parallel Image Sensors
	Steven Huang, David Estrada, Daniel Van Blerkom and Barmak Mansoorian,
	Forza Silicon Corporation, Pasadena, CA, USA.
7.09	RF Design Issues and Challenges in a CMOS Image Sensor Process
	Loc Truong, Dexue Zhang, Tomer Leitner^1 and Barmak Mansoorian, Forza
	Silicon Corporation, Pasadena, CA, USA, ^1: Tower Semiconductor LTD.
7.1	A 120μW Vision Chip with ROI Detection
	Arnaud Verdant, Antoine Dupret, Patrick Villard, Laurent Alacoque (CEA - LETI – MINATEC
	Campus, Grenoble, France), Hervé Mathias, Flavien Delgehier (IEF, Orsay, France).
7.11	Design of Pixel for High Speed CMOS Image Sensors
	Zhongxiang Cao, Yangfan Zhou, Quanliang Li, Qi Qin, Liyuan Liu, and Nanjian Wu
	State Key Laboratory of Superlattices and Microstructures, Institute of
	Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.
7.12	A Multi-Channel Digital Silicon Photomultiplier Array for Nuclear Medical
	Imaging Systems based on PET-MRI
	Shingo Mandaiy and Edoardo Charbon, Delft University of Technology, Delft,
	The Netherlands.
7.13	Real-time Calibration of a 14-Bit Single Slope ADC with 290MHz
	On-chip Accelerated Ramp Generator for Column-Parallel Image Sensors
	Jonathan Bergey, Sam Bagwell, Jackson Law, Wilson Law, Forza Silicon
	Corporation, Pasadena, CA, USA
7.14	A Novel Architecture for the Implementation of a Family of High Speed,
	Multi-line CMOS Image Sensors
	M. Moser, E. Fox, D. Deering, P. Donegan, M. Sonder, D. Marchesan, D. Verbugt,
	Binqiao Li, Feng-Hua Feng, Shujuan Xie, N. Safavian, R. Ghannoum, H. Mei,
	TELEDYNE DALSA Corporation, Waterloo, ON, Canada.
7.15	On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode	Revised
	Capacitance and Transfer Gate Channel Potential
	Vincent Goiffon^1, Julien Michelot^2, Pierre Magnan^1, Magali Estribeau^1, Olivier
	Marcelot^1, Paola Cervantes^1, Alice Pelamatti^1, and Philippe Martin-Gonthier^1,
	^1ISAE, Université de Toulouse, Toulouse, France; ^2Pyxalis, Grenoble, France.
7.16	Novel Auto-Adaptative Integration-Time Technique for CMOS Image Sensor
	Hassan Abbass^1, Hawraa Amhaz^1, David Alleyson^2, Gilles Sicard1, ^1TIMA
	Laboratory (CNRS, Grenoble INP, UJF, ^2LPNC Laboratory, Pierre Mendes
	France University, Grenoble, France.
7.17	A Broadcast Quality 2.3MP CMOS Image Sensor with Dynamic Range
	Extension Mode.
	Emanuele Mandelli, Lester Kozlowski, AltaSens Inc, Westlake Village, CA, USA.
7.18	A Fully Depleted Backside Illuminated CMOS Imager with VGA Resolution	Slides
	and 15 micron Pixel Pitch
	Stefan Lauxtermann, Vikram Vangapally, Sensor Creations Inc. (SCI),
	Camarillo, CA, USA.
7.19	Linear High-Dynamic-Range Bouncing Pixel with Single Sample
	Pablo N. A. Belmonte^1,2, P.J. French^2, Davies W. De Lima Monteiro^1, Frank Sill Torres^1,
	^1Department of Electrical Engineering, DEE/PPGEE, Universidade Federal de
	Minas Gerais, Belo Horizonte, MG, Brazil; ^2Delft University of Technology,
	Electronic Instrumentation Laboratory, Delft, The Netherlands.
7.2	Jailbreak Imagers: Transforming a Single-Photon Image Sensor into a True
	Random Number Generator.
	Samuel Burri^1, Damien Stucki^2, Yuki Maruyama^3, Claudio Bruschini^1, Edoardo Charbon^3,
	Francesco Regazzoni^3, ^1EPFL, School of Engineering, Lausanne, Switzerland;
	^2ID Quantique, Switzerland; ^3Delft University of Technology, Delft, Netherlands.
7.21	Comparison of Two Cameras based on Single Photon Avalanche Diodes
	(SPADS) for Fluorescence Lifetime Imaging Application with Picosecond
	Resolution
	F. Powolny^1, S. Burri^1, C. Bruschini^1,2, X. Michalet^3, F. Regazzoni^4 , E. Charbon^1,4,
	^1Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland;
	^2Centre Hospitalier Universitaire Vaudois (CHUV), Lausanne, Switzerland;
	^3University of California, Los Angeles (UCLA), Los Angeles, USA;
	^4Delft University of Technology, Delft, The Netherlands.
7.22	Radiation-hard Active Pixel Detectors for Tracking of Charged Particles
	Based on HV-CMOS Technology
	F. Bompard,^1 S. Feigl,^2 M. Garcia-Sciveres,^3 L. Meng,^2D. Muenstermann,^4
	P. Pangaud,^1 I. Peric,^5 and A. Rozanov^1, 1CPPM, Aix-Marseille Universite, Marseille,
	France; ^2CERN, Geneve, Switzerland; ^3Lawrence Berkeley National Laboratory,
	Berkeley, CA, USA; ^4DPNC, Universite de Geneve, Geneve, Switzerland;
	^5Institute for Computer Science, University of Heidelberg, Mannheim, Germany.
7.23	Digital Calibration Algorithm for 2-Stage Cyclic ADC used in 33-Mpixel
	120-fps CMOS Image Sensor
	T. Watabe^1,4, K. Kitamura^2,4, T. Hayashida^2, T. Kosugi^3, H. Ohtake^2, H. Shimamoto^2,
	S. Kawahito^3,4, and N. Egami^2; ^1NHK Engineering System, Inc., Setagaya-ku, Tokyo,
	JAPAN ; ^2NHK Science and Technology Research Laboratories;
	^3Brookman Technology, Inc.; ^4Shizuoka University, Japan.
7.24	An Optical Punch-Through Diode and Gate Biasing 1-T Pixel for Binary
	Pixels in Fully Digital CMOS Image Sensors
	Hyung-june Yoon^1 and Edoardo Charbon^1,2; ^1EPFL, Lausanne, Switzerland;
	^2Delft University of Technology, Delft, Netherlands.
7.25	A 5.2Mpixel@250Fps 16Gbps CMOS Image Sensor with Embedded Digital
	Processor for Reconfigurability and on-chip Image Correction
	Francisco Jiménez-Garrido ^1, José Fernández-Pérez ^1, Cayetana Utrera ^1, José Ma Muñoz ^1,
	Ma. Dolores Pardo ^1, Rafael Domínguez-Castro ^1, Fernando Medeiro ^1 and Angel
	Rodríguez-Vázquez ^2,1; ^1Universidad de Sevilla, Instituto de Microelectrónica de
	Sevilla (IMSE-CNM), Sevilla, Spain; ^2Consejo Superior de Investigaciones Científicas
	(CSIC), Instituto de Microelectrónica de Sevilla (IMSE-CNM); ^3Innovaciones
	Microelectrónicas S.L. (ANAFOCUS); Sevilla (Spain).
7.26	Reconfigurable Focal-Plane Hardware for Block-Wise Intra-Frame HDR Imaging
	Jorge Fernandez-Berni, Ricardo Carmona-Galan, Angel Rodrıquez-Vazquez,
	Institute of Microelectronics of Seville (CSIC - Universidad de Sevilla) Seville, Spain.
12:00 - 13:30	Lunch
13:30 - 17:30	Social Event - Tram Ride to Hidden Peak (11,000 ft)
17:30 – 19:00	Poster viewing and reception
Saturday, June 15, 2013
7:00 - 8:30	Breakfast
Session 08	Invited Presentation, Array Imagers and Large Area Sensors
	Session co-chairs: Junichi Nakamura (Aptina Imaging),
	Shouleh Nikzad (JPL, California Institute of Technology)
8:45 – 9:05	Invited Presentation: Zooming in to Multi-Aperture Cameras
8.01	Gal Shabtay, Noy Cohen, David Mendlovic and Eran Kali, Corephotonics Ltd, Israel.
9:05-9:20	LASSENA: A 6.7 Megapixel, 3-sides Buttable Wafer-Scale CMOS Sensor
8.02	using a Novel Grid-Addressing architecture
	I Sedgwick, D Das, N Guerrini, B Marsh, R Turchetta, Science and Technology
	Facilities Council, Rutherford Appleton Laboratory, UK.
9.20 – 9.35	Requirements, Developments and Challenges for CCD and CMOS Image
8.03	Sensors for Space Applications
	P.Garé, N.Nelms, Y.Nowicki-Bringuier, D.Martin, R.Meynart, M.Zahir,
	European Space Agency, Noordwijk, The Netherlands.
9:35 – 9:50	Fabrication of Large Format, Fully Depleted CCDs for the Dark Energy	Revised
8.04	Survey Camera
	S.E. Holland^1, C.J. Bebek^1, K.S. Dawson^4, H.T. Diehl^3, F. Dion^2, J.H. Emes^1,
	J. Estrada^3, R. Frost^2, R. Groulx^2, A. Karcher^1, W.F. Kolbe^1, D. Kubik^3 ,
	N.P. Palaio^1, C.H. Tran^1, G. Wang^1, and N.A. Roe^1; ^1Lawrence Berkeley National
	Laboratory, Berkeley, CA, USA; ^2Teledyne DALSA Semiconductor, Bromont,
	Québec, Canada; ^3Fermi National Accelerator Laboratory, Batavia, IL, USA;
	^4University of Utah, Salt Lake City, UT, USA.
9:50 – 10:05	A 12MP 16-Focal Plane CMOS Image Sensor with 1.75mm Pixel:
8:05	Architecture and Implementation
	Kwang-Bo Cho^1, Nick Tu^1, John Brummer^1, Khandaker Azad^1, Leo Hsu^1, Vivian Wang^1,
	Dongsoo Kim^1, Krishna Palle^1, Tien-Min Miao^1, Yandong Chen^1, Canaan Hong^1,
	Toan Bao^1, Vitanshu Sharma^1, Yuan Fong^1, Kumudini Irkar^1, Syed Hashmi^1, Vinesh
	Sukumar^1, Salman Kabir^1, Gershon Rosenblum^1, Yong Gao^1, Kil-Ho Ahn^2, Hyuk-Jin Ko^2,
	Jeff Watson^3, Chris Kenoyer^3; ^1Aptina, LLC, San Jose, CA, USA; ^2Aptina Korea Co,
	Seoul, Korea; ^3Aptina, LLC, Corvallis, OR, USA.
10:05 – 10:30	Break
Session 09	Image Sensor Design
	Session chair: Alex Krymski (Alexima)
10:30 – 10:45	Application of Photon Statistics to the Quanta Image Sensor	Slides
9.01	Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA.
10:45 – 11:00	Early Research Progress on Quanta Image Sensors	Slides
9.02	Saleh Masoodian, Yue Song, Donald Hondongwa, Jiaju Ma, Kofi Odame
	and Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA.
11:00 – 11:15	Organic CMOS Image Sensor with Thin Panchromatic Organic Photoelectric
9.03	Conversion Layer: Durability and Performance
	Mikio Ihama^1, Hideyuki Koguchi^1, Hiroshi Inomata^1, Hideki Asano^1,Yuuki Imada^1,
	Yasuyoshi Mishima1, Yoshihisa Kato2, Yutaka Hirose2,Mizuki Segawa2,
	Tetsuya Ueda^2, Shinji Kishimura^2; ^1Frontier Core-Technology Laboratories,
	FUJIFILM Corporation, Kanagawa, Japan; ^2Industrial Devices Company,
	Panasonic Corporation1, Nagaokakyo City, Kyoto, Japan.
11:15 – 11:30	A 1-inch Optical Format, 80fps, 10.8Mpixel CMOS Image Sensor
9.04	Operating in a Pixel-to-ADC Pipelined Sequence Mode
	Isao Takayanagi, Norio Yoshimura, Toshiaki Sato, Shinichiro Matsuo, Tetsuji Kawaguchi,
	Kazuya Mori,Shinji Osawa, ^†Timothy Bales, ^††Ernesto S. Gattuso, ^††Douglas Fettig,
	^††Bob Gravelle, ^††Dan Pates,^††Scott Johnson, Junichi Nakamura,
	Aptina Japan, ^†Aptina UK, ^††Aptina Imaging.
11:30 – 11:45	A 4K2K 60-fps Image Sensor Based on Stagger-laced Dual-exposure Technique
9.05	Yusuke Okada, Takeo Azuma, Toshinobu Matsuno, Hiroyoshi Komobuchi (Panasonic
	Corporatio, Kyoto, Japan), Jan Craninckx, Bertrand Parvais, Kyriaki Minoglou,
	Koen De Munck, Luc Haspeslagh, Piet De Moor (IMEC, Heverlee, Belgium),
	Serge Biesemans (now at TEL Europe).
11:45 – 12:00	24 MPixel 36x24mm2 14 bit Image Sensor in 110/90 nm CMOS Technology
9.06	G. Meynants, J. Bogaerts, B. Wolfs, B .Ceulemans, T. DeRidder, A. Gvozdenović,
	E. Gillisjans, X. Salmon, G. VandeVelde, CMOSIS nv, Antwerp,Belgium.
12:00 – 12:15	A 1.1e-rms Temporal Noise 87.5dB DR CMOS Image Sensors With Low-Noise
9.07	Transistors and Column-Parallel ADCs
	Min-Woong Seo^1, Takehide Sawamoto^2, Tomoyuki Akahori^2, Zheng Liu^2, Keita Yasutomi^1,
	Keiichiro Kagawa^1, and Shoji Kawahito^1,2; ^1Research Institute of Electronics, Shizuoka
	University, Johoku, Hamamatsu, Japan; ^2Brookman Technology, Inc, Hamamatsu, Japan.
12:15 – 13:45	Lunch
Session 10	Depth Sensing, TOF, and Time Resolving Imaging.
	Session co-chairs: David Stoppa (Fondazione Bruno Kessler),
	Edoardo Charbon (Delft University of Technology)
13:45 – 14:00	A CMOS Image Sensor for In-Pixel Background Suppression and Frequency
10.01	and Phase Detection for Structured Light 3-D Acquisition Systems
	Hiroki Yabe (Department of Electrical Engineering and Information Systems, The
	University of Tokyo, Tokyo, Japan) and Makoto Ikeda (VLSI Design and Education
	Center (VDEC), The University of Tokyo, Tokyo, Japan).
14:00 – 14:15	Compact Ambient Light Cancellation Design and Optimization for 3D
10.02	Time-of-Flight Image Sensors
	Yibing M. Wang^1, Ilia Ovsiannikov^1, Sung-Jae Byun^2, Tae-Yon Lee^2, Yongjei Lee^3,
	Grzegorz Waligorski^1, Hongyu Wang^1, Seunghoon Lee^2, Dong-Ki Min^2, Yoondong Park^2 ,
	Tae-Chan Kim^2, Chi-Young Choi^2, Gabsoo Han^2, and Eric R. Fossum^1,2 ;
	^1Samsung Semiconductor, Inc., Pasadena, CA, USA;
	^2Samsung Electronics Co. Ltd., Image Development Team, Giheung, South Korea;
	^3Kunsan National University, Dept. of Physics, Jeonbuk, South Korea.
14:15 – 14:30	3dim: Compact and Low Power Time-of-Flight Sensor for 3D Capture Using
10.03	Parametric Signal Processing
	Andrea Colaco^1;2, Ahmed Kirmani^1, Nan-Wei Gong^1;2,Tim McGarry^3, Laurence Watkins^3,
	and Vivek K Goyal^1, ^1Massachusetts Institute of Technology; ^23dim Tech, Inc.;
	^3Princeton Optronics.
14:30 – 14:45	CMOS Image Sensor for 3-D Range Map Acquisition With Pixel-Parallel
10.04	Correlation In Region of Interest
	Takahiko Matsushima^1 and Makoto Ikeda^2; ^1Department of Electrical Engineering
	and Information Systems, The University of Tokyo; ^2VLSI Design and Education Center
	(VDEC), The University of Tokyo, Tokyo, Japan.
14:45 – 15:00	A Time-of-Flight Image Sensor with Sub-mm Resolution Using Draining Only
10.05	Modulation Pixels
	Keita Yasutomi, Takahiro Usui, Sang-Man Han, Masatoshi Kodama,Taishi Takasawa,
	Keiichiro Kagawa, Shoji Kawahito; Shizuoka University, Hamamatsu, Japan.
15:00 – 15:15	CMOS Lock-in Pixel Image Sensors with Lateral Electric Field Control for
10.06	Time-Resolved Imaging
	Shoji Kawahito, Guseul Baek, Zhuo Li, Sang-Man Han, Min-Woong Seo,
	Keita Yasutomi and Keiichiro Kagawa; Research Institute of Electronics,
	Shizuoka University, Hamamatsu, Japan.
15:15 – 15:40	Break
Session 11	Invited Presentation and High Speed.
	Session chair: Shoji Kawahito (Shizuoka University)
15:40 – 15:55	CMOS Image Sensor Pixel with 2D CCD Memory Bank for Ultra High Speed
11.01	Imaging with Large Pixel Count
	A. Lahav^#, J. Crooks^*, B. Marsh^*, R. Turchetta ^*, and A. Fenigstein^#,
	^#TowerJazz Semiconductor Ltd, Migdal Haemek, Israel;
	^*STFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK.
15:55 – 16:10	Ultra‐High Speed Imaging At Megaframes per Second with A Megapixel	Revised
11.02	CMOS Image Sensor	Slides
	J. Crooks^a, B. Marsh^a, R. Turchetta^a, K. Taylor^b, W. Chan^b, A. Lahav^c, A. Fenigstein^c,
	^aSTFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK;
	^bSpecialised Imaging, Tring, Hertfordshire, UK;
	^cTowerJazz Semiconductor Ltd, Migdal Haemek, Israel.
16:10 – 16:25	High Speed, Backside Illuminated 1024x1 Line Imager with Charge Domain	Slides
11.03	frame store in Espros Photonic CMOS Technology
	Martin Popp, Beat De Coi, Dieter Huber, Pascal Ferrat, Markus Ledergerber,
	Espros Photonics AG, Sargans, Switzerland.
16:25 – 16:40	Toward one Giga frames per second: Multi-Collection-Gate BSI Image Sensors
11.04	Takeharu G. Etoh^1, Son V. T. Dao^1, Tetsuo Yamada^2 and Edoardo Charbon^3,
	^1Ritsumeikan University, Kusatsu, Japan; ^2Tokyo Polytechnic University, Atsugi,
	Japan; ^3Technische Universiteit Delft, Delft, the Netherlands.
16:40 – 16:55	A 5 Megapixel, 1000fps CMOS Image Sensor with High Dynamic Range	Revised
11.05	and 14-bit A/D Converters	Slides
	Bart Cremers, Manuel Innocent, Carl Luypaert, John Compiet, Ishwar Chandra
	Mudegowdar, Cedric Esquenet, Genis, Chapinal, Wiet Vroom, Tim Blanchaert,
	Thomas Cools, Joost Decupere, Roel Aerts, Peter Deruytere, Tomas Geurts;
	ON Semiconductor, Mechelen, Belgium.
16:55 – 17:15	Keynote Presentation: Many Pixels Make Light Work	Slides
11.06	Mike Tompsett
18:30 – 20:30	Dinner and 2013 IISS Awards
	Best Poster Award
	Song Chen, et al.,
	Digital Integration Sensor
	Walter Kosonocky Award
	K. Kitamura, et al.
	A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters
	Exceptional Service Award to
	Albert JP Theuwissen
	"For exceptional contributions to the education of image sensor specialists"
	Exceptional Lifetime Achievement Award to
	Gene Weckler
	"For exceptional contributions to the field of solid-state image sensors"
Sunday, June 16, 2013
7:00 - 8:30	Breakfast
Session 12	Global Shutter
	Session chair: Albert Theuwissen (Harvest Imaging)
8:30 – 8:45	Low Noise High Efficiency 3.75μm and 2.8μm Global Shutter CMOS	Slides
12.01	Pixel Arrays
	Sergey Velichko^1, Gennadiy Agranov^2, Jaroslav Hynecek^2, Scott Johnson^1, Hirofumi
	Komori^2, Jenny Bai^2, Igor Karasev^2, Rick Mauritzson^1, Xianmin Yi^2, Victor Lenchenkov^2,
	Sarah Zhao^2, Hyuntae Kim^1;^1Aptina, Meridian, ID, USA, ^2Aptina, San Jose, CA, USA.
8:45 – 9:00	IR Enhanced Global Shutter Pixel for High Speed Applications
12.02	Assaf Lahav^1, Adi Birman^1, Dima Veinger^1, Amos Fenigstein^1, Dexue Zhang^2,
	Daniel Van Blerkom^2; ^1TowerJazz Semiconductor Ltd, Migdal Haemek, Israel;
	^2Forza Silicon Corp., CA, USA.
9:00 – 9:15	3.5 μm Global Shutter Pixel With Transistor Sharing And Correlated
12.03	Double Sampling
	B. Wolfs, J. Bogaerts, G. Meynants; CMOSIS nv, Antwerpen, Belgium.
9:15 – 9:30	Global Shutter Pixel with Floating Storage Gate
12.04	Alex Krymski, Luxima Technology LLC/ Alexima, Pasadena, CA, USA.
9:30 – 9:45	High Frame-Rate Global Shutter Image Sensor with Dual-Reset Branch
12.05	SAR ADC Architecture
	Daniel Van Blerkom, Jeff Rysinski, Yingying Wang, Kevin Stevulak, Christophe Basset,
	Loc Truong, Rami Yassine, Guang Yang, Chao Sun, Kai Ling Ong, Steve Huang,
	Forza Silicon Corporation, Pasadena, CA, USA.
9:45 – 10:00	A 4e-Noise 2/3-inch Global Shutter 1920x1080p120 CMOS-Imager
12.06	Peter Centen^1, Steffen Lehr^2 , Sabine Roth^2, Jeroen Rotte^1, Friedrich Heizmann^2,
	Akbar Momin^2 ,Ralf Dohmen^2, Karl-Heinz Schaaf^2, Klaas Jan Damstra^1 , Ruud van Ree^1,
	Michael Schreiber^2;^1 Grass Valley, Breda, The Netherlands.
	.^2Viimagic; Villingen, Germany.
10:00 – 10:25	Break
Session 13	Invited Presentation, Oversampling, and High Dynamic Range
	Session co-chairs: Shigetoshi Sugawa (Tohoku University),
	Vladimir Koifman (Analog Value)
10:25 – 10:45	Invited Presentation: Image Quality of Oversampling Cameras
13.01	Juha Alakarhu, Samu Koskinen, Eero Tuulos, Nokia Corporation, Camera
	Technologies, Tempere, Finland.
10:45 – 11:00	Overcoming the Full Well Capacity Limit: High Dynamic Range Imaging	Slides
13.02	Using Multi-Bit Temporal Oversampling and Conditional Reset
	Thomas Vogelsang, Michael Guidash, Song Xue, Rambus Inc, Sunnyvale, CA, USA.
11:00 – 11:15	A Comparison of High Dynamic Range CIS Technologies for Automotive
13.03	Applications
	Johannes Solhusvik, Jiangtao Kuang, Zhiqiang Lin, Sohei Manabe, Jeong-Ho Lyu,
	Howard Rhodes, OmniVision Technologies.
11:15 – 11:30	An Overflow Photo-Gate Pixel Enables High FWC and Improved Proton
13.04	Radiation Tolerance in CMOS Pixels
	Yannick De Wit & Manuel Innocent, ON-Semiconductor, Mechelen, Belgium.
11:30 – 11:45	A CMOS HDR Imager with an Analog Local Adaptation
13.05	Gilles Sicard^1, Hassan Abbas^1, Hawraa Amhaz^1 ^,*, Hakim Zimouche^1,**,
	Robin Rolland^2, David Alleysson^3; ^1CNRS, G-INP, UJF, TIMA Laboratory,
	Grenoble, France; ^2CIME-Nanotech, Grenoble, France; ^3CNRS, UPMF, LPNC
	Laboratory, Grenoble, France; ^*Now with CEA LETI, ^**Now with LIRMM
	Laboratory, Montpellier, France.
11:45 - 12:00	Wrap Up and Closing
	Boyd Fowler, Co-Chair
12:00 - 13:30	Lunch
	Fin