Introductory paper:
The State-of-the-Art of Mainstream CMOS Image Sensors
Ray Fontaine
Competitive Technical Intelligence Group, Chipworks, Inc., Canada
Session 01 Image Sensors for Digital Photography
Session Chair: Eric Stevens
Back-side illuminated 28M-pixel APS-C sensor with high performance
Sungsoo
Choi, Seung Hyun Lim, Moosup
Lim, Hyung Jin Bae, Kyo Jin Choo, Jung Hoon Park, Kang Sun Lee, Seung Sik Kim, Jungho Moon, Kyungmok Son, Eun Sub Shim, Hankook Cho, Yitae Kim, Seog Heon Ham, JungChak Ahn, Chang Rok Moon and Duckhyung Lee
Samsung Electronics,
System LSI Division , Gyeonggi-city,
Gyeonggi-do, Korea
M.Kobayashi, M.Johnson, Y.Wada, H.Tsuboi, J.Iwata, T.Ono, H.Takada, K.Togo, Y.Arishima, T.Kishi, A.Okita, H.Takahashi, T.Ichikawa
Canon Inc., Japan
A 4M pixel
full-PDAF CMOS image sensor with 1.58μm 2X1 On-Chip Micro-Split-Lens
technology
Sozo Yokogawa1, Isao Hirota1, Isao Ohdaira1, Masao Matsumura1, Atsushi Morimitsu1, Hiroaki Takahashi1 Toshio Yamazaki2, Hideki Oyaizu2,Yalcin Incesu3, Muhammad Atif3, Yoshikazu Nitta1
1 Sony Corporation, Atsugi, Kanagawa, Japan
2 Sony Corporation, Osaki, Shinagawa-ku, Tokyo,
Japan
3 Sony Deutschland GmbH, Stuttgart, Germany
Recent
developments on large-area CCDs for professional applications
Jan Bosiers, Erik-Jan Manoury, Wilco Klaassens, Holger
Stoldt, René Leenen, Harry van Kuijk,
Herman Peek, Walter de Laat
Teledyne DALSA Professional Imaging
High-Tech Campus 27, 5656AE Eindhoven, The Netherlands
Session 02 Stacked
Image Sensors
Session Chair : Vladimir Koifman
Stack
Chip Technology: A New Direction for CMOS Imagers
V.C. Venezia, H. Rhodes, C.
Shih, W.Z. Yang, and B. Zhang
OmniVision Technologies, Santa Clara, USA
A 3D stacked CMOS image sensor
with 16Mpixel global-shutter mode using 4 million interconnections
Toru Kondo, Yoshiaki Takemoto, Kenji Kobayashi, Mitsuhiro Tsukimura, Naohiro Takazawa, Hideki Kato, Shunsuke
Suzuki, Jun Aoki, Haruhisa Saito, Yuichi Gomi, Seisuke Matsuda and
Yoshitaka Tadaki
Olympus Corporation
Japan
A 1/1.7-inch 20Mpixel Back-illuminated Stacked CMOS Image Sensor with
parallel multiple sampling
Hayato Wakabayashi1, Atsushi Suzuki1,Nobutaka Shimamura1,Toshiki Kainuma1,
Kensuke Koiso3, Atsushi Masagaki1, Yoichi Yagasaki1,
Shigeru Gonoi2, Masatoshi Mizuno2, Tatsuya Sugioka1,Takafumi
Morikawa1, Yoshiaki Inada1
1Sony, Atsugi, Japan, 2Sony LSI Design, Atsugi, Japan, 3Sony
Semiconductor, Kumamoto, Japan
Masahide Goto1, Kei Hagiwara1, Yoshinori Iguchi1,
Hiroshi Ohtake1, Takuya Saraya2,Masaharu
Kobayashi2, Eiji Higurashi2,
Hiroshi Toshiyoshi2,Toshiro Hiramoto2
1 NHK Science and Technology Research Laboratories, Tokyo, Japan,
2 The University of Tokyo, Tokyo, Japan
Session 03 Imaging Devices, Characterization and Modeling
Session Chair: Vyshnavi Suntharalingam
Detection and Shielding of
Photon Emission in Stacked CIS
Calvin Chao, Chin-Hao Chang, Manoj Mhala, Hon-Yih Tu,Shang-Fu
Yeh,Kuo-Yu Chou, Po-Sheng Chou, Charles Liu, and
Fu-Lung Hsueh
Taiwan Semiconductor Manufacturing Company, Hsinchu,
Taiwan
The source decomposition of Dark FPN and its improvement by Stacked CIS
process
Y. Yamashita, W.H. Wu, W.J. Chiang, C.H.
Chung, R.J. Lin, J.J. Sze, J.C. Liu, C.H. Tseng, H. Sumiand
S.G. Wuu
Taiwan Semiconductor
Manufacturing Company, Ltd., Hsinchu, Taiwan
Interface State Generation by Substrate Injection Through
the Transfer Gate
Chris Hong1, Rick Jerome1, David
Price1, Verne Hornback1, Kyle Thomas2, Rusty
Winzenread2
1 ON Semiconductor, Gresham,
OR, USA
2 ON Semiconductor, Santa
Clara, CA, USA
Absolute Pinning Voltage
Measurement: Comparison between In-pixel and JFET Extraction Methods
A.
Pelamatti1, V. Goiffon1, A. De Ipanema1,
P. Magnan1, C. Virmontois2 O. Saint-Pe3, M. Breart de Boisanger3
1 ISAE Toulouse 2CNES, Toulouse, 3Airbus
Defence and Space, Toulouse, France
Fully Depleted SOI Pixel Photo Detectors with
Backgate Surface Potential Pinning
Hiroki Kamehama1,
Shoji Kawahito1, Sumeet Shrestha1,
Keita Yasutomi1, Keiichiro Kagawa1,Aayaki
Takeda2,Takeshi Go Tsuru2,and Yasuo
Arai3
1Research Institute of Electronics, Shizuoka
University, Hamamatsu, Japan
2Department of Physics, Kyoto University,
Sakyo, Japan
3National High Energy Accelerator Research
Organization, Ibaraki Japan
Session 04 Spectral Imaging and Microlenses
Session Chair: Yitae
Kim
Two Layer Image Sensor Pixel Concept for Enhanced Low Light Color Imaging
Leo Anzagira, Eric R. Fossum
Thayer Engineering School, Dartmouth College, Hanover,
NH, USA
New
Color Filter Patterns and Demosaic for Sub-micron
Pixel Arrays
Biay-Cheng Hseih1, Hasib
Siddiqui1, Jiafu Luo1,
Todor Gerogiev1, Kalin
Atanassov1, Sergio Goma1, and HY Cheng2, JJ
Sze2, RJ Lin2, HY Chou2, Calvin Chao 2,
SG Wuu2
1Qualcomm Inc., San Diego,CA,USA, 2TSMC,Hsinchu,
Taiwan
A 80% QE High Readout Speed 1024 Pixel
Linear Photodiode Array for UV-VIS-NIR Spectroscopy
Rihito Kuroda1, Takahiro Akutsu1, Yasumasa
Koda1, Kenji Takubo2, Hideki Tominaga2
Ryuuta Hirose2, Tomohiro Karasawa2 and Shigetoshi Sugawa1
1Graduate School of Engineering, Tohoku University, Japan
2Shimadzu Corporation Sendai, Miyagi, Japan
Pixel
performance enhancement by integrated diffractive optics
V. Rochus, Xavier Rottenberg, Ingrid
De Wolf, Philippe Soussan, and Piet De Moor
Imec, Leuven, Belgium
Session 05 Poster Flash Presentations (Group 1)
Session Chair: Gennadiy Agranov
On Chip Optics Solution on Small Pixel CIS S/N Ratio Improvement
Chih-Ching Chang, Wu-Cheng Kuo , Ken_Wu
, Yu-Kun Hsiao, JC_Hsieh.
VisEra Technologies Company, Hsinchu Science Park, Taiwan
Color
Filter Array Patterns Designed to Mitigate Crosstalk Effects in Small Pixel
Image Sensors
Leo Anzagira and Eric R. Fossum,
Thayer Engineering School, Dartmouth College, Hanover, NH , USA
Read Noise Distribution Measurement and Modeling of CMOS Image Sensors
Boyd Fowler, Clemenz Portmann,
Lele Wang and Steve Tran
Google Inc., Mountain View CA 94043 USA
Twinkling Behavior in Ultra-High-Resolution CMOS Global Shutter Pixels
Tsung-Hsun Tsai, David Marchesan,
Naser Faramarzpour,
Matthias Sonder, Eric Fox
Teledyne DALSA Inc., Waterloo, ON, Canada
Electrical Characterization Method for Two Stage Transfer Global Shutter
Pixels
Manuel Innocent
ON Semiconductor, Mechelen, Belgium.
Harald Neubauer, Thomas Schweiger
Fraunhofer Institute for Integrated Circuits (IIS), Erlangen, Germany
Lens-free holographic imaging of
microscopic objects using photonic structures and CMOS imagers
Murali Jayapala, Richard Stahl, Geert Vanmeerbeeck, Andy Lambrechts
IMEC, Leuven, Belgium
Design and Optimisation of
Large 4T Pixel
Xuezhou Cao1, Daniel Gäbler2, Chris Lee1, Tee
Pei Ling3, Devorah Anak
Jarau3, David Kho Ching Tien3, Teo Boon Chuan3, Brendan Bold1
1,2X-FAB Semiconductor Foundries AG,1Branch
Office Plymouth, Plymouth, UK, 2Erfurt, Germany
3X-FAB Sarawak Sdn.
Bhd., Sarawak, Malaysia
Investigating
Transfer Gate Potential Barrier by Feed-Forward Effect Measurement
Yang Xu1, Xiaoliang
Ge1 Albert J.P. Theuwissen1,2
1Delft University of Technology, Delft, the Netherlands
2Harvest Imaging, Bree, Belgium
Fumiaki Kusuhara, Shunichi Wakashima,
Satoshi Nasuno, Rihito
Kuroda and Shigetoshi Sugawa
Graduate School of Engineering, Tohoku
University, Japan
A 30 fps 1920 x 1080 pixel
Electron Multiplying CCD Image Sensor with Per-Pixel Switchable Gain
C. Parks, S. Kosman, E. Nelson, N. Roberts,
and S. Yaniga
ON Semiconductor ,
Rochester, USA
Superlattice-doped detectors for UV through gamma-ray imaging and spectroscopy
M. E. Hoenk1 , J. Hennessy1
, A. D. Jewell1 , A. G. Carver1 , T. J. Jones1
, S. Nikzad1, M. McClish2 ,S. Tsur3 , G.
Meynants4, J. Sgro5
1 Jet Propulsion Laboratory,
California Institute of Technology, Pasadena, CA, USA
2 Radiation Monitoring Devices,
Inc., 44 Hunt Street, Watertown, MA, USA
3 Applied Materials Inc., 9
Oppenheimer St., Rehovot, Israel
4 CMOSIS ,
Antwerp, Belgium 5 Alacron, Inc.,
Nashua, NH , USA
Masatoshi Kimura1, Tadashi Yamaguchi2 and Takashi
Kuroi1
1Technology Division, Renesas Semiconductor
Manufacturing Corp., Japan
2Production Technology Development Unit, Renesas Electronics Corp., Japan
Sung-Han Tsai, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Li, Hsin-Chi Chen,
Yung-Lung Hsu
Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan
Active Pixel Concepts for
High-Resolution Large Area Imagers
Florian De Roose1,2, Soeren Steudely2, Pawel
E. Malinowskiy2, Kris Myny2, Adi
Xhakoni1,Georges Gielen1,2, Jan Genoey1,2, Wim Dehaene1,2
1Department of Electrical Engineering (ESAT), KU Leuven, Belgium
2Large Area Electronics Department, IMEC,
Belgium
High-density 3D interconnects
Technology: The key for burst-mode very high speed imaging?
Philippe
Martin-Gonthier, Fernando Raymundo, Pierre Magnan
ISAE, Toulouse, France
CMOS
image sensor with pseudorandom pixel placement for jaggy reduction in line
representation
Chihiro Izaki, Junichi Akita
Kanazawa University, Kanazawa, Japan
Chih-Hao Lin, Chih-Cheng Hsieh
Department of Electrical Engineering, National
Tsing Hua University, Hsinchu, Taiwan
Imaging sparse events at high
speed
Gaozhan Cai, Bart Dierickx, Bert Luyssaert, Nick Witvrouwen, Gerlinde Ruttens
Caeleste CVBA, Mechelen, Belgium
Tuesday,
June 9th
2015
Session 06 High speed, Gated and Time-Of-Flight Imaging
Session Chair: Guy
Meynants
Notes about the limits of ultra-high speed solid-state
imagers
R. Turchetta
Rutherford Appleton Laboratory, Science and
Technology Facilities Council (STFC), Harwell Science and Innovation Campus,
U.K
Toward 10 Gfps: Factors Limiting the Frame
Rate of the BSI MCG Image Sensor
V. T. S. Dao1,6, T. G. Etoh1, K. Shimonomura1,
Q. Nguyen1, N. Hayashi2, Y. Kamakura3, C.
Zhang4, E. Charbon4, P. Goetschalckx5, Luc
Haspeslagh5, and P. De Moor5
1Ritsumeikan University Kusatsu
Japan, 2Astrodesign Inc., 3Osaka University, 4Technical
University Delft, 5IMEC, 6Research Institute for Science
and Technology, Ritsumeikan University, Kusatsu JAPAN
A
20Mfps Global Shutter CMOS Image Sensor with Improved Sensitivity and Power
Consumption
Shigetoshi Sugawa,
Rihito Kuroda, Tohru
Takeda, Fan Shao, Ken Miyauchi and Yasuhisa Tochigi
Graduate School of Engineering,
Tohoku University, Japan
Oversampled
ITOF Imaging Techniques using SPAD-based Quanta Image Sensors
Neale A.W. Dutton1,2, Luca Parmesan1,2, Salvatore
Gnecchi1,2, Istvan Gyongy2,
Neil Calder2, Bruce R. Rae1, Lindsay A. Grant1,
Robert K. Henderson2
1STMicroelectronics, Imaging Division, Edinburgh, UK
2The University of Edinburgh, Edinburgh, UK
A High QE, Fast Shuttered CMOS Image Sensor with a
Vertical Overflow Drain Shutter Mechanism
Erez Tadmor1,3 , Assaf
Lahav2, Alex Fish3, Giora Yahav1,
David Cohen1
1Advanced Imaging Technologies Group, Microsoft R&D Center, Haifa,
Israel
2Tower-Jazz Semiconductor Ltd. Migdal Haemek, Israel
3Faculty of Engineering, Bar-Ilan University, Ramat Gan,
Israel
A multi-aperture compressive time-of-flight CMOS imager for pixelwise coarse histogram acquisition
Futa Mochizuki1, Keiichiro Kagawa1,
Min-Woong Seo1, Taishi
Takasawa1,Keita Yasutomi1, and
Shoji Kawahito1
1Research Institute of Electronics, Shizuoka
University, Hamamatsu, Japan
Keynote
presentation:
History of the creation of MOS vision sensor arrays and associated
topics
And what does – or should - the future
hold?
Peter JW Noble
2015 IISS Pioneering Achievement Award
recipient.
Session 07 Poster Flash Presentations (Group 2)
Session Chair: Shoji
Kawahito
Designing pixel parallel localized drivers of a 3D 1Gfps image sensor
family
C. Zhang1
V. T. S. Dao2, T. G. Etoh2, K. Shimonomura2,
E. Charbon1
1Delft University of Technology, the Netherlands;
2Ritsumeikan University, Japan
A 25 Mpixel, 80fps, CMOS Imager with an
In-Pixel-CDS Global Shutter Pixel
Tomas Geurts, Thomas Cools, Cedric Esquenet, Rahul Sankhe, Anilkumar Prathipati, Mukesh Rao Engla Syam, Aniruddha Bangalore Dayalu, V. Penchala Reddy Gaddam
ON Semiconductor, Belgium
A 14-bit, 33-Mpixel, 120-fps Image Sensor with DMOS Capacitors in
90-nm/65-nm CMOS
T. Yasue1, K. Kitamura1, T. Watabe2, H.
Shimamoto1, T. Kosugi3, T. Watanabe3,S. Aoyama3, M.Monoi4, Z. Wei5
and S. Kawahito5
1NHK Science and Technical Research Laboratories,
Tokyo, JAPAN, 2NHK Engineering System Inc., Japan, 3Brookman
Technology, Inc., Japan, 4Toshiba Corporation Semiconductor & Storage
Products Company, Japan, 5Shizuoka University, Japan
Piece-Wise-Linear Ramp ADC for
CMOS Image Sensor and Calibration Techniques
C. Pastorelli1,2,3, P. Mellot1, S. Mir2,3,
C. Tubert1
1STMicroelectronics, Grenoble, France 2Université
Grenoble Alpes, TIMA, Grenoble, France 3CNRS,
TIMA, Grenoble, France
Ha Le-Thai1, Adi
Xhakoni1, Genis Chapinal2,
Manuel Innocent2, Tomas Geurts2, Georges Gielen1
1KU Leuven, ESAT-MICAS, Heverleen,
Belgium
2ON Semiconductor, Mechelen, Belgium
Canaan Sungkuk Hong, Krishna Palle, Toan Bao,
Vivian Wang, Yuan Fong, Woonil Choi, Kwang-Bo Cho, Roger Panicacci
ON
Semiconductor, San Jose, California, USA
Toshihisa Watabe1, Kazuya Kitamura2,
Tomohiko Kosugi4, Hiroshi Ohtake2,
Hiroshi Shimamoto2, and Shoji Kawahito3,4
1NHK Engineering System, Inc., Tokyo, Japan, 2NHK
Science & Technology Research Laboratories, Tokyo, Japan , 3Research
Institute of Electronics, Shizuoka University, Hamamatsu, Japan 4Brookman Technology Inc.,
Hamamatsu, Japan
Backside illuminated 84 dB global shutter image sensor
G. Meynants, G. Beeckman, K. Van Wichelen, T. De
Ridder, M. Koch, G.Schippers, M. Bonnifait,
W. Diels, J. Bogaerts
CMOSIS nv, Antwerp,
Belgium
A Global Shutter sensor used in Active Gated Imaging for automotive
Assaf Lahav1, Adi Birman1,
Denis Perhest1, Amos Fenigstein1, Yoav
Grauer2, Eyal Levi2
1TowerJazz, Migdal Haemek , Israel
2BrightWay Vision TM LTD, Haifa, Israel
A Smart CMOS Sensor for Optical Touch Screen Applications
Yang NI, Yiming Zhu, Bogdan Arion
New
Imaging Technologies SA, Verrières le Buisson France
PTC Inspired Column Level Compression in Low Power
CMOS Imagers
B. Bhuvan, M. Sarkar and S. Chatterjee
Department of Electrical Engineering, Indian Institute
of Technology Delhi, New Delhi, India
Linear Mode High Dynamic Range
Bouncing Pixel with Single transistor
Carlos A. de Moraes Cruz1, Pablo N. A. Belmonte2,
Davies W. de Lima Monteiro2
1Department of Electronics and Computation, Universidade Federal do Amazonas, Manaus, Brazil. 2Department of Electrical Engineering, Universidade Federal de Minas Gerais,
Belo Horizonte, Brazil.
Four Concepts for Synchronous,
PSN limited, true CDS, HDR imaging
A.K.Kalgi, B.Dierickx, B.Dupont, P.Coppejans, P.Gao, B.Spinnewyn, B.Luyssaert, A. Defernez, J. Zhu,
J.Basteleus, Q. Yao, W. Verbruggen,
D. Uwaerts, B. Uwaerts, G.
Ruttens, G. Cai
Caeleste CVBA, Mechelen, Belgium
Spatiotemporally Varying
Exposure Imaging for High Quality Image Reconstruction
Hidenori Tabata, Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto
Tokyo
University of Science, Tokyo , Japan
A single-exposure linear HDR 17-bit hybrid 50μm analogue-digital pixel in 90nm BSI
Jeffrey M. Raynor1, Andrew Scott1,2,
Christopher Holyoake1,3, Donald S. Reay2
1STMicroelectronics, Imaging Division, 33 Pinkhill,
Edinburgh, UK
2School of Engineering & Physical Sciences, Heriot-Watt University,
Edinburgh, UK
3School of Engineering & Electronics, The
University of Edinburgh, Edinburgh, UK
Time-resolved imaging device with high-speed modulators for fluorescence
lifetime measurement system
Min-Woong Seo,
Keiichiro Kagawa, Keita Yasutomi, Nobukazu
Teranishi,and Shoji Kawahito
Research Institute of Electronics, Shizuoka
University, Hamamatsu,
Japan
L.Gasparini1, N.Massari1, M.Perenzoni1,
L.Pancheri2, D.Stoppa1
1Fondazione Bruno Kessler, Trento, Italy , 2University
of Trento,Trento, Italy
A 15um CAPD Time-of-Flight pixel with 80% modulation contrast at 100MHz
Daniel Van Nieuwenhove,Kyriaki Fotopoulou, Camilo
Ernesto Medina López, Ward van der Tempel
SoftKinetic, Brussels, Belgium
Optimization of pulse-modulation
based ToF imaging systems
Andreas Süss1,2, Yenn
Leng Tanz3, Maarten Rosmeulen2,
Bedrich J. Hosticka1,3
1Fraunhofer IMS, Duisburg, Germany 2IMEC, Leuven, Belgium, 3University
Duisburg-Essen, Germany
Wednesday,
June 10th
2015
Session 8 Non Visible Imaging
Session Chair: Inge Peters
Invited presentation: Infrared Imagers State-Of-Art
E. Mazaleirat
Sofradir, France
Silicon and III-N UV Photon Counting Detectors
Shouleh Nikzad, John J.
Hennessy, Michael E. Hoenk, April D. Jewel, Alex G.
Carver, Timothy M. Goodsall, Todd J. Jones, Erika
Hamden, and L.Douglas Bell
Jet Propulsion Laboratory, California
Institute of Technology, Pasadena, CA, USA
Flexible X-ray detector with high sensitivity using
low cost, solution-processed organic photodiodes
Abhishek Kumar1, Date Moet1,
Jan-Laurens van der Steen1, Albert van Breemen1, Santosh
Shanmugam1, Arjan Langen1, ,Jan
Gilot1, Pim Groen1, Ronn Andriessen1, Matthias Simon2,
Walter Ruetten2, Alexander Douglas2, Rob Raaijmakers3,
Pawel E. Malinowski4, Kris Myny4
and Gerwin H.Gelinck5
1Holst Centre/TNO, Eindhoven, The Netherlands, 2
Philips Research, Eindhoven, The Netherlands, 3 Philips Healthcare,
PC Best, The Netherlands, 4IMEC, Department of Large Area
Electronics, Leuven, Belgium, 5Applied Physics Department, TU
Eindhoven, The Netherlands
Lucio Pancheri 1,2,
Mohamed El Amine Benkechkache1, Roberto Mendicino1,2, Hesong Xu1,2, Gian-Franco
Dalla Betta1,2, Giovanni Verzellesi3,2,
Daniele Comotti4,5, Lodovico Ratti4,5,
Marco Grassi4,5, Luca Lodola4,5, Piero
Malcovati4,5, Carla Vacchi4,5, Lorenzo Fabris4,5,
Massimo Manghisoni6,5, Valerio Re6,5, Gianluca
Traversi6,5, Giovanni Batignani7,8, Stefano Bettarini7,8,
Giulia Casarosa7,8, Francesco Forti7,8, Antonio Paladino7,8,
Eugenio Paoloni7,8, Giuliana Rizzo7,8, Fabio Morsani8
1Dip. di Ingegneria Industriale (DII), Università di
Trento, Italy. 2TIFPA-INFN, Trento, Italy.
3DISMI, Università di
Modena e Reggio, Italy. 4Dipartimento di Ingegneria Industriale e dell’Informazione, Università
di Pavia, Italy. 5INFN Sezione di
Pavia, Pavia, Italy.
6Dip. di Ingegneria e
Scienze Applicate, Università
di Bergamo, Dalmine (BG) Italy.
7Dip. di Fisica, Università di Pisa, Pisa,
Italy. 8INFN Sezione
di Pisa, Pisa, Italy.
G. Aglieri1, C.
Cavicchioli1, N. Chanlek3, A. Collu4, C. Gao11, H. Hillemanns1, A. Junique1, M. Kofarago1,5, M. Keil1, T. Kugathasan1, D. Kim6, J. Kim7, A. Lattuca8, C. A. Marin
Tobon1, D. Marras4, M. Mager1, P. Martinengo1, G. Mazza8, H. Mugnier2, L. Musa1, C. Puggionid, J. Rousset2, F. Reidt1,9, P. Riedler1, W. Snoeys1, S. Siddhanta4, G. Usai4, J. W. van
Hoorne1,10, P. Yang11, J. Yi7
1CERN, 1210 Geneva 23,
Switzerland 2MIND, Archamps, France 3Suranaree,
University of Technology, Nakhon Ratchasima,
Thailand 4University of
Cagliari and INFN, Cagliari, Italy 5University
of Utrecht, Utrecht, Netherlands 6Dongguk
and Yonsei University, Seoul, Korea 7Pusan National University,
Busan, Korea 8University of
Torino and INFN, Torino, Italy
9Ruprecht--‐Karls--‐Universitat Heidelberg, Heidelberg, Germany 10Technische Universitat
Wien, Vienna, Austria 11Central
China Normal University, Wuhan, China
Session 09 Innovative Photon Counting
Session Chair: David Stoppa
Bit-plane Processing Techniques
for Low-Light, High Speed Imaging with a SPAD-based QIS
Istvan Gyongy1, Neale Dutton2, Luca Parmesan1,
Amy Davies3, Rebecca Saleeb3, Rory Duncan3,
Colin Rickman3, Paul Dalgarno3, Robert K. Henderson1
1The University of Edinburgh, Edinburgh, U.K.
2STMicroelectronics Imaging Division, ,
Edinburgh
3Heriot-Watt University, Institute of Biological Chemistry, Biophysics
and Bioengineering, Edinburgh, U.K.
A
2.5pJ/b Readout Circuit for 1000fps Single-bit Quanta Image Sensor
Saleh Masoodian, Arun
Rao, Jiaju Ma, Kofi Odame and
Eric R. Fossum
Thayer School of Engineering, Dartmouth College, Hanover, NH, USA
Multi-Bit Quanta Image Sensors
Eric R. Fossum,
Thayer School of Engineering at Dartmouth,
Hanover, NH, USA
Luca Parmesan1,2, Neale A.W. Dutton1,2, Neil
Calder1, Nikola Krstajić1, Andrew J. Holmes2, Lindsay
A. Grant2, Robert K. Henderson1
1The University of Edinburgh, Edinburgh, UK
2STMicroelectronics, Imaging Division,
Edinburgh UK
Thomas Gerrits1, Shane Allman1, Daniel J. Lum2,
Varun Verma1, John Howell2, Rich Mirin1, Sae Woo Nam1
1National Institute of Standards and Technology, Boulder, USA
2University of Rochester,
Department of Physics and Astronomy, NY, USA
Session 10 Specialty Image Sensors
Session Chair: Shouleh Nikzad
Introductory paper:
Scientific, Back Illuminated CCD development for the Transiting
Exoplanet Survey Satellite
Vyshnavi Suntharalingam,
MIT Lincoln Lab, USA
CMOS Charge Transfer TDI With Front Side
Enhanced Quantum Efficiency
F. Mayer, S. Pesenti, F. Barbier,
H. Bugnet, J. Endicott, F. Devriere,
T. Ligozat
e2v semiconductors, Saint Egrève, France
Satoshi Nasuno, Shunichi Wakashima,
Fumiaki Kusuhara, Rihito
Kuroda, Shigetoshi Sugawa
Graduate School of Engineering, Tohoku University, Japan
A 2MP Oversampling Image Sensor with 2.75μs Row Time and Conditional Threshold Comparison
Thomas Vogelsan1, Michael Guidash1,
Craig Smith1, Jay Endsley1, Loc
Truong2 and Rami Yassine2
1 Rambus Inc., Sunnyvale, CA, USA ; 2 Forza Silicon Inc., Pasadena, CA, USA
A 4M,1.4e-noise, 96dB dynamic range, back-side
illuminated CMOS image sensor
Xinyang Wang 1,2, Cheng Ma1,2
1Gpixel Inc., ChangChun,
China, 2ChangChun Institute of Optics, Fine Mechanics and Physics,
CAS, Changchun, China
Toward Multi-MGy / Grad Radiation Hardened
CMOS Image Sensors for Nuclear Applications
V. Goiffon1, F. Corbière1, S. Rolando1,
M. Estribeau1, P. Magnan1, B. Avon1, J. Baer1,
M. Gaillardin2, P. Paillet2, S. Girard3, R.
Molina1, A. Chabane1, C. Marcandella2
1ISAE, Toulouse, France / 2CEA, DAM, DIF, France / 3Université
de Saint-Etienne, Laboratoire Hubert Curien, UMR-CNRS France
Session 11 Charge Multiplication Devices and Image Sensors
Session Chair: Lindsay
Grant
Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging
Technology
Pierre Fereyre1,
Frédéric Mayer1, Clément Buton2, Timothée Brugière2,
Mathieu Fournier1,3, Rémi Barbier2
1e2v, France
2CNRS/IN2P3,
Institut de Physique Nucléaire
de Lyon, France 3Lyon
University, France
Backside-Illuminated 4-T Pinned Avalanche Photodiode Pixel for Readout
Noise-Limited Applications
Tomislav Resetar1,2, Koen
De Munck2, Luc Haspeslagh2, Piet De Moor2,
Paul Goetschalckx2, Robert Puers1,2 and Chris Van Hoof1,2
1K.U. Leuven, ESAT, Leuven, Belgium ; 2IMEC,
Leuven, Belgium
A Flexible 32x32 SPAD Image Sensor with Integrated Microlenses
P. Sun, E. Charbona and R.Ishihara
Delft
University of Technology, Delft, The Netherlands
A NIR-Sensitivity-Enhanced Single-Photon Avalanche Diode in 0.18μm CMOS
Cristiano Niclass,
Hiroyuki Matsubara, Mineki Soga, Mitsuhiko
Ohta, Masaru Ogawa, and Tatsuya Yamashita.
Toyota Central R&D Labs, Inc., Nagakute, Aichi, Japan
Characterization of Single-Photon Avalanche Diodes in
Standard 140-nm SOI CMOS Technology
Myung-Jae Lee, Pengfei Sun, and Edoardo Charbon
TU Deft, The Netherlands
Yoshiyuki Kurokawa1, Takashi Nakagawa1, Shuhei Maeda1, Takuro
Ohmaru1, Takayuki Ikeda1,Yasutaka Suzuki1,
Naoto Yamade1, Hidekazu Miyairi1,
Shigeyuki Imura2, Kenji Kikuchi2,Kazunori Miyakawa2,
Hiroshi Ohtake2, Misao Kubota2,
Makoto Ikeda3, and Shunpei Yamazaki1
1 Semiconductor Energy Laboratory, Kanagawa, Japan
2 NHK Science and Technology Research Laboratories, Tokyo, Japan
3 Department of Electrical Engineering and
Information Systems, The University of Tokyo, Japan
Thursday, June 11th 2015
Session 12 Noise
Session Chair: Dun-Nian Yaung
Invited presentation:
B. Goossens , Hiep Luong, Jan Aelterman,
Aleksandra Pizurica, Wilfried
Philips
Ghent University, Belgium
B. Mamdy1,2
, F. Roy1 ,G.N. Lu2, N. Ahmed1,2
1STMicroelectronics, Crolles, France
2Institut des Nanotechnologies de Lyon (INL), Université Claude Bernard Lyon 1, Villeurbanne, France
Assim Boukhayma1,2,
Arnaud Peizerat1 and Christian Enz2
1CEA-LETI, Grenoble, France ;
2ICLAB, EPFL, Switzerland
CMOS image sensor reaching 0.34
e-RMS read noise by inversion-accumulation cycling
Qiang Yao, Bart Dierickx,
Benoit Dupont
Caeleste, Mechelen, Belgium.
Night Vision CMOS Image Sensors Pixel for SubmilliLux
Light Conditions
Amos Fenigstein, Adi
Birman, and Assaf Lahav
TowerJazz Semiconductor, Migdal
Haaemek, Israel
Session 13 High Dynamic Range Imagers and SOC
Session Chair: Shigetoshi Sugawa
A
1280x1080 4.2μm Split-diode Pixel HDR Sensor
in 110nm BSI CMOS Process
Trygve Willassen1, Johannes Solhusvik1, Robert Johansson1,Sohrab
Yaghmai1, Howard Rhodes2, Sohei
Manabe, Duli Mao2,
Zhiqiang Lin2, Dajiang
Yang2, Orkun Cellek2, Eric
Webster2, Siguang Ma2, and Bowei Zhang2
1OmniVision Technologies, 1Gaustadalléen 21, 0349 Oslo, Norway,
2OmniVision
Technologies, Santa Clara, USA
High Performance 1.3MPix HDR
Automotive Image Sensor
Tarek
Lulé1, Christophe Mandier1, Arnaud Glais1,
Gregory Roffet1, Roger Monteith2, Benoit Deschamps1
1
STMicroelectronics, Imaging Division, Grenoble,France ; 2STMicroelectronics, Imaging
Division, Edinburgh, UK
A 120dB DR and 5μm pixel pitch imager based on
local integration time adaptation
A. Peizerat1,
F. Guezzi1, A. Dupret1, R. Jalby1, L. Bruno de
Sa1, M. Benetti1, W. Guicquero1, Y.Blanchard2
1CEA-LETI,
Grenoble, France ; 2ESIEE, Noisy-Le-Grand, France
A 1 Megapixel HDR Image Sensor SoC
with Highly Parallel Mixed-Signal Processing
Jens Döge, Christoph Hoppe, Peter Reichel and Nico Peter Fraunhofer
Institute for Integrated Circuits IIS, Design
Automation Division EAS,Dresden,
Germany
Design of an RGBW Color VGA
Rolling and Global Shutter
Dynamic and Active-pixel Vision Sensor
Chenghan Li, Christian Brandli,
Raphael Berner, Hongjie
Liu, Minhao Yang, Shih-Chii
Liu, Tobi Delbruck
Institute of Neuroinformatics,
UZH & ETHZ, Zurich, Switzerland
Automatic DR and spatial
sampling rate adaptation for secure and privacy-aware ROI tracking based on
focal-plane image processing
Ricardo Carmona-Galán, Jorge Fernández-Berni, Ángel Rodríguez-
Vázquez
Institute of Microelectronics of Seville, Seville, Spain
Session 14 Global Shutter and ADC
Session Chair: Shung Chieh
A High Speed 1 MPix Sensor with Floating
Storage Gate Pixel
Alex Krymski
Luxima Technology LLC, Pasadena, CA, USA
A
1.2 MP 1/3” CMOS Image Sensor with Light Flicker Mitigation
Chris Silsby1, Sergey Velichko2, Scott Johnson2,
Yan Ping Lim1, Ray Mentzer1, Jeff Beck1
1ON Semiconductor, Corvallis, OR, USA ; 2ON
Semiconductor, Meridian, ID, USA
700
frames/s 2 MPixel global shutter image sensor with 2 Me- full well charge and 12 μm
pixel pitch
G. Meynants, X. Wu, S. Vanhoogenbemt, T. De Ridder, P. De Wit, K.
Ruythooren, K. Van Esbroeck
CMOSIS, Antwerp, Belgium
A
Flexible 14-bit Column-Parallel ADC Concept for Application in Wafer-Scale
X-ray CMOS Imagers
Henk Derks, Daniel Verbugt,
Laurens Korthout, Wim de Haan, Wasim Muhammad, Pierluigi Albertini
Teledyne-DALSA Professional Imaging,
Eindhoven, The Netherlands
Kazuya Kitamura1, Albert Theuwissen2,3
1NHK Science and Technical Research Laboratories, Tokyo, Japan
2Delft University of
Technology, Delft, The Netherlands, 3Harvest
Imaging, Bree, Belgium