CONTENTS
SESSION 1: THEORY AND
TECHNOLOGY
An Appraisal of Current Predictions of CCD Performance 1
M.F. Tompsett, Bell Laboratories, New Jersey, U.S.A.
Simulation for Device Design at Short Gate
Charge-Coupled Devices: 14
a Complete CCD Shift Register Computer Model.
S.G. Chamberlain and M.H. Elsaid, University of Waterloo, Ontario,
Canada.
Evaluation of Low Dark Current Charge-Coupled Devices 23
G.D. Declerk, K.M. DeMeyer, E.J. Janssens, E.E. Laes, J. Vander
Spiegel and C.L. Claeys, Katholicke Universiteit, Leuven, Belgium.
Influence of Surface States on the Charge
Transfer along the Dielectric- 31
V.V. Pospelov, R.A. Suris, B. I. Fouks and R.Z. Hafizov, Ministry of
Electronics Industry, Moscow, U.S.S.R.
O. Ohtsuki, H. Sei, K. Tanikawa and Y. Miyamoto, Fujitsu Laboratories
Ltd., Kobe, Japan.
Design Aspects of S-Shaped Bulk Charge-Coupled Devices. 44
M.J.J. Theunissen and H.W. Hanneman, Philips Research Laboratories,
Eindhoven, and H.A. Schmidt, Philips I.C. Development Laboratories,
Nijmegen, The Netherlands.
Bucket Brigade Devices-Circa 1976. 55
R.R. Buss and G.P. Weckler, Reticon Corporation, California, U.S.A.
SESSION 2: IMAGING
Visible
Charge-Coupled and Charge Injection Device Performance Tradeoffs. 66
R.D. Baertsch, General Electric! Corporate Research and Development,
New York, U.S.A.
Optimization of a Solid State Image Sensor. 75
H. Fu Tseng and G.P. Weckler, Reticon Corporation, California, U.S.A.
Some Design Considerations of CCD Imaging Applied
to High Accuracy 85
R.A. Brook and D.J. Purll, Sira Institute, Kent, U.K. and H. Sameulson,
ESTEC, Noordwijk, The Netherlands.
Application of CCD Imagers in High Shock Environments. 92
K. Ferris, R. Ely and L. Zimmerman, Naval Surface Weapons Center,
Virginia, U.S.A.
Low Light Levels
Application of CCD Imagers and Low Light Levels. 98
R.R. Holeman, R.S.R.E. Baldock, U.K., and P. Gardner, R.A.E., .,
Farnborough, U.K.
CBS-mode CCD for Low Light Level Imaging Applications. 117
H.T. Brown, General Electric Co., Wembley, and P.A. Gray and
P.J. Pool, English Electric Valve Co., Chelmsford, U.K.
Operating of CCDs in the Electron Bombarded Mode. 118
L. Caldwell, E. Smith and J. Boyle, Night Vision Laboratory, Fort
Belvoir, Virginia, U.S.A.
The Advantages of CCDs for Imaging at Low Light and Contrast Levels. 119
S.B. Campana, Naval Air Development Center, Warminster,
Pennsylvania, U.S.A.
Infra Red
C.T. Elliott, Royal Signals and Radar Establishment, Malvern, U•J<.
Monolithic Extrinsic Silicon IRCCDs. 145
A.W. Vere and C.T. Elliott, Royal Signals and Radar Establishment,
Malvern, U.K., and P. Migliorato,· Laboratorio di Elettronica della
Stato Solido del CNR, Roma, Italy.
Calculation of Optimum Ionization Energy for
Extrinsic Silicon 152
R.M. Logan, Royal Signals and Radar Establishment, Malvern, U.K.
SESSION 3: MEMORY AND
DIGITAL COMPUTATION
Device Design for CCD Digital Memory. 159
G.F. Amelio, Fairchild Camera and Instrument Corporation, Palo
Alto, California, U.S.A.
The Application of Charge-Coupling Concepts to MOS
Dynamic RAM 179
A. F. Tasch, Jr., P.K. Chatterjee, H-S Fu and T.C. Holloway, Texas
Instruments Incorporated, Dallas, Texas, U.S.A.
Error Correction Coding with Charge Transfer Devices. 189
D.O. Carhoun, T.F. Roome and E.A. Palo, The MITRE Corporation,
Massachusetts, U.S.A.
Charge-Coupled Device Digital Arithmetic
Functions: Experimental 190
T.A. Zimmerman and R.A. Allen, TRW Defense and Space Systems
Group, Redondo Beach, California, U.S.A.
Finite Field Arithmetic with Charge Transfer Devices. 197
T.F. Roome, D.O. Carhoun and E.A. Palo, The MITRE Corporation,
Massachusetts, U.S.A.
The CCD Memory in Microcomputer Systems 198
H. Kornstein, Intel Corporation Ltd., Oxford, U.K.
SESSION 4: SIGNAL PROCESSING
Spectral Analysis Using CCDs. 208
D.D. Buss, C.R. Hewes and M. de Wit, Texc.s Instruments Inc., Dallas,
Texas, and R.W. Brodersen, University of California, Berkeley, U.S.A.
The Performance of a CCD Signal Averager Coded to
Reduce Transfer 219
D.C. Cooper and B. Akham, University of Birmingham, U.K. and
J.B.G Roberts and R.D. Callan, Royal Signals and Radar Establishment,
U.K.
An Analysis of CCD Recursive Filters with
Application to MTI Radar 227
Filters. ·
A. Chowaniec, Bell Northern Research, Ottowa, Canada, and
G.S. Hobson, University of Sheffield, U.K.
CCD Programmable Correlator. 232
E.P. Herrmann, D.A. Gandolfo, G.Boornard and D.B. Stepps, RCA
Advanced Technology Laboratories, Camden, New Jersey, U.S.A.
A CCD Analog and Digital Correlator. 238
I. Lagnado and S. Steigerwalt, Naval Electronics Laboratory Center,
San Diego, California, and J. Bond, J. Speiser and H.W. Whitehouse,
Naval Undersea Center, San Diego, California, U.S.A.
Errors in Programmable CCD Transversal Filters and Correlators. 259
D.J. Maclennan, G.E. Corporate Research and Development,
Schenectady, U.S.A., J. Mavor, University of Edinburgh, and
Y.R. Yeow, University of Singapore.
A Microcomputer-Controlled Adaptive CCD Transfer Filter. 269
J.E. Dilley, M. Naughton, R.C.S. Marling, G.D. Cain and A.H. Abed,
Polytechnic of Central London, U.K. ·
CCD Accumulators in Spread Spectrum Signal Identification. 277
H. Lobenstein, M. Quick and A. Roeder, General Electric Aircraft
Equipment Division, New York, U.S.A., and W.E. Engeler, J. Tiemann
and R.D, Baertsch, General Electric Corporate Research & Development
Center, New York, U.S.A.
Signal Processors Incorporating CCD Shift Register Time Compressors. 282
P.M. Grant, M.A. Jack and J. Mavor, Dept. of Electrical Engineering,
and D. Saxton, Wolfson Microelectronics Liaison Unit, University of
Edinburgh, U.K.
A CCD Frequency Selective Filter. 291
A.P.H. McCabe and A.G. Hellier, The General Electric Co. Ltd., Hirst
Research Centre, Wembley, U.K.
A Quadruply Sensed CCD Transversal Filter for Quadrature Phasing. 292
C. Morandi, lstituto di Elettronica, Universita de Bologne, Italy, and
H. Wallinga, Twente Univers1ty of Technology, Enschede, The
Netherlands.
Cancellation of Aliasing in a CCD Low-Pass Filter. 302
J. L. Berger and J. L. Coutu res, Thomson-.CSF, Paris, France.
A Capacitively-Metered Input Circuit for Linear Operation of CCDs. 307
R.C. Tozer and G.S. Hobson, University of Sheffield, U.K.
A Time Delay and Integration CCD for a Serial Scanned IR Imager. 315
G.F. Vanstone, J.G. Harp, J.M. Keen, D.V. McCaughan and D.B.
Webb, Royal Signals and Radar Establishment, Malvern, U.K.
An MOS Amplifier for CCD Applications. 326
N. Weste, University of Adelaide, Australia, and J. Mavor, University
of Edinburgh, U.K.
Bipolar Peripheral Circuitry for CCDs. 339
J.M. Wilkinson, J.F. Dickson, V.A. Browne and K.D. Perkins, Allen
Clark Research Centre, The Plessey Co. Ltd., Towcester, U.K.
SESSION 5: SYSTEMS
Applications of Charge Transfer Devices in Television. 348
B.H.J. Cornelissen, L.J.M. Esser and L.J. Van de Polder, Philips
Research Laboratories, Eindhoven, The Netherlands.
A CCD Analog Memory System for Slow-scan Conversion
of Standard TV 364
S.P. Buchanan and R.R. Clark, Martin Marietta Aerospace, Orlando,
Florida, U.S.A.
An Experimental TV Ghost Cancellation Circuit
with Automatic Gain 371
H.W. Hanneman and B. Visser, Philips Research Laboratories, Eindhoven,
The Netherlands.
TDMA Using Time-compressed Analog Signals. 389
H.L. Weinberger, Hughes Aircraft Company, El Segundo, California,
U.S.A.