1997 IEEE Workshop on Charge-Coupled Devices
June 5-7, 1997, Bruges, Belgium
Papers should be cited as:
Author, Title, in Proc. 1997 IEEE Workshop on CCDs and Advanced Image Sensors, June 5-7, 1997 Bruges, Belgium.
| Title | Authors | Affiliation |
| A High Performance 5V-Only l/5-Inch 220k-Pixel CCD Image Sensor | T. Watanabe, E. Koyama, K. Yamamoto, E. Akaike, S. Takano, T. Inoue, K. Okada, T. Kawasaki, H. Urabe, H. Adachi, J. Nakai, K. Misawa
|
Sharp Corporation, Nara,Japan |
| Low Noise and High Speed Charge Detection in High Resolution CCD Image Sensors | J. Hynecek | Texas Instruments Inc.,Dallas, TX, USA |
| Characterization of building block imagers with respect to linear dynamic range | H. Folkerts, E. Roks, L. Korthout, A. Theuwissen | Philips Imaging Technology,Eindhoven, The Netherlands |
| CCD-Based Magnetic Field Imaging | N. 0, A. Nathan* | DALSA INC., Waterloo, ON,Canada.
* University of Waterloo,Waterloo, ON, Canada |
| A 1/4 Inch 330k Square Pixel Progressive Scan CMOS Active Pixel Image Sensor | M. Sasaki, E. Oba, K. Mabuchi, N. Tanaka, Y. Iida, R. Miyagawa | ULSI Research Laboratories, Toshiba Corporation,Kawasaki, Japan |
| An Experimental 4K x 2K Color Video Pickup System Based on CMD Imagers | K. Mitani, Y. Fujita, H. Shimamoto | NHK (Japan Broadcasting Corporation), Tokyo, Japan |
| Fast CMOS Imaging with High Dynamic Range | J. Huppertz, R. Hauschild, B. Hosticka, T. Kneip, S. Muller*, M. Schwarz | Fraunhofer Institut of Microelectronic Circuits and Systems, Duisburg, Germany.
* Gerhard-Mercator-University,Duisburg, Germany |
| A bipolar imager with bipolar field memory | M. Shinohara, S. Sugawa, Y. Nakamura, T. Ohmi* | Canon Inc., Kanagawa Japan.
* Tohoku University, Sendai,Japan |
| A 3.30×2.95 mm2 l/6-inch 250k-pixel IT-CCD image sensor | A. Asai, Y. Toumiya, K. Matsuzaki*, K. Nigawara, S. Kitayama*, Y. Wataya, K. Masuda | SONY Corporation,Kanagawa, Japan.
* SONY Kokubu Corporation,Kagoshima, Japan |
| Technology and Performance of VGA FT-Imagers with Double and Single Layer Membrane Poly-Si Gates | H. Peek, D. Verbugt, J. Maas, M. Beenhakkers | Philips Imaging Technology,Eindhoven, The Netherlands |
| Design and Processing Aspects of a Sixteen Tap, 32 Sector, 50 Megapixel Full Frame Image Sensor | M. Farrier, C. Smith, W. Pfister* | DALSA INC., Waterloo, ON,Canada.
* Recon-Optical Inc.,Barrington, IL, USA |
| A model for the diffusion behaviour of generation centers in CCDs | W.J. Toren, J. Bisschop* | Philips Imaging Technology,Eindhoven, The Netherlands.
* Philips Semiconductors,Nijmegen, The Netherlands |
| Near-100% fill factor standard CMOS active pixels | B. Dierickx, G. Meynants, D. Scheffer | IMEC, Leuven, Belgium |
| Frame-Transfer CMOS Active Pixel Sensor With Pixel Binning | Z. Zhou, B. Pain, E. Fossum* | Jet Propulsion Laboratory,Pasadena, CA, USA.
* Photobit, La Crescenta, CA,USA |
| A novel photoswitch image sensor | R. Dyck, J. Pinter, T. Selbo, S. Onishi, D. Xiao, L. Haynes*, H. Brown** | Lockheed Martin Fairchild Defense Systems, Milpitas,CA, USA.
* Intelligent Automation, Inc.,Rockville, MD, USA. ** Wright Laboratories, TyndallAFB, FL, USA |
| Leakage current reduction of large-area silicon microstrip sensors | W. Tsay, Y. Chen, L. Laih, J. Hong, A. Chen, W. Lin, y. Chang, S. Hou, J. Tang, C. Chio, S. Chiang, H. Ting | National Central University,Taiwan PAPER NOT PRESENTED |
| An Image Sensor using Quad Tree for Selective Scanning with Adaptive Resolution | J. Akita, K. Asada | University of Tokyo, Tokyo,Japan |
| Logarithmic-Converting CCD Line Sensor and Its Noise Characteristics | K. Takada, S. Miyatake | Minolta Co., Ltd., Osaka,Japan |
| a-Si:H avalanche multiplication p-i-n photodiode films | K. Sawada, H. Manabe, T. Ando | Shizuoka University,Hamamatsu, Japan |
| CCD cameras for medical X-ray imaging | A. Bruijns, R. Bastiaens, R. Snoeren, H. Reiter* | Philips Medical Systems, Best, The Netherlands.
* Philips Research Laboratories, Aachen,Germany |
| High Responsivity Photodetector on SOI substrate | W. Zhang, M. Chan, S. Fung, P. Ko | Hong Kong University of Science & Technology, Hong Kong |
| Optical simulation for image sensors by wave analysis | H. Mutoh
|
Link Research Corporation,Tokyo, Japan |
| Single Pixel Test Structures for Characterization and Comparative Analysis of CMOS Image Sensors
|
B. Fowler, D. Yang, H. Min, A. EI Gamal | Stanford University, Stanford,CA, USA |
| 3D Optoelectronic Simulations for CCD Imagers
|
A. Ruckelshausen, R. Tobergte, P. Thyen | Fachhochschule Osnabruck,Osnabruck, Germany |
| Anti-Blooming Optimisation using Simulations and Measurements for a VAB Process
|
G. Weale, M. Kiik, E. Fox, G. Ingram | DALSA INC., Waterloo, ON,Canada |
| An In-situ Storage Image Sensor (ISIS) with Elongated CCD Storage for a High-speed Video-Camera of One Million pps | T. Etoh, K. Takehara | Kinki University, Osaka, Japan |
| Reviews on Digital Still cameras
(Invited Paper)
|
M. Konishi, K. Iwabe | Fuji Photo Film Co., Ltd.,Saitama, Japan |
| Offset-free offset correction for Active Pixel Sensors
|
B. Dierickx, G. Meynants, D. Scheffer | IMEC, Leuven, Belgium |
| Recent Progress of CMD Imaging
|
T. Nakamura, K. Saitoh | Olympus Optical Co., Ltd.,Nagano, Japan |
| Wide Intrascene Dynamic Range CMOS APS Using Dual Sampling
|
O. Yadid-Pecht, E. Fossum* | Jet Propulsion Laboratory,Pasadena, CA, USA. * Photobit, La Crescenta, CA,USA |
| Driving Voltage Reduction of Shift Registers in IT-CCD Image Sensors
|
N. Mutoh, S. Kawai, T. Yamada, Y. Kawakami, T. Nakano, K. Orihara, N. Teranishi | NEC Corporation, Kanagawa,Japan |
| Automated optimisation of FT-CCD Image Pixels
|
A. Heringa, J. Bosiers*, E. Roks* | ED&T Services, Philips Research, Eindhoven, TheNetherlands. * Philips Imaging Technology,Eindhoven, The Netherlands |
| A 36 cm2 Large Monolythic pn-CCD Detector for X-ray Astronomy
|
L. Struder, H. Brauninger, U. Briel, R. Hartmann, G. Hartner, D. Hauff, N. Krause, B. Maier, N. Meidinger, E. Pfeffermann, M. Popp, C. Reppin, R. Richter, D. Satter, J. TrUmper, U. Weber, P. Holl*, J. Kemmer*, H. Soltau*, A. Viehl*, C. v. Zanthier* |
Max-Planck-Institut, Munchen,Germany. * Ketek GmbH,Oberschleissheim, Germany |
| A Low Smear p-substrate Frame Interline Transfer Sensor with Simplified kTC Noise Reduction | C. Smith, E. Fox, M. Miethig, M. Farrier | DALSA INC., Waterloo, ON,Canada |
| Active Pixel Image Sensors in 0.35 um CMOS Technology | S. Mendis, A. Budrys, J. Lin, K. Cham | Hewlett Packard, Palo Alto,CA, USA |
| Pulsed bipolar CMOS imager | T. Delbruck, N. Mascarenhas, M. Chi*, A. Bergemont*, C. Mead | Synaptics, San Jose, CA,USA. * National Semiconductor,Santa Clara, CA, USA |
| Design of an Image Sensor with On-Chip Oversampling Analog-to-Digital Conversion | J. Nakamura, T. Nomoto, T. Nakamura, B. Pain*, E. Fossum** | Olympus Optical Co., Ltd.,Tokyo, Japan. *Jet Propulsion Laboratory,Pasadena, CA, USA. **Photobit, LCC., Pasadena,CA, USA |
| A Single Chip CMOS APSDigital Camera | B. Olson, T. Shaw, B. Pain, R. Paniccaci*, B. Mansoorian*, R. Nixon*, E. Fossum* | Jet Propulsion Laboratory,Pasadena, CA, USA. * Photobit, La Crescenta, CA,USA |
| A 2V Driving Voltage 1/3-inch 410k-pixel Hyper-D Range CCD | T. Yamaguchi, I. Shimizu, K. Henmi, R Tanaka, T. Tanaka, H. Matsumaru, M. Miyashita, I. Ihara, S. Tashiro, M. Yamanaka, Y. Nishi,
K. Tachikawa*, H. Komobuchi** |
Matsushita Electronics Corporation, CCD division,Kyoto, Japan. * Matsushita Electronics Corporation, ULSI Process Techn. Development Center,Kyoto, Japan. ** Matsushita Electric Industrial CO., LTD, Kyoto,Japan. |
| Development of Back-Illuminated, Fully-Depleted CCD Image Sensors For Use in Astronomy and Astrophysics
|
S. Holland, R. Stover*, M. Wei*, G. Goldhaber, D. Groom, W. Moses,
C. Pennypacker, S. Perlmutter, N. Wang |
Lawrence Berkeley National Laboratory, Berkeley, CA,USA.
* University of CaliforniaObservatories, Lick Observatory
|
| Recent results with Delta-doped CCDs
|
S. Nikzad, A. Smith, Q. Yu, P. Grunthaner, S. Elliott | Jet Propulsion Laboratory,Pasadena, CA, USA |
| Non-Linear Output from Image Sensors: Applications, Techniques, and Limitations
|
E. Fossum | Photobit, La Crescenta, CA,USA. |
| Megapixel CMOS APS with Analog and Digital Readout
|
B. Mansoorian, G. Yang*, R. Panicacci, C. Wrigley*, C. Staller**, B. Pain*, E. Fossum |
Photobit, La Crescenta, CA,USA. * Jet Propulsion Laboratory,Pasadena, CA, USA. ** Boeing Defense and Space Group, Anaheim, CA, USA |
| Motion adaptive image sensor
|
T. Hamamoto, K. Aizawa, M. Hatori | University of Tokyo, Tokyo,Japan |
| Pixel Parallel and Column Parallel Architectures and their Implementations of On Sensor Image Compression
|
K. Aizawa, T. Hamamoto, Y. Ohtsuka, M. Hatori, M. Abe* | University of Tokyo, Tokyo,Japan. * NHK, Tokyo, Japan |
| A Wide Dynamic RangeCMOS Image Sensor
|
R. Ginosar, A. Gnusin | Israel Institute of Technology,Haifa, Israel |
| Packaging and Operation of Philips 7kx9k CCDs
|
M. Lesser, D. Ouellette, A. Theuwissen*, G. Kreider*, H. Michaelis** | Steward Observatory,University of Arizona, Tucson,USA. * Philips Imaging Technology,Eindhoven, The Netherlands. ** DLR, Institut fUr Planetenerkundung |
| A High Resolution, Low Cost CCD Family of Image Sensors for Digital Camera Applications
|
S. Bencuya, J. Toker, S. Haque | Polaroid Corporation,Cambridge, MA, USA |
| The design of a novel GaAs CCD multiplying D/A converter
|
H. Kwok, L. Chen | University of Victoria, Victoria,BC, Canada |
| Ultrafast Correlation Image Sensor: Concept, Design, and Applications
|
S. Ando, T. Nakamura, T. Sakaguchi | The University of Tokyo,Tokyo, Japan |