2007 INTERNATIONAL IMAGE SENSOR WORKSHOP
June 6-10, 2007 Ogunquit, ME
Papers should be cited as:
Title, Author(s), in Proc, 2007 International Image Sensors Workshop,
Ogunquit Maine, USA June 7-10, 2007.
| 9:00-10:00 | Registration |
| 10:00-10:15 |
Opening Remarks Eric Fossum – Remarks on behalf of
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Session 01 |
Discussion Session – I Session chair: Alex Krymski
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| 10:20-11:00 | Image Sensors and Image Quality in Mobile Phones Juha Alakarhu (Nokia, Tampere, Finland) |
Session 02 |
Image Sensors with Super-Small Pixels – I Session
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| 11:00-12:10 |
A 3 Mega-Pixel Back-illuminated Image Sensor in 1T5 Architecture with 1.45 μm Pixel Pitch Jens Prima1, Francois Roy1, Perceval Coudrain1, Xavier Gagnard1, Josep Segura1, Yvon Cazaux1, Didier Herault1, Nicolas Virollet1, Norbert Moussy2, Benoit Giffard2, Pierre Gidon2 (1FTM Imaging, STMicroelectronics, Crolles, France; 2CEA Léti-MINATEC, Grenoble, France) |
| 11:20-11:40 |
A 1.75μm Square Pixel IT-CCD using Gate Oxide Insulator Composed by a Single Layer Electrode Structure Junji Yamane, Yoshiaki Kitano, Keita Suzuki, Keita Hondo*, and Nobuhiro Karasawa (Semiconductor Business Group, Sony Corporation; *Sony Semiconductor Kyusyu Corporation, Japan) |
| 11:40-12:00 |
Optoelectronic Investigation for High Performance 1.4 μm pixel CMOS Image Sensors Seong-Ho Cho, Gibum Kim, Hyunpil Noh, Chang-Rok Moon, Kangbok Lee, Kwangok Koh, and Duckhyung Lee (Samsung Electronics Ltd, Yongin-city, Korea) |
| 12:00-12:06 |
Active Pixel Sensor Arrays in 90/65 nm CMOS-Technologies with Vertically Stacked Photodiodes S. Henker, C. Mayr, J-U. Schluessler, R. Schueffny, U. Ramacher, and A. Heitmann (University of Dresden, Institute of Circuits and Systems, Dresden,Germany) |
| 12:10-13:40 | Lunch |
Session 03 |
Discussion Session – II Session Chair: Albert
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| 13:40-14:20 | Auto Focus Technology R.C. Gutierrez, T.K. Tang and E.R. Fossum (Siimpel Corp, Pasadena, USA) |
Session 04 |
High Dynamic Range Image Sensors Session Chair: Shou-Gwo Wuu
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| 14:25-14:45 |
A Wide Dynamic Range CMOS Image Sensor with Resistance to High Temperatures Koichi Mizobuchi1, Satoru Adachi1, Tomokazu Yamashita1, Seiichiro Okamura1,Hiromichi Oshikubo1, Nana Akahane2 and Shigetoshi Sugawa2 (1DISP Development, Texas Instruments Japan, Inashiki, Japan, 2Gradute School of Engineering, Tohoku University, Sendai, Japan) |
| 14:45-15:05 |
A 121.8dB Dynamic Range CMOS Image Sensor using Pixel-Variation-Free Midpoint Potential Drive and Overlapping Multiple Exposures Yusuke Oike, Atsushi Toda, Tadayuki Taura, Akihiko Kato, Hiroki Sato, Masanori Kasai, and Tadakuni Narabu (Sony Corporation, Atsugi, Japan) |
| 15:05-15:25 |
A High Dynamic Range Digital Linlog CMOS Image Sensor Architecture Based on Event Readout of Pixels and Suitable for Low Voltage Operation Alexandre Guilvard1,2, Pierre Magnan1,Josep Segura2, Philippe Martin-Gonthier1 (1Supaero, Toulouse, France; 2STMicroelectronics, Crolles, France) |
15:25-15:45 |
Coffee Break |
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Session 05 |
Discussion Session – III Session
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| 15:45-16:25 |
Performance of Solid-state Image Sensors in Medical X-Ray Applications Inge M. Peters (Dalsa Professional Imaging, Eindhoven, The Netherlands) |
Session 06 16:25-17:30 |
Poster Papers – I Session Chair: Dan Mcgrath |
| P1 |
Highlight Scene FPN on Shared Pixels and a Reduction Technique Takashi Watanabe, Katsuji Kimura, Masamitsu Taki, Mitsuru Homma, Shoko Daikoku, and Tetsuya Fujimoto, and Kiyotoshi Misawa (Imaging and Sensing Module Division, LSI Group, Sharp Corporation, Japan) |
| P2 |
¼ Inch 2Mega CMOS Image Sensor Fabrication Se Jung Oh*, Keun Hyuk Lim**, Jae Young Rim*, Chan Ki Kim*, An Sik Choi*, Do Young Lee* (* SiliconFile Technologies Inc. Seoul, Korea, **DongBu Electronics, Korea) |
| P3 |
Implementing a CMOS Image Sensor Noise Performance Model Keith Findlater1, Ryan Gow2, David Renshaw3, Lindsay Grant4, John Hart4, Stuart McLeod4, Robert Nicol4(1Gigle Semiconductor, Edinburgh, UK; 2University of Oxford, Oxford, UK;3University of Edinburgh, Edinburgh, UK; 4STMicroelectronics Imaging Division, Edinburgh, UK) |
| P4 | Noise Analysis of a CCD / CMOS Hybrid Low Light Level Image Sensor Boyd Fowler and Chiao Liu (Fairchild Imaging, Mipitas, USA) |
| P5 |
A 2.3e- Read Noise 1.3Mpixel CMOS Image Sensor with Per-Column Amplifier Kwang-Bo Cho, Chiajen Lee, Siri Eikedal, Hai Yan, Taehee Cho, Tien-Min Miao, Jason Song, Christopher Zeleznik, Alexander Mokhnatyuk, and Sandor Barna (Micron Technology Inc, Pasadena, USA) |
| P6 | Continuous Time Column Parallel Readout for CMOS Image Sensor G.G. Storm, M.D. Purcell, A. Laflaquiere, R.A. Elliott, L.A. Grant, T.Lule1, F. Mutze1, M.Sommer1 (STMicroelectronics, Edinburgh, UK,1STMicroelectronics, Imaging Division, Grenoble, France) |
| P7 |
Analysis of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG K. Abe1, S. Sugawa1, R. Kuroda1,4, S. Watabe1, N. Miyamoto2, A. Teramoto2, T. Ohmi2, Y. Kamata3 and K. Shibusawa3 (1Graduate School of Engr., Tohoku University, Sendai, Japan; 2New Industry Creation Hatchery Center, Tohuku University, Japan; 3Miyagi Oki Electric Co, Japan; 4JSPS Research Fellow) |
| P8 |
Consideration of Dark Current Generation at The Transfer Channel Region in the Solid State Image Sensor Yoshihisa Kunimi1 and Bedabrata Pain (1Asahi Kasei EMD Corp) |
| P9 |
Gamma-Ray Irradiation Effects on CMOS Image Sensors in Deep Sub-Micron Technology Padmakumar R. Rao1, Xinyang Wang1, Adri J. Mierop2, and Albert J.P. Theuwissen1,2 (1Delft University of Technology, Delft, The Netherlands,2DALSA, Eindhoven, The Netherlands) |
| P10 |
1.4 Gpix/s, 2.9Mpix CMOS Image Sensor for Readout of Holographic Data Memory Roel Aerts, Steve Domer, Judy Fong, Kellie Vanda, Ray Rubacha, Brannon Harris and Tomas Geurts (Cypress Semiconductor, Mechelen, Belgium) |
| P11 | A High Speed 4 Megapixel Digital CMOS Sensor A. Krymski (Alexima, Pasadena, USA) |
| P12 |
Comparison of Global Shutter Pixels for CMOS Image Sensors Stefan Lauxtermann, Adam Lee, John Stevens, and Atul Joshi (Teledyne Imaging Sensors, Camarillo, USA) |
| P13 |
Dynamic Range Extension of CMOS Imager With Linear Response by Hybrid Use of Active and Passive Pixel Readouts Keiichiro Kagawa1, Yudai Adachi1, Yugo Nose2, Kuniyuki Tani2, Atsushi Wada2, Masahiro Nunoshita1, and Jun Ohta1 (1Graduate School of Materials Science, Nara Institute of Science and Tech., Ikoma, Japan; 2Sanyo Electric Co., Japan) |
| P14 |
A Wide Dynamic Range CMOS Image Sensor with Dual Capture using Floating Diffusion Capacitor Dongsoo Kim, Dongmyoung Lee, Seunghyun Lim, and Gunhee Han (Dept. of Electrical Engineering, Yonsei University, Seoul, Korea) |
| P15 |
Analog Readout Circuitry for Wide-Dynamic Range CMOS Image Sensors Jose Tejada, Hirokazu Sawada, Nana Akahane*, and Shigetoshi Sugawa* (Texas Instruments, Japan; *Tohoku University, Sendai, Japan) |
| P16 | Monolithic Active Pixel Matrix with Binary Counters in an SOI Process Gregorz Deptuch1, and Raymond Yarem2 (1Brookhaven National Lab, Upton,USA; 2Fermi National Accelerator Laboratory, Batavia, USA) |
| P17 |
Timepix, a 65k programmable pixel readout chip for arrival time, energy and/or event counting measurements X. Llopart, R. Ballabriga, M.Campbell, E.H.M. Heijne, L. Tlustos and W. Wong (CERN, Geneva, Switzerland) |
| P18 |
Dichromatic self timed spectral measurement circuit with digital output in vanilla CMOS Daniel Fasnacht, and Tobi Delbruck (Inst. of Neuroinformatics UNI–ETH,Zurich, Switzerland) |
| P19 |
High Speed 2D Motion Detection Image sensor with velocity Filtering Function Toshiyuki Sugita, Kenichi Nakayama, Takashi Yoshida, Takayuki Hamamoto, and Kazuya Kodama* (Tokyo University of Science, Tokyo, Japan; * National Institute of Informatics, Tokyo, Japan) |
| P20 |
Towards Smarter Ranging Pixels with High Dynamic Range: Sensitivity-Tuning of Current Assisted Photonic Demodulators Ward van der Tempel, Daniel Van Nieuwenhove, Riemer Grootjans, and Maarten Kuijk (Department of Electronics and Informatics (ETRO), Vrije Universiteit Brussel, Brussel, Belgium) |
| 18:15-20:15 | Dinner |
Session 07 19:50-20:15 |
Poster Papers – II Session Chair: Hidekazu Takahashi
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| P21 |
Trends in CMOS Imager Technology for Low Power and Low Cost Applications Don Scansen and Jochonia Nxumalo (Semiconductor Insights Inc, Kanata,Canada) |
| P22 | Applied Mathematics to Simplify Imager and Camera Evaluation Peter Centen (Grassvalley, Breda, The Netherlands) |
| P23 |
A custom CMOS imager for wavelength-multiplexed indoor optical LANs Tomoya Miyawaki, Keiichiro Kagawa, Itsuki Nagahata, Masahiro Nunoshita, and Jun Ohta (Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan) |
| P24 |
An Optical/Potential/Voltammetric Multifunctional CMOS Image Sensor for On-Chip Biomolecular/Neural Analytical Applications T. Tokuda, S. Sato, K. Kagawa, M. Nunoshita, and J. Ohta (Graduate School of Material Science, Nara Institute of Science and Technology, Ikoma, Japan) |
| P25 |
Design and Packaging of an Implantable CMOS Neural Imaging and Interface Device D. C. Ng1, T. Nakagawa1, T. Mizuno1, T. Tokuda1, M. Nunoshita1,H. Tamura2, Y. Ishikawa2, S. Shiosaka2, and J. Ohta1 (1Graduate School of Materials Science, 2Graduate School of Biological Sciences, Nara Institute of Science and Technology, Ikoma, Japan) |
| P26 |
An Efficient Capacity and Image Lag Simulation Method of CMOS Image Sensor Kee-Hyun Paik, Jongcheol Shin*, Seok-Ha Lee*, Chang-Rok Moon*, Chang-Hyo Koo, Keun-Ho Lee, Duckhyung Lee*, Young-Kwan Park, and Moon-Hyun Yoo (CAE Team, Technology Development Team*, Memory Division, Samsung Electronics Co., Hwasung City, Korea) |
| P27 | 3-D Wave Optical Simulation of Light Wave-guide Structures by LBEM Hideki Mutoh and Shigetoshi Sugawa* (Link Research Corporation, Tokyo,Japan; *Graduate School of Engineering, Tohoku University, Aramaki, Japan) |
Session 08 |
Discussion Session – IV Session Chair: Eric Fossum
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| 8:30-9:10 |
What Camera Manufacturers Want Sunita A. Mathur, Michael A. Okincha, Michael D. Walters (Vistapoint Technologies, San Jose, USA) |
Session 09 |
Back-illuminated Imagers Session Chair: Pierre Magnan
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| 9:10-9:30 |
Radiometric Performance Enhancement of Hybrid and Monolithic Backside Illuminated CMOS APS for Space-borne Imaging J. Bogaerts1, K. De Munck1, P. De Moor1, D. Sabuncuoglu Tezcan1, I. Ficai Veltroni2, G. Lepage3, C. Van Hoof1 (1IMEC, Heverlee, Belgium; 2Galileo Avionica, Campi Bisenzio, Italy; 3Cypress, Mechelen, Belgium) |
| 9:30-9:50 |
Back-Illuminated, Three-Dimensionally Integrated CMOS Imager with In-Pixel CDS V. Suntharalingam, G. Prigozhin, R. D’Onofrio, S. Kissel, and M. Bautz (MITLincoln Laboratory, Lexington, USA) |
| 9:50-10:10 |
Wafer-Level Thinned CMOS Imagers in a Bulk-CMOS Technology Bedabrata Pain, Chao Sun, Paula Vo, Bruce Hancock, Thomas J. Cunningham, Chris Wrigley, Risaku Toda, Victor White, Amrita Banerjee* and Durgmadhab Misra* (Jet Propulsion Laboratory, Pasadena, USA; *Dept of ECE, New Jersey Institute of Technology, Newark, USA) |
| 10:10-10:40 | Coffee Break |
Session 10 10:40-11:10 |
Poster Papers – III Session Chair:
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| P28 |
Color filter array with sparse color sampling crosses for mobile phone image sensors Gang Luo (Harvard University, USA) |
| P29 |
Crosstalk, Color Tint and Shading Correction for Small Pixel Size Image Sensor Alexander Getman, Timofei Uvarov, YongIn Han, Bumsuk Kim, JungChak Ahn, YongHee Lee (Samsung Electronics Ltd, Yongin-City, Korea) |
| P30 |
A Monolithic 111-M Pixel High Speed, High Resolution CCD Richard Bredthauer, Greg Bredthauer, and Kasey Boggs (Semiconductor Technology Associates, Inc., San Juan Capistrano, USA) |
| P31 |
Sensor Development for the Large Synoptic Survey Telescope P. O’Connor, V. Radeka, and P. Takacs (Brookhaven National Laboratory, Upton, USA) |
| P32 |
Lawrence Berkeley National Laboratory 2Kx4K High-resistivity CCDs for the Keck 10-meter Telescope Low Resolution Imaging Spectrograph R.J. Stover, M. Wei, W.E. Brown, and L.B. Robinson (UCO/Lick Observatory,University of California Santa Cruz, USA) |
| P33 |
High Performance Large Format UV/optical/near IR Detector Arrays Shouleh Nikzad, Michael E. Hoenk, Jordana Blacksberg, Todd J. Jones, and Thomas J. Cunningham (Jet Propulsion Laboratory, Pasadena, USA) |
| P34 | Highly Sensitive VGA FEA-HARP Image Sensor N. Egami1, M. Nanba1, Y. Honda1, Y. Hirano1, K. Miyakawa1, Y. Ookawa1, T. Watabe1, S. Okazaki1, K. Miya2, K. Nakamura2, T. Niiyama2, M. Taniguchi2, S. Itoh2, and A. Kobayashi3 (1NHK Science & Technical Research Labs, Tokyo, Japan; 2 Futaba Co., Chiba, Japan; 3Hamamatsu photonics K.K., Japan) |
| P35 |
A 1½D CMOS Active Pixel Sensor for X-ray imaging R.Turchettaa, A. Fanta, P. Gasioreka, C. Esbrandb, J. A. Griffithsb, M. G. Metaxasb, G. J. Royleb, R. Spellerb, C. Venanzib, P. F. van der Steltc, H. Verheijc, G. Lic, S. Theodoridisd, H. Georgioud, D. Cavourase, G. Hallf, M. Noyf, J. Jonesf, J. Leaverf, D. Machinf, S. Greenwoodf, M. Khaleeqf, H. Schulerudg, J. M. Østbyg, F. Triantish, A. Asimidish, D.Bolanakish, N. Manthosh, R. Longoi, A. Bergamaschii (aRutherford Appleton Laboratory, Chilton, UK;bDepartment of Medical Physics & Bioengineering, University College London, UK; cAcademic Centre for Dentistry, Vrije Universiteit & University of Amsterdam, The Netherlands; dDepartment of Informatics & Telecommunications, University of Athens, Greece; eMedical Image and Signal Processing Laboratory, Department of Medical Instrument Technology, Technological Education Institution of Athens, Greece; fHigh Energy Physics Group, Department of Physics, Imperial College, London, U.K; gDivision of Electronics and Cybernetics, SINTEF, Oslo, Norway; hDepartment of Physics, University of Ioannina, Greece; iDepartment of Physics, University of Trieste, Italy) |
| P36 |
SOI-based Monolithic Imaging Technology for Scientific Applications Bedabrata Pain, Chao Sun, Xinyu Zheng, Suresh Seshadri, and Thomas J. Cunningham (Jet Propulsion Laboratory, Pasadena, USA) |
| P37 |
A 10b Column-wise Two-Stage Single-Slope ADC for High-Speed CMOS Image Sensor Jeonghwan Lee, Seunghyun Lim, and Gunhee Han (Dept. of Electrical Engineering, Yonsei University, Seoul, Korea) |
| P38 |
Pixel-Level A/D Conversion: Comparison of Two Charge Packets Counting Techniques Arnaud Peizerat, Marc Arques, Patrick Villard, Jean-Luc Martin (LETA-CEA,Grenoble, France) |
Session 11 |
Advanced Fabrication Techniques Session Chair: Jerry
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| 11:10-11:30 |
Three-Dimensional Integration Technology for Advanced Focal Planes Craig Keast, Brian Aull, Jim Burns, Chenson Chen, Jeff Knecht, Brian Tyrrell, Keith Warner, Bruce Wheeler, Vyshi Suntharalingam, Peter Wyatt, and Donna Yost (Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, USA) |
| 11:30-11:50 |
High Sensitivity of Dielectric films Structure for Advanced CMOS Image Sensor Technology Chung-Wei Chang1,2, Shou-Gwo Wuu1, Dun-Nian Yaung1, Chien-Hsien Tseng1, Han-Chi Liu1, David Yen1, Yi-Jiun Lin1, Chun-Ming Su1, Chun-Yao Ko1, C.Y. Yu1, C.H. Lo1, F.J.Hsiu1, C.S.Tsai1, Chung S. Wang1, Mingo Liu1, Chrong-Jung Lin2, Ya-Chin King2 (1Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C.; 2Department of Electrical Engineering, National Tsing Hua University, Taiwan, R.O.C.) |
| 11:50-12:10 |
Reliability of CMOS image sensor with polymer lightpipe J. Gambino, K. Ackerson, B. Guthrie, B. Leidy, W. Abadeer, S. Mongeon, D. Meatyard, J. Adkisson, R. J. Rassel, J. Ellis-Monaghan, and M. Jaffe (IBMMicoelectronics, Essex Junction, USA) |
| 12:10-12:16 |
Integrated Processes for Detector Back Illumination Richard C. Westhoff, Robert K. Reich, Andrew H. Loomis, and James A. Gregory (MIT Lincoln laboratory, Lexington, USA) |
| 12:20-17:30 | Lunch Pick-up + Afternoon Activities |
| 17:30-19:00 | Poster Viewing (incl. Hors D’oeuvres) |
| 19:00-21:00 | Dinner |
Session 12 |
Noise/Dark Current in Image Sensors Session Chair:
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| 8:30-8:50 |
Modeling of the Temporal Pixel to Pixel Noise of CMOS Image Sensors Cédric Leyris, François Roy, Didier Hérault, and Mathieu Marin (Stmicroelectronics, Crolles, France) |
| 8:50-9:10 |
Characterization of the Buried Channel n-MOST Source Followers in CMOS image sensors Xinyang Wang, Padmakumar R. Rao, and Albert J.P. Theuwissen (DelftUniversity of Technology, Delft, The Netherlands) |
| 9:10-9:30 |
Column Parallel Signal Processing Techniques for Reducing Thermal and Random Telegraph Noises in CMOS Image Sensors Shoji Kawahito and Nobuhiro Kawai (Research Institute of Electronics,Shizuoka University, Hamamatsu, Japan) |
| 9:30-9:36 |
Optimization of Random Telegraph Noise Non Uniformity in a CMOS Pixel with a pinned-photodiode Assaf Lahav, Dmitry Veinger, Amos Fenigstein, and Amit Shiwalkar* (Tower Semiconductor Ltd, Israel; *Biomorphic VLSI Inc, USA) |
| 9:36-9:42 |
Twinkling Pixels: Random Telegraph Signals at Reset Gate Edge Bedabrata Pain, Thomas J. Cunningham, Bruce Hancock, Chao Sun, and Chris Wrigley (Jet Propulsion Lab., California Inst. of Techonology, Pasadena, USA) |
| 9:42-9:48 |
Evaluation of a Small Negative Transfer Gate Bias on the Performance of 4T CMOS Image Sensor Pixels. Hyungjun Han, Hongjoo Park, Parker Altice, Woonil Choi, Younsub Lim, Sangjoo Lee, Seok Kang, Jaeyeong.kim, Smith Yoon and Jerry Hynecek (Magnachip Semiconductor Ltd, Cheongju, Korea) |
| 9:48-9:54 | Some Thoughts on Diffusion Dark Current M.M. Blouke (Ball Aerospace & Technologies Corp, Boulder, USA) |
| 9.54-10:30 | Coffee break |
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Session 13 |
Discussion paper – VI Session Chair: Bedabrata Pain
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| 10:30-11:10 |
Will Avalanche Photodiode Arrays Ever Reach 1 Megapixel?
Edoardo Charbon (Swiss Federal Inst. of Technology, Lausanne, Switzerland) |
Session 14 |
Photon Counting/Time Of Flight Image Sensors Session
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| 11:10-11:30 |
A CMOS Single-Photon Avalanche Diode Sensor for Fluorescence Lifetime Imaging Fausto Borghetti, Daniel Mosconi, Lucio Pancheri, and David Stoppa (FBK-irst Centre for Scientific and Technological Research, Trento, Italy) |
| 11:30-11:50 |
A TOF Range Image Sensor with an Ambient Light Charge Drain and Small Duty-Cycle Light Pulse Tomonari Sawada1, Shoji Kawahito1, Masakatsu Nakayama1, Kana Ito1, Izhal Abdul Halin1, Mitsuru Homma2, Takeo Ushinaga2, and Yasunari Maeda3(1Shizuoka University, Hamamatsu, Japan; 2Sharp Corporation, Nara, Japan;3Suzuki Motor Corporation, Hamamatsu, Japan) |
| 11:50-11:56 | Dynamic Quenching for Single Photon Avalanche Diode Arrays Justin Richardson1,2, Robert K. Henderson1, David Renshaw1 (1The Universityof Edinburgh, Institute for Integrated Micro and Nano Systems, Edinburgh, U.K; 2STMicroelectronics Imaging Division, Edinburgh, UK) |
| 11:56-12:02 |
A Compact Low-Voltage Electron Bombarded Array Shouleh. Nikzad, Todd.J. Jones, Michael.E. Hoenk, Chris. Martin, Steve. Kaye, and Patrick. Morrissey* (Jet Propulsion Laboratory, Pasadena, USA; *California Institute of Technology, Pasadena, USA) |
| 12:05-13:40 | Lunch |
Session 15 |
Discussion Session – V Session Chair: Boyd Fowler
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| 13:40-14:20 | Color Processing Pipeline Albert J. P. Theuwissen (DALSA, The Netherlands) |
Session 16 |
Alternative On-Chip Color Capture Approaches Session
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| 14:20-14:40 |
High Sensitivity Color CMOS Image Sensor with White-RGB Color Filter Array and a Novel Color Separation Process Using Edge Detection Hiroto Honda1, Yoshinori Iida1, and Yoshitaka Egawa2 (1Corporate Research and Development Center, Toshiba Corp., Japan; 2Semiconductor Company, Toshiba Corp, Japan) |
| 14:40-15:00 |
IR/Color Composite Image Sensor with VIPS (Vertically Integrated Photodiode Structure) Jeong-Ho Lyu, Seok Choi1, Jae Heon Choi, Jung Hyun Nam1, and Jin Bok Jung1 (1Miru Data System Co., Suwon, Korea; Maru LSI Co., Suwon, Korea) |
| 15:00-15:20 |
Gr Gb difference in 3M CMOS Image Sensor with 1.75μm pixel Bumsuk Kim, Yoonho Jang, Kyoungsik Moon, Eun-Gyu Lee, Alexander Getman, JungChak Ahn, and YongHee Lee (Samsung Electronics Co. Ltd, Yongin-City, Korea) |
| 15:20-15:40 |
CMOS Color Image Sensor with Overlaid Organic Photoconductive Layers: Depression of Dark Current Shunji Takada, Mikio Ihama, and Masafumi Inuiya (Fujifilm Corp, Kanagawa,Japan) |
| 15:40-15:46 |
A Buried Triple Junction Self-Reset Pixel in a 0.35μm High Voltage CMOS Process Thomas Ross, Robert K. Henderson, Bruce Rae, and David Renshaw (Instituteof Micro and Nano Systems, Univ of Edinburgh, Edinburgh, UK) |
| 15:46-16:20 | Coffee break |
Session 17 |
Integrated Image Sensors on a chip (ISOC) Session
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| 16:20-16:40 | An SXGA CMOS Image Sensor with 8 Gbps LVDS Serial Link T. Cools1, P. Deruytere1, J. De Bondt1, R. Sankhe1, T. Geurts1, K. Takada2, T. Yamamoto2 (1Cypress Semiconductor, Mechelen, Belgium; 2NED, Osaka,Japan) |
| 16:40-17:00 |
A 600×600 Pixel, 500 FPS CMOS Image Sensor with a 4.4 μm Pinned Photodiode 5-Transistor Global Shutter Pixel I. Takayanagi, Y. Mo*, H. Ando, K. Kawamura, N. Yoshimura, K. Kimura, T. Otaka, S. Matsuo, T. Suzuki, F. Brady**, and J. Nakamura (Micron Japan, Tokyo, Japan, * Micron Technology, Inc., Pasadena, USA, ** Micron Technology, Inc., Boise, USA) |
| 17:00-17:20 | 2Mpix 2.6 μm Pixel Size Image Sensor in AIC Technology T. Lulé, F. Mütze, M. Sommer, J. Prima1, F. Roy1, B. Glück1, D. Thomas1, R. Nicol2 (STMicroelectronics, Imaging Division, Crolles, France;1STMicroelectronics, France; 2STMicroelectronics, Edinburgh, UK) |
| 17:20-17:40 |
52 Mega-pixel APS-H-size CMOS Image Sensor for Super High Resolution Image Capturing Masaaki Iwane, Takashi Matsuda, Takashi Sugai, Koichi Tazoe, Takashi Okagawa, Toshiaki Ono, Takanori Watanabe, Katsuhisa Ogawa, Hidekazu Takahashi, and Shunsuke Inoue (Canon Inc, Ayase-shi, Japan) |
| 17:40-18:00 |
A CMOS Image Sensor for Earth Observation with High Efficiency Snapshot Shutter Gérald Lepage1, Alex Materne2, Christophe Renard3 (1Cypress – FillFactory,Mechelen, Belgium; 2CNES, Toulouse, France; 3Thales Alenia Space, CannesLa Bocca, France) |
| 18:00-18:06 | Variability Limits the Advantage of Photo Diode’s Zero Bias Operation Bart Dierickx (Caeleste, Antwerp, Belgium; IMEC, Leuven, Belgium) |
| 18:45-21:00 | Banquet + Walter Kosonocky Award Presentation |
Session 18 |
Image Sensors with Super-Small Pixels – II Session
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| 9:00-9:20 |
Super Small, Sub 2µm Pixels For Novel CMOS Image Sensors G. Agranov, R. Mauritzson; S. Barna, J. Ladd, J. Jiang, A. Dokoutchaev, and X. Fan (Micron Technology Inc, Boise, USA) |
| 9:20-9:40 |
Stratified Photodiode a New Concept for Small Size High Performance CMOS Image Sensor Pixels. Younsub Lim, Kyunglak Lee, Heejeong Hong, Jaeyeong Kim, Seunghoon Sa, Juil Lee, Daebyung Kim and Jerry Hynecek (MagnaChip Semiconductor Ltd., Cheongju, Korea) |
| 9:40-10:00 |
Improved Design of 1T Charge-Modulation Pixel Structure for Small-Size and Low-Dark-Current Achievements Arnaud Tournier1,2, François Roy1, Guo-Neng Lu2, Benoît Deschamps1(1STMicroelectronics, Crolles, France; 2Université de Lyon, Institut des Nanotechnologies de Lyon, Villeurbanne, France) |
| 10:00-10:20 | Coffee break |
Session 19 |
Scientific Image Sensors Session Chair: Craig Keast
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| 10:20-10:40 |
A 28M 43 cm2 Full-Frame CCD Imager for Medical and Scientific Applications Jan T. Bosiers, Bart Dillen and Louis Meessen (DALSA Professional Imaging,Eindhoven, The Netherlands) |
| 10:40-11:00 |
Orthogonal Transfer Arrays for Wide-Field Adaptive Imaging Barry E. Burke*, John L. Tonry**, Michael J. Cooper*, Peter E. Doherty*, Andrew H. Loomis*, Douglas J. Young*, and Peter Onaka** (*MIT Lincoln Laboratory, Lexington, USA , **Institute for Astronomy, University of Hawaii, Hawaii, USA) |
| 11:00-11:20 |
High Performance CMOS Image Sensor for Low Light Imaging Xinqiao (Chiao) Liu, Boyd Fowler, Hung Do, Steve Mims, Dan Laxson, and Brett Frymire (Fairchild Imaging, Milpitas, USA) |
| 11:20-11:26 |
2.5 μm Pixel Linear CCD Nixon O, Lei Wu, Melanie Ledgerwood, John Nam, and Jonathan Huras (DALSA Inc, Waterloo, Canada) |
| 11:26-11:32 | Performance of NIR InGaAs Imager Arrays for Science Applications S. Seshadria, D.M. Colea, B. Hancocka, P. Ringolda, C. Peaya, C.Wrigleya, M. Bonatib, M.G. Brownc, M. Schubnellc, G. Rahmerb, D. Guzmanb, D. Figerd, G. Tarlec, R.M. Smithb, and C. Bebeke (aJet Propulsion Lab., USA, bCalifornia Inst. of Tech., USA, cUniv. of Michigan, USA, dRochester Inst. of Tech., USA andeLawrence Berkeley National Lab., Department of Physics, USA) |
| 11:35-11:40 | Closing Remarks |