2007 INTERNATIONAL IMAGE SENSOR WORKSHOP

June 6-10, 2007 Ogunquit, ME

Papers should be cited as:
Title, Author(s), in Proc, 2007 International Image Sensors Workshop,
Ogunquit Maine, USA  June 7-10, 2007.


 

9:00-10:00 Registration
10:00-10:15
Opening Remarks Eric Fossum – Remarks on behalf of
the Organizing Committee Bedabrata Pain –
Chairman’s remarks
   
Session 01
Discussion Session – I Session chair: Alex Krymski
10:20-11:00 Image Sensors and Image Quality in Mobile Phones Juha Alakarhu (Nokia, Tampere, Finland)
   
Session 02
Image Sensors with Super-Small Pixels – I Session
Chair: Johannes Solhusvik
11:00-12:10 A 3 Mega-Pixel Back-illuminated Image Sensor in 1T5 Architecture with
1.45 μm Pixel Pitch
Jens Prima1, Francois Roy1, Perceval Coudrain1, Xavier Gagnard1, Josep Segura1, Yvon Cazaux1, Didier Herault1, Nicolas Virollet1, Norbert Moussy2, Benoit Giffard2, Pierre Gidon2 (1FTM Imaging, STMicroelectronics, Crolles, France; 2CEA Léti-MINATEC, Grenoble, France)
11:20-11:40 A 1.75μm Square Pixel IT-CCD using Gate Oxide Insulator Composed by a
Single Layer Electrode Structure
Junji Yamane, Yoshiaki Kitano, Keita Suzuki, Keita Hondo*, and
Nobuhiro Karasawa (Semiconductor Business Group, Sony Corporation;
*Sony Semiconductor Kyusyu Corporation,
Japan)
11:40-12:00 Optoelectronic Investigation for High Performance 1.4 μm pixel CMOS
Image Sensors
Seong-Ho Cho, Gibum Kim, Hyunpil Noh, Chang-Rok Moon, Kangbok Lee,
Kwangok Koh, and Duckhyung Lee (Samsung Electronics Ltd, Yongin-city,
Korea)
12:00-12:06 Active Pixel Sensor Arrays in 90/65 nm CMOS-Technologies with
Vertically Stacked Photodiodes
S. Henker, C. Mayr, J-U. Schluessler, R. Schueffny, U. Ramacher, and
A. Heitmann (
University of Dresden, Institute of Circuits and Systems, Dresden,Germany)
12:10-13:40 Lunch
   
Session 03
Discussion Session – II Session Chair: Albert
Theuwissen
13:40-14:20 Auto Focus Technology R.C. Gutierrez, T.K. Tang and E.R. Fossum (Siimpel Corp, Pasadena, USA)
   
Session 04
High Dynamic Range Image Sensors Session Chair: Shou-Gwo Wuu
14:25-14:45 A Wide Dynamic Range CMOS Image Sensor with Resistance to High
Temperatures
Koichi Mizobuchi1, Satoru Adachi1, Tomokazu Yamashita1, Seiichiro Okamura1,Hiromichi Oshikubo1, Nana Akahane2 and Shigetoshi Sugawa2 (1DISP Development, Texas Instruments Japan, Inashiki, Japan, 2Gradute School of Engineering, Tohoku University, Sendai, Japan)
14:45-15:05 A 121.8dB Dynamic Range CMOS Image Sensor using Pixel-Variation-Free
Midpoint Potential Drive and Overlapping Multiple Exposures
Yusuke Oike, Atsushi Toda, Tadayuki Taura, Akihiko Kato, Hiroki Sato,
Masanori Kasai, and Tadakuni Narabu (Sony Corporation, Atsugi,
Japan)
15:05-15:25 A High Dynamic Range Digital Linlog CMOS Image Sensor Architecture
Based on Event Readout of Pixels and Suitable for Low Voltage
Operation
Alexandre Guilvard1,2, Pierre Magnan1,Josep Segura2, Philippe Martin-Gonthier1 (1Supaero, Toulouse, France; 2STMicroelectronics, Crolles, France)
15:25-15:45
Coffee Break

 

Session 05
Discussion Session – III Session
Chair: Nobukazu Teranishi
15:45-16:25 Performance of Solid-state Image Sensors in Medical X-Ray
Applications
Inge M. Peters (Dalsa Professional Imaging, Eindhoven, The Netherlands)
   
Session 06 16:25-17:30
Poster Papers – I Session Chair: Dan Mcgrath
P1 Highlight Scene FPN on Shared Pixels and a Reduction Technique Takashi Watanabe, Katsuji Kimura, Masamitsu Taki, Mitsuru Homma,
Shoko Daikoku, and Tetsuya Fujimoto, and Kiyotoshi Misawa (Imaging and
Sensing Module Division,
LSI Group, Sharp Corporation, Japan)
P2 ¼ Inch 2Mega CMOS Image Sensor Fabrication Se Jung Oh*, Keun Hyuk Lim**, Jae Young Rim*, Chan Ki Kim*, An Sik
Choi*, Do Young Lee* (* SiliconFile Technologies Inc.
Seoul, Korea, **DongBu Electronics, Korea)
P3 Implementing a CMOS Image Sensor Noise Performance Model Keith Findlater1, Ryan Gow2, David Renshaw3, Lindsay Grant4, John Hart4, Stuart McLeod4, Robert Nicol4(1Gigle Semiconductor, Edinburgh, UK;
2University of Oxford, Oxford, UK;3University of Edinburgh, Edinburgh,
UK; 4STMicroelectronics Imaging Division, Edinburgh, UK)
P4 Noise Analysis of a CCD / CMOS Hybrid Low Light Level Image Sensor Boyd Fowler and Chiao Liu (Fairchild Imaging, Mipitas, USA)
P5 A 2.3e- Read Noise 1.3Mpixel CMOS Image Sensor with Per-Column
Amplifier
Kwang-Bo Cho, Chiajen Lee, Siri Eikedal, Hai Yan, Taehee Cho,
Tien-Min Miao, Jason Song, Christopher Zeleznik, Alexander Mokhnatyuk,
and Sandor Barna (Micron Technology Inc, Pasadena, USA)
P6 Continuous Time Column Parallel Readout for CMOS Image Sensor G.G. Storm, M.D. Purcell, A. Laflaquiere, R.A. Elliott, L.A. Grant, T.Lule1, F. Mutze1, M.Sommer1 (STMicroelectronics, Edinburgh, UK,1STMicroelectronics, Imaging Division, Grenoble, France)
P7 Analysis of Source Follower Random Telegraph Signal Using nMOS and
pMOS Array TEG
K. Abe1, S. Sugawa1, R. Kuroda1,4, S. Watabe1, N. Miyamoto2, A. Teramoto2, T. Ohmi2, Y. Kamata3 and K. Shibusawa3 (1Graduate School of Engr., Tohoku University, Sendai, Japan; 2New Industry Creation Hatchery Center, Tohuku University, Japan; 3Miyagi Oki Electric Co, Japan; 4JSPS Research Fellow)
P8 Consideration of Dark Current Generation at The Transfer Channel
Region in the Solid State Image Sensor
Yoshihisa Kunimi1 and Bedabrata Pain
(1Asahi Kasei EMD Corp)
P9 Gamma-Ray Irradiation Effects on CMOS Image Sensors in Deep
Sub-Micron Technology
Padmakumar R. Rao1, Xinyang Wang1, Adri J. Mierop2, and Albert J.P. Theuwissen1,2 (1Delft University of Technology, Delft, The Netherlands,2DALSA, Eindhoven, The Netherlands)
P10 1.4 Gpix/s, 2.9Mpix CMOS Image Sensor for Readout of Holographic Data
Memory
Roel Aerts, Steve Domer, Judy Fong, Kellie Vanda, Ray Rubacha,
Brannon Harris and Tomas Geurts (Cypress Semiconductor, Mechelen,
Belgium)
P11 A High Speed 4 Megapixel Digital CMOS Sensor A. Krymski (Alexima, Pasadena, USA)
P12 Comparison of Global Shutter Pixels for CMOS Image Sensors Stefan Lauxtermann, Adam Lee, John Stevens, and Atul Joshi (Teledyne
Imaging Sensors,
Camarillo, USA)
P13 Dynamic Range Extension of CMOS Imager With Linear Response by Hybrid
Use of Active and Passive Pixel Readouts
Keiichiro Kagawa1, Yudai Adachi1, Yugo Nose2, Kuniyuki Tani2, Atsushi Wada2, Masahiro Nunoshita1, and Jun Ohta1 (1Graduate School of Materials Science, Nara Institute of Science and
Tech., Ikoma, Japan;
2Sanyo Electric Co., Japan)
P14 A Wide Dynamic Range CMOS Image Sensor with Dual Capture using
Floating Diffusion Capacitor
Dongsoo Kim, Dongmyoung Lee, Seunghyun Lim, and Gunhee Han (Dept. of
Electrical Engineering, Yonsei University, Seoul, Korea)
P15 Analog Readout Circuitry for Wide-Dynamic Range CMOS Image Sensors Jose Tejada, Hirokazu Sawada, Nana Akahane*, and Shigetoshi Sugawa*
(
Texas Instruments, Japan; *Tohoku
University, Sendai, Japan)
P16 Monolithic Active Pixel Matrix with Binary Counters in an SOI Process Gregorz Deptuch1, and Raymond Yarem2 (1Brookhaven National Lab, Upton,USA; 2Fermi National Accelerator Laboratory, Batavia, USA)
P17 Timepix, a 65k programmable pixel readout chip for arrival time,
energy and/or event counting measurements
X. Llopart, R. Ballabriga, M.Campbell, E.H.M. Heijne, L. Tlustos and
W. Wong (
CERN, Geneva, Switzerland)
P18 Dichromatic self timed spectral measurement circuit with digital
output in vanilla CMOS
Daniel Fasnacht, and Tobi Delbruck (Inst. of Neuroinformatics UNIETH,Zurich, Switzerland)
P19 High Speed 2D Motion Detection Image sensor with velocity Filtering
Function
Toshiyuki Sugita, Kenichi Nakayama, Takashi Yoshida, Takayuki
Hamamoto, and Kazuya Kodama* (Tokyo University of Science, Tokyo,
Japan; * National Institute of Informatics, Tokyo, Japan)
P20 Towards Smarter Ranging Pixels with High Dynamic Range:
Sensitivity-Tuning of Current Assisted Photonic Demodulators
Ward van der Tempel, Daniel Van Nieuwenhove, Riemer Grootjans, and
Maarten Kuijk (Department of Electronics and Informatics (ETRO), Vrije
Universiteit Brussel,
Brussel, Belgium)
18:15-20:15 Dinner
   
Session 07 19:50-20:15
Poster Papers – II Session Chair: Hidekazu Takahashi
P21 Trends in CMOS Imager Technology for Low Power and Low Cost
Applications
Don Scansen and Jochonia Nxumalo (Semiconductor Insights Inc, Kanata,Canada)
P22 Applied Mathematics to Simplify Imager and Camera Evaluation Peter Centen (Grassvalley, Breda, The Netherlands)
P23 A custom CMOS imager for wavelength-multiplexed indoor optical LANs Tomoya Miyawaki, Keiichiro Kagawa, Itsuki Nagahata, Masahiro
Nunoshita, and Jun Ohta (Graduate School of Materials Science, Nara
Institute of Science and Technology, Ikoma, Japan)
P24 An Optical/Potential/Voltammetric Multifunctional CMOS Image Sensor
for On-Chip Biomolecular/Neural Analytical Applications
T. Tokuda, S. Sato, K. Kagawa, M. Nunoshita, and J. Ohta (Graduate
School of Material Science, Nara Institute of Science and Technology,
Ikoma, Japan)
P25 Design and Packaging of an Implantable CMOS Neural Imaging and
Interface Device
D. C. Ng1, T. Nakagawa1, T. Mizuno1, T. Tokuda1, M. Nunoshita1,H. Tamura2, Y. Ishikawa2, S. Shiosaka2, and J. Ohta1 (1Graduate School of Materials Science, 2Graduate School of Biological Sciences, Nara Institute of Science and
Technology, Ikoma, Japan)
P26 An Efficient Capacity and Image Lag Simulation Method of CMOS Image
Sensor
Kee-Hyun Paik, Jongcheol Shin*, Seok-Ha Lee*, Chang-Rok Moon*,
Chang-Hyo Koo, Keun-Ho Lee, Duckhyung Lee*,
Young-Kwan Park, and Moon-Hyun Yoo (CAE
Team, Technology Development Team*, Memory Division, Samsung
Electronics Co.,
Hwasung City, Korea)
P27 3-D Wave Optical Simulation of Light Wave-guide Structures by LBEM Hideki Mutoh and Shigetoshi Sugawa* (Link Research Corporation, Tokyo,Japan; *Graduate School of Engineering, Tohoku University, Aramaki, Japan)
Session 08
Discussion Session – IV Session Chair: Eric Fossum
8:30-9:10 What Camera Manufacturers Want Sunita A. Mathur, Michael A. Okincha, Michael D. Walters (Vistapoint
Technologies,
San Jose, USA)
   
Session 09
Back-illuminated Imagers Session Chair: Pierre Magnan
9:10-9:30 Radiometric Performance Enhancement of Hybrid and Monolithic Backside
Illuminated CMOS APS for Space-borne Imaging
J. Bogaerts1, K. De Munck1, P. De Moor1, D. Sabuncuoglu Tezcan1, I. Ficai Veltroni2, G. Lepage3, C. Van Hoof1 (1IMEC, Heverlee, Belgium; 2Galileo Avionica, Campi Bisenzio, Italy; 3Cypress, Mechelen, Belgium)
9:30-9:50 Back-Illuminated, Three-Dimensionally Integrated CMOS Imager with
In-Pixel CDS
V. Suntharalingam, G. Prigozhin, R. D’Onofrio, S. Kissel, and M.
Bautz (MIT
Lincoln Laboratory, Lexington, USA)
9:50-10:10 Wafer-Level Thinned CMOS Imagers in a Bulk-CMOS Technology Bedabrata Pain, Chao Sun, Paula Vo, Bruce Hancock, Thomas J.
Cunningham, Chris Wrigley, Risaku Toda, Victor White, Amrita Banerjee*
and Durgmadhab Misra* (Jet Propulsion Laboratory, Pasadena, USA; *Dept
of ECE, New Jersey Institute of Technology, Newark, USA)
10:10-10:40 Coffee Break
   
Session 10 10:40-11:10
Poster Papers – III Session Chair:
Bart Dierickx
P28 Color filter array with sparse color sampling crosses for mobile
phone image sensors
Gang Luo (Harvard University, USA)
P29 Crosstalk, Color Tint and Shading Correction for Small Pixel Size
Image Sensor
Alexander Getman, Timofei Uvarov, YongIn Han, Bumsuk Kim, JungChak
Ahn, YongHee Lee (Samsung Electronics Ltd, Yongin-City, Korea)
P30 A Monolithic 111-M Pixel High Speed, High Resolution CCD Richard Bredthauer, Greg Bredthauer, and Kasey Boggs (Semiconductor
Technology Associates, Inc.,
San Juan Capistrano, USA)
P31 Sensor Development for the Large Synoptic Survey Telescope P. O’Connor, V. Radeka, and P. Takacs (Brookhaven National
Laboratory, 
Upton, USA)
P32 Lawrence Berkeley National Laboratory 2Kx4K High-resistivity CCDs for
the Keck 10-meter Telescope Low Resolution Imaging Spectrograph
R.J. Stover, M. Wei, W.E. Brown, and L.B. Robinson (UCO/Lick Observatory,University of California Santa Cruz, USA)
P33 High Performance Large Format UV/optical/near IR Detector Arrays Shouleh Nikzad, Michael E. Hoenk, Jordana Blacksberg, Todd J. Jones,
and Thomas J. Cunningham (Jet Propulsion Laboratory, Pasadena,
USA)
P34 Highly Sensitive VGA FEA-HARP Image Sensor N. Egami1, M. Nanba1, Y. Honda1, Y. Hirano1, K. Miyakawa1, Y. Ookawa1, T. Watabe1, S. Okazaki1, K. Miya2, K. Nakamura2, T. Niiyama2, M. Taniguchi2, S. Itoh2, and A. Kobayashi3 (1NHK Science & Technical Research Labs, Tokyo, Japan; 2 Futaba Co., Chiba, Japan; 3Hamamatsu photonics K.K., Japan)
P35 A 1½D CMOS Active Pixel Sensor for X-ray imaging R.Turchettaa, A. Fanta, P. Gasioreka, C. Esbrandb, J. A. Griffithsb, M. G. Metaxasb, G. J. Royleb, R. Spellerb, C. Venanzib, P. F. van der Steltc, H. Verheijc, G. Lic, S. Theodoridisd, H. Georgioud, D. Cavourase, G. Hallf, M. Noyf, J. Jonesf, J. Leaverf, D. Machinf, S. Greenwoodf, M. Khaleeqf, H. Schulerudg, J. M. Østbyg, F. Triantish, A. Asimidish, D.Bolanakish, N. Manthosh, R. Longoi, A. Bergamaschii (aRutherford Appleton Laboratory, Chilton, UK;bDepartment of Medical Physics & Bioengineering, University
College London, UK;
cAcademic Centre for Dentistry, Vrije Universiteit & University of
Amsterdam, The Netherlands;
dDepartment of Informatics & Telecommunications, University of
Athens, Greece;
eMedical Image and Signal Processing Laboratory, Department of Medical
Instrument Technology, Technological Education Institution of Athens,
Greece;
fHigh Energy Physics Group, Department of Physics, Imperial College,
London, U.K;
gDivision of Electronics and Cybernetics, SINTEF, Oslo, Norway; hDepartment of Physics, University of Ioannina, Greece; iDepartment of Physics, University of Trieste, Italy)
P36 SOI-based Monolithic Imaging Technology for Scientific Applications Bedabrata Pain, Chao Sun, Xinyu Zheng, Suresh Seshadri, and Thomas J.
Cunningham (Jet Propulsion Laboratory, Pasadena, USA)
P37 A 10b Column-wise Two-Stage Single-Slope ADC for High-Speed CMOS
Image Sensor
Jeonghwan Lee, Seunghyun Lim, and Gunhee Han (Dept. of Electrical
Engineering,
Yonsei University, Seoul, Korea)
P38 Pixel-Level A/D Conversion:  Comparison of Two Charge Packets
Counting Techniques
Arnaud Peizerat, Marc Arques, Patrick Villard, Jean-Luc Martin
(LETA-
CEA,Grenoble, France)
   
Session 11
Advanced Fabrication Techniques Session Chair: Jerry
Hynecek
11:10-11:30 Three-Dimensional Integration Technology for Advanced Focal Planes Craig Keast, Brian Aull, Jim Burns, Chenson Chen, Jeff Knecht, Brian
Tyrrell, Keith Warner, Bruce Wheeler, Vyshi Suntharalingam, Peter
Wyatt, and Donna Yost (Lincoln Laboratory, Massachusetts Institute of
Technology, Lexington, USA)
11:30-11:50 High Sensitivity of Dielectric films Structure for Advanced CMOS
Image Sensor Technology
Chung-Wei Chang1,2, Shou-Gwo Wuu1, Dun-Nian Yaung1, Chien-Hsien Tseng1, Han-Chi Liu1, David Yen1, Yi-Jiun Lin1, Chun-Ming Su1, Chun-Yao Ko1, C.Y. Yu1, C.H. Lo1, F.J.Hsiu1, C.S.Tsai1, Chung S. Wang1, Mingo Liu1, Chrong-Jung Lin2, Ya-Chin King2 (1Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C.; 2Department of Electrical Engineering, National Tsing Hua University,
Taiwan, R.O.C.)
11:50-12:10 Reliability of CMOS image sensor with polymer lightpipe J. Gambino, K. Ackerson, B. Guthrie, B. Leidy, W. Abadeer, S.
Mongeon, D. Meatyard, J. Adkisson, R. J. Rassel, J. Ellis-Monaghan,
and M. Jaffe (
IBMMicoelectronics, Essex Junction, USA)
12:10-12:16 Integrated Processes for Detector Back Illumination Richard C. Westhoff, Robert K. Reich, Andrew H. Loomis, and James A.
Gregory (MIT
Lincoln laboratory, Lexington, USA)
12:20-17:30 Lunch Pick-up + Afternoon Activities
17:30-19:00 Poster Viewing (incl. Hors D’oeuvres)
19:00-21:00 Dinner
   
Session 12
Noise/Dark Current in Image Sensors Session Chair:
Junichi Nakamura
8:30-8:50 Modeling of the Temporal Pixel to Pixel Noise of CMOS Image Sensors Cédric Leyris, François Roy, Didier Hérault, and Mathieu Marin
(Stmicroelectronics,
Crolles, France)
8:50-9:10 Characterization of the Buried Channel n-MOST Source Followers in
CMOS image sensors
Xinyang Wang, Padmakumar R. Rao, and Albert J.P. Theuwissen (DelftUniversity of Technology, Delft, The Netherlands)
9:10-9:30 Column Parallel Signal Processing Techniques for Reducing Thermal and
Random Telegraph Noises in CMOS Image Sensors
Shoji Kawahito and Nobuhiro Kawai (Research Institute of
Electronics,
Shizuoka University, Hamamatsu, Japan)
9:30-9:36 Optimization of Random Telegraph Noise Non Uniformity in a CMOS Pixel
with a pinned-photodiode
Assaf Lahav, Dmitry Veinger, Amos Fenigstein, and Amit Shiwalkar*
(Tower Semiconductor Ltd,
Israel; *Biomorphic VLSI Inc, USA)
9:36-9:42 Twinkling Pixels: Random Telegraph Signals at Reset Gate Edge Bedabrata Pain, Thomas J. Cunningham, Bruce Hancock, Chao Sun, and
Chris Wrigley (Jet Propulsion Lab., California Inst. of Techonology,
Pasadena, USA)
9:42-9:48 Evaluation of a Small Negative Transfer Gate Bias on the Performance
of 4T CMOS Image Sensor Pixels.
Hyungjun Han, Hongjoo Park, Parker Altice, Woonil Choi, Younsub Lim,
Sangjoo Lee, Seok Kang, Jaeyeong.kim, Smith Yoon and Jerry Hynecek
(Magnachip Semiconductor Ltd, Cheongju, Korea)
9:48-9:54 Some Thoughts on Diffusion Dark Current M.M. Blouke (Ball Aerospace & Technologies Corp, Boulder, USA)
9.54-10:30 Coffee break
   

 

Session 13
Discussion paper – VI Session Chair: Bedabrata Pain
10:30-11:10 Will Avalanche Photodiode Arrays Ever Reach 1 Megapixel?

Edoardo Charbon (Swiss Federal Inst. of Technology, Lausanne, Switzerland)

   
Session 14
Photon Counting/Time Of Flight Image Sensors Session
Chair: Felix Lustenberger
11:10-11:30 A CMOS Single-Photon Avalanche Diode Sensor for Fluorescence Lifetime
Imaging
Fausto Borghetti, Daniel Mosconi, Lucio Pancheri, and David Stoppa
(FBK-irst Centre for Scientific and Technological Research, Trento,
Italy)
11:30-11:50 A TOF Range Image Sensor with an Ambient Light Charge Drain and Small
Duty-Cycle Light Pulse
Tomonari Sawada1, Shoji Kawahito1, Masakatsu Nakayama1, Kana Ito1, Izhal Abdul Halin1, Mitsuru Homma2, Takeo Ushinaga2, and Yasunari Maeda3(1Shizuoka University, Hamamatsu, Japan; 2Sharp Corporation, Nara, Japan;3Suzuki Motor Corporation, Hamamatsu, Japan)
11:50-11:56 Dynamic Quenching for Single Photon Avalanche Diode Arrays Justin Richardson1,2, Robert K. Henderson1, David Renshaw1 (1The Universityof Edinburgh, Institute for Integrated Micro and Nano Systems, Edinburgh, U.K; 2STMicroelectronics Imaging Division, Edinburgh, UK)
11:56-12:02 A Compact Low-Voltage Electron Bombarded Array Shouleh. Nikzad, Todd.J. Jones, Michael.E. Hoenk, Chris. Martin,
Steve. Kaye, and Patrick. Morrissey* (Jet Propulsion Laboratory,
Pasadena, USA; *California Institute of Technology, Pasadena, USA)
12:05-13:40 Lunch
   
Session 15
Discussion Session – V Session Chair: Boyd Fowler
13:40-14:20 Color Processing Pipeline Albert J. P. Theuwissen (DALSA, The Netherlands)
Session 16
Alternative On-Chip Color Capture Approaches Session
Chair: Shoji Kawahito
14:20-14:40 High Sensitivity Color CMOS Image Sensor with White-RGB Color Filter
Array and a Novel Color Separation Process Using Edge Detection
Hiroto Honda1, Yoshinori Iida1, and Yoshitaka Egawa2 (1Corporate Research and Development Center, Toshiba Corp., Japan; 2Semiconductor Company, Toshiba Corp, Japan)
14:40-15:00 IR/Color Composite Image Sensor with VIPS (Vertically Integrated
Photodiode Structure)
Jeong-Ho Lyu, Seok Choi1, Jae Heon Choi, Jung Hyun Nam1, and Jin Bok Jung(1Miru Data System Co., Suwon, Korea; Maru LSI Co., Suwon, Korea)
15:00-15:20 Gr Gb difference in 3M CMOS Image Sensor with 1.75μm pixel Bumsuk Kim, Yoonho Jang, Kyoungsik Moon, Eun-Gyu Lee, Alexander
Getman, JungChak Ahn, and YongHee Lee (Samsung Electronics Co. Ltd,
Yongin-City, Korea)
15:20-15:40 CMOS Color Image Sensor with Overlaid Organic Photoconductive Layers:
Depression of Dark Current
Shunji Takada, Mikio Ihama, and Masafumi Inuiya (Fujifilm Corp, Kanagawa,Japan)
15:40-15:46 A Buried Triple Junction Self-Reset Pixel in a 0.35μm High Voltage
CMOS Process
Thomas Ross, Robert K. Henderson, Bruce Rae, and David Renshaw (Instituteof Micro and Nano Systems, Univ of Edinburgh, Edinburgh, UK)
15:46-16:20 Coffee break
   
Session 17
Integrated Image Sensors on a chip (ISOC) Session
Chair: Tetsuo Nomoto
16:20-16:40 An SXGA CMOS Image Sensor with 8 Gbps LVDS Serial Link T. Cools1, P. Deruytere1, J. De Bondt1, R. Sankhe1, T. Geurts1, K. Takada2, T. Yamamoto2 (1Cypress Semiconductor, Mechelen, Belgium; 2NED, Osaka,Japan)
16:40-17:00 A 600×600 Pixel, 500 FPS CMOS Image Sensor with a 4.4 μm Pinned
Photodiode 5-Transistor Global Shutter Pixel
I. Takayanagi, Y. Mo*, H. Ando, K. Kawamura, N. Yoshimura, K. Kimura,
T. Otaka, S. Matsuo, T. Suzuki, F. Brady**, and J. Nakamura (Micron
Japan, Tokyo, Japan, * Micron Technology, Inc., Pasadena, USA, **
Micron Technology, Inc., Boise, USA)
17:00-17:20 2Mpix 2.6 μm Pixel Size Image Sensor in AIC Technology T. Lulé, F. Mütze, M. Sommer, J. Prima1, F. Roy1, B. Glück1, D. Thomas1, R. Nicol2 (STMicroelectronics, Imaging Division, Crolles, France;1STMicroelectronics, France; 2STMicroelectronics, Edinburgh, UK)
17:20-17:40 52 Mega-pixel APS-H-size CMOS Image Sensor for Super High Resolution
Image Capturing
Masaaki Iwane, Takashi Matsuda, Takashi Sugai, Koichi Tazoe, Takashi
Okagawa, Toshiaki Ono, Takanori Watanabe, Katsuhisa Ogawa, Hidekazu
Takahashi, and Shunsuke Inoue (Canon Inc, Ayase-shi, Japan)
17:40-18:00 A CMOS Image Sensor for Earth Observation with High Efficiency
Snapshot Shutter
Gérald Lepage1, Alex Materne2, Christophe Renard3 (1Cypress – FillFactory,Mechelen, Belgium; 2CNES, Toulouse, France; 3Thales Alenia Space, CannesLa Bocca, France)
18:00-18:06 Variability Limits the Advantage of Photo Diode’s Zero Bias Operation Bart Dierickx (Caeleste, Antwerp, Belgium; IMEC, LeuvenBelgium)
18:45-21:00 Banquet + Walter Kosonocky Award Presentation
   
Session 18
Image Sensors with Super-Small Pixels – II Session
Chair: Robert Henderson
9:00-9:20 Super Small, Sub 2µm Pixels For Novel CMOS Image Sensors G. Agranov, R. Mauritzson; S. Barna, J. Ladd, J. Jiang, A.
Dokoutchaev, and X. Fan (Micron Technology Inc, Boise, USA)
9:20-9:40 Stratified Photodiode a New Concept for Small Size High Performance
CMOS Image Sensor Pixels.
Younsub Lim, Kyunglak Lee, Heejeong Hong, Jaeyeong Kim, Seunghoon Sa,
Juil Lee, Daebyung Kim and Jerry Hynecek (MagnaChip Semiconductor
Ltd., Cheongju, Korea)
9:40-10:00 Improved Design of 1T Charge-Modulation Pixel Structure for
Small-Size and Low-Dark-Current Achievements
Arnaud Tournier1,2, François Roy1, Guo-Neng Lu2, Benoît Deschamps1(1STMicroelectronics, Crolles, France; 2Université de Lyon, Institut des Nanotechnologies de Lyon, Villeurbanne, France)
10:00-10:20 Coffee break
   
Session 19
Scientific Image Sensors Session Chair: Craig Keast
10:20-10:40 A 28M 43 cm2 Full-Frame CCD Imager for Medical and Scientific
Applications
Jan T. Bosiers, Bart Dillen and Louis Meessen (DALSA Professional
Imaging,
Eindhoven, The Netherlands)
10:40-11:00 Orthogonal Transfer Arrays for Wide-Field Adaptive Imaging Barry E. Burke*, John L. Tonry**, Michael J. Cooper*, Peter E. Doherty*, Andrew H. Loomis*, Douglas J. Young*, and Peter
Onaka**

(*MIT Lincoln Laboratory, Lexington, USA , **Institute for Astronomy,
University of Hawaii, Hawaii, USA)
11:00-11:20 High Performance CMOS Image Sensor for Low Light Imaging Xinqiao (Chiao) Liu, Boyd Fowler, Hung Do, Steve Mims, Dan Laxson,
and Brett Frymire (Fairchild Imaging, Milpitas, USA)
11:20-11:26 2.5 μm Pixel Linear CCD Nixon O, Lei Wu, Melanie Ledgerwood, John Nam, and Jonathan Huras
(DALSA Inc,
Waterloo, Canada)
11:26-11:32 Performance of NIR InGaAs Imager Arrays for Science Applications S. Seshadria, D.M. Colea, B. Hancocka, P. Ringolda, C. Peaya, C.Wrigleya, M. Bonatib, M.G. Brownc, M. Schubnellc, G. Rahmerb, D. Guzmanb, D. Figerd, G. Tarlec, R.M. Smithb, and C. Bebeke (aJet Propulsion Lab., USA, bCalifornia Inst. of Tech., USA, cUniv. of Michigan, USA, dRochester Inst. of Tech., USA andeLawrence Berkeley National Lab., Department of Physics, USA)
11:35-11:40 Closing Remarks