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2011 INTERNATIONAL IMAGE SENSOR WORKSHOP

June 8-11, 2011 Hokkaido, Japan

Wednesday, June 8th 2011

Session 1: Small Pixel Sensors I

Session chair: Albert Theuwissen (Harvest Imaging)

08:45-09:05 R1 Pixel Continues to Shrink….Small Pixels for Novel CMOS Image
Sensors

G. Agranov, S. Smith, R. Mauritzson, S, Chieh, U. Boettiger, X. Li,
X. Fan, A. Dokoutchaev, B. Gravelle, H. Lee. W. Qian, R. Johnson. Aptina
LLC, USA 

09:05-09:25 R2 A Review of the 1.4 mm Pixel Generation 

R.Fontaine. Chipworks, Canada

09:25-09:45 R3 SNR Performance Comparison of 1.4mm Pixel : FSI, Light-guide, and
BSI 

Kyungho Lee, JungChak Ahn, Bumsuk Kim, Taesub Jung, Sangjoo Lee,
Moosup Lim, Chang-Rok Moon, Sangil Jung, Junetaeg Lee, Hongki Kim,
Duckhyung Lee, Hiroshige Goto, Chi-Young Choi, and Yun-Tae Lee.
Samsung Electronics Co., Ltd., Korea

09:45-10:05 R5 Pixel-to-Pixel Isolation by Deep Trench Technology: Application
to CMOS Image Sensor

A. Tournier, F. Leverd, L. Favennec, C. Perrot, L. Pinzelli, M.
Gatefait, N.Cherault, D. JeanJean, J.-P. Carrere, F. Hirigoyen, L. Grant, F.
Roy.
STMicroelectronics, France

Session 2: Small Pixel Sensors II

Session chair: Jung Chak Ahn (Samsung)

10:25-10:45 R6 Quantum Efficiency Simulation Using Transport Equations 

William Gazeley and Dan McGrath. Aptina Imaging, USA

10:45-11:05 R7 Crosstalk Metrics and the Characterization of 1.1μ-pixel CIS

C. Chao, H.Y. Tu, K.Y. Chou, P.S. Chou, F.L. Hsueh, W.H. Wei, R.J.
Lin, and B.C. Hseih. Taiwan Semiconductor Manufacturing Company,
Taiwan, ROC

11:05-11:25 R8 Back Illuminated Vertically Pinned Photodiode with in Depth
Charge Storage

J. Michelot1,2, F. Roy1, J. Prima1,
C. Augier1, F. Barbier1, S. Ricq1, P.
Boulenc1,       Z. Essa1, L.
Pinzelli1, H. Leininger1, M.
Gatefait1, J.-E.
Broquin2. 1STMicroelectronics, France;
2IMEP-LAHC, France

11:25-11:45 R9 The Mass Production of Second Generation 65 nm BSI CMOS Image
Sensors

H. Rhodes, S. Manabe, V.C.Venezia, K. C. Ku, Z. Lin,  P. Fu, D. Tai,
A. Shah, R. Liu, R. Yang, P. Matagne, S. Hu.  OmniVision Technologies,
Inc.,USA

Session 3: Invited Presentation and Process Technology

Session chair: Shou-Gwo Wuu (TSMC)

13:15-13:45 I1 Invited Presentation-I

Technology of Color Filter Materials for Image Sensor

Hiroshi Taguchi, Masashi Enokido. FUJIFILM Electronic Materials Co.,
Ltd.,Japan

13:45-14:05 R11 Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode
with Atomically Flat Si Surface

Rihito Kuroda, Taiki Nakazawa, Katsuhiko Hanzawa and Shigetoshi
Sugawa. Tohoku University, Japan

14:05-14:20 R12 High Performance and High Yield Junction Formation with Full
Device Exposure Laser Thermal Annealing

K. Huet1, C. Boniface1, J. Venturini1, Z. Ait
Fqir Ali-Guerry2,3, R. Beneyton2, M.Marty², D.
Dutartre2, F. Roy2. 1EXCICO, France;
2STMicroelectronics, France;3Institut des
Nanotechnologies; France

14:20-14:35 R13 A Highly Manufacturable Backside Illumination Technology for CMOS
Image Sensor

Yunki Lee, Chang-rok Moon, Doowon Kwon, Jinho Kim, Byoung jun Park,
Yuyeon Yu, Gilsang Yoo, Sanghoon Kim, Seunghoon Shin, Taehun Lee and
Duckhyung Lee. Samsung Electronics Co. LTD., Korea

Session 4: Poster Presentations

Session chair: Jun Ohta (Nara Institute of Science and Technology)
Lindsay Grant (ST Microelectronics)

P1 Performance Improvements of Polarization Analyzing CMOS Image
Sensor Using Multiple Pixel Array Architecture and 65nm Standard
CMOS Process

Takashi TOKUDA, Hitoshi MATSUOKA, Sanshiro SHISHIDO, Toshihiko NODA,
Kiyotaka SASAGAWA and Jun OHTA. Nara Institute of Science and
Technology, Japan

P2 High Resolution CCD Polarization Imaging Sensor

Viktor Gruev and Tim York. Washington University, USA

P4 A 2/3-type 2.3-Mega Pixel IT-CCD for HD 1080p60

Takuya Asano, Yoshinori Horikawa, Kazuaki Hirata, Ryoichi
Nagayoshi,                      Akira Tsukamoto. Panasonic
Corporation, Japan

P5 A High Speed CMOS Dual Line Scan Imager for Industrial
Applications

P. Donegan, L. Korthout, M. Moser, V. Bommu, Y. Lin, A. Kumar,
F. Feng,                   D. Marchesan, D.Verbugt, P.
Albertini, W.de Haan, S. Xie, D. Atos, W. Maes,               
                    J. de eulmeester, M. Sonder, E. Fox.
Teledyne DALSA Corporation, Canada

P6 Ageing Effects on Image Sensors: Neutron Irradiation
Studies on Wafer and Packaged Devices

Gayathri G. Nampoothiri1, Albert J. P.
Theuwissen1, 2. 1Delft University of Technology, the Netherlands; 2Harvest Imaging,
Belgium

P7 Analog Multiplex Bus Readout Method to Reduce Ghosting
Image Artifact in CMOS Image Sensors

Rahul Sankhe, Raja Reddy P. ON Semiconductor Technology
India Pvt. Ltd., India

P8 Study of Image Artifacts Caused by the Single-Ended
CTA Column Comparator Used in CMOS Imagers

M.D. Purcell, G.G. Storm, J. K Moore, M. Wigley, D.
Tolmie. STMicroelectronics, U

P9 Column-Parallel Circuits with Digital Correlated
Multiple Sampling for Low Noise CMOS Image
Sensors

Yue Chen1, Yang Xu1, Adri J.
Mierop2 and Albert J.P.
Theuwissen1,3. 1Delft University
of Technology, the Netherlands; 2Teledyne
DALSA B.V., the Netherlands; 3Harvest
Imaging, Belgium

P10 Post-ADC Digital Filtering in the CIS with the
Column Single Slope ADC

Toshinori Otaka, Takumi Hiraga and Takayuki Hamamoto.
Tokyo University of Science, Japan

P12 Prototype Line‐Scan Device with 12‐bit Charge
Domain Column‐Parallel Successive Approximation
ADCLaurens Korthout, Daniel Verbugt, Paul Donegan,
Adri Mierop. Teledyne DALSA Professional Imaging, The Netherland
P13 Analysis of Front‐end Multiplexing for
Column Parallel Image Sensors

Daniel Van Blerkom, Steve Huang, Loc Truong and
Barmak Mansoorian. Forza Silicon Corporation, USA

P15 Accurate Capacitance and RC Extraction
Software Tool for Pixel, Sensor, and
Precision Analog Designs

M. Ershov1, M.Cadjan1,
Y.Feinberg1, X.Li2,
G.C.Wan2, and
G.Agranov2. 1Silicon
Frontline Technology, USA; 2Aptina
Imaging, USA

P16 Single-Photon Avalanche Diodes in
sub-100nm Standard CMOS Technologies

Mohammad Azim Karami, Hyung-June Yoon, and
Edoardo Charbon. Delft University of
Technology, Netherlands

P17 An Infra-Red Sensitive, Low Noise,
Single-Photon Avalanche Diode in 90nm
CMOS

Eric A. G. Webster1, Justin A.
Richardson2, Lindsay A.
Grant3, David
Renshaw1, Robert K.
Henderson1.
1University of Edinburgh, UK;
2University of Edinburgh and
Dialog Semiconductor; 3ST
Microelectronics, UK

P19 Enhanced X-RAY CMOS Sensor Panel
for Radio and Fluoro Application
Using a Low Noise Charge Amplifier
Pixel with a Partially Pinned PD

Assaf Lahav1, Tomer Leitner,
Raz Reshef & Amos Fenigstein.
1Tower Semiconductor LTD.,
Israel

P20 L²CMOS Image Sensor for Low Light
Vision

Pierre Fereyre, Frédéric Devrière,
Stéphane Gesset, Marie Guillon,
Thierry Ligozat, Frédéric Mayer,
Gareth Powell, Vincent Prevost,
Frédéric Ramus, Olivier Seignol. e2v
semiconductors, France

P21 Color Channel Weights in a
Noise Evaluation

Samu Koskinen, Eero Tuulos, Juha
Alakarhu. Nokia, Finland

P22 Design and Preliminary
Evaluation of CMOS Image
Sensor with Pseudorandom Pixel
Placement

Junichi Akita, Yui Maeda, Akio
Kitagawa. Kanazawa University,
Japan

P24 Photo-Sensitive Area
Modulation Pixel for 3D
Real-Time CCD Imager

Y. Hashimoto, F. Kurihara, K.
Murakami, K. Imai, K.
Taniguchi1.
Matsushita Electric Works,
Ltd.,Japan; 1Osaka
University, Japan

P25 CMOS Image Sensor for 3-D
Range Map Acquisition
Using Time Encoded 2-D
Structured Pattern

Hiroki Yabe, Makoto Ikeda.
University of Tokyo, Japan

P27 An Integration Time
Prediction Based
Algorithm for Wide
Dynamic Range 3D-Stacked
Image Sensors

Adi Xhakoni1,
David San Segundo
Bello2, Koen De
Munck2,                                        
Padmakumar Ramachandra
Rao2, Piet De
Moor2 and Georges
Gielen1.
1K.U.Leuven,
Belgium; 2IMEC,
Belgium

P28 A QCIF 145dB Imager
For Focal Plane
Processor Chips Using
a Tone Mapping
Technique in Standard
0.35μm CMOS
Technology

S. Vargas-Sierra, G.
Liñán-Cembrano, A.
Rodríguez-Vázquez. CSIC
and Universidad de
Sevilla, Spain

P29 Temperature
Compensation Scheme
for Logarithmic CMOS
Image Sensor

Hakim Zimouche, Hawraa
Amhaz and Gilles Sicard.
CNRS, France

P30 Smart Readout
Technique based on
Temporal
Redundancies
Suppression Designed
for Logarithmic CMOS
Image Sensor 

Hawraa AMHAZ, Hakim ZIMOUCHE and Gilles SICARD. CNRS, France

P31 Backside
Illuminated Hybrid
FPA Achieving Low
Cross-Talk
Combined with High
QE

Koen De Munck,
Padmakumar Rao
Ramachandra, Kiki
Minoglou, Joeri De
Vos,           Deniz
Sabuncuoglu and Piet
De Moor. IMEC,
Belgium

P32 Backside
Illuminated CMOS
Snapshot Shutter
Imager on 50μm
Thick High
Resistivity
Silicon

Stefan Lauxtermann,
Dirk Leipold. Sensor
Creations., Inc.,
USA

P33 CMOS Image
Sensor with an
Overlaid
Organic
Photoelectric
Conversion
Layer: Optical
Advantages of
Capturing
Slanting Rays
of Light

Mikio Ihama,
Hiroshi Inomata,
Hideki Asano,
Shinji Imai,
Tetsurou
Mitsui,                 
Yuuki Imada,
Masayuki Hayashi,
Takashi Gotou,
Hideyuki Suzuki,
Daigo Sawaki,
Mitsumasa Hamano,
Toshihiro
Nakatani,
Yasuyoshi Mishima.
FUJIFILM
Corporation,
Japan

P34 The
Gigavision
Camera  – A
2Mpixel
Image Sensor
with 0.56μm2
1-T Digital
Pixels

HyungJune Yoon
and Edoardo
Charbon. Delft
University of
Technology, The
Netherlands

P35 Low Noise
High
Dynamic
Range
2.3Mpixel
CMOS Image
Sensor
Capable of
100Hz
Frame Rate
at Full HD
ResolutionPaul Vu, Boyd
Fowler, Steve
Mims, Chiao
Liu, Janusz
Balicki, Hung
Do, Wang Li,
Jeff
Appelbaum.
Fairchild
Imaging, Inc.,
USA
  Thursday June 9th, 2011

Session 05: Time-of-Flight and Time-Resolved Imaging

Session chair: Pierre Magnan (ISAE)

08:30-08:45 R15 Experimental Comparison of Four Different CMOS Pixel Architectures
Used in Indirect Time-of-Flight Distance Measurement Sensors

D. Durini, A. Spickermann, J. Fink, W. Brockherde, A. Grabmaier, B.
J. Hosticka. Fraunhofer Institute for Microelectronic Circuits and
Systems, Germany

08:45-09:05 R16 Time Of Flight Image Sensors in 0.18μm CMOS Technology: a
Comparative Overview of Different Approaches

David Stoppa1, Lucio Pancheri1, Nicola
Massari1, Mattia
Malfatti1,                     Matteo
Perenzoni1, Gianmaria Pedretti1, Gian-Franco
Dalla Betta2. 1Fondazione Bruno Kessler, Italy;
2DISI, University of Trento, Italy

 09:05-09:20 R17 Dark Current Suppression during High Speed Photogate Modulation
for 3D ToF Imaging Pixel

Tae-Yon Lee1, YongJei Lee1, Dong-Ki
Min1, Joonho Lee1, Young-Gu Jin1,
Yoondong Park1, and Chilhee Chung1, Ilia
Ovsiannikov2 and Eric R.
Fossum1,2.1Samsung Electronics, South Korea;
2Samsung Semiconductor Inc., USA

09:20-09:35 R18 Hybrid Back-Side Illuminated Distance Measuring Sensor Array with
Ring Gate Structure

Mitsuhito Mase, Takashi Suzuki, Shigeyuki Nakamura, Michito
Hirayanagi,                Naoto Sakurai, Terumasa Nagano, Atsushi
Ishida, Seiichiro Mizuno                              and Mitsutaka
Takemura. Hamamatsu Photonics K.K.,Japan

09:35-9:50 R20 High‐Speed General Purpose Demodulation Pixels Based on Buried
Photodiodes

Lysandre‐Edouard Bonjour 1,2, Thomas Baechler1, Maher
Kayal 2. 1CSEM SA, Switzerland; 2EPFL
STI IEL GR‐KA, Switzerland

 9:50-10:10 R21 A CMOS Image Sensor with Draining Only Modulation Pixels for
Sub-Nanosecond Time-Resolved Imaging

Shoji Kawahito, Zhuo Li and Keita Yasutomi. Shizuoka University,
Japan

Session 06: Invited Presentation and Various Imager Design Topics

Session chair: Johannes Solhusvik (Aptina Norway)

10:30-11:00 I2 Invited Presentation-II

New Application Areas Made Possible by High Speed Vision

Masatoshi Ishikawa. University of Tokyo, Japan

11:00-11:15 R22 A Multi-Functional Imager for TOF and High Performance Video
Applications Using a Global Shuttered 5mm Cmos Pixel.

Peter Centen1, Juul v.d Heijkant1, Jeroen
Rotte1, Klaas Jan Damstra1, Assaf Lahav2
, Adi Birman2,Steffen Lehr3, Sabine
Roth3, Ruud van Ree1. 1 Grass Valley,
Netherlands; 2 TowerJazz, Israel; 3 Viimagic,
Germany

11:15-11:30 R23 Backside Thinned, 2.5 e-RMS, BSI, 700fps, 1760×1760
Pixels Wave-Front Imager with 88 Parallel LVDS Output Channels

Bart Dierickx1, Benoit Dupont1, Arnaud
Defernez1, Martin Fryer2, Paul
Jorden2, Andrew Walker2, Andrew
Pike2, Paul Jerram2, Jerome
Pratlong2. 1 Caeleste, Belgium;
2 e2v, UK

11:30-11:50 R24 CCD and CMOS Combined, Low Noise and Low Power Dissipation Linear
Image Sensor with Variable Charge Mixing Mode

Makoto Monoi1, Masayuki Ohki3, Yoshihiro
Hayakawa3, Syu Sasaki2 .1 Toshiba
Corporation, Japan; 2 Iwate TOSHIBA electronics, Japan;
3 Toshiba micro-electronics, Japan

11:50-12:05 R25 An Implantable CMOS Image Sensor with Light Guide Array Structure
and Fluorescent Filter

Kiyotaka Sasagawa1,2, Keisuke Ando1, Takuma
Kobayashi1,2, Toshihiko Noda1,2, Takashi
Tokuda1,2, Yumiko Hatanaka1,2, Hideki
Tamura1,2, Sadao Shiosaka1,2,      Jun
Ohta1,2. 1Nara Institute of Science and
Technology, Japan;2Japan Science and Technology Agency,
Japan

12:05-12:20 R26 An Autonomous micro-Digital Sun Sensor Implemented with a CMOS
Image Sensor Achieving 0.004º Resolution @ 21mW

Ning Xie1, Albert J.P. Theuwissen1, 2, Bernhard
Büttgen1, 3. 1Delft University of Technology,
Netherlands; 2Harvest Imaging, Bree, Belgium;
3 MESA Imaging, Switzerland

Session 07: Noise

Session chair: Boyd Fowler (Farichild Imaging)

13:50-14:10 R27 New Source of Random Telegraph Signal in CMOS Image Sensors

V. Goiffon1, P. Magnan1, P.
Martin-Gonthier1, C. Virmontois1, and M.
Gaillardin2.1ISAE, France; 2CEA
DAM-DIF, France

14:10-14:25 R28 Analysis of Blinking Pixels in CCD Imagers with and without
Surface Pinning

Inge Peters, Erik Bogaart*, Erik-Jan Manoury, Adri Mierop,
Jan Bosiers. TELEDYNE DALSA Professional Imaging, the Netherlands;
*ASML, the Netherlands

14:25-14:45 R29 Dark Fixed Pattern Noise Generation by Negative-Bias-Temperature
(NBT) Stress on CMOS Imager Pixel Transfer Gate

Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami.
Toshiba Corporation, Japan

14:45-15:00 R30 5MPix, 30fps CMOS Image Sensor with Very Low Temporal Line Noise

G.G. Storm, M.D. Purcell, J. K Moore, M. Wigley, D. Tolmie, L.A
Grant. STMicroelectronics, UK

15:00-15:15 R31 4T CMOS Image Sensor Pixel Degradation due to X-ray Radiation

Jiaming Tan1, Bernhard Büttgen1 and Albert J.
P. Theuwissen1,2. 1Delft University of
Technology, the Netherlands; 2Harvest Imaging, Belgium

Session 08: Stacked Structures, High Dynamic Range Sensors, and CCDs

Session chair: Koichi Mizobuchi (Olympus Medical Systems)

15:35-15:50 R32 Investigation of Two-Layer Photodetectors for YSNR10 Improvement in
Submicron Pixels

Eric R. Fossum. Samsung Electronics Semiconductor R&D Center,
South Korea and Thayer School of Engineering at Dartmouth, USA

15:50-16:05 R33 A 128 x 96 Pixel Stack-Type Color Image Sensor with B-, G-,
R-sensitive Organic Photoconductive Films

Hokuto Seo1*, Satoshi Aihara1, Toshihisa
Watabe1, Hiroshi Ohtake1,         Toshikatsu
Sakai1, Misao Kubota1, Norifumi
Egami1, Takahiro Hiramatsu2, Tokiyoshi
Matsuda2, Mamoru Furuta2, and Takashi
Hirao2. 1NHK, Japan; 2Kochi
University of Technology, Japan

16:05-16:25 R34 Process Integration Aspects of Back Illuminated CMOS Imagers
Using Smart StackingTM Technology with Best in Class Direct
Bonding

Ruth Shima Edelstein1, Omer Katz1, Becky
Lavi1, Ishai Aberman1,                    Sagee
Rosenthal1, Michal Shadmi1, Shay
Arad1, Nili
Golan1,                             Michal Shach
Caplan1, Morad Massalha1, Chrystelle
Lagahe-Blanchard2,        Laurent Marinier2,
Richard Fontanière2, Arnaud Castex2, Marcel
Broekaart2, Muriel Martinez2, Nathalie
Milhet2, Arnaud Rigny2, Christine
Pelissier2.1TowerJazz, Israel;
2SOITEC, France

16:25-16:40 R35 A 768×576 Logarithmic Image Sensor with Photodiode in Solar Cell
mode

Yang Ni, YiMing Zhu, Bogdan Arion. New Imaging Technologies SA,
France

16:40-16:55 R36 An 89dB Dynamic Range CMOS Image Sensor with Dual Transfer Gate
Pixel

Xinyang Wang, Bram Wolfs, Guy Meynants, Jan Bogaerts. CMOSIS N.V,
Belgium

16:55-17:15 R38 A 1080 HD Ready 1/2.33-type 12M Pixel CCD Image Sensor with Dual
Channel Horizontal CCD

Koichi Yonemura, Toshihumi Habara, Hirokazu Shiraki, Yoshiaki Sato,
Akira Tsukamoto.  Panasonic Corporation, Japan

Session 09: Invited Presentation-III

Session chair: Shoji Kawahito (Shizuoka University)

17:30-18:00 I3 The 25th Anniversary of IISW: Reflections on Directions

Eric R. Fossum. Intl. Image Sensor Society, USA

Friday June 10th, 2011

Session 10: Invited Presentation and Avalanche Diode Sensors

Session chair: Shigetoshi Sugawa (Tohoku University) Satoshi Aihara
(NHK)

08:30-09:00 I4 Invited Presentation-IV

Single Photon Imaging

Peter Seitz. CSEM, Switzerland and EPFL STI IMT NE, Switzerland

09:00-09:20 R39 Single Photon Avalanche Diodes in 90nm CMOS Imaging Technology with
sub-1Hz Median Dark Count Rate

Eric. A. G. Webster1, Justin Richardson1,
Lindsay Grant2, Robert K.
Henderson1.1The University of Edinburgh, UK;
2STMicroelectronics, UK

09:20-09:40 R40 A 32×32 SPAD Pixel Array with Nanosecond Gating and Analog
Readout

Lucio Pancheri, Nicola Massari, Fausto Borghetti and David Stoppa.
Fondazione Bruno Kessler, Italy

09:40-10:00 R41 A Time-Gated 128X128 CMOS Spad Array for On-Chip Fluorescence
Detection 

Y. Maruyama and E. Charbon. Delft University of Technology, the
Netherlands

10:00-10:15 R42 3D Near-Infrared Imaging Based on a SPAD Image Sensor

Juan Mata Pavia1,2, Cristiano Niclass1, Claudio
Favi1, Martin Wolf2,               Edoardo
Charbon1,3. 1Ecole Polytechnique Fédérale de
Lausanne, Switzerland;2University Hospital Zürich,
Switzerland; 3TU Delft, Netherlands

10:15-10:30 R43 185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche
Diode with Active Quenching Circuit in 130 nm CMOS Technology

Andreas Eisele1,2, Robert Henderson3, Bernd
Schmidtke2, Tobias Funk2,         Lindsay
Grant4, Justin Richardson3,5, Wolfgang
Freude1,6. 1 IPQ, Karlsruhe Institute of
Technology, Germany; 2 Robert Bosch GmbH, Germany;
3 The University of Edinburgh,UK;
4STMicroelectronics Imaging Division, UK;
5 Dialog Semiconductor Ltd., UK; 6 IMT,
Karlsruhe Institute of Technology, Germany

10:30-10:45 R44 A Disdrometer Based on Ultra-Fast SPAD Cameras

A. Berthoud1, S. Burri1, C.
Bruschini1, A. Berne1, and E.
Charbon1,2. 1EPFL, Switzerland;
2Delft University of Technology, the Netherlands

Session 11: Large Area Sensors and Xray Sensors

Session chair: Bart Dierickx (Caeleste)

11:05-11:25 R45 A 300mm Wafer-Size CMOS Image Sensor for Low-Light-Level Imaging

Hidekazu Takahashi, Yuichiro Yamashita, Shin Kikuchi, Masato
Fujita,             Satoshi Hirayama, Taikan Kanou, Sakae Hashimoto,
Kazuyuki Shigeta,                   Takashi Aoki, Genzo Momma,
Shunsuke Inoue. Canon INC., Japan

11:25-11:40 R46 A 23 x 25.9cm2 RGB color CMOS Imager System for Digital
Photography

Hein Loijens, Bart Dillen, Wasim Muhammad, Daniel Verbugt, Laurens
Korthout, Peter te Vaarwerk, Auke van der Heide, Leon Ponjee, Kim
Theuwissen, Piet Jansen, Frank Polderdijk, Jan Bosiers. DALSA
Professional Imaging, the Netherlands

11:40-11:55 R47  A 61mmx63mm, 16Million Pixels, 40 Frames per Second, Radiation-Hard
CMOS Image Sensor for Transmission Electron Microscopy

N. Guerrini1, R. Turchetta1, G. Van
Hoften2, A. R. Faruqi3, G.
McMullan3,             R. Henderson3.
1Rutherford Appleton Laboratory, UK; 2 FEI, the
Netherlands; 3MRC Laboratory of Molecular Biology, UK

11:55-12:10 R48 Color X-ray Photon Counting Image Sensing

Bart Dierickx1,2, Benoit Dupont1,3, Arnaud
Defernez1, Nayera Ahmed1. 1Caeleste,
Belgium; 2V.U.B., Belgium; 3Université Paris
XIII, France

12:10-12:25 R50 Single Grain TFTs and Lateral Photodiodes for Large Area X-ray
Detection

A. Arslan, R. Ishihara, C.I.M. Beenakker. Delft University of
Technology, the Netherlands

Saturday, June 11th 2011

Session 12: Global Shutter Sensors

Session chair: Daniel Van Blerkom (Forza Silicon)

08:30-08:50 R51 Backside Illuminated Global Shutter CMOS Image Sensors

Guy Meynants, Jan Bogaerts, Xinyang Wang, Guido Vanhorebeek. CMOSIS
nv., Belgium

08:50-09:10 R53 A 1.2MP 1/3” Global Shutter CMOS Image Sensor with Pixel-Wise
Automatic Gain Selection

Johannes Solhusvik1, Sergey Velichko2, Trygve
Willassen1, Sohrab Yaghmai1, Jenny
Olsson1, Anders Rosnes1, Tore
Martinussen1, Per Olaf Pahr1, Siri
Eikedal1, Steve Shaw3, Ranjit
Bhamra3, Dan Pates2, Scott Smith2,
Lingtao Jiang2, David Wing2 ,       Jenny
Bai2, Satyadev Nagaraja2, Ajaya
Chilumula2. 1Aptina, Norway;2Aptina,
USA; 3Aptina, UK

09:10-09:25 R54 A Low Noise Low Power Global Shutter CMOS Pixel Having Single
Readout Capability And Good Shutter Efficiency.

Yannick De Wit, Tomas Geurts. ON Semiconductor, Belgium

09:25-9:40 R55 Dark Current Characterization of CMOS Global Shutter Pixels using
Pinned Storage Diodes

Keita Yasutomi, Yusuke Sadanaga, Taishi Takasawa, Shinya Itoh, Shoji
Kawahito. Shizuoka University, Japan

9:40-9:55 R56 A Common Gate Pinned Photodiode Pixel

Yannick De Wit, Manuel Innocent. On Semiconductor, Belgium

Session 13: High-Speed and ADC Techniques

Session chair: Tetsuo Nomoto (Sony) Inge Peters (Dalsa)

10:15-10:30 R57 Progress of Ultra-high-speed Image Sensors with In-situ CCD
Storage

T. G. Etoh1, V. T. S. Dao1, H. D.
Nguyen1, K. Fife2, M. Kureta3, M.
Segawa3,       M. Arai4 and T.
Shinohara4. 1Kinki University, Japan;
2Ubixum Inc, USA; 3JAEA, Japan; 4J-PARC,
Japan

10:30-10:45 R58 Design of a PTC-Inspired Segmented ADC for High Speed Column
Parallel CMOS Image Sensor

Steven Huang, Ramy Tantawy, Sinh Lam, Daniel Van Blerkom and Barmak
Mansoorian. Forza Silicon Corporation, USA

10:45-11:00 R59 A 26.2Mpixel, 74fps, Global Shutter CMOS Imager with 20Gb/s
Interface for Multi Object Monitoring

Cedric Esquenet, John Compiet, Tim Blanchaert, Tomas Geurts, Joost
Decupere. ON Semiconductor, Belgium

11:00-11:15 High Speed 36 Gbps 12Mpixel global pipelined shutter CMOS image
sensor with CDS

Jan Bogaerts, Koen Ruythooren, Aleksandar Gvozdenovic, Kevin Van
Esbroeck,    Bart Ceulemans, Werner Ogiers, Gavril Arsinte, Xinyang
Wang, Guy Meynants, CMOSIS nv, Belgium

11:15-11:30 R61 A High-Speed Low-Noise CIS with 12b 2-stage Pipelined Cyclic
ADCs

Jong-Ho Park1, Satoshi Aoyama1, Takashi
Watanabe1, Tomohiko Kosugi1,        Zheng
Liu1, Tomoyuki Akahori1, Masaaki
Sasaki1, Keigo Isobe1, Yuichi
Kaneko1, Kazuki Muramatsu1, Tetsuya
Iida1and Shoji Kawahito1,2. 1Brookman
Technology, Inc., Japan; 2Shizuoka University, Japan

11:30-11:50 R62 A 33 Mpixel, 120 fps CMOS Image Sensor for UDTV Application with
Two-stage Column-Parallel Cyclic ADCs

K. Kitamura1, T. Watabe1, Y.
Sadanaga2, T. Sawamoto2, T. Kosugi3,
T. Akahori3,    T. Iida3, K. Isobe3,
T. Watanabe3,H. Shimamoto1, H.
Ohtake1, S. Aoyama3,                 S.
Kawahito2, and N. Egami1. 1NHK,
Japan; 2Shizuoka University, Japan; 3Brookman
Technology, Inc., Japan

11:50-12:10 R63 A 17.7Mpixel 120fps CMOS Image Sensor with 34.8Gb/s Readout

Takayuki Toyama1, Koji Mishima1, Hiroyuki
Tsuchiya1, Tatsuya Ichikawa1, Hiroyuki
Iwaki1, Yuji Gendai1, Hirotaka
Murakami1, Kenichi Takamiya2,       Hiroshi
Shiroshita1, Noriyuki Fukushima1.
1Sony, Japan; 2Sony LSI Design, Japan