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2013 INTERNATIONAL IMAGE SENSOR WORKSHOP

Snowbird Resort, Utah, USA

June 12-16, 2013

PROGRAM

Wednesday June 12, 2013

17:30-20:30 Reception

Thursday, June 13, 2013

7:00 – 8:30 Breakfast
8:30 – 8:45 Welcome and Opening
Eric R. Fossum, Co-Chair and President, IISS Boyd Fowler, Co-Chair

Session 01

Pixel Technology Overview and Small Pixel Sensors

Session chair: Nobukazu Teranishi (University of Hyogo / Shizuoka
University)

08:45 – 09:00 1.01 Innovative Technology Elements for Large and Small Pixel CIS
Devices
Ray Fontaine, Technology Analysis Group, Chipworks, Inc. Ottawa,
Canada.
09:00 – 09:15 1.02 Blooming and Antiblooming in 1.1um-Pixel CIS
Calvin Chao, Kuo-Yu Chou, Charles Liu, Yi-Che Chen, Hon-Yih Tu,
Hsiu-Yu Cheng, Fu-Lung Hsueh, and Shou-Gwo Wuu, Taiwan Semiconductor
Manufacturing Company, Hsinchu, Taiwan.
09:15 – 09:30 1.03 Development of Lensed Color Filter Technology for Higher SNR and
Lower Crosstalk CMOS Image Sensor
Hong-Ki Kim, Bumsuk Kim, Jung-Saeng Kim, Jungkuk Park, Yooseung Lee,
Taesub Jung, Kyungho Lee, Heegeun Jung, Chang-Rok Moon, JungChak Ahn,
Goto Hiroshige, Chi-Young Choi and Duckhyung Lee; LSI Product &
Technology, System LSI Division, Samsung Electronics Co., Ltd.; Color
Filter Technology Group, System LSI, Division, Samsung Electronics
Co., Ltd, Yongin-City, Gyeonggi-Do, Korea.
09:30 – 09:45 1.04 Architecture and Development of Next Generation Small BSI Pixels
H. Tian, H. Komori, G. Agranov, J. Bai, J. Hynecek, C. Baron, H-W.
Lee, X. Zhao, W. Gazeley, D. Tekleab, S. Nagaraja, W. Gao, P. Adepu,
V. Rajasekaran, A. Rayankula, U. Boettiger, M. Mooney, B. Vaartstra,
Aptina Imaging, San Jose, CA, USA.
09:45 – 10:10 Break

Session 02

Imaging Process and Specialty Pixels

Session co-chairs: Shou-Gwo Wuu (TSMC), Jungchak Ahn (Samsung)

10:10 – 10:25 2.01 Fundamental Ion Implantation Technologies for Image Sensor
Devices
G. Fuse, and M. Sugitani SEN Corporation, Saijo, Japan. (Revised)
10:25 – 10:40 2.02 The Impact of Gate Edge Damage on Pixel Read Noise
Jhy-Jyi Sze, R.J. Lin, Seiji Takahashi, J.M. Hung, Y.C. Lu, T.H.
Tseng, C.C. Wang, S.F. Ting, and Shou-Gwo Wuu, Taiwan Semiconductor
Manufacturing Company, Taiwan, R.O.C.
10:40 – 10:55 2.03 Photolithographic Solutions for Image Sensors with High Pixel
Density
Ryo Sasaki, Yuhei Sumiyoshi, Yasuo Hasegawa and Seiya Miura, Canon
Inc., Tochigi, Japan.
10:55 – 11:10 2.04 Dark Current Reduction in Image Sensors through Metals Gettering: A
Critical Review of Disruptive Techniques
Venkataramana R. Chavva, Kyu-Ha Shim, and Todd Henry, Applied
Materials.–. Varian semiconductor Equipment, Gloucester, MA, USA.
11:10 – 11:25 2.05 The DUV Stability of Superlattice-doped CMOS Detector Arrays
M. E. Hoenk, A. G. Carver, T. Jones, M. Dickie, P. Cheng, F. Greer, S.
Nikzad (Jet Propulsion Laboratory, California Institute of Technology,
CA, USA), J. Sgro (Alacron, Inc., Nashua, NH, USA), S. Tsur (Applied
Materials Inc., Process, Diagnostics & Control, Rehovot, Israel).
11:25 – 11:40 2.06 High Quantum Efficiency Back Illuminated Photon Counting, Far UV,
UV, and Visible Detector Arrays and their High Throughput
Fabrication
Shouleh Nikzad, M. E. Hoenk, A. Carver, T.J. Jones, F. Greer, E.
Hamden, and T. Goodsall, Jet Propulsion Laboratory, California
Institute of Technology, USA.
11:40 – 13:10 Lunch

Session 03

Specialty Pixels and Application Specific Imagers

Session chair: Daniel Van Blerkom (Forza Silicon)

13:10 – 13:25 3.01 A 240×180 120dB 10mW 12us‐latency Sparse Output Vision Sensor for
Mobile Applications
Raphael Berner, Christian Brandli, Minhao Yang, Shih-Chii Liu and Tobi
Delbruck, Inst. of Neuroinformatics, University of Zurich and ETH
Zurich, Zurich, Switzerland. (Slides)
13:25 – 13:40 3.02 Two-color Indirect X-ray Photon Counting Image Sensor
Bart Dierickx, Stijn Vandewiele, Benoit Dupont, Arnaud Defernez, Nick
Witvrouwen, Dirk Uwaerts, Caeleste, Antwerp, Belgium.
13:40 – 13:55 3.03 Fully Organic Integrated Arrays on Flexible Substrates for X-Ray
Imaging
Pawel E. Malinowski1, Abhishek Kumar, Date J.D. Moet, David Cheyns,
Barry P. Rand, Jan-Laurens P.J. van der Steen, Kris Myny, Soeren
Steudel, Matthias Simon, Gerwin Gelinck, and Paul Heremans; IMEC,
Leuven, Belgium; Holst Centre, Eindhoven, The Netherlands, Philips
Research, Eindhoven, The Netherlands. (Slides)
13:55 – 14:10 3.04 MEM-FLIM, a CCD Imager for Fluorescence Lifetime Imaging
Microscopy
Jan Bosiers, Harry van Kuijk, Wilco Klaassens, René Leenen, Willem
Hoekstra, Walter de Laat, Agnes Kleimann, Inge Peters, Jan Nooijen,
Qiaole Zhao1, Ian Ted, Young, Sander de Jong, Kees Jalink, Teledyne
DALSA Professional Imaging, The Netherlands, Delft University of
Technology, Delft, NL; Lambert Instruments, Roden, NL; Netherlands
Cancer institute, Amsterdam, NL.
14:10 – 14:25 3.05 A Direct-Detection X-Ray Cmos Image Sensor with 500 μm Thick High
Resistivity Silicon
T. Hatsui, M. Omodani, T. Kudo, K. Kobayashi, T. Imamura，T. Ohmoto,
A. Iwata，S. Ono，Y. Kirihara，T. Kameshima, H. Kasai, N. Miura, N.
Kuriyama, M. Okihara, Y. Nagatomo, M. Nagasaki, T. Watanabe, Makina
Yabashi1 , RIKEN Spring-8 Center, JASRI, A-R-Tec Corp., LAPIS
Semiconductor Miyagi Co., Ltd., LAPIS Semiconductor Co., Ltd., ARKUS
Inc, University of Hyogo, Japan.
14:25 – 14:40 3.06 A FSI CMOS Image Sensor with 200-1000 nm Spectral Response and High
Robustness to Ultraviolet Light Exposure
Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa
Koda, Katsuhiko Hanzawa and Shigetoshi Sugawa, Graduate School of
Engineering, Tohoku University, Miyagi, Japan.
14:40 – 15:05 Break

Session 04

Noise.

Session chair: Tetsuo Nomoto (SONY)

15:05 – 15:20 4.01 Read Noise Distribution Modeling for CMOS Image Sensors
Boyd Fowler, Dan McGrath, and Peter Bartkovjak, BAE Systems Imaging
Solutions, Milpitas, CA 95035 USA.
15:20 – 15:35 4.02 Novel Device with Ultra Low Noise for Smaller CMOS Image Sensor
Pixel
T.H. Hsu, Shou-Gwo Wuu, D.N. Yaung, J.C. Liu, H.H. Tseng, W.D. Wang,
W.C. Hsu, W.I. Hsu, T.J. Wang, Y.L. Tu, C.S. Tsai, W.P. Mo, C.E. Chen
Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, R.O.C.
15:35 – 15:50 4.03 New Model of Dark Fixed Pattern Noise Generation in CMOS Imager
Pixel with Negative Transfer-Gate Bias Operation
H. Sasaki, Y. Higashi, H. Yamashita, T. Yoshida, N. Momo, T. Ohguro,
H. S. Momose, and Y. Toyoshima, Toshiba Corporation, Yokohama, Japan.
15:50 – 16:05 4.04 Emission Microscopy analysis of hot cluster defects of imagers
processed on SOI
G. Meynants, W. Diels, J. Bogaerts, W. Ogiers, CMOSIS, Antwerp,
Belgium.
16:05 – 16:30 Break

Session 05

Poster Flash Presentations

Session chair: Bart Dierickx (Caeleste)

16:30 – 17:30 5.01 Feed-Forward Voltage in CMOS Pinned Photodiodes
Mukul Sarkar (Indian Institute of Technology Delhi), Bernhard Büttgeny
(Mesa Imaging), and Albert J.P. Theuwissen (University of
Technology Delft/Harvest Imaging).
5.02 1280×1024 Logarithmic Snapshot Image Sensor with Photodiode in
Solar Cell mode
Yang Ni, New Imaging Technologies SA, France.
5.03 New Monolithic CMOS Sensors on a Fully Isolated Substrate
Abderrezak Mekkaoui, Dario Gnani, Maurice Garcia-Sciveres, Lawrence
Berkeley National Laboratory, Berkeley, CA, USA.
5.04 Logarithmic Image Sensor for Wide Dynamic Range Stereo Vision
System
Christian Bouvier, Yang Ni, New Imaging Technologies SA, France.
5.05 Segmented-base CMOS Image Sensor for Machine Vision Application
Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto Tokyo
University of Science, Tokyo, Japan.
5.06 1.1um Back-Side Illuminated Image Sensor Performance Improvement
Chi Han_Lin, Chih-Kung Chang, Yu-Kun Hsiao, Yueh-Ching Cheng,
Chih-Cherng Jeng, Kuo-Cheng Lee, Chun-Hao Chou, Yi-Yi Cheng, Yen-Hsung
Ho, Yin-Chieh Huang, Chin-Chuan Hsieh; VisEra Technologies Company,
Hsinchu Science Park, Taiwan;  Taiwan Semiconductor Manufacturing
Company, Hsinchu Science Park, Taiwan.
5.07 CF/ML Shift Optimization for Small Pixel CMOS Image Sensor through
FDTD Simulation
Wu-Cheng Kuo, Wei-Chieh Chiang, Ren-Jie Lin, Yu-Kun Hsiao, Jen-Cheng
Liu, Tsung-Hao Lin, Hui-Min Yang, D.N. Yaung, and Shou-Gwo Wuu,
Chin-Chuan Hsieh VisEra Technologies Company, Hsinchu Science Park,
Taiwan Taiwan Semiconductor Manufacturing Company, Hsinchu Science
Park, Taiwan.
5.08 The Image Quality Standard based on Human Visual System for the
Spectral Sensitivity Crosstalk Depending on Lens F-number
Kazuyuki Matsushima, Masaaki Sato, Shinichiro Saito, Sony Corporation,
Tokyo, Japan.
5.09 Application Demonstration Of Polarization-Analyzing CMOS Image
Sensor and Performance Improvement Using 65 nm Standard CMOS
Process
Takashi TOKUDA, Norimitsu WAKAMA, Toshihiko NODA, Kiyotaka SASAGAWA,
Kiyomi KAKIUCHI, and Jun OHTA, Graduate School of Materials Science,
Nara Institute of Science and Technology, Nara, Japan.
5.10 Image Sensor Performance from a Security Camera Perspective
Anders Johannesson and Henrik Eliasson, Axis Communications AB, Lund,
Sweden.
5.11 A Passive Integrator to Achieve Low Power, Low Noise Signal
Amplification
Yannick De Wit, ON-Semiconductor, Mechelen, Belgium.
5.12 BSI Low Light Level CMOS Image Sensor Employing P-type Pixel
John Tower, James Janesick, Thomas Senko, Peter Levine, Mark Grygon,
James Andrews, Judy Zhu, Thomas Vogelsong, SRI International,
Princeton, NJ, USA Guang Yang, Steven Huang, Chao Sun, Barmak
Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA.
5.13 A Low Power Counting Method in Ramp ADCs used in CMOS Image
Sensors
Cheng Ma, Xinyang Wang, ChangChun Institute of Optics, Fine Mechanics
and Physics, Chinese Academy of Science, Changchum, China.
5.14 Single Slope ADC with On-chip Accelerated Continuous-time
Differential Ramp Generator for Low Noise Column-Parallel CMOS Image
Sensor
Dexue Zhang, Rami Yassine, Loc Truong, Jeff Rysinski, Daniel Van
Blerkom and Barmak Mansoorian, Forza Silicon Corporation, Pasadena,
CA, USA.
5.15 Division-of-Focal-Plane Spectral-Polarization Imaging Sensor
Viktor Gruev, Meenal Kulkarni, Department of Computer Science and
Engineering, Washington University in Saint Louis, Saint Louis, MO,
USA.
5.16 Simple Technique to Reduce FPN in a Linear-Logarithm APS
Carlos A. de Moraes Cruz, Davies W. de Lima Monteiro, Gilles Sicard
and Alexandre K. P. Souza, Department of Electronics and Computation,
Universidade Federal do Amazonas, Manaus, AM, Brazil; Graduate Program
in Electrical Engineering – Federal University of Minas Gerais, Belo
Horizonte, MG, Brazil;Department of Electrical Engineering, DEE/PPGEE,
Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil; TIMA
Laboratory, CNRS, Grenoble INP, Grenoble, France.
5.17 Reduction of Motion Blur in CMOS Linear Arrays and TDI Imagers
Benoit Dupont, Bart Dierickx, Caeleste, Antwerp, Belgium.
5.18 Column-Parallel Architecture for Line-of-Sight Detection Image
Sensor based on Centroid Calculation
Hayato Kawakami, Satori Igarashi, Yuta Sasada, Junichi Akita, School
of Electrical and Comp. Eng., Kanazawa University, Kanazawa, Ishikawa,
Japan. (Revised)
5.19 Image Lag Analysis and Photodiode Shape Optimization of 4T CMOS
Pixels
Yang Xu1, Albert J.P. Theuwissen; Delft University of Technology,
Delft, the Netherlands; Harvest Imaging, Bree, Belgium. (Revised)
5.20 A Radiation Tolerant 4T pixel for Space Applications: Layout and
Process Optimization
Manuel Innocent, ON Semiconductor, Mechelen, Belgium.

Friday, June 14, 2013

7:00 – 8:30 Breakfast

Session 06

Avalanche Photo Diode and Photon Counting

Session chair: Lindsay Grant (ST Microelectronics)

08:30 – 08:45 6.01 CMOS Image Sensors Based on Linear Mode APDs: Analysis and Future
Perspectives
Lucio Pancheri, Olga Shcherbakova, Nicola Massari, Gian-Franco Dalla
Betta and David Stoppa: University of Trento, Trento, Italy;
Fondazione Bruno Kessler, Trento, Italy.
08:45 – 09:00 6.02 Two-Dimensional Mapping of Photon Counts in Low-Noise Single-Proton
Avalanche Diodes
Jau-Yang Wu, Shu-Cheng Li, Fang-Ze Hsu, and Sheng-Di Lin, Department
of Electronics Engineering, National Chiao Tung University, Hsinchu,
Taiwan. (Revised)
09:00– 09:15 6.03 9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias
Controlled Sensitivity
Neale A.W. Dutton, Lindsay A. Grant1, Robert K. Henderson ST
Microelectronics Imaging Division, Pinkhill, Edinburgh, UK,The
University of Edinburgh, Edinburgh, UK. (Slides)
09:15– 09:30 6.04 Stabilizing Sensitivity in Large Single-Photon Image Sensors with
an Integrated 3.3-to-25V All-Digital Charge Pump
Shingo Mandaiy and Edoardo Charbon, Delft University of Technology,
Delft, The Netherlands.
09:30– 09:45 6.05 A 92k SPAD Time-Resolved Sensor in 0.13μ m CIS Technology for
PET/MRI Applications

Richard J. Walker, Leo H. C. Braga, Ahmet T. Erdogan, Leonardo
Gasparini, Lindsay A. Grant, Robert K. Henderson, Nicola Massari,
Matteo Perenzoni, David Stoppa; CMOS Sensors and Systems (CSS) Group,
School of Engineering, The University of Edinburgh, Edinburgh, UK;
Smart Optical Sensors and Interfaces (SOI) Group, Fondazione Bruno
Kessler (FBK), Trento, Italy; Imaging Division, ST Microelectronics,
Edinburgh, UK. (Slides)
09:45– 10:00 6.06 Monolithic Integration of LEDs and Silicon Photomultipliers in
Standard CMOS Technology for Consumer Applications
Nupur Lodha, Shingo Mandai, and Edoardo Charbon; Circuits and Systems,
Delft University of Technology, Delft, The Netherlands.
10:00– 10:15 6.07 Silicon integrated electrical micro – lens for CMOS SPADs based on
avalanche propagation phenomenon
Chockalingam Veerappan, Student Member IEEE, Yuki Maruyama, Member
IEEE, Edoardo Charbon, Senior Member IEEE
10:15 – 10:40 Break

Session 07 10:40 – 12:00

Poster Flash Presentations II

Session chair: Johannes Solhusvik (Omnivision)

7.01 Device Simulation with Electromagnetic Field Propagation Models for
High-Speed Image Sensors and FDA Noise Analysis

Hideki Mutoh, Link Research Corporation, Odawara, Kanagawa,
Japan.
(Slides)
7.02 Monolithic integration of flexible spectral filters with CMOS image
sensors at wafer level for low cost hyperspectral imaging
Murali Jayapala, Andy Lambrechts, Nicolaas Tack, Bert Geelen, Bart
Masschelein, Philippe Soussan , IMEC,  Leuven, Belgium.
7.03 Prototype TDI sensors in embedded CCD in CMOS technology
Alper Ercan, Luc Haspeslagh, Koen De Munck, Kyriaki Minoglou, Anne
Lauwers,Piet De Moor; Imec, Heverlee, Belgium; ESAT KU Leuven,
Heverlee, Belgium.
7.04 A Dual Exposure Method for Wide Dynamic Range Operation of CMOS
Image Sensors
Woon-Il Choi, Hashimoto Masashi, Masayuki Uno and Hi-Deok, Dept. of
Electronics Engi., Chungnam National Univ., Daejeon, Korea; LG
Innotek, Ansan, Kyeonggi, Korea; Linear Cell Design Corp. Ina-shi,
Nagano, Japan.
7.05 A low – invasive micro imaging device for measuring neural
activities implanted in the mouse deep brain
Jun Ohta, Chiakra Kitsumoto, Makito Haruta, Yoshinori Sunaga,
Toshihiko Noda, Kiyotaka Sasagawa,Takashi Tokuda, Mayumi Motoyama, and
Yasumi Ohta Graduate School of Materials Science, Nara Institute of
Science and Technology, Nara, Japan.
7.06 Designing Incremental Sigma – Delta ADCs for low Thermal Noise in
Image Sensors
Hideki Mutoh, Link Research Corporation, Odawara, Kanagawa,
Japan.
(Revised)
7.07 Digital Integration Sensor
Song Chen, Andrew Ceballos, and Eric R. Fossum, Thayer School of
Engineering at Dartmouth, Hanover, NH, USA.
(Revised
,
Slides)
7.08 Design of Analog Readout Circuitry with Front – end Multiplexing
for Column Parallel Image Sensors
Steven Huang, David Estrada, Daniel Van Blerkom and Barmak Mansoorian,
Forza Silicon Corporation, Pasadena, CA, USA.
7.09 RF Design Issues and Challenges in a CMOS Image Sensor Process
Loc Truong, Dexue Zhang, Tomer Leitner1 and Barmak Mansoorian, Forza
Silicon Corporation, Pasadena, CA, USA, 1: Tower Semiconductor LTD.
7.10 A 120 μW vision chip with ROI detection
Arnaud Verdant, Antoine Dupret, Patrick Villard, Laurent Alacoque (CEA
– LETI – MINATEC Campus, Grenoble, France), Hervé Mathias, Flavien
Delgehier (IEF, Orsay, France).
7.11 Design of Pixel for High Speed CMOS Image Sensors
Zhongxiang Cao, Yangfan Zhou, Quanliang Li, Qi Qin, Liyuan Liu, and
Nanjian Wu State Key Laboratory of Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P.
R. China.
7.12 A multi-channel digital silicon photomultiplier array for nuclear
medical imaging systems based on PET-MRI
Shingo Mandaiy and Edoardo Charbon, Delft University of Technology,
Delft, The Netherlands.
7.13 Real – time Calibration of a 14 – Bit Single Slope ADC with 290MHz
On – chip Accelerated Ramp Generator for Column – Parallel Image
Sensors
Jonathan Bergey, Sam Bagwell, Jackson Law, Wilson Law, Forza Silicon
Corporation, Pasadena, CA, USA.
7.14 A novel architecture for the implementation of a family o f high
speed, multi-line CMOS image sensors

M. Moser, E. Fox, D. Deering, P. Donegan, M. Sonder, D. Marchesan, D.
Verbugt, Binqiao Li, Feng-Hua Feng, Shujuan Xie, N. Safavian, R.
Ghannoum, H. Mei, TELEDYNE DALSA Corporation, Waterloo, ON, Canada.
7.15 On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode
Capacitance and Transfer Gate Channel Potential
Vincent Goiffon, Julien Michelot, Pierre Magnan, Magali Estribeau,
Olivier Marcelot, Paola Cervantes, Alice Pelamatti, and Philippe
Martin-Gonthier, ISAE, Université de Toulouse, Toulouse, France;
Pyxalis, Grenoble, France. (Revised)
7.16 Novel Auto-Adaptive Integration-Time Technique for CMOS Image
Sensor
Hassan Abbass1, Hawraa Amhaz, David Alleyson, Gilles Sicard1, TIMA
Laboratory (CNRS, Grenoble INP, UJF), LPNC Laboratory, Pierre Mendes
France University, Grenoble, France.
7.17 Digital Integration Sensor
Emanuele
Mandelli, Lester Kozlowski, AltaSens Inc, Westlake Village, CA,
USA.
7.18 A Fully Depleted Backside Illuminated CMOS Imager with VGA
Resolution and 15 micron Pixel Pitch
Stefan Lauxtermann, Vikram Vangapally, Sensor Creations Inc. (SCI),
Camarillo, CA, USA. (Slides)
7.19 Linear High – Dynamic – Range Bouncing Pixel with Single Sample
Pablo N. A. Belmonte, P.J. French, Davies W. De Lima Monteiro, Frank
Sill Torres, Department of Electrical Engineering, DEE/PPGEE,
Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil;
Delft University of Technology, Electronic Instrumentation Laboratory,
Delft, The Netherlands.
7.20 Jailbreak Imagers: Transforming a Single-Photon Image Sensor into a
True Random Number Generator
Samuel Burri, Damien Stucki, Yuki Maruyama, Claudio Bruschini, Edoardo
Charbon, Francesco Regazzoni, EPFL, School of Engineering, Lausanne,
Switzerland; ID Quantique, Switzerland; Delft University of
Technology, Delft, Netherlands.
7.21 Comparison of Two Cameras based on Single Photon Avalanche Diodes
(SPADS) for Fluorescence Lifetime Imaging Application with
Picosecond Resolution
F. Powolny, S. Burri, C. Bruschini, X. Michalet, F. Regazzoni, E.
Charbon, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne,
Switzerland; Centre Hospitalier Universitaire Vaudois (CHUV),
Lausanne, Switzerland; University of California, Los Angeles (UCLA),
Los Angeles, USA;Delft University of Technology, Delft, The
Netherlands.
7.22 Radiation-hard Active Pixel Detectors for Tracking of Charged
Particles based on HV-CMOS Technology
F. Bompard, S. Feigl, M. Garcia-Sciveres, L. Meng, D. Muenstermann, P.
Pangaud, I. Peric, and A. Rozanov1, CPPM, Aix-Marseille Universite,
Marseille, France; CERN, Geneve, Switzerland; Lawrence Berkeley
National Laboratory, Berkeley, CA, USA; DPNC, Universite de Geneve,
Geneve, Switzerland; Institute for Computer Science, University of
Heidelberg, Mannheim, Germany.
7.23 Digital Calibration Algorithm for 2 – Stage Cyclic ADC used in 33 –
Mpixel 120 – fps CMOS Image Sensor
T. Watabe, K. Kitamura, T. Hayashida, T. Kosugi, H. Ohtake, H.
Shimamoto, S. Kawahito, and N. Egami; NHK Engineering System, Inc.,
Setagaya-ku, Tokyo, JAPAN ; NHK Science and Technology Research
Laboratories; Brookman Technology, Inc.; Shizuoka University, Japan.
7.24 An Optical Punch – Through Diode and Gate Biasing 1 – T Pixel for
Binary Pixels in Fully Digital CMOS Image Sensor
Hyung-june Yoon and Edoardo Charbon; EPFL, Lausanne, Switzerland;
Delft University of Technology, Delft, Netherlands.
7.25 A 5.2Mpixel@250Fps 16Gbps CMOS Image Sensor with Embedded Digital
Processor for Reconfigurability and on-chip Image Correction

Francisco Jiménez-Garrido, José Fernández-Pérez, Cayetana Utrera, José
Ma Muñoz, Ma. Dolores Pardo, Rafael Domínguez-Castro, Fernando Medeiro
and Angel Rodríguez-Vázquez; 1Universidad de Sevilla, Instituto de
Microelectrónica de Sevilla (IMSE-CNM), Sevilla, Spain; Consejo
Superior de Investigaciones Científicas (CSIC), Instituto de
Microelectrónica de Sevilla (IMSE-CNM); Innovaciones Microelectrónicas
S.L. (ANAFOCUS); Sevilla (Spain).
7.26 Reconfigurable Focal-Plane Hardware for Block-Wise Intra-Frame HDR
Imaging
Jorge Fernandez-Berni, Ricardo Carmona-Galan, Angel Rodrıquez-Vazquez,
Institute of Microelectronics of Seville (CSIC – Universidad de
Sevilla) Seville, Spain.
12:00-13:30 Lunch
13:30 – 17:30 Social Event – Tram Ride to Hidden Peak (11,000 ft)
17:30 – 19:00 Poster viewing and reception

Saturday, June 15, 2013

7:00 – 8:30 Breakfast

Session 08

Invited Presentation, Array Imagers and Large Area Sensors

Session co-chairs: Junichi Nakamura (Aptina Imaging), Shouleh Nikzad
(JPL, California Institute of Technology)

08:45 – 09:05 8.01 Zooming in to Multi – Aperture Cameras
Gal Shabtay, Noy Cohen, David Mendlovic and Eran Kali,
Corephotonics Ltd, Israel.
09:05 – 09:20 8.02 LASSENA: A 6.7 M egapixel, 3 – sides Buttable Wafer – Scale CMOS
Sensor using a novel grid – addressing architecture
I Sedgwick, D Das, N Guerrini, B Marsh, R Turchetta, Science and
Technology Facilities Council, Rutherford Appleton Laboratory, UK.
09:20– 09:35 8.03 Requirements, developments and challenges for and CMOS image
sensors for space applications
P.Garé, N.Nelms, Y.Nowicki-Bringuier, D.Martin, R.Meynart, M.Zahir,
European Space Agency, Noordwijk, The Netherlands.
09:35– 09:50 8.04 Fabrication of large format, fully depleted CCDs for the Dark
Energy Survey Camera
S.E. Holland, C.J. Bebek, K.S. Dawson, H.T. Diehl, F. Dion, J.H. Emes,
J. Estrada, R. Frost, R. Groulx, A. Karcher, W.F. Kolbe, D. Kubik,
N.P. Palaio, C.H. Tran, G. Wang, and N.A. Roe; Lawrence Berkeley
National Laboratory, Berkeley, CA, USA; Teledyne DALSA Semiconductor,
Bromont, Québec, Canada; Fermi National Accelerator Laboratory,
Batavia, IL, USA; University of Utah, Salt Lake City, UT, USA. (Revised)
09:50– 10:15 8.05 A 12 MP 16 – Focal Plane CMOS I mage S ensor with 1.75 μm Pixel :
Architecture and Implementation
Kwang-Bo Cho, Nick Tu, John Brummer, Khandaker Azad, Leo Hsu, Vivian
Wang, Dongsoo Kim, Krishna Palle, Tien-Min Miao, Yandong Chen, Canaan
Hong, Toan Bao, Vitanshu Sharma1, Yuan Fong, Kumudini Irkar, Syed
Hashmi, Vinesh Sukumar, Salman Kabir, Gershon Rosenblum, Yong Gao,
Kil-Ho Ahn, Hyuk-Jin Ko, Jeff Watson, Chris Kenoyer; Aptina, LLC, San
Jose, CA, USA; Aptina Korea Co, Seoul, Korea; Aptina, LLC, Corvallis,
OR, USA.
10:05 – 10:30 Break

Session 09

Image Sensor Design

Session chair: Alex Krymski (Alexima)

10:30 – 10:45 9.01 Application of Photon Statistics to the Quanta Image Sensor
Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover,
NH, USA. (Slides)
10:45 – 11:00 9.02 Early Research Progress on Quanta Image Sensors
Saleh Masoodian, Yue Song, Donald Hondongwa, Jiaju Ma, Kofi Odame and
Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover,
NH, USA.
(Slides)
11:00 – 11:15 9.03 Organic CMOS Image Sensor with Thin Panchromatic Organic
Photoelectric Conversion Layer : Durability and Performance

Mikio Ihama, Hideyuki Koguchi, Hiroshi Inomata, Hideki Asano,Yuuki
Imada, Yasuyoshi Mishima, Yoshihisa Kato, Yutaka Hirose, Mizuki
Segawa, Tetsuya Ueda, Shinji Kishimura; Frontier Core-Technology
Laboratories, FUJIFILM Corporation, Kanagawa, Japan; Industrial
Devices Company, Panasonic Corporation, Nagaokakyo City, Kyoto, Japan.
11:15 – 11:30 9.04 Fabrication of large format, fully depleted CCDs for the Dark
Energy Survey Camera
S.E. Holland, C.J. Bebek, K.S. Dawson, H.T. Diehl, F. Dion, J.H. Emes,
J. Estrada, R. Frost, R. Groulx, A. Karcher, W.F. Kolbe, D. Kubik,
N.P. Palaio, C.H. Tran, G. Wang, and N.A. Roe; Lawrence Berkeley
National Laboratory, Berkeley, CA, USA; Teledyne DALSA Semiconductor,
Bromont, Québec, Canada; Fermi National Accelerator Laboratory,
Batavia, IL, USA; University of Utah, Salt Lake City, UT, USA. (Revised)
11:30 – 11:45 9.05 A 4K2K 60fps Image Sensor Based on Stagger-laced Dual-exposure
Technique

Yusuke Okada, Takeo Azuma, Toshinobu Matsuno, Hiroyoshi Komobuchi
(Panasonic Corporation, Kyoto, Japan), Jan Craninckx, Bertrand
Parvais, Kyriaki Minoglou, Koen De Munck, Luc Haspeslagh, Piet De Moor
(IMEC, Heverlee, Belgium), Serge Biesemans (now at TEL Europe).
11:45 – 12:00 9.06 24 MPixel 36 x 24 mm2 14 bit image sensor in 110/90 nm
CMOS techn
G. Meynants, J. Bogaerts, B. Wolfs, B .Ceulemans, T. DeRidder, A.
Gvozdenović, E. Gillisjans, X. Salmon, G. VandeVelde, CMOSIS nv,
Antwerp, Belgium.
12:00 – 12:15 9.07 A 1.1 e – rms temporal noise 87 .5 dB DR CMOS image sensors with
low – noise transistors and column – parallel ADCs
Min-Woong Seo, Takehide Sawamoto, Tomoyuki Akahori, Zheng Liu, Keita
Yasutomi, Keiichiro Kagawa, and Shoji Kawahito; 1Research Institute of
Electronics, Shizuoka University, Johoku, Hamamatsu, Japan; Brookman
Technology, Inc, Hamamatsu, Japan.
12:15 – 13:45 Lunch

Session 10

Depth Sensing, TOF, and Time Resolving Imaging.

Session co-chairs: David Stoppa (Fondazione Bruno Kessler), Edoardo
Charbon (Delft University of Technology)

13:45 – 14:00 10.01 A CMOS Image Sensor for In-Pixel Background Suppression and
Frequency and Phase Detection for Structured Light 3-D Acquisition
Systems
Hiroki Yabe (Department of Electrical Engineering and Information
Systems, The University of Tokyo, Tokyo, Japan) and Makoto Ikeda
(VLSI Design and Education Center (VDEC), The University of Tokyo,
Tokyo, Japan).
14:00 – 14:15 10.02 Compact Ambient Light Cancellation Design and Optimization for 3D
Time-of-Flight Image Sensors
 Yibing M. Wang, Ilia Ovsiannikov, Sung-Jae Byun, Tae-Yon Lee,
Yongjei Lee, Grzegorz Waligorski, Hongyu Wang, Seunghoon Lee2,
Dong-Ki Min, Yoondong Park, Tae-Chan Kim, Chi-Young Choi, Gabsoo
Han, and Eric R. Fossum; Samsung Semiconductor, Inc., Pasadena, CA,
USA; Samsung Electronics Co. Ltd., Image Development Team, Giheung,
South Korea; Kunsan National University, Dept. of Physics, Jeonbuk,
South Korea.
14:15 – 14:30 10.03 3dim: Compact and Low Power Time-of-Flight Sensor for 3D Capture
Using Parametric Signal Processing
Andrea Colaco, Ahmed Kirmani, Nan-Wei Gong,Tim McGarry, Laurence
Watkins, and Vivek K Goyal, 1Massachusetts Institute of Technology;
3dim Tech, Inc.; Princeton Optronics.
14:30 – 14:45 10.04 CMOS Image Sensor for 3-D Range Map Acquisition With Pixel-Parallel
Correlation In Region of Interest
Takahiko Matsushima and Makoto Ikeda; Department of Electrical
Engineering and Information Systems, The University of Tokyo; VLSI
Design and Education Center (VDEC), The University of Tokyo, Tokyo,
Japan.
14:45 – 15:00 10.05 A Time-Of-Flight Image Sensor with Sub-mm Resolution Using Draining
Only Modulation Pixels
Keita Yasutomi, Takahiro Usui, Sang-Man Han, Masatoshi Kodama,Taishi
Takasawa, Keiichiro Kagawa, Shoji Kawahito; Shizuoka University,
Hamamatsu, Japan.
15:00 – 15:15 10.06 CMOS Lock – in Pixel Image Sensor s with Lateral Eelectric Field
Cotrol for Time – Resolved Imaging
Shoji Kawahito, Guseul Baek, Zhuo Li, Sang-Man Han, Min-Woong Seo,
Keita Yasutomi and Keiichiro Kagawa; Research Institute of
Electronics, Shizuoka University, Hamamatsu, Japan
15:15 – 15:40 Break

Session 11

Invited Presentation and High Speed.

Session chair: Shoji Kawahito (Shizuoka University)

15:40 – 15:55 11.01 CMOS Image Sensor Pixel with 2D CCD M em ory B ank for Ultra High
Speed Imaging with Large Pixel Count
A. Lahav, J. Crooks, B. Marsh, R. Turchetta, and A. Fenigstein,
TowerJazz Semiconductor Ltd, Migdal Haemek, Israel; STFC Rutherford
Appleton Laboratory, Didcot, Oxfordshire, UK.
15:55 – 16:10 11.02 Ultra ‐ high speed imaging at megaframes per second with a
megapixel CMOS image sensor

 J. Crooks, B. Marsh, R. Turchetta, K. Taylor, W. Chan, A. Lahav, A.
Fenigstein, STFC Rutherford Appleton Laboratory, Didcot,
Oxfordshire, UK; Specialised Imaging, Tring, Hertfordshire, UK;
TowerJazz Semiconductor Ltd, Migdal Haemek, Israel. (Revised
,
Slides)
16:10 – 16:25 11.03 High speed, backside illuminated 1024×1 line imager with charge
domain frame store in Espros Photonic CMOS TM technology
Martin Popp, Beat De Coi, Dieter Huber, Pascal Ferrat, Markus
Ledergerber, Espros Photonics AG, Sargans, Switzerland. (
Slides)
16:25 – 16:40 11.04 Toward one Giga frames per second: Multi-Collection-Gate BSI Image
Sensors

Takeharu G. Etoh, Son V. T. Dao, Tetsuo Yamada and Edoardo Charbon,
Ritsumeikan University, Kusatsu, Japan; Tokyo Polytechnic University,
Atsugi, Japan; Technische Universiteit Delft, Delft, the Netherlands.
16:40 – 16:55 11.05 A 5 Megapixel, 1000fps CMOS I mage S ensor with H igh Dynamic Range
and 14 – bit A/D C onverters
Bart Cremers, Manuel Innocent, Carl Luypaert, John Compiet, Ishwar
Chandra Mudegowdar, Cedric Esquenet, Genis, Chapinal, Wiet Vroom, Tim
Blanchaert, Thomas Cools, Joost Decupere, Roel Aerts, Peter Deruytere,
Tomas Geurts; ON Semiconductor, Mechelen, Belgium.

(Revised
,
Slides)
16:55 – 17:15 11.06 Keynote Presentation: Many Pixels Make Light Work
Mike Tompsett 

(Slides)
18:30 – 20:30 Dinner and 2013 IISS Awards

Best Poster Award: Song Chen, et al.,
Digital Integration Sensor

Walter Kosonocky Award: K. Kitamura, et al.
A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor
With Column-Parallel Two-Stage Cyclic Analog-to-Digital
Converters

Exceptional Service Award to: Albert JP Theuwissen
“For exceptional contributions to the education of image sensor
specialists”

Exceptional Lifetime Achievement Award to: Gene
Weckler “For exceptional contributions to the field of solid-state
image sensors”

Sunday, June 16, 2013

7:00 – 8:30 Breakfast

Session 12

Global Shutter

Session chair: Albert Theuwissen (Harvest Imaging)

8:30 – 8:45 12.01 Low Noise High Efficiency 3.75 μm and 2.8 μm Global Shutter CMOS
Pixel Arrays

Sergey Velichko, Gennadiy Agranov, Jaroslav Hynecek, Scott Johnson,
Hirofumi Komori, Jenny Bai, Igor Karasev, Rick Mauritzson, Xianmin Yi,
Victor Lenchenkov, Sarah Zhao, Hyuntae Kim; Aptina, Meridian, ID, USA,
Aptina, San Jose, CA, USA. (Slides)
8:45 – 9:00 12.02 IR Enhanced Global Shutter Pixel for High Speed Applications
Assaf Lahav, Adi Birman, Dima Veinger, Amos Fenigstein, Dexue Zhang,
Daniel Van Blerkom; TowerJazz Semiconductor Ltd, Migdal Haemek, Israel;
Forza Silicon Corp., CA, USA.
9:00 – 9:15 12.03 3.5 μm global shutter pixel with transistor sharing and correlated
double sampling
B. Wolfs, J. Bogaerts, G. Meynants; CMOSIS nv, Antwerpen,
Belgium.
9:45 – 10:00 12.04 Global Shutter Pixel with Floating Storage Gate
Alex Krymski, Luxima Technology LLC/ Alexima, Pasadena, CA, USA.
9:30 – 9:45 12.05 High frame-rate global shutter image sensor with dual-reset branch
SAR ADC architecture

Daniel Van Blerkom, Jeff Rysinski, Yingying Wang, Kevin Stevulak,
Christophe Basset, Loc Truong, Rami Yassine, Guang Yang, Chao Sun, Kai
Ling Ong, Steve Huang, Forza Silicon Corporation, Pasadena, CA, USA.
9:45 – 10:00 12.06 A 4e-noise 2/3-inch global shutter 1920x1080P120 CM OS-Imager

Peter Centen, Steffen Lehr , Sabine Roth, Jeroen Rotte, Friedrich
Heizmann, Akbar Momin, Ralf Dohmen, Karl-Heinz Schaaf, Klaas Jan
Damstra, Ruud van Ree, Michael Schreiber; Grass Valley, Breda, The
Netherlands, Viimagic; Villingen, Germany.
10:00 – 10:25 Break

Session 13

Invited Presentation, Oversampling, and High Dynamic Range

Session co-chairs: Shigetoshi Sugawa (Tohoku University), Vladimir
Koifman (Analog Value)

10:25 – 10:45 13.01 Invited Presentation: Image Quality of Oversampling Cameras
Juha Alakarhu, Samu Koskinen, Eero Tuulos, Nokia Corporation, Camera
Technologies, Tempere, Finland.
10:45 – 11:00 13.02 Overcoming the Full Well Capacity Limit: High Dynamic Range Imaging
Using Multi – Bit Temporal Oversampling and Conditional Reset
Thomas Vogelsang, Michael Guidash, Song Xue, Rambus Inc, Sunnyvale,
CA, USA. (Slides)
11:00 – 11:15 13.03 A comparison of high dynamic range CIS technologies for automotive
applications
Johannes Solhusvik, Jiangtao Kuang, Zhiqiang Lin, Sohei Manabe, Jeong-Ho
Lyu, Howard Rhodes, OmniVision Technologies
11:15 – 11:30 13.04 An Overflow Photo-gate Pixel Enables High FWC and I mproved Proton
Radiation Tolerance in CMOS Pixels

Yannick
De Wit & Manuel Innocent, ON-Semiconductor, Mechelen, Belgium.
11:30 – 11:45 13.05 A CMOS HDR Imager with an Analog Local Adaptation
Gilles Sicard, Hassan Abbas, Hawraa Amhaz*, Hakim Zimouche**, Robin
Rolland, David Alleysson3; CNRS, G-INP, UJF, TIMA Laboratory, Grenoble,
France; CIME-Nanotech, Grenoble, France; CNRS, UPMF, LPNC Laboratory,
Grenoble, France; *Now with CEA LETI, **Now with LIRMM Laboratory,
Montpellier, France.
11:45 – 12:00 Wrap Up and Close Boyd Fowler, Co-Chair
12:00 – 13:30 Lunch