WALTER KOSONOCKY AWARD
Recipients
The IISS Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997.
Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop. The award committee solicits nominations biennially. The award is announced and presented at the Workshop. New! Nomination form for 2025 is here.
Year/Org. | Recipients | Recipients | Paper |
2023Canon Inc. | K. MorimotoJ. IwataM. Shinohara
H. Sekine A. Abdelghafar H. Tsuchiya Y. Kuroda K. Tojima W. Endo Y. Maehashi Y. Ota T. Sasago S. Maekawa |
S. HikosakaT. KanouA. Kato
T. Tezuka S. Yoshizaki T. Ogawa K. Uehira A. Ehara F. Inui Y. Matsuno K. Sakurai T. Ichikawa |
3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 20.2.1-20.2.4 |
2021STMicroelectronics, IMEP-LaHC, Univ. Grenoble Alpes, LNL, Univ. Claude Bernard Lyon, LETI-CEA Tech |
Francois RoyAndrej SulerThomas Dalleau Romain Daniel Jihane |
Yvon CazauxCatherine ChatonLaurent Montes Panagiota Guo-Neng |
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor ApplicationsMDPI Sensors, Vol.20, No3. Article No.727, pp.1-8, Jan 2020. |
2019Sony | Sozo YokogawaItaru OshiyamaHarumi Ikeda Yoshiki Tomoyuki |
Suguru SaitoTakashi OinoueYoshiya Hagimoto Hayato |
IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixelsScientific Reports, Vol. 7, Article No. 3832, pp. 1-9, June 2017. |
2017Microsoft | Cyrus S. BamjiPatrick O’ConnorTamer Elkhatib Swati Barry Lawrence A. Dane |
Onur Can AkkayaAndy DanielAndrew D. Payne Travis Mike Vei-Han |
A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADCIEEE JSSC, Vol. 50, No. 1, pp. 303-318, January 2015. |
2015Sony | Shunichi SukegawaTsutomu NakajimaKen Koseki Tsutomu Koji Keishi Takashi Teruo |
Taku UmebayashiHiroshi KawanobeIsao Hirota Masanori Toshifumi Hiroshi Yoshikazu Noriyuki |
A 1/4-inch 8Mpixel Back-Illuminated Stacked CMOS Image SensorISSCC Dig. Tech. Papers, pp. 484 – 485, Feb. 2013. |
2013NHKShizuoka University | Kazuya KitamuraToshihisa WatabeTakehide Sawamoto Tomohiko Tomoyuki Tetsuya Keigo |
Takashi WatanabeHiroshi ShimamotoHiroshi Ohtake Satoshi Shoji Norifumi |
A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital ConvertersIEEE Transactions On Electron Devices, 59(12), December 2012, pp. 3426-3433. |
2011Sony | Hayato WakabayashiKeiji YamaguchiMasafumi Okano Souichiro Oichi Seijiro Masamichi Masahiro Masaru Yuuki |
Takeshi ShikanaiKen KosekiKeiji Mabuchi Yasushi Kentaro Eiji Tomoyuki Masanori Tetsuo |
A 1/2.3-inch 10.3Mpixel 50 frame/s Back-Illuminated CMOS Image SensorProc. 2010 International Solid-State Circuits Conference (ISSCC), pp. 410-411, San Francisco, CA USA February 2010. |
2009Eastman Kodak |
Eric StevensHung DoanJeffery Kyan Gang Jian |
Hirofumi KomoriHiroaki FujitaChristopher Parks Cristian |
Low Crosstalk and Low Dark Current CMOS Image Sensor Technology Using a Hole-Based DetectorProc. International Solid-State Circuits Conference (ISSCC), pp.59-61 San Francisco, California USA February 2008. |
2007Sony | Satoshi YoshiharaYoshikazu NittaMasaru Kikuchi Ken Yoshiharu Yoshiaki Souichiro Hayato Masafumi |
Hiromi KuriyamaJunichi InutsukaAkari Tajima Tadashi Yoshiharu Fumihiko Yasuo Shinya Tetsuo |
A 1/1.8” 6.4 Mpixel 60 frames/s CMOS image sensor with seamless mode changeIEEE J. of Solid-State Circuits, vol. 41(12) December 2006 pp. 2998-3006 |
2005Micron Technology | Alex KrymskiNail Khaliullin |
Howard Rhodes |
A 2 Electron noise, 1.3. Megapixel CMOS SensorProc. 2003 IEEE Workshop on CCDs and Advanced Image Sensors, May 15-17, 2003 Bavaria, Germany |
2003Texas Instruments | Jaroslav Hynecek |
Impactron – A New Solid State Image IntensifierIEEE Trans. Electron Devices, vol. 48(10) Oct. 2001 pp. 2238-2241 | |
2001Fujifilm | Tetsuo YamadaKatsumi IkedaYong-Gwan Kim Hideki Tetsuo Tomohiro |
Kazuki OgawaEiichi OkamotoKazuyuki Masukane Kazuya Masafumi |
A Progressive Scan CCD Image Sensor for DSC ApplicationsIEEE J. Solid-State Circuits, vol. 35(12) Dec. 2000 pp. 2044-2054 |
1999Philips | Jan BosiersAgnes KleimannArjen Vander Sijde Laurens Daniel |
Herman PeekEdwin RoksAnco Heringa Frans Peter |
A 2/3” 2M pixel progressive scan FT-CCD for digital still camera applicationsProc. 1998 IEEE International Electron Devices Meeting, pp. 37-40 |