WALTER KOSONOCKY AWARD

Recipients

The IISS Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997.

Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop. The award committee solicits nominations biennially. The award is announced and presented at the Workshop. New! Nomination form for 2025 is here.

Year/Org. Recipients Recipients Paper
2023Canon Inc. K. MorimotoJ. IwataM. Shinohara

H. Sekine

A. Abdelghafar

H. Tsuchiya

Y. Kuroda

K. Tojima

W. Endo

Y. Maehashi

Y. Ota

T. Sasago

S. Maekawa

S. HikosakaT. KanouA. Kato

T. Tezuka

S. Yoshizaki

T. Ogawa

K. Uehira

A. Ehara

F. Inui

Y. Matsuno

K. Sakurai

T. Ichikawa

3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 20.2.1-20.2.4
2021STMicroelectronics, IMEP-LaHC, Univ. Grenoble Alpes,
LNL, Univ. Claude Bernard Lyon, LETI-CEA Tech
Francois
RoyAndrej
SulerThomas
Dalleau

Romain
Duru

Daniel
Benoit

Jihane
Arnaud

Yvon
CazauxCatherine
ChatonLaurent
Montes

Panagiota
Morfouli

Guo-Neng
Lu

Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor ApplicationsMDPI Sensors, Vol.20, No3. Article No.727, pp.1-8, Jan 2020.
2019Sony Sozo
YokogawaItaru
OshiyamaHarumi
Ikeda

Yoshiki
Ebiko

Tomoyuki
Hirano

Suguru
SaitoTakashi
OinoueYoshiya
Hagimoto

Hayato
Iwamoto

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixelsScientific Reports, Vol. 7, Article No. 3832, pp. 1-9, June 2017.
2017Microsoft Cyrus S.
BamjiPatrick
O’ConnorTamer
Elkhatib

Swati
Mehta

Barry
Thompson

Lawrence A.
Prather

Dane
Snow

Onur Can
AkkayaAndy
DanielAndrew D.
Payne

Travis
Perry

Mike
Fenton

Vei-Han
Chan

A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADCIEEE JSSC, Vol. 50, No. 1, pp. 303-318, January 2015.
2015Sony Shunichi
SukegawaTsutomu
NakajimaKen
Koseki

Tsutomu
Haruta

Koji
Fukumoto

Keishi
Inoue

Takashi
Nagano

Teruo
Hirayama

Taku
UmebayashiHiroshi
KawanobeIsao
Hirota

Masanori
Kasai

Toshifumi
Wakano

Hiroshi
Takahashi

Yoshikazu
Nitta

Noriyuki
Fukushima

A 1/4-inch 8Mpixel Back-Illuminated Stacked CMOS Image SensorISSCC Dig. Tech. Papers, pp. 484 – 485, Feb. 2013.
2013NHKShizuoka University Kazuya
KitamuraToshihisa
WatabeTakehide
Sawamoto

Tomohiko
Kosugi

Tomoyuki
Akahori

Tetsuya
Iida

Keigo
Isobe

Takashi
WatanabeHiroshi
ShimamotoHiroshi
Ohtake

Satoshi
Aoyama

Shoji
Kawahito

Norifumi
Egami

A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital ConvertersIEEE Transactions On Electron Devices, 59(12), December 2012, pp. 3426-3433.
2011Sony Hayato
WakabayashiKeiji
YamaguchiMasafumi
Okano

Souichiro
Kuramochi

Oichi
Kumagai

Seijiro
Sakane

Masamichi
Ito

Masahiro
Hatano

Masaru
Kikuchi

Yuuki
Yamagata

Takeshi
ShikanaiKen
KosekiKeiji
Mabuchi

Yasushi
Maruyama

Kentaro
Akiyama

Eiji
Miyata

Tomoyuki
Honda

Masanori
Ohashi

Tetsuo
Nomoto

A 1/2.3-inch 10.3Mpixel 50 frame/s Back-Illuminated CMOS Image SensorProc. 2010 International Solid-State Circuits Conference (ISSCC), pp. 410-411, San Francisco, CA USA February 2010.
2009Eastman
Kodak
Eric
StevensHung
DoanJeffery
Kyan

Gang
Shi

Jian
Wu

Hirofumi
KomoriHiroaki
FujitaChristopher
Parks

Cristian
Tivarus

Low Crosstalk and Low Dark Current CMOS Image Sensor Technology Using a Hole-Based DetectorProc. International Solid-State Circuits Conference (ISSCC), pp.59-61 San Francisco, California USA February 2008.
2007Sony Satoshi
YoshiharaYoshikazu
NittaMasaru
Kikuchi

Ken
Koseki

Yoshiharu
Ito

Yoshiaki
Inada

Souichiro
Kuramochi

Hayato
Wakabayashi

Masafumi
Okano

Hiromi
KuriyamaJunichi
InutsukaAkari
Tajima

Tadashi
Nakajima

Yoshiharu
Kudoh

Fumihiko
Koga

Yasuo
Kasagi

Shinya
Watanabe

Tetsuo
Nomoto

A 1/1.8” 6.4 Mpixel 60 frames/s CMOS image sensor with seamless mode changeIEEE J. of Solid-State Circuits, vol. 41(12) December 2006 pp. 2998-3006
2005Micron Technology Alex
KrymskiNail
Khaliullin
Howard
Rhodes
A 2 Electron noise, 1.3. Megapixel CMOS SensorProc. 2003 IEEE Workshop on CCDs and Advanced Image Sensors, May 15-17, 2003 Bavaria, Germany
2003Texas Instruments Jaroslav
Hynecek
Impactron – A New Solid State Image IntensifierIEEE Trans. Electron Devices, vol. 48(10) Oct. 2001 pp. 2238-2241
2001Fujifilm Tetsuo
YamadaKatsumi
IkedaYong-Gwan
Kim

Hideki
Wakoh

Tetsuo
Toma

Tomohiro
Sakamoto

Kazuki
OgawaEiichi
OkamotoKazuyuki
Masukane

Kazuya
Oda

Masafumi
Inuiya

A Progressive Scan CCD Image Sensor for DSC ApplicationsIEEE J. Solid-State Circuits, vol. 35(12) Dec. 2000 pp. 2044-2054
1999Philips Jan
BosiersAgnes
KleimannArjen
Vander Sijde

Laurens
Korthout

Daniel
Verbugt

Herman
PeekEdwin
RoksAnco
Heringa

Frans
Vledder

Peter
Opmeer

A 2/3” 2M pixel progressive scan FT-CCD for digital still camera applicationsProc. 1998 IEEE International Electron Devices Meeting, pp. 37-40