WORKSHOP PAPER
A 600×600 Pixel, 500 fps CMOS Image Sensor with a 4.4μm Pinned Photodiode 5-Transistor Global Shutter Pixel
I. Takayanagi1, Y. Mo2, H. Ando1, K. Kawamura1, N. Yoshimura1, K. Kimura1, T. Otaka1, S. Matsuo1, T. Suzuki1, F. Brady2, J. Nakamura1
1Micron Japan, Ltd., 4-2-8 Shibaura, Minato-ku, Tokyo 108-0023, Japan
2Micron Technology, Inc., 251 South Lake Avenue, Suite 600, Pasadena, CA 91101-1101, USA

Abstract

In this paper, we present a 600×600 pixel prototype imager with a 4.4μm pitch 5-transistor global shutter pixel that operates at a high frame rate of 500fps. The design and development of a low-cost image sensor maintaining a high frame rate through pixel size reduction and efficient signal readout are described. Architecture, pixel configuration, operation, and characterization results of this image sensor are discussed in detail.
Publisher: IISS (Int. Image Sensors Society)
Year: 2007
Workshop: IISW
URL: https://doi.org/10.60928/08j1-n8hq
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Keywords

global shutter, CMOS image sensor, high frame rate,

References

1) A. I. Krymski and N. Tu, "A 9-V/lux-s 5000-frames/s 512 ×512 CMOS sensor", IEEE Trans. ED., 2003. https://doi.org/10.1109/ted.2002.806958
2) N. Bock, et al., "A CMOS image sensor with global shutter and extended dynamic range", Final Program and Proceedings of ICIS ’06 Int’l Congress of Imaging Science, 2006. https://doi.org/10.1109/icecs.2006.379788
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