WORKSHOP PAPER
Interface State Generation by Substrate Injection Through the Transfer Gate
Abstract
This paper discusses Fowler-Nordheim stress induced dark current generation via a substrate electron injection at the Transfer Gate in a 4T pixel CMOS image sensor. It has been reported that substrate injection causes less damage to the Si-SiO2 interface compared to electron injection from the gate. However, the stress effect on dark current from Fowler-Nordheim substrate injection can be enhanced at high temperatures, large bias levels, and longer stress times. Negative bias on the Transfer Gate is confirmed to effectively suppress the increased dark current generated at the damaged Si-SiO2 interface underneath the Transfer Gate.Keywords
Fowler-Nordheim stress, dark current, 4T pixel CMOS image sensor,References
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