WORKSHOP PAPER
Curved CMOS Image Sensors Using SOI Layer Transfer Technology
Masahide Goto1, Shigeyuki Imura1, Hiroto Sato1
1NHK Science & Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan

Abstract

We report the development of curved complementary metal-oxide-semiconductor image sensors (CISs) using silicon-on-insulator (SOI) layer transfer technology. A 11-μm-thick device layer was transferred to a flexible substrate and mounted on a cylindrical concave stage. The curved CISs successfully operated to correct lens aberration, thereby promising next-generation high-quality flexible imaging devices.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/13tz-fbqf
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Keywords

curved, CMOS, image sensors, SOI layer transfer technology, flexible substrate, cylindrical concave stage, lens aberration, flexible imaging devices,

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