WORKSHOP PAPER
A 0.5μm pixel-pitch 200-Megapixel CMOS Image Sensor with Partially Removed Front Deep Trench Isolation for Enhanced Noise Performance and Sensitivity
Abstract
A high-resolution CMOS image sensor is essential in the mobile imaging industry, as a high pixel count enables the capture of finer details and ensures superior image quality under various zoom conditions. Front deep trench isolation (FDTI) technology is a promising solution for achieving this, as it allows submicron-sized pixels to maintain high full-well capacity (FWC) and a high dynamic range (HDR). This paper presents a 200-megapixel (Mp) CMOS image sensor featuring a 0.5μm unit pixel size in the quad-cell (Q-cell) FDTI structure. The structure includes various technologies that enhance FWC, temporal noise (TN), and sensitivity performance.Keywords
CMOS, image sensor, pixel-pitch, 200-Megapixel, Front Deep Trench Isolation, noise performance, sensitivity,References
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