WORKSHOP PAPER
Custom CMOS Image Sensor for Use in an Extreme Low Light Level Electron Bombarded CIS
Verle Aebi1, Kenneth Costello1, Edward Yin1, Kevin Roderick1, Emil Wilke1, Lidiya Polukhina1, Bruce True1, Selim Bencuya1, Rudolph Benz1, Steve Huang2, Daniel Van Blerkom2, Loc Truong2, Sam Bagwell2, Wilson Law2, Tim Lu2
1EOTech, LLC., 3580 Bassett Street, Santa Clara, CA 95054 USA
2Forza Silicon (AMETEK Inc.), 2947 Bradley Street, Suite 130, Pasadena, CA 91107 USA

Abstract

EOTech and Forza have developed a Backside Illuminated CIS (BSI-CIS) optimized for use in low light level imaging cameras. The MV3.7 CIS has a 9.1 µm pixel, 1920 x 1920 pixel format, 160 Hz frame rate, and 16-bit dynamic range based on a LOFIC pixel architecture. This BSI-CIS has been incorporated as the electron bombarded anode in the ISIE19 Electron Bombarded Active Pixel Sensor (EBAPS) for use in low light level cameras. The ISIE19 EBAPS is the most recent member of the EOTech EBAPS product family, beginning in 2004. Results include electron bombarded gain, single photon detection, and low light level high dynamic range imagery optimized with a local tone mapping algorithm.
Publisher: IISS (Int. Image Sensors Society)
Year: 2023
Workshop: IISW
URL: https://doi.org/10.60928/380t-xn6n
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Keywords

EBS gain process, LOFIC pixel architecture, low light level imaging,

References

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