WORKSHOP PAPER
Design Consideration of Front Deep Trench Isolation (FDTI) in Small-pitch, Dual-Photodiode Pixels
Jonghyun Go1, Keunyeong Cho1, Changkyu Lee1, Jinyoung Kim1, Yongsang Park1, Minkwan Kim1, Taehoon Kim1, Jiyoun Song1, Dami Park1, Sooyeon Kim1, Gyunha Park1, Hyuk Hur1, Jae Ho Kim2
1CIS Tech. Development Team, Semiconductor R&D Center, Hwaseong-si, Republic of Korea
2Computational Science and Engineering Team, Innovation Center, Samsung Electronics, Hwaseong-si, Republic of Korea

Abstract

In CMOS image sensors, Front Deep Trench Isolation (FDTI) is a unique structure governing both the electrical performance as well as the optical properties of a given pixel. This paper explores two distinct FDTI layouts of submicron dual-photodiode pixels and their impact on pixel characteristics with phenomenological models.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/4j9l-eft9
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Keywords

Front Deep Trench Isolation, FDTI, CMOS image sensors,

References

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[2]) D. Kim et.al., "D. Kim et.al., 'A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation,' 2024 IEEE International Solid-State Circuits Conference (ISSCC).", 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024. https://doi.org/10.1109/isscc49657.2024.10454448
[3]) K. Zaitsu et.al., "K. Zaitsu et.al., 'A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency,' 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).", 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022. https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830372