WORKSHOP PAPER
An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS
Eric A. G. Webster1, Justin A. Richardson2,3, Lindsay A. Grant4, David Renshaw2, Robert K. Henderson1
1Institute for Integrated Micro and Nano Systems, School of Engineering, The University of Edinburgh, King's Buildings, Mayfield Road, Edinburgh, U.K., EH9 3JL
2The University of Edinburgh,
3Dialog Semiconductor,
4ST Microelectronics (R&D) Ltd., 33 Pinkhill, Edinburgh, U.K., EH12 7BF

Abstract

A Single-Photon Avalanche Diode (SPAD) is reported in 90nm CMOS imaging technology with a peak photon detection efficiency (PDE) of ≈44% at 690nm and better than ≈20% at 850nm. This represents an eight-fold improvement in near infrared sensitivity over existing SPAD structures. This result has important implications for optical communications, time-of-flight ranging and optical tomography applications. The 6.4µm active diameter SPAD also achieves low dark count rates of typically around 100Hz with ≈51ps FWHM timing resolution; and a low after-pulsing probability of ≈0.375%. The new SPAD structure employs the junction between deep n-well and the p-substrate rather than being fabricated inside its own well, and is in theory compatible with low-resistivity substrate and thin epi-layer CMOS technology and backside illumination.
Publisher: IISS (Int. Image Sensors Society)
Year: 2011
Workshop: IISW
URL: https://doi.org/10.60928/4ym3-y610
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Keywords

Single-Photon Avalanche Diode, CMOS imaging technology, Photon detection efficiency,

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