WORKSHOP PAPER
Event-Driven Correlated Double Sampling for Pulse-Frequency-Modulation A/D Converters Integrated in Pixel-Parallel Image Sensors
Masahide Goto1, Yuki Honda1, Toshihisa Watabe1, Kei Hagiwara1, Masakazu Nanba1, Yoshinori Iguchi1, Takuya Saraya2, Masaharu Kobayashi2, Eiji Higurashi2, Hiroshi Toshiyoshi2, Toshiro Hiramoto2
1NHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
2The University of Tokyo, Tokyo, Japan

Abstract

This study reports a novel event-driven correlated double sampling (CDS) technique for pulse-frequency-modulation (PFM) analog-to-digital converters (ADCs), which are promising for pixel-parallel 3-D integrated image sensors with excellent imaging performance. The developed ADC with CDS includes comparators, capacitors, and timing control logic circuits designed to generate the triggered clocks to cancel kTC noise in a pixel. The prototype ADC showed noise reduction effects and exhibited an excellent linearity with a wide dynamic range of 120 dB, indicating the feasibility of high-quality pixel-wise image sensors.
Publisher: IISS (Int. Image Sensors Society)
Year: 2017
Workshop: IISW
URL: https://doi.org/10.60928/5oyn-a6uk
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Keywords

Event-Driven Correlated Double Sampling, Pulse-Frequency-Modulation A/D Converters, Pixel-Parallel 3-D Integrated Image Sensors,

References

1) R. Funatsu et al., "133Mpixel 60fps CMOS Image Sensor with 32-Column Shared High-Speed Column-Parallel SAR ADCs", IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC), 2015. https://doi.org/10.1109/isscc.2015.7062951
2) M. Goto et al., "Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by Direct Bonding of SOI Layers", IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., 2014. https://doi.org/10.1109/iedm.2014.7046980
3) M. Goto et al., "Pixel-Parallel 3-D Integrated CMOS Image Sensors With Pulse Frequency Modulation A/D Converters Developed by Direct Bonding of SOI Layers", IEEE Trans. Electron Devices, 2015. https://doi.org/10.1109/ted.2015.2425393
4) M. Goto et al., "In-Pixel A/D Converters with 120-dB Dynamic Range Using Event-Driven Correlated Double Sampling for Stacked SOI Image Sensors", Proc. IEEE SOI-3D-Subthreshold Microelectron. Technol. Unified Conf. (S3S) Conf., 2016. https://doi.org/10.1109/s3s.2016.7804399
5) M. Goto et al., "A Three-Dimensional Integration Technology with Embedded Au Electrodes for stacked CMOS Image Sensors", Proc. 2015 Int. Image Sensor Workshop (IISW), 2015. https://doi.org/10.60928/r092-rqh5
6) F. Andoh, H. Shimamoto, Y. Fujita, "A Digital Pixel Image Sensor for Real-Time Readout", IEEE Trans. Electron Devices, 2000. https://doi.org/10.1109/16.877174
7) M. White et al., "Characterization of charge-coupled device line and area-array imaging at low light levels", IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC), 1973. https://doi.org/10.1109/isscc.1973.1155159
8) J. Hynecek, "A New Device Architecture Suitable for High-Resolution and High-Performance Image Sensors", IEEE Trans. Electron Devices, 1988. https://doi.org/10.1109/16.2508