WORKSHOP PAPER
Near Infrared Quantum Efficiency Simulations for CMOS Image Sensors
Abstract
This paper presents results of 3D finite-difference-time-domain (FDTD) simulations for predicting Near Infrared (NIR) Quantum Efficiency (QE) of complementary metal oxide semiconductor (CMOS) image sensors. The simulations aimed to set up and analyse a Central Composite Design (CCD) design of experiment (DOE) with factors of pixel pitch varying from 1.5um to 3.5um, epitaxial silicon substrate thickness varying from 3um to 8um, and number of inverted pyramids per pixel varying from 1 to 36. NIR QE at wavelengths of 850nm and 940nm is predicted and compared to products on the market while discussing factors to further increase NIR QE.Keywords
near infrared, quantum efficiency, inverted pyramids, CMOS image sensor,References
1) SAS Institute Inc., "JMP 14.3", Cary, NC, 1989-2021
2) , "ANSYS Lumerical FDTD, Release 2022R1.4"
3) Martin A. Green, "'Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients'", Solar Energy Materials and Solar Cells, 2008. https://doi.org/10.1016/j.solmat.2008.06.009
4) Tech Insights, "2021 Image Sensor Device Essentials (DEF) Annual Seminar", 2021
5) TechInsights, "OmniVision OS05A20 Device Essentials Plus Summary", DEP-1810-801, 2018
6) J.-K. Lee et al., ""5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology,"", 2020 IEEE International Solid-State Circuits Conference - (ISSCC), 2020. https://doi.org/10.1109/isscc19947.2020.9063092
7) O. Skorka, S. Micinski, A. Perkins, B. Gravelle, X. Li, R. Ispasoiu, ""1.4um pixel, 8MPixel, thick epi image sensor for RGB-IR imaging,"", 2021 International Image Sensor Workshop, 2021