WORKSHOP PAPER
Backside Illuminated Hybrid FPA achieving Low Cross-Talk combined with High QE
Abstract
This work delineates the development and performance attributes of backside-thinned fully-hybrid CMOS imagers with an emphasis on achieving a high quantum efficiency (QE) while simultaneously mitigating the issue of electrical cross-talk between pixels, which is particularly pronounced in backside illuminated (BSI) imagers. By innovating in the use of dopant graded epitaxial substrates and high aspect ratio trenches, the research shows significant advancements in reducing cross-talk without compromising on QE, thereby addressing a critical challenge in imager design.Keywords
Quantum Efficiency, Cross-Talk, Backside Illuminated CMOS Imagers,References
1) P.Rao et al., "Monolithic and Fully-Hybrid Backside Illuminated CMOS Imagers for Smart Sensing", Proceedings of International Image Sensor Workshop, 2009. https://doi.org/10.60928/d65e-cknb
2) K. De Munck, et al., "High performance hybrid and monolithic backside thinned CMOS imagers realized using a new integration process", IEEE International Electron Devices Meeting, 2006. https://doi.org/10.1109/iedm.2006.346979
3) K. Minoglou, et al., "Reduction of electrical crosstalk in hybrid backside illuminated CMOS imagers using deep trench isolation", IEEE International Interconnect Technology Conference, 2008. https://doi.org/10.1109/iitc.2008.4546945
4) Koen De Munck et al., "Backside thinned CMOS imagers with high broadband quantum efficiency realized using a new integration process", Electronics Letters, 2008. https://doi.org/10.1049/el:20082812