WORKSHOP PAPER
A customized 110nm CMOS process for large-area radiation detection and imaging
Abstract
This contribution presents a customized 110nm CMOS process tailored for the fabrication of pixel sensors on fully-depleted High-Resistivity (HR) substrates for radiation imaging applications. The test devices integrated in the first two fabrication runs, having three different values of active thickness, 48 μm, 100 μm and 200 μm, are described, and the main results obtained from their electrical and functional characterization are summarized.Keywords
CMOS process customization, radiation imaging, pixel sensors,References
1) N. Wermes, "Pixel detectors... where do we stand?", Nucl. Instrum. Methods Phys. Res. A, 2019. https://doi.org/10.1016/j.nima.2018.07.003
2) W. Snoeys et al., "PIN detector arrays and integrated readout circuitry on high-resistivity float-zone silicon", IEEE Tran. Electron Devices, 1994. https://doi.org/10.1109/16.293300
3) R. Turchetta et al., "A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology", Nucl. Instrum. Methods Phys. Res. A, 2001. https://doi.org/10.1016/s0168-9002(00)00893-7
4) H. Pernegger et al., "First Tests of a Novel Radiation Hard CMOS Sensor Process for Depleted Monolithic Active Pixel Sensors", J. Inst., 2017. https://doi.org/10.1088/1748-0221/12/06/p06008
5) S. Lauxtermann, V. Vangapally, "A Fully Depleted Backside Illuminated CMOS Imager with VGA Resolution and 15 micron Pixel Pitch", Proc. IISW 2013
6) K. D. Stefanov et al., "Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias", Proc. IISW 2017. https://doi.org/10.1109/led.2016.2625745
7) Y. Arai et al., "Developments of SOI Monolithic Pixel Detectors", Nuclear Instr. Meth. Phys. Res. A, 2010
8) L. Pancheri, et al., "Fully Depleted MAPS in 110-nm CMOS Process With 100 — 300 μm Active Substrate", IEEE Trans. Electron. Devices, 2020. https://doi.org/10.1109/ted.2020.2985639