WORKSHOP PAPER
3.5 µm global shutter pixel with transistor sharing and correlated double sampling
Abstract
This paper reports on a global shutter pixel with in-pixel voltage domain sampling of the signal and reset levels and 3.5 µm pixel pitch. By employing a CMOS image sensor process with 110 nm front-end and 90 nm back-end design rules and implementing transistor sharing between two neighboring pixels, it was possible to shrink the pixel dimensions to 3.5 µm pixel pitch.Keywords
global shutter pixel, transistor sharing, correlated double sampling,References
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