WORKSHOP PAPER
Two-Stage Charge Transfer Pixel Using Pinned Diodes for Low-Noise Global Shutter Imaging
Abstract
This paper describes a new type of global electronic shutter pixel for CMOS image sensors. A global electronic shutter is necessary for imaging fast-moving objects without motion blur or distortion. The proposed pixel has two potential wells with pinned diode structure for two-stage charge transfer that enables a global electronic shuttering and reset noise canceling.Keywords
CMOS image sensor, Global electronic shutter, High-speed,References
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