WORKSHOP PAPER
Polarization-analyzing CMOS image sensor with embedded wire-grid polarizers
Takashi Tokuda1, Hirofumi Yamada1, Hiroya Shimohata1, Kiyotaka Sasagawa1, Jun Ohta1
1Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0192, JAPAN

Abstract

In this work, a polarization-analyzing CMOS sensor based on image sensor architecture was proposed and demonstrated. The sensor features a monolithically embedded polarizer, designed with a prototype sensor equipped with a polarization-analyzing pixel array. Embedded polarizers with different angles were implemented to realize a real-time absolute measurement of incident polarization angle. The functionality and performance of the designed polarization-analyzing CMOS image sensor were characterized, including experimental polarimetric measurements of chiral solution with the fabricated sensor.
Publisher: IISS (Int. Image Sensors Society)
Year: 2009
Workshop: IISW
URL: https://doi.org/10.60928/aplt-59kv
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Keywords

Polarization analyzing, CMOS image sensor, Embedded polarizers,

References

1) Z. Y. Yang, and Y. F. Lu, "Broadband nanowire-grid polarizers in ultraviolet-visible-near- infrared regions", Optics Express, 2007. https://doi.org/10.1364/oe.15.009510
2) T. Tokuda, S. Sato, H. Yamada, K. Sasagawa, and J. Ohta, "Polarization- analyzing CMOS photosensor with monolithically embedded wire grid polarizer", Electronics Letters, 2009. https://doi.org/10.1049/el:20093132
3) J. Raynor, "Polarization sensitive solid state image sensor including integrated photodetector and polarizing assembly and associated methods", US patent 7186968, March 2007