WORKSHOP PAPER
A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, rms Read Noise, 80 μV/e- CG and >80 % VIS-QE
Andreas Süss1, Linkun Wu1,2, Jean-Luc Bacq1, Annachiara Spagnolo1, Philippe Coppejans1, Vasyl Motsnyi1, Luc Haspeslagh1, Jonathan Borremans1, Maarten Rosmeulen1
1imec, Kapeldreef 75, B-3001 Leuven, Belgium
2Vrije Universiteit Brussel, Brussels, Belgium

Abstract

Imec is developing a CMOS compatible platform for fully depleted image sensors. Full depletion allows enhancement of the charge collection speed in photodetectors. A 48x48 pixel test array with 52 μm pitch has been developed in this technology. An initial evaluation is presented in this paper. The device achieves 7 e-rms read noise at 80 μV/e- conversion gain. The mean charge transfer time is estimated to 6 ns. QE in the visible is expected to be >80 %.
Year: 2017
Workshop: IISW
URL: https://doi.org/10.60928/atn9-tpr8
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Keywords

CMOS image sensors, full depletion, charge collection speed,

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