WORKSHOP PAPER
Study on the Characteristics of Strain according to the dark effect in 1.12u Pixel
Abstract
This study investigates the strain according to the dark characteristic of 13M pixel using 90nm BSI process. It confirms the change in dark characteristics with and without attack in the floating diffusion (FD) region through Wafer Test (WT) and Electrical measurement. The study uses HR-TEM for qualitative confirmation of Si interface characteristic and Top spin analysis for quantitatively comparing characteristic differences. The findings reveal that the strain applied to Si changes from compressive to tensile when Si damage occurs, with dark defects in WT increasing significantly with the application of the FD region Ge imp.Keywords
Local strain, CMOS image sensor, Hot pixel, Top spin,References
1) E. R. Fossum, "CMOS image sensors: electronic camera-on-a-chip", IEEE Trans. Electron Devices, 1997. https://doi.org/10.1109/16.628824
2) B. Pain, et al., "A Back-illuminated Megapixel CMOS Image Sensor", Proc. 2005 Workshop on CCD and Advanced Image Sensors, 2005
3) T. Ohchi, et al., "Reducing Damage to Si Substrates during Gate Etching Processes", Jpn. J. Appl. Phys., 2008. https://doi.org/10.1143/jjap.47.5324
4) Y. Nakakubo, et al., "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged silicon Surface Structures and its Impact on in-line Monitoring", Jpn. J. Appl. Phys., 2010. https://doi.org/10.1143/jjap.49.08jd02
5) D. McGrath, et al., "Dark Current Limiting Mechanisms in CMOS Image sensors", Electronic Imaging, Image Sensors and Imaging systems, 2018. https://doi.org/10.2352/issn.2470-1173.2018.11.imse-354
6) Y. Nakakubo, et al., "Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate", ECS JSS, 2015. https://doi.org/10.1149/2.0121506jss
7) , http://pd.chem.ucl.ac.uk/pdnn/peaks/size.htm