WORKSHOP PAPER
Towards Infrared Spectral Extension of CMOS Image Sensors
Kaitlin M. Anagnost1, Xiaoxin Wang1, Jifeng Liu1, Eric R. Fossum1
1Thayer School of Engineering, Dartmouth College, Hanover, NH, USA

Abstract

A new structural integration scheme for p-type infrared (IR) absorbers directly on silicon (Si)-based CMOS image sensors with type-II band alignment is proposed and explored by calculation as an alternative to HgCdTe and other hybridized IR detectors. While HgCdTe is a material of choice for many IR detectors, its challenging manufacturing process and thermal reliability, among other factors, prove detrimental to some applications. Si-based sensors with directly deposited IR absorbing layers may be a suitable alternative. The band structures for the IR absorbing materials Ge0.89Sn0.11 and In0.1Ga0.9Sb on Si are calculated and analyzed. Detector parameters including dark current, target wavelength, quantum efficiency (QE), and others, are also calculated to explore this approach in concert with separate experimental fabrication and measurement.
Publisher: IISS (Int. Image Sensors Society)
Year: 2023
Workshop: IISW
URL: https://doi.org/10.60928/by18-5vod
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Keywords

CMOS image sensor, Non-visible, Spectral extension, IR,

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