WORKSHOP PAPER
Advanced Active Deep Trench Designs for Enhanced Charge Transfer Performances in CCD-on-CMOS Image Sensor
Antoine Salih Alj1,2,3,4,5, Pierre Touron, Jean-Pierre Carrère, Stéphane Demiguel, Cédric Virmontois, Valérian Lalucaa, Julien Michelot, Pierre Magnan, Vincent Goiffon
1ISAE-SUPAERO, 10 Av. Edouard Belin, Toulouse, France
2STMicroelectronics, 850 Rue Jean Monet, Crolles, France
3Thales Alenia Space, 5 All. Des Gabians, Cannes, France
4CNES, 18 Av. Edouard Belin, Toulouse, France
5Pyxalis, 170 Rue de Chatagnon, Moirans, France

Abstract

New designs of active deep trench (CDTI) CCD-on-CMOS are described and characterized: A two-phase pixel with a built-in electric field, enabling highly efficient charge transfer with minimum dark current, and a novel four-phase pixel. The effects of pixel pitch and transfer time are discussed.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/ctz9-jb9y

Keywords

Charge transfer, CDTI, CCD-on-CMOS, Pixel pitch, Transfer time,

References

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