WORKSHOP PAPER
Mid-infrared Detection using Black Phosphorus on Silicon Heterostructure with Avalanche Multiplication
Yen-Ju Lin1, Chien-Yu Chen2, Chang-Hua Liu1, Neil Na2
1Institution of Photonics Technology, National Tsing-Hua University, Hsinchu, Taiwan (R.O.C.)
2Artilux Inc., Hsinchu, Taiwan (R.O.C.)

Abstract

An analytical method is proposed to design high-responsivity and high-speed mid-infrared (MIR) detection device with avalanche multiplication. The device is a separated absorption, charge, and multiplication avalanche photodiode (SACM APD) using bulk black phosphorus-on-silicon. The device achieves 1000x bandwidth improvement and high gain-bandwidth product with high responsivity as 2.75 A/W compared to other two-dimensional materials (2DM) on silicon heterostructures.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/dqhp-3t4l
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Keywords

mid-infrared, APD, 2D materials, black phosphorus,

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