WORKSHOP PAPER
10µm Radiation Tolerant Global Shutter Pixel for Operation under High Ionizing Dose Rates of Gamma or X-ray Radiation
Pedro Santos1, Idham Hafizh1, Paul Leroux1, Guy Meynants1
1KU Leuven, Electronic Circuits and Systems (ECS), Geel Campus, Kleinhoefstraat 4, 2440 Geel, Belgium

Abstract

A 10x10 µm² radiation-tolerant voltage domain global shutter pixel with radiation hardened by design (RHBD) devices modification is developed to operate under high ionizing dose rates and high total ionizing dose (TID) levels. The pixel design is demonstrated to operate up to 1MGy, 100Mrad (SiO2) TID, with minimal degradation. The global shutter pixel also includes correlated double sampling (CDS) to reduce noise and collected carriers generated by the flux of gamma or x-ray radiation. Combined with an external flash, global shutter operation allows short exposures, which limits the impact of radiation on dark current and dynamic range. The pixel is designed using 180nm CMOS Image Sensor (CIS) technology.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/dvdc-vkz4
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Keywords

CMOS Image Sensors, Total Ionizing Dose (TID), Global Shutter, Xray,

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