WORKSHOP PAPER
Experimental Comparison of MOSFET and JFET 1.1μm Pitch Jots in 1Mjot Stacked BSI Quanta Image Sensors
Jiaju Ma1, Saleh Masoodian1, Tzu-Jui Wang2, Eric R. Fossum1
1Thayer School of Engineering at Dartmouth College, Hanover, NH, USA
2Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan

Abstract

This paper reports on the design, characterization, and comparison of MOSFET and JFET-based QIS readout. Each type of specialized pixel (or “jot”) was realized in a 1Mjot array, and 20 different 1Mjot arrays were fabricated together on one stacked BSI chip (20Mjot total).
Publisher: IISS (Int. Image Sensors Society)
Year: 2017
Workshop: IISW
URL: https://doi.org/10.60928/ea97-hk52
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Keywords

Quanta image sensor, MOSFET, JFET,

References

1) E. R. Fossum, "The quanta image sensor (QIS): concepts and challenges", Proc. 2011 Opt. Soc. Am. Topical Meeting on Computational Optical Sensing and Imaging, Toronto, Canada July 10-14, 2011., 2011. https://doi.org/10.1364/cosi.2011.jtue1
2) E. R. Fossum, "What to do with sub-diffraction-limit (SDL) pixels?–A proposal for a gigapixel digital film sensor (DFS)", Proc. IEEE Workshop on CCDs and Adv. Image Sensors, Sep. 2005, pp. 214-217., 2005
3) E. R. Fossum, "Photon counting error rates in single-bit and multi-bit quanta image sensors", IEEE J. Electron Devices Soc., vol. 4, no. 3, pp. 136-143. Mar. 2016., 2016. https://doi.org/10.1109/jeds.2016.2536722