WORKSHOP PAPER
A 2.1μm High Dynamic Range CMOS Image Sensor with Sub-pixel and Lateral Overflow Integration Capacitor Architecture
Shunta Noguchi1, Satoko Iida1, Naoya Sato1, Shinichiro Izawa2, Takayuki Yamanaka2, Nan Jiang2, Yorito Sakano1, Yusuke Oike1
1Sony Semiconductor Solutions Corp., Research Division 1, Kanagawa, Japan
2Sony Semiconductor Manufacturing Corp., Mobile Device Development Division 2, Nagasaki, Japan

Abstract

Abstract— This is a report on an Automotive CMOS image sensor using a pixel architecture of 2.1μm Sub-pixel and Lateral Overflow Integration Capacitor (LOFIC) readout, which consists of a large and small PD with intra-pixel capacitance. This sensor has a pixel pitch of 2.1 µm and is equipped with a Sub-Pixel with two photodiodes, one large and one small, and a MOS capacitor Floating Capacitor (FC) and a MOM capacitor Extra Capacitor (EC) in the pixel, and by connecting four signals in a single exposure, it has both a High Dynamic Range (HDR) of 105 dB and LED Flicker Mitigation (LFM), Motion artifact free.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/g22r-gyff
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Keywords

CMOS Image Sensor, Automotive, HDR, LFM, Motion Artifact Free, Sub-pixel, LOFIC,

References

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[2]) Sergey Velichko et al., "140 dB Dynamic Range Sub-electron Noise Floor Image Sensor", IISW 2017
[3]) S. Iida et al., "A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation", IEDM 2018. https://doi.org/10.1109/iedm.2018.8614565
[4]) Y. Sakano et al., "A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance", ISSCC 2020. https://doi.org/10.1109/isscc19947.2020.9063095
[5]) D. Yoo et al., "Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a Single-Exposure Dynamic-Range of 120 dB", IISW 2023. https://doi.org/10.3390/s23229150