WORKSHOP PAPER
A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity
Joo Hyoung Kim1,2, Francois Berghmans1, Abu Bakar Siddik1,2, Irem Sutcu1,2, Isabel Pintor Monroy1, Jehyeok Yu1,3, Tristan Weydts1, Epimitheas Georgitzikis1, Jubin Kang1,4, Yannick Baines1, Yannick Hermans1, Naresh Chandrasekaran1, Florian De Roose1, Griet Uytterhoeven1, Renaud Puybaret1, Yunlong Li1, Itai Lieberman1, Gauri Karve1, David Cheyns1, Jan Genoe1,2, Paweł E. Malinowski1, Paul Heremans1,2, Kris Myny1,2, Nikolas Papadopoulos1, Jiwon Lee1,5
1imec, Kapeldreef 75, 3001 Leuven, Belgium
2KU Leuven, 3001 Leuven, Belgium
3SKKU, 16419 Korea
4UNIST, 44919 Ulsan, Korea
5Hanyang University, 15495 Ansan, Korea

Abstract

This research demonstrates the development of a thin-film based pinned photodiode (TF-PPD) structure that exhibits reduced kTC noise and dark current while achieving high conversion gain (CG). The use of indium-gallium-zinc oxide (IGZO) thin-film transistor and quantum dot photodiode integrated sequentially on Si Read-Out Integrated Circuitry (ROIC) in a fully monolithic manner with the introduction of the photogate (PG) for PPD operation, leads to a photodiode with low noise performance and a high full well capacity (FWC) of up to 1.37 Me- with a 5 μm pixel pitch, which is 8.3 times larger than what the TFPD junction capacitor can store. This substantial FWC, together with inherent low noise characteristics, enables the TF-PPD to achieve a dynamic range (DR) of 100 dB.
Publisher: IISS (Int. Image Sensors Society)
Year: 2023
Workshop: IISW
URL: https://doi.org/10.60928/hihx-afrp
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Keywords

Thin-Film Photodiodes, Pinned Photodiode, Monolithic Fabrication,

References

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