WORKSHOP PAPER
Dark fixed pattern noise generation by Negative-Bias-Temperature (NBT) stress on CMOS imager pixel transfer gate
Hirofumi Yamashita1, Motohiro Maeda1, Shogo Furuya1, Takanori Yagami1
1Toshiba Corporation, 2-5-1, Kasama, Sakae-ku, Yokohama, 247-8585, Japan

Abstract

This paper investigates the generation of dark Fixed-Pattern-Noise (FPN) caused by Negative-Bias-Temperature (NBT) stress on CMOS imager pixel transfer gates. The study reveals that NBT stress can lead to the generation of dark FPN, resembling the Vth shift after NBT stress observed in p-type MOS-FETs. The relationship between dark FPN dependency on stress conditions and the proposed root cause model based on the interaction of accumulated holes with the Si-SiO2 interface is elaborated.
Publisher: IISS (Int. Image Sensors Society)
Year: 2011
Workshop: IISW
URL: https://doi.org/10.60928/hqxp-5hrc
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Keywords

Dark Fixed-Pattern-Noise, Negative-Bias-Temperature stress, CMOS imager pixel,

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