WORKSHOP PAPER
Design of Double micro lens structure for 2.8um Global Shutter Pixel
Toshifumi Yokoyama1, Masakatsu Suzuki1, Yoshiaki Nishi1, Ikuo Mizuno1, Assaf Lahav2
1Towerjazz Panasonic semiconductor Co., Ltd., 800 Higashiyama, Uozu City, Toyama, Japan 937-8585.
2TowerJazz SemiConductors, Migdal Haemeq, Israel.

Abstract

We developed a 2.8um Global shutter pixel. We proposed a new inner lens design concept to realize the both low optical noise and high Quantum Efficiency (QE). New lens based on our concept achieved low optical noise (1 / PLS = 7700) and high QE (62%).
Publisher: IISS (Int. Image Sensors Society)
Year: 2017
Workshop: IISW
URL: https://doi.org/10.60928/hus4-u3zk

Keywords

Global shutter pixel, Quantum Efficiency, Parasitic Light Sensitivity,

References

1) A. Lahav, "Design of photo-electron barrier for the Memory Node of a Global Shutter pixel based on a Pinned Photodiode", Proc. of 2009 International Image Sensor Workshop, Bergen, Norway.
2) A. Lahav, "IR Enhanced Global Shutter Pixel for High Speed Applications", Proc. of 2013 International Image Sensor Workshop, Utah, USA.
3) G. Meynants, "Global Shutter Image Sensors for Machine Vision Applications Global Shutter Image Sensors for Machine", ISE, 2010
4) S. Lauxtermann, "Comparison of Global Shutter Pixels for CMOS Image Sensors", Proc. of 2007 International Image Sensor Workshop, Ogunquit, USA.
5) N. Teranishi, IEEE Trans. Elec. Dev., ED-34, 1052 (1987).
6) A. Toyoda, "A novel tungsten light-shield structure for high-density CCD image sensors", IEEE Trans.Electron Devices, vol. 38, no. 5, pp. 965–968, May 1991., 1991. https://doi.org/10.1109/16.78366
7) T. Yamada, "Improvement of Photo-Sensitivity and Smear Characteristics in 2.8-μm Square Pixel IT-CCD Image Sensor", IEEE Workshop on CCDs and Advanced Image Sensors, 2003., 2003
8) Y. Sano, "Submicron Spaced Lens Array Process Technology for a High Photosensitivity CCD Image Sensor", IEDM Tech. Digest, pp. 283-286 (Dec. 1990)., 1990. https://doi.org/10.1109/iedm.1990.237174