WORKSHOP PAPER
A 250 μm x 12.5 μm rectangular pixel with resistive poly gate for line scan CMOS image sensor
Abstract
This paper presents a 250 μm × 12.5 μm rectangular pixel using the resistive poly gate. This pixel enables a linear potential gradient along the gate, which modulates the buried channel beneath it, thus, establishing a continuous drift field spanning the photodiode’s entire length. During integration, photogenerated charges first move into the buried channel and then transfer along the buried channel via the resistive gate induced drift field. Charge transfer time measurement demonstrates that the proposed pixel structure achieves sub-3 μs charge transfer performance, validating its capability to meet the requirements in high-speed, long-pitch sensor applications of line-scan imaging.Keywords
Rectangular pixel, Resistive poly gate, Line scan, CMOS image sensor,References
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