WORKSHOP PAPER
Small Diameter SAG-based InGaAs/InP SPAD for 1550 nm photon counting
Ekin Kizilkan1, H. K. Yildirim1, Utku Karaca1, Claudio Bruschini1, Omid Salehzadeh2, Anthony J. SpringThorpe2, Alexandre W. Walker2, Costel Flueraru2, Oliver Pitts2, Edoardo Charbon1
1EPFL, Neuchatel, Switzerland
2NRC, Ottawa, Canada

Abstract

In this work, we present an InGaAs/InP-based single-photon avalanche diode (SPAD) that has a 6 µm Zn diffusion diameter. However, the device can detect photons on a circular area with a ∼21 µm diameter, even though the Zn diffusion diameter is 6 µm. We investigated potential causes of this effect together with response areas of larger diameter SPADs of the same kind. The uniform efficiency response of the 6 µm diameter device makes it a good candidate for an array implementation with a 25 µm pixel pitch.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/i6yp-kdn3

Keywords

SPAD, InGaAs, InP, III/V, photon-counting, SWIR,

References

[1]) Hadfield, Robert H., "Single-photon detectors for optical quantum information applications", Nature Photonics, 2009. https://doi.org/10.1038/nphoton.2009.230
[2]) Itzler, Mark A., et al., "SWIR Geiger-mode APD detectors and cameras for 3D imaging.", Advanced Photon Counting Techniques VIII, 2014. https://doi.org/10.1117/12.2050798
[3]) Kizilkan, Ekin, et al., "Guard-ring-free InGaAs/InP single-photon avalanche diode based on a novel one-step Zn-diffusion technique", IEEE Journal of Selected Topics in Quantum Electronics, 2022. https://doi.org/10.1109/jstqe.2022.3162527
[4]) Calandri, Niccol`o, et al., "Charge persistence in InGaAs/InP single-photon avalanche diodes", IEEE Journal of Quantum Electronics, 2016. https://doi.org/10.1109/jqe.2016.2526608
[5]) Telesca, Fabio, Fabio Signorelli, and Alberto Tosi, "Double zinc diffusion optimization for charge persistence reduction in InGaAs/InP SPADs", IEEE Journal of Selected Topics in Quantum Electronics, 2023. https://doi.org/10.1109/jstqe.2023.3332767